JPS63103453A - Optical information recording member - Google Patents

Abstract

PURPOSE:To prevent the deterioration of heat resistant protective layers and to improve the sensitivity in recording and erasing by forming the heat resistant protective layers of a mixture composed of plural compds. and using the compds. which do not solutionize each other for two kinds among the constituting compds. of the mixture. CONSTITUTION:The heat resistant protective layers 2, 4 consisting of the plural compds. are provided between an optically active layer 3 and a base material 1 or on the optically active layer 3. At least two kinds among the constituting compds. of the mixture are selected from the compds. which do not solutionize each other. More specifically, the state as if the compds. are forcibly dispersed and solutionized is obtd. and the thermal properties of the heat resistant layers are changed by using at least two kinds of the materials which do not solutionize each other as the heat resistant protective layer 2. The recording sensitivity of optical type information recording and the reliability with respect to the repetition of the recording and erasure are thereby improved.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an optical information recording member for recording, reproducing, and erasing information at high speed and high density using optical means.

Conventional technology Non-destructive optical information recording members that can be erased and repeatedly recorded and reproduced, such as plastics used as a base material in optical disk memories), To・
It has been proposed to provide a heat-resistant protective film such as an oxide between the substrate and the optically active layer or directly on the optically active layer. The material used as the heat-resistant protective layer is oxide (Si0
2. GeO2, Al2O3, BeO2), nitrides (
B.N.

Si3N4. AIN), carbides (SiC), chalcogenides (ZnS, ZnSe), etc. have been proposed.

The main characteristics required for a heat-resistant protective layer are (1) transparency in the wavelength range used, (2) melting point higher than the operating temperature, (3) high mechanical strength, (4) ) be chemically stable, (5) have appropriate thermal constants (thermal conductivity, specific heat), etc.

To explain these, it goes without saying that (1) is necessary for efficiently absorbing laser energy into the optically active layer, and (2) is necessary for the heat-resistant layer to change before the temperature at which the optically active layer thermally transforms. This is because it would be inconvenient if it were to be exposed to moisture, (3) is a problem especially if it cracks during the heating and cooling process, and (4) is a problem if it hydrolyzes or deliquesces due to moisture. Finally, (5) is one of the optical information recording methods, in the case of phase change type, by combining heating and rapid cooling or slow cooling to reversibly reciprocate between two phases. Since recording and erasing is achieved, unless the thermal constant is appropriate, the laser energy will not be used efficiently.

Therefore, the sensitivity to the irradiated laser power during recording and erasing is insufficient. In other words, a large amount of laser power is required to erase records.

Problems to be Solved by the Invention Although the above-mentioned materials almost satisfy these conditions, they still cannot be said to completely satisfy the requirements for optical information recording applications. Especially in the case of rewritable optical memory,
If the heat-resistant protective layer changes in quality due to repeated laser irradiation heating and cooling, sufficient reliability over repeated recording and erasing cannot be obtained.

The present invention aims to prevent deterioration of the M thermal protective layer and improve recording and erasing sensitivity, which is one of the factors that determines the repeated recording and erasing life of an optical information recording member.

Means for Solving the Problems The heat-resistant protective layer is made of a mixture of a plurality of compounds, and at least two of the constituent compounds of the mixture are not dissolved in solid solution with each other.

Function By using at least two types of substances that do not dissolve into each other as a heat-resistant protective layer, a state as if they were forcibly dispersed and dissolved in each other can be obtained, changing the thermal properties of the heat-resistant layer and improving optical properties. Improving the recording sensitivity of formula information recording and recording,
Reliability regarding repeated erasing can be improved.

EXAMPLES Hereinafter, examples of the present invention will be described based on the accompanying drawings. FIG. 1 is a schematic cross-sectional view of an optical information recording member that is the basis of the present invention, in which 1 is a base material, 2 and 4 are heat-resistant protective layers, 3 is an optically active layer, and 6 is a protective base material. are pasted together using the adhesive shown in step 5. The present invention is characterized in that the heat-resistant protective layers 2 and 4 are made of specific materials. That is, conventional materials such as germanium dioxide (GeO2
), silicon dioxide (5i02), aene sulfide (zns
), the mechanical strength and thermal properties were insufficient.

When irradiated with a laser, if the mechanical strength at high temperatures is weak, the heat-resistant protective layer will be thermally deformed and cracked, or if there are many structural defects, the protective layer itself will shrink due to heating and become permanently deformed. In addition, in order to efficiently utilize the thermal energy of the laser, it is necessary to have appropriate thermal conductivity and specific heat. If the thermal conductivity is too large, extra energy is required, which is disadvantageous, and if it is too small, it becomes impossible to obtain rapid cooling conditions. The variable type is important because it realizes recording and erasing by reversibly reciprocating between two layers by combining heating and rapid cooling or slow cooling.

The features of the present invention are to improve the recording and erasing characteristics by controlling the thermal constants while minimizing the mechanical properties at high temperatures, especially significant thermal deformation, and to improve the reliability of repeated recording and erasing. This is an improvement. As an actual design condition for the protective layer, it is desirable that the protection layer has good optical absorption efficiency for laser energy. For this purpose, it is necessary that the incident laser light satisfy the non-reflection condition. Since the refractive index of an optically active layer containing Te as a main component is approximately 4, in order to obtain a non-reflection condition, the refractive index of the heat-resistant protective layer must be 4 or less, and according to calculations, the most efficient value is 2 or more and 3 or less. I know it's good. The non-reflection condition is approximately expressed as follows, where N is the refractive index of the protective layer, d is the wavelength of the laser, and d is the thickness of the protective layer.

d=L/4N A typical material that satisfies this condition is aene sulfide (ZnS: N = 2.3).

However, as mentioned above, although ZnS has excellent initial characteristics, it has been found through experiments that its repeated recording and erasing characteristics are not necessarily satisfactory.
The inventors attempted to make improvements.

The resulting material was a mixture of aene sulfide and silicon dioxide. Further experiments revealed that the particles that make up the thin film were uniformly atomized by rapid cooling from the gas phase, such as in vapor deposition, and were mixed together to force the two materials to form a solid solution. We have discovered a group of materials that exhibit novel properties as if they were formed as a solid solution.

The characteristics of the components of this material group are that they do not form a solid solution with each other, but the combination of materials is a combination of crystalline materials and glassy materials.

Examples of crystalline materials include chalcogenides of ZnS, ZnSe, and other chalcogenides such as sulfide, and examples of glassy materials or materials that promote vitrification include silicon dioxide. , oxide glass such as germanium dioxide, or non-oxide glass such as silicon nitride or silicon carbide.

It is not known why the properties improve when glass and chalcogenide are mixed. Perhaps, by mixing glassy materials, the growth of crystal grains of crystalline materials is suppressed and become finer, or the laser energy input is made more efficient by becoming amorphous and reducing heat conduction. This is thought to be because it contributes well to the temperature rise of the optically active layer. When laser power is efficiently absorbed by the optically active layer, less irradiation power is required.
Furthermore, since the temperature around the optically active layer does not rise during recording and erasing, thermal damage to the active layer and the heat-resistant protective layer is also reduced accordingly. As a result, the number of times of recording and erasing increases, improving reliability. Therefore, it is essential to reduce the laser power required for recording and erasing in order to increase the number of repetitions of recording and erasing.

Although not specified in the following examples, it has been confirmed that when a heat-resistant protective layer with improved recording and erasing sensitivity is used, the number of static recording and erasing cycles is at least 10 to the 6th power or more. .

Chalcogen compounds generally have a large refractive index (N>2
), but oxide glasses are often at most 2, so forcefully mixing glassy materials with chalcogenides may not be good in terms of properties. As can be seen, the properties can be dramatically improved by mixing an appropriate amount. Specific examples by the present inventors are shown below.

Example 1 A heat-resistant protective layer made of a mixture of aene sulfide and silicon dioxide was created on a base material made of polymethyl methacrylate (P to fMA) by a binary vapor deposition method. The outline of the vapor deposition equipment is shown in the second section.
As shown in the figure. The ultimate degree of vacuum is on the order of 10 to the minus 6th power. A vacuum container 7 is evacuated to vacuum through an exhaust hole 12. 8 is a base material, 9 is a rotation axis for rotating the base material,
The deposition material is evaporated from evaporation sources 10 and 11. The mixing ratio of ZnS and silicon dioxide was determined by controlling the amount of evaporation of each material, and quantitative chemical analysis was also performed. The component of the optically active layer is Te, which is a type of phase change material that can erase records by reversibly reciprocating between a crystalline state and an amorphous state.
A Ge5nO-based material is used, and the film thickness is 100 nm. The heat-resistant protective layer is approximately 100 nm thick on the substrate side and on the top side of the optically active layer.

200 nm. This film thickness configuration was determined from the viewpoint of laser absorption efficiency and from the viewpoint of increasing the change in optical constants.

Figure 3 shows the refractive index of 5iO of the heat-resistant protective film itself obtained.
2 shows dependence on mixing amount X. It has been shown that as 5i02 is added to ZnS, the refractive index decreases almost linearly. This indirectly indicates that ZnS and 5i02 are not combined and mixed, but simply mixed. The same can be said of changes in the refractive index of other material combinations shown in the following examples.

Next, Table 1 shows the minimum laser energy required for crystallization (erasing) and amorphization (recording) for the amount of 5iO8 added.This measurement was performed dynamically while rotating the disk formed on the disk. The circumferential speed of the disk is approximately 5 m/s. The wavelength of the laser is 83
At 0 nm, the beam is focused to the diffraction limit on the disk. It is preferable that the power of the laser be as low as possible, since this reduces the burden on the user. By adding 5iO7 to ZnS, the minimum energy required for crystallization and amorphization decreases, and begins to increase again as the amount added is further increased. As is clear from this result, 5i02
It can be seen that there is an optimum value for the amount of addition.

In this example, the amount of 5i02 is 10 mol% or more.
It can be seen that when 5i02 is below 0 mol %, the laser power required for crystallization is 5 mW to 7.5 mW, which is lower than 9 mW when 5i02 is not present. Further, at this mixing ratio, the refractive index is approximately 2 or more, and optically the above-mentioned conditions are satisfied.

As shown above, when SiO□ is added to ZnS, there is an effect shown by the decrease in laser power required for crystallization.

(Margin below) Table 1 Effect of adding 5102 to ZnS Figure 4 shows the change in reflectance when recording and erasing is repeatedly performed statically using a laser. Among the respective curves in FIG. 4, the upper side corresponds to the reflectance in the crystalline state, that is, the erasing state, and the lower side corresponds to the amorphous state, that is, the recording state. This means that the difference in reflectance is proportional to the intensity of the recorded signal. 5i0
It can be seen that the number of repetitions changes depending on the amount of 2 added. Furthermore, the laser power was determined to simulate the thermal load on the disk.

The projection of the power distribution of the laser used for recording onto the disk is adjusted so that it is approximately circularly symmetrical, and the distribution for erasing is adjusted so that it is elliptical.

In this case as well, the best results were obtained when 20 mol % of 5i02 was added, and it was possible to repeat the process more than 10 times.

In this example, the characteristics were obtained by forcibly dispersing and mixing 5i02 and ZnS using a means of rapid cooling from the gas phase, such as vapor deposition, but the conditions for slow cooling even from the same gas phase, such as the deposition rate In cases where the rate of dispersion is extremely slow, dispersion is hindered and phase separation progresses, making it difficult not only to improve sensitivity but also to increase the number of times recording and erasing can be repeated. The same can be said for any combination of materials in any of the embodiments described.

Example 2 A heat-resistant protective layer made of a mixture of aene selenide and silicon dioxide was prepared on a base material made of polymethyl methacrylate by a binary vapor deposition method. The ultimate vacuum degree is on the order of 10-6. The mixing ratio of aene selenide (ZnSe) and silicon dioxide was determined by controlling the amount of evaporation of each material as in Example 1, and quantitative chemical analysis was also performed. The components of the optically active layer are also the same as in Example 1, TeGe5.
An nO-based material is used, and the film thickness is 100 nm. The heat-resistant protective layer is approximately 100 nm thick on the substrate side and on the top side of the optically active layer.

200 nm was created.

FIG. 5 shows the dependence of the refractive index of the obtained heat-resistant protective film itself on the 5i02 mixture ff1x. It is shown that as 5i02 is added to ZnSe, the refractive index decreases almost linearly.

Next, Table 2 shows the minimum laser energy required for crystallization and amorphization with respect to the amount of SiO□ added.The measurement method is the same as in Example 1.

(Margins below) Table 2 Effect of adding 5102 to ZnSe As in Example 1, adding 5102 to ZnSe reduces the laser energy required for crystallization and amorphization, and when the amount added further increases, the laser energy required for crystallization and amorphization decreases. begins to increase. As is clear from this result, there is an optimum value for the amount of SiO□ added.

In this example, the amount of 5i02 is 15 mol% or more.
It can be seen that when 5 mol % or less, the laser power required for crystallization is 6 mW to 7.5 mW, which is lower than 9 mW when 5i02 is not present.

As shown above, when S+02 is added to ZnSe, there is an effect shown by a decrease in the laser power required for crystallization and amorphization.

Further, when the composition is the same, static repetition of recording and erasing can be repeated 106 times or more as in Example 1.

Example 3 Chalcogenated aene, that is, aene sulfide (ZnS
) or ene selenide (ZnSe) or ene telluride (ZnTe) and vitrified germanium dioxide (GeO2), tin oxide (5N02), indium oxide (In2O3), tellurium dioxide (TeO2), A heat-resistant protective layer made of the mixture was prepared.

The mixing ratio of chalcogenated enene (ZnX: Xi chalcogen) and vitrified oxide was determined by controlling the evaporation amount of each material as in Example 1, and quantitative chemical analysis was also performed. The same TeGe5nO components as in Example 1 were used for the optically active layer, and the film thickness was 100 mm.
It is nm. The heat-resistant protective layer has a thickness of approximately 100 nm and 200 nm on the substrate side and the upper side of the optically active layer, respectively.
Created.

Next, Table 3 shows the minimum laser energy required for crystallization and amorphization with respect to the amount of oxide added. The measurement method is the same as in Example 1.

By adding a glassy oxide to the chalcogenated aene, the minimum energy required for crystallization decreases, and begins to increase again as the amount added is further increased. As is clear from this result, there is an optimum value for the amount of vitrification oxide added.

In this example, the addition amount of SnO3 is 15
It can be seen that when the mol% is greater than or equal to 35 mol%, the laser power required for crystallization is 611 IW to 7 mW, which is lower than 9 mW when there is no oxide glass.

It can also be seen that the laser power required for amorphization is also reduced.

Almost similar results were obtained with the other two chalcogenated enenes and oxides.

Table 3 Effect of adding GeO2 to ZnS Example 4 Aene sulfide and silicon nitride (Si3N4) as a glass sample were deposited on a base material made of polymethyl methacrylate using a binary vapor deposition method.
A heat-resistant protective layer was prepared from a mixture of The mixing ratio of aene sulfide and vitrified nitride was determined by controlling the evaporation amount of each material as in Example 1,
Quantitative chemical analysis was also performed. The same TeGe5nO components as in Example 1 were used for the optically active layer, and g! The thickness is 100 nm. The heat-resistant protective layer has a thickness of approximately 100 nm and 20 nm on the substrate side and the upper side of the optically active layer, respectively.
0 nm was created.

Next, Table 4 shows the minimum laser energy required for crystallization and amorphization with respect to the amount of Si3N4 added, and the measurement method is the same as in Example 1.

FIG. 6 shows the dependence of the refractive index of the heat-resistant protective film itself on the mixture ratio. It has been shown that the refractive index decreases almost linearly as Si3N4 is added to ZnSe.

In this example as well, it was confirmed that adding nitride glass to aene sulfide reduced the minimum energy required for crystallization and amorphization. As is clear from this result, there is an optimum value for the amount of vitrification oxide added.

In this example as well, it was confirmed that the effective amount of Si3N4 added to the aene sulfide was approximately 20 mol%.

Example 5 Aene selenide and silicon carbide (SiC) as a glass sample were deposited on a base material made of polymethyl methacrylate using a binary vapor deposition method.
A heat-resistant protective layer made of a mixture of and was prepared by sputtering. Fig. 7 shows an outline of the sputtering apparatus, and Fig. 8 shows the structure of the cathode target.The sputtering apparatus was a normal commercially available one, but the cathode target used was of a composite type. That is, a sintered pellet of SiC was placed on a sintered body of ZnSe in an amount corresponding to the amount added, and sputtering was performed. Quantitative chemical analysis was also performed. The same TeGe5nO components as in Example 1 were used for the optically active layer, and the film thickness was 100 nm.
It is m. Heat-resistant protective layers were formed on the base material side and the upper side of the optically active layer to a thickness of approximately 100 nm and 200 nm, respectively.

In this example as well, it was confirmed that adding nitride glass to aene sulfide reduced the laser energy required for crystallization and amorphization.

In this example as well, it was confirmed that the effective amount of silicon carbide added to aene sulfide was approximately 20 mol%.

Example 6 A heat-resistant protective layer made of a mixture of aene sulfide, silicon dioxide, and germanium dioxide was prepared on a base material made of polymethyl methacrylate by a three-component vapor deposition method. The effect was measured by changing the ratio of silicon dioxide and germanium dioxide while keeping the amount of aene sulfide constant (15, 20, 50 mol %). The mixing ratio was determined by controlling the amount of evaporation of each material as in Example 1, and quantitative chemical analysis was also performed. The same TeGe5nO components as in Example 1 were used for the optically active layer, and the film thickness was 100 nm.
A heat-resistant protective layer having a thickness of approximately 100 nm and 200 nm was formed on the base material side and the upper side of the optically active layer, respectively.

FIG. 9 shows the dependence of the refractive index of the heat-resistant protective film itself on the mixture ratio. It has been shown that the refractive index decreases almost linearly as a mixture of 5i02 and GeO□ is added to ZnS. The lowest laser energy required for crystallization with respect to the total amount of oxide glass added was the lowest at about 20 mol %, f3 mW, as in the previous example, and the amorphization power was also reduced by 2 mW, indicating that it is effective. Ta. The measurement method is the same as in Example 1.

Example 7 A heat-resistant protective layer made of a mixture of chalcogenated raw material and silicon dioxide was prepared on a base material made of polymethyl methacrylate by a binary vapor deposition method. The ultimate degree of vacuum is on the order of 10 to the minus 6th power. Chalcogenated Namari (PbS)
, Pb5e, PbTe) and silicon dioxide was determined by controlling the evaporation amount of each material as in Example 1, and quantitative chemical analysis was also performed. The same TeGe5nO components as in Example 1 were used for the optically active layer, and the film thickness was 100 nm. The heat-resistant protective layer is provided on the base material side and on the top side of the optically active layer, each having a thickness of approximately 1.
00 nm and 200 nm.

FIG. 10 shows that the refractive index of the obtained heat-resistant protective film itself depends on the mixing ratio, and it is shown that as 5i02 is added to the chalcogenated raw material, the refractive index decreases almost monotonically.

Next, Table 2 shows the minimum laser energy 5i02 required for crystallization for each chalcogenide name.
Shows dependence on added amount. The measuring method was the same as in Example 1.

As in Example 1, although the minimum energy required for crystallization and amorphization is reduced by adding chalcogenated Namali S+02, the effect of chalcogenated Aene is not as large. From this result, 5i02
Although it can be seen that there is an optimum value for the amount of addition of , the effect is smaller than that of chalcogenated aene. This is thought to be due to the fact that chalcogenide has a slight absorption at the wavelength of the semiconductor laser.

Example 8 A heat-resistant protective layer made of a mixture of aene selenide and silicon dioxide was prepared on a base material made of polycarbonate by a binary vapor deposition method. The ultimate degree of vacuum is on the order of 10 to the minus 6th power. Aene sulfide (ZnS) and silicon dioxide (S
The mixing ratio of i20) was determined by controlling the evaporation amount of each material as in Example 1, and quantitative chemical analysis was also performed. The components of the optically active layer were different in this example and were made of TbFeCo, a material exhibiting a magneto-optical effect. The film thickness is 50 nm.

Heat-resistant protective layers were formed to a thickness of approximately 100 nm and 200 nm on the base material side and above the magneto-optical active layer, respectively. The obtained heat-resistant protective film was similar to that used in Example 2. Next, Table 5 shows the oxidation resistance characteristics depending on the amount of 5i02 added.
Under environmental conditions, a decrease in reflectance can be seen within a few days, but 5
By adding i02t'', no optical change was observed after 30 days.

Table 5 Addition amount of 5102 and oxidizing properties As shown in the above examples, it can be said that the present invention is effective in improving the characteristics of optical information recording members. In particular, it has great effects in efficiently utilizing incident laser power, increasing the number of recording and erasing operations, and improving reliability in protecting the optically active layer from oxidation. In the above example, a crystalline material such as aene sulfide and a glassy material such as silicon dioxide were rapidly cooled from a gas phase, so that the particles constituting the thin film were made fine and forced into a solid solution. Although we have shown an example of a similar structure, this idea is unprecedented.

As mentioned above, since the present invention is characterized by the structure of the material, the light applicable to the embodiments was limited to optical disks.
In addition to optical disks, application to heat-resistant insulating films such as mBH magnetic heads and heads for thermal printers, which can exhibit thermal properties and effects as a passivation film, is also considered.

Effects of the Invention According to the present invention, in an optical information recording member comprising an optically active layer provided on a base material, between the optically active layer and the base material,
Alternatively, a heat-resistant protective layer made of a plurality of compounds is provided on the optically active layer, and at least two of the constituent compounds of the mixture are selected from those that do not form a solid solution with each other. It is possible to increase the sensitivity to power or increase the number of repetitions of recording and erasing.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of an optical information recording medium according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of a binary vapor deposition apparatus, FIG. 3 is a graph showing the refractive index of ZnS+5IO2 system, and FIG. 4 is a graph showing the refractive index of ZnS+5IO2 system. Z
A graph showing the repetition characteristics of the nS+5I02 system, Fig. 5 a graph showing the refractive index of the ZnSe+5IO2 system, Fig. 6 a graph showing the refractive index of the ZnS+5I02 system, Fig. 7 a cross-sectional view of the sputtering device, and Fig. 8 a graph showing the refractive index of the ZnSe+5I02 system. A plan view showing the cathode target configuration, FIG.
2) It is a graph showing the refractive index of the system. DESCRIPTION OF SYMBOLS 1... Base material, 2.4... Heat-resistant protective layer, 3... Optical active layer, 5... Adhesive layer, 6... Protective base material. Name of agent Patent attorney Toshio Nakao Number 1 Figure 2/Z Figure 3 02θ 4060 % lθ0 χ: 5LO2 Laneka Ojhi (Mole h) Figure 4 Ztstsi, Oz Nail blindness I can do it, do it, do it, and see it: times 4 ≦ See Figure 5 a 20 4J 60
θ0 1002: 5iOz ”t
Q Force (%r%) Figure 6 o 20 40 60 80 100x-: Si3
N4 2 formula Qi C mole”) Figure 7 Rotating shaft

Claims (1)

[Scope of Claims] (1) A base material, an optically active layer provided on the base material, and a heat-resistant protective layer provided between the optically active layer and the base material or on the optically active layer. An optical information recording member, wherein the heat-resistant protective layer is made of a mixture of a plurality of compounds, and at least two of the constituent compounds of the mixture do not form a solid solution with each other. (2) The optical information recording member according to claim 1, wherein at least one of the compounds constituting the heat-resistant protective layer is glass or one that promotes vitrification. (3) Among the compounds constituting the heat-resistant protective layer,
2. The optical information recording member according to claim 1, wherein at least one kind is a metal chalcogenide and at least one kind is an oxide. (4) Optical information recording according to claim 3, characterized in that at least one of the metal chalcogenides is a chalcogenated aene, and at least one of the oxides is a vitrified oxide. Element. (5) Chalcogenated enenes are ZnS, ZnSe and Z
At least one kind selected from nTe, and the vitrified oxide is SiO_2, GeO_2, SnO_2, I
The optical information recording member according to claim 4, characterized in that it is at least one selected from n_2O_3 and TeO_2. (6) The optical information recording member according to claim 3, wherein at least one of the metal chalcogenides is a metal chalcogenide, and at least one of the metal chalcogenides is a vitrified oxide. (7) The chalcogenated metal is at least one selected from PbS, PbS and PbTe, and the vitrified oxide is SiO_2, GeO_2, SnO_2
, In_2O_3 and TeO_2.
The optical information recording member described in Section 2. (8) The optical information recording member according to claim 1, wherein at least one of the compounds constituting the heat-resistant protective layer is a metal chalcogenide and at least one is a nitride. (9) Optical information recording according to claim 8, characterized in that at least one of the metal chalcogenides is an aene chalcogenide, and at least one of the nitrides is a vitrified nitride. Element. (10) Chalcogenated aenes are ZnS, ZnSe and Z
10. The optical information recording member according to claim 9, wherein the vitrified nitride is at least one selected from nTe and is Si_3N_4. (11) The optical information recording member according to claim 1, wherein at least one of the compounds constituting the heat-resistant protective layer is a metal chalcogenide and at least one is a carbide. (12) Claim 1, characterized in that at least one of the metal chalcogenides is a chalcogenated aene, and at least one of the metal chalcogenides is a vitrified carbide.
The optical information recording member according to item 1. (13) Chalcogenated aenes are ZnS, ZnSe and Z
13. The optical information recording member according to claim 12, wherein the vitrified carbide is at least one selected from nTe and is SiC. (14) The optical information recording member according to claim 1, wherein at least one of the compounds constituting the heat-resistant protective layer is a metal chalcogenide and at least one is a nitride oxide. .