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JPS62272561A - １トランジスタ型メモリセル - Google Patents

１トランジスタ型メモリセル

Info

Publication number
JPS62272561A
JPS62272561A JP61115621A JP11562186A JPS62272561A JP S62272561 A JPS62272561 A JP S62272561A JP 61115621 A JP61115621 A JP 61115621A JP 11562186 A JP11562186 A JP 11562186A JP S62272561 A JPS62272561 A JP S62272561A
Authority
JP
Japan
Prior art keywords
type
polysilicon
memory cell
transistor
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61115621A
Other languages
English (en)
Inventor
Keitaro Fujimori
啓太郎 藤森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP61115621A priority Critical patent/JPS62272561A/ja
Publication of JPS62272561A publication Critical patent/JPS62272561A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Semiconductor Memories (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ３発明の詳細な説明 〔産業上の利用分野〕 本発明は半導体メモリの素子構造に関する。
〔従来の技術〕
従来の大規模半導体メモリの素子構造は、特に１トラン
ジスタ型メモリ七ルに限れば、積み上げ各社ＦＪＩ　（
Ｍ　、　Ｋｏｙａｎａｇｉ　ｅｔ　ａｌ：工ＥＩｎｌＥ
ｉ　、工ＥＤＭ　　３４８１１９７Ｂ）、あるいは、溝
の側壁を容量とするタイプ（Ｈ、！３ｕｎａｍｉ　ｅｔ
　ａｌ：工Ｅｚｘ、工１１）Ｍ　　８０６，１９８２）
の２つの流れがありた。現在発表されている素子構造と
しては、１セルの面積が９μｍ２程度となっており、４
〜１６Ｍｂｉｔ　　ＤＲＡＭへの適用が考えられている
。（Ｎ　、　？　、　Ｒｌｃｈａｒｄｓｏｎ　、　ｅｔ
　ａｌ：工Ｅｌ見、工ＩＣＩ）Ｍ　　７１４，１９８５
）〔発明が解決しようとする問題点〕 しかし、半導体メモリの大容鼠化の要求は強く前述の従
来技術では、１６Ｍｂｉｔまでが限界と考えられる。そ
こで、本発明はこのような問題点を解決するもので、そ
の目的とするところは、６４Ｍｂｉｔ程度のＤ　ＲＡＭ
を実現するための１トランジスタ型メモリセルの構造を
提供するところにある。
〔問題点を解決するための手段］ 本発明の１トランジスタ型メモリセルの構造はＰ＋基板
中に薄い絶縁膜を介して埋めこまれたｎ＋ポリシリコン
によるトレンチ型コンデンサと、その上部をそのままソ
ースミ電極とする縦型のＳＯＩ溝構造５チャネルＭＩＳ
トランジスタを用いることを特徴とし、ｎチャネルトラ
ンジスタのゲート電極がＲＩＥ等の異方性エツチングに
より、セル７アライメントで形成されることを特徴とす
る。
〔実施例〕
第１図は本発明の実施例における１トランジスタ型メモ
リセルのレイアウト図であって、１はワード線、２はビ
ット線である。ワード線、ビット線の材質は、アルミニ
ウム、シリサイド、ポリサイド、ポリシリコン等、種々
のものが考えられるが、実施例では、アルミニウムの２
Ｎ配線を用いている。３はワード線に接続されているメ
モリセルのゲー）Ｘ極であり、４はデータを保持するコ
ンデンサである。５は、ビット線とメモリセルのトラン
ジスタとのコンタクト・ホールである。第１図に於いて
、Ｘ、Ｙで示されている部分が、１１）ｉｔ分の占有す
る面積である。
第２図は第１図に於いて、直線ＡＢで切断した状態の断
面模式図である。２１はＰ　の単結晶シリコン基板で、
２２はＰ＋の単結晶又は多結晶のシリコン、２３は舊−
の単結晶又は多結晶シリコン、２４はＰ＋の多結晶シリ
コンである。２５は薄い絶縁膜で、２１，２５．２４で
データ保持用のコンデンサを形成する。２６はゲート絶
縁膜、２７はゲート電極であり、２９のワード線からの
信号によって、２３の領域中に？Ｓ型のチャネルを形成
する。２８はフィールド絶縁膜、３０はＮ開繊縁膜τ゛
あり、３１はビット線である。本発明のメモリセルは、
基本的には、トレンチ型のデータ保持コンデンサ上に縦
型ＭＯ３）ランジスタを積層したものであるが、縦型Ｍ
ＯＳ）ランジスタはＳＯＩ溝構造あること、ゲート電極
をセルフアライメントにより形成することにも特徴があ
る。以下、製造プロセスに従って説明する。
第３図は本発明のメモリセルの製造工程の概略図である
。（α）は、Ｐ＋シリコン基板２１を用いて、ＲＩＥ等
により、トレンチ構造を作成し、熱酸化膜あるいは熱窒
化膜を側壁に成長させる２５゜次にｎ＋ポリシリコン２
４．Ｐ−ポリシリコン２３．ｎ　ポリシリコン２２とデ
ポジションした時の断１ｆｌｉ図である。（ｂ）は、ポ
リシリコンをアライメント工程の後、エツチングし、フ
ィールド酸化膜 グした時の断面図である。さらに、レーザーアニール等
により、トランジスタ部の結晶性を向上させる。フィー
ルド酸化膜２８の代りにＣｖＤ酸化膜等を用いることが
できるのは言うまでもない。
（Ｃ）では、ゲートｒｋ化膜形成後ゲート電極′２．ｚ
をＣＶＤあるいはスパッタリング等によって作成した後
、ＲＩＥ等で斜め方向にエツチングした時の模式図であ
る。（ｄ）は、２９のワード線を形成した後、層間絶縁
膜３０を形成した時の図である。最後にコンタクト・ホ
ールをあけ、ビット線を形成し、第２図となる。
以上は、メモリセル部分のみの製造工程例であり、実際
のメモリとしては、さらに多くの工程が入ってくること
、あるいは、工程の順序にある程度の自由度があること
は当然である。
〔発明の効果〕
以上述べたように、本発明によれば、トレンチ構造のデ
ータ保持コンデンサ上に縦型のＭＯＳ）ランジスタを積
層することにより、従来９（μＲ）までしか微細化でき
なかったメモリセルを同一のデザイン・ルールで１／３
以下にすることが可能である。また、各部の寸法等を最
適化すれば、６４ＭｂｉｔＤＲＡＭも作成可能である。
【図面の簡単な説明】 第１図は本発明のメモリセルのレイアウト図。 ｆ４２図は本発明のメモリセルの断面模式図。 第３図（α・）〜（ｄ）は本発明のメモリセルの製造工
程の概略図。 以　　上 出願人　セイコーエプソン株式会社 代理人　弁理士最上筋（他１名） ＜４　　）　　　　　　　（Ｊｓ 第３図

Claims (2)

    【特許請求の範囲】
  1. （１）Ｐ＾＋基板中に薄い絶縁膜を介して埋めこまれた
    ｎ＾＋ポリシリコンによるトレンチ型コンデンサと、そ
    のｎ＾＋ポリシリコンの上部をそのまま、ソース電極と
    する、縦型のＳＯＩ構造のｎチャネルＭＩＳトランジス
    タを用いることを特徴とする１トランジスタ型メモリセ
    ル。
  2. （２）ｎチャネルＭＩＳトランジスタのゲート電極がＲ
    ＩＥ等の異方性エッチングにより、セルフアライメント
    で形成されることを特徴とする、特許請求の範囲第１項
    記載の１トランジスタ型メモリセル。
JP61115621A 1986-05-20 1986-05-20 １トランジスタ型メモリセル Pending JPS62272561A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61115621A JPS62272561A (ja) 1986-05-20 1986-05-20 １トランジスタ型メモリセル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61115621A JPS62272561A (ja) 1986-05-20 1986-05-20 １トランジスタ型メモリセル

Publications (1)

Publication Number Publication Date
JPS62272561A true JPS62272561A (ja) 1987-11-26

Family

ID=14667186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61115621A Pending JPS62272561A (ja) 1986-05-20 1986-05-20 １トランジスタ型メモリセル

Country Status (1)

Country Link
JP (1) JPS62272561A (ja)

Cited By (56)

* Cited by examiner, † Cited by third party
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US5181089A (en) * 1989-08-15 1993-01-19 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and a method for producing the same
US5550396A (en) * 1992-01-24 1996-08-27 Mitsubishi Denki Kabushiki Kaisha Vertical field effect transistor with a trench structure
US6873539B1 (en) 2001-06-18 2005-03-29 Pierre Fazan Semiconductor device
US6912150B2 (en) 2003-05-13 2005-06-28 Lionel Portman Reference current generator, and method of programming, adjusting and/or operating same
US6982918B2 (en) 2002-04-18 2006-01-03 Pierre Fazan Data storage device and refreshing method for use with such device
US7061050B2 (en) 2002-04-18 2006-06-13 Innovative Silicon S.A. Semiconductor device utilizing both fully and partially depleted devices
US7085156B2 (en) 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory device and method of operating same
US7085153B2 (en) 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory cell, array, architecture and device, and method of operating same
US7177175B2 (en) 2003-09-24 2007-02-13 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
US7251164B2 (en) 2004-11-10 2007-07-31 Innovative Silicon S.A. Circuitry for and method of improving statistical distribution of integrated circuits
US7301803B2 (en) 2004-12-22 2007-11-27 Innovative Silicon S.A. Bipolar reading technique for a memory cell having an electrically floating body transistor
US7301838B2 (en) 2004-12-13 2007-11-27 Innovative Silicon S.A. Sense amplifier circuitry and architecture to write data into and/or read from memory cells
US7335934B2 (en) 2003-07-22 2008-02-26 Innovative Silicon S.A. Integrated circuit device, and method of fabricating same
US7355916B2 (en) 2005-09-19 2008-04-08 Innovative Silicon S.A. Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
US7476939B2 (en) 2004-11-04 2009-01-13 Innovative Silicon Isi Sa Memory cell having an electrically floating body transistor and programming technique therefor
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
US7542340B2 (en) 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US7542345B2 (en) 2006-02-16 2009-06-02 Innovative Silicon Isi Sa Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7606098B2 (en) 2006-04-18 2009-10-20 Innovative Silicon Isi Sa Semiconductor memory array architecture with grouped memory cells, and method of controlling same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US8194487B2 (en) 2007-09-17 2012-06-05 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8264041B2 (en) 2007-01-26 2012-09-11 Micron Technology, Inc. Semiconductor device with electrically floating body
US8295078B2 (en) 2006-05-02 2012-10-23 Micron Technology, Inc. Semiconductor memory cell and array using punch-through to program and read same
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8315099B2 (en) 2009-07-27 2012-11-20 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8315083B2 (en) 2008-10-02 2012-11-20 Micron Technology Inc. Techniques for reducing a voltage swing
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8369177B2 (en) 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8411513B2 (en) 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8416636B2 (en) 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8518774B2 (en) 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8547738B2 (en) 2010-03-15 2013-10-01 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8710566B2 (en) 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US8748959B2 (en) 2009-03-31 2014-06-10 Micron Technology, Inc. Semiconductor memory device
US8964479B2 (en) 2010-03-04 2015-02-24 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US9019788B2 (en) 2008-01-24 2015-04-28 Micron Technology, Inc. Techniques for accessing memory cells
US9240496B2 (en) 2009-04-30 2016-01-19 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same

Cited By (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181089A (en) * 1989-08-15 1993-01-19 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and a method for producing the same
US5550396A (en) * 1992-01-24 1996-08-27 Mitsubishi Denki Kabushiki Kaisha Vertical field effect transistor with a trench structure
US7239549B2 (en) 2001-06-18 2007-07-03 Innovative Silicon S.A. Semiconductor device
US6873539B1 (en) 2001-06-18 2005-03-29 Pierre Fazan Semiconductor device
US6925006B2 (en) 2001-06-18 2005-08-02 Innovative Silicon S.A. Semiconductor device
US6930918B2 (en) 2001-06-18 2005-08-16 Innovative Silicon S.A. Semiconductor device
US6934186B2 (en) 2001-06-18 2005-08-23 Innovative Silicon S.A. Semiconductor device
US6937516B2 (en) 2001-06-18 2005-08-30 Innovative Silicon S.A. Semiconductor device
US6969662B2 (en) 2001-06-18 2005-11-29 Pierre Fazan Semiconductor device
US7280399B2 (en) 2001-06-18 2007-10-09 Innovative Silicon S.A. Semiconductor device
US7541616B2 (en) 2001-06-18 2009-06-02 Innovative Silicon Isi Sa Semiconductor device
US7514748B2 (en) 2002-04-18 2009-04-07 Innovative Silicon Isi Sa Semiconductor device
US7342842B2 (en) 2002-04-18 2008-03-11 Innovative Silicon, S.A. Data storage device and refreshing method for use with such device
US7061050B2 (en) 2002-04-18 2006-06-13 Innovative Silicon S.A. Semiconductor device utilizing both fully and partially depleted devices
US6982918B2 (en) 2002-04-18 2006-01-03 Pierre Fazan Data storage device and refreshing method for use with such device
US7170807B2 (en) 2002-04-18 2007-01-30 Innovative Silicon S.A. Data storage device and refreshing method for use with such device
US6980461B2 (en) 2003-05-13 2005-12-27 Innovative Silicon S.A. Reference current generator, and method of programming, adjusting and/or operating same
US7187581B2 (en) 2003-05-13 2007-03-06 Innovative Silicon S.A. Semiconductor memory device and method of operating same
US6912150B2 (en) 2003-05-13 2005-06-28 Lionel Portman Reference current generator, and method of programming, adjusting and/or operating same
US7085153B2 (en) 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory cell, array, architecture and device, and method of operating same
US7085156B2 (en) 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory device and method of operating same
US7359229B2 (en) 2003-05-13 2008-04-15 Innovative Silicon S.A. Semiconductor memory device and method of operating same
US7335934B2 (en) 2003-07-22 2008-02-26 Innovative Silicon S.A. Integrated circuit device, and method of fabricating same
US7177175B2 (en) 2003-09-24 2007-02-13 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
US7184298B2 (en) 2003-09-24 2007-02-27 Innovative Silicon S.A. Low power programming technique for a floating body memory transistor, memory cell, and memory array
US7476939B2 (en) 2004-11-04 2009-01-13 Innovative Silicon Isi Sa Memory cell having an electrically floating body transistor and programming technique therefor
US7251164B2 (en) 2004-11-10 2007-07-31 Innovative Silicon S.A. Circuitry for and method of improving statistical distribution of integrated circuits
US7301838B2 (en) 2004-12-13 2007-11-27 Innovative Silicon S.A. Sense amplifier circuitry and architecture to write data into and/or read from memory cells
US7486563B2 (en) 2004-12-13 2009-02-03 Innovative Silicon Isi Sa Sense amplifier circuitry and architecture to write data into and/or read from memory cells
US7301803B2 (en) 2004-12-22 2007-11-27 Innovative Silicon S.A. Bipolar reading technique for a memory cell having an electrically floating body transistor
US7477540B2 (en) 2004-12-22 2009-01-13 Innovative Silicon Isi Sa Bipolar reading technique for a memory cell having an electrically floating body transistor
US8873283B2 (en) 2005-09-07 2014-10-28 Micron Technology, Inc. Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
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US7499358B2 (en) 2005-09-19 2009-03-03 Innovative Silicon Isi Sa Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
US7355916B2 (en) 2005-09-19 2008-04-08 Innovative Silicon S.A. Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
US7542345B2 (en) 2006-02-16 2009-06-02 Innovative Silicon Isi Sa Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
US8134867B2 (en) 2006-04-07 2012-03-13 Micron Technology, Inc. Memory array having a programmable word length, and method of operating same
US7606098B2 (en) 2006-04-18 2009-10-20 Innovative Silicon Isi Sa Semiconductor memory array architecture with grouped memory cells, and method of controlling same
US8295078B2 (en) 2006-05-02 2012-10-23 Micron Technology, Inc. Semiconductor memory cell and array using punch-through to program and read same
US8402326B2 (en) 2006-06-26 2013-03-19 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US8395937B2 (en) 2006-07-11 2013-03-12 Micron Technology, Inc. Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US8264041B2 (en) 2007-01-26 2012-09-11 Micron Technology, Inc. Semiconductor device with electrically floating body
US9276000B2 (en) 2007-03-29 2016-03-01 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8518774B2 (en) 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US9257155B2 (en) 2007-05-30 2016-02-09 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8659948B2 (en) 2007-06-01 2014-02-25 Micron Technology, Inc. Techniques for reading a memory cell with electrically floating body transistor
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8446794B2 (en) 2007-09-17 2013-05-21 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US8194487B2 (en) 2007-09-17 2012-06-05 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US10304837B2 (en) 2007-11-29 2019-05-28 Ovonyx Memory Technology, Llc Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US11081486B2 (en) 2007-11-29 2021-08-03 Ovonyx Memory Technology, Llc Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US9019788B2 (en) 2008-01-24 2015-04-28 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US9553186B2 (en) 2008-09-25 2017-01-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US8790968B2 (en) 2008-09-25 2014-07-29 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US8315083B2 (en) 2008-10-02 2012-11-20 Micron Technology Inc. Techniques for reducing a voltage swing
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US9064730B2 (en) 2009-03-04 2015-06-23 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US8710566B2 (en) 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US9093311B2 (en) 2009-03-31 2015-07-28 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8748959B2 (en) 2009-03-31 2014-06-10 Micron Technology, Inc. Semiconductor memory device
US8400811B2 (en) 2009-04-27 2013-03-19 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device having ganged carrier injection lines
US8861247B2 (en) 2009-04-27 2014-10-14 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US9425190B2 (en) 2009-04-27 2016-08-23 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508970B2 (en) 2009-04-27 2013-08-13 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US9240496B2 (en) 2009-04-30 2016-01-19 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8982633B2 (en) 2009-05-22 2015-03-17 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US9331083B2 (en) 2009-07-10 2016-05-03 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8964461B2 (en) 2009-07-27 2015-02-24 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8947965B2 (en) 2009-07-27 2015-02-03 Micron Technology Inc. Techniques for providing a direct injection semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US9679612B2 (en) 2009-07-27 2017-06-13 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8315099B2 (en) 2009-07-27 2012-11-20 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8587996B2 (en) 2009-07-27 2013-11-19 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US9812179B2 (en) 2009-11-24 2017-11-07 Ovonyx Memory Technology, Llc Techniques for reducing disturbance in a semiconductor memory device
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8964479B2 (en) 2010-03-04 2015-02-24 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8411513B2 (en) 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8369177B2 (en) 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
US9524971B2 (en) 2010-03-15 2016-12-20 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9019759B2 (en) 2010-03-15 2015-04-28 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8547738B2 (en) 2010-03-15 2013-10-01 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US9142264B2 (en) 2010-05-06 2015-09-22 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8630126B2 (en) 2010-05-06 2014-01-14 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US9263133B2 (en) 2011-05-17 2016-02-16 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same

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