JPS62252008A - Manufacturing method of dielectric material for microwave - Google Patents
Manufacturing method of dielectric material for microwaveInfo
- Publication number
- JPS62252008A JPS62252008A JP61096129A JP9612986A JPS62252008A JP S62252008 A JPS62252008 A JP S62252008A JP 61096129 A JP61096129 A JP 61096129A JP 9612986 A JP9612986 A JP 9612986A JP S62252008 A JPS62252008 A JP S62252008A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- dielectric
- temperature
- microwave
- hours
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000003989 dielectric material Substances 0.000 title claims description 4
- 239000011261 inert gas Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 229910052573 porcelain Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 19
- 238000010304 firing Methods 0.000 description 15
- 239000000919 ceramic Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、マイクロ波帯において誘電体共振器等に用い
られる磁器組成物の製造方法に関し、更に詳しくは、B
a (CoZnNb)Os系の誘電体セラミックスを
製造する方法に関するものである。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for manufacturing a ceramic composition used for dielectric resonators, etc. in the microwave band, and more specifically,
The present invention relates to a method of manufacturing a (CoZnNb)Os-based dielectric ceramic.
[従来の技術]
自動車無線や衛星通イδのようなマイクロ波を利用した
通信の分野においては、フィルタ等として誘電体磁器が
多用されていることは周知の通りである。最近のマイク
ロ波半導体デバイスや集積回路の著しい進歩に伴って、
このような分野で使用される誘電体フィルタや共a器等
の回路素子に対する小型化の要求がますます強くなって
いる。[Prior Art] It is well known that dielectric ceramics are often used as filters and the like in the field of communication using microwaves such as automobile radio and satellite communications δ. With recent remarkable advances in microwave semiconductor devices and integrated circuits,
There is an increasing demand for miniaturization of circuit elements such as dielectric filters and recirculators used in such fields.
誘電体磁器を用いたこれらの素子の形状は、主としてセ
ラミックスの誘電率により決まるため、高い誘電率をも
ち、且つ低田失で温度安定性に優れた材料が要求されて
いる。The shape of these elements using dielectric ceramics is determined primarily by the dielectric constant of the ceramic, so materials are required that have a high dielectric constant, low loss, and excellent temperature stability.
このような要求を満たすマイクロ波用誘電体磁器組成物
として、Ba (CoNb)Os系やBa (ZnT
a)Os系などの材料が開発されてきた。Dielectric ceramic compositions for microwave use that meet these requirements include Ba (CoNb)Os and Ba (ZnT).
a) Materials such as Os-based materials have been developed.
[発明が解決しようとする問題点]
なかでもBa (CoZnNb)Ox系の誘電体セラ
ミックスは上記のような要求を満足しうる優れた材料で
あるが、その特性、特にQ値は製造条件により大幅に変
化し、ばらつきが太きい欠点があった。[Problems to be solved by the invention] Among them, Ba (CoZnNb)Ox-based dielectric ceramics are excellent materials that can satisfy the above requirements, but their properties, especially the Q value, vary greatly depending on manufacturing conditions. The problem was that there was wide variation.
またその製造条件の面でも、比較的高温で(14Q O
℃程度)長時間(通常20時間程度)焼成しなければ良
いマイクロ波特性の磁器が得られず、生産性が悪く製造
コストが高くなる等の問題があった。Also, in terms of manufacturing conditions, it is relatively high temperature (14Q O
Porcelain with good microwave properties cannot be obtained unless it is fired for a long time (usually about 20 hours), leading to problems such as poor productivity and high manufacturing costs.
本発明の目的は上記のような従来技術の欠点を解消し、
誘電率が高(温度特性が良好であり、且ツI置火が小さ
いBa (CoZnNb)Oy系のマイクロ波用誘電
体材料を、短い焼成時間で、且つ特性のばらつきを少な
く製造しうる方法を提供することにある。The purpose of the present invention is to eliminate the drawbacks of the prior art as described above,
A method of manufacturing a Ba(CoZnNb)Oy-based microwave dielectric material with a high dielectric constant (good temperature characteristics and small Irrigation temperature) in a short firing time and with less variation in characteristics. It is about providing.
[問題点を解決するための手段]
上記のような目的を達成することのできる本発明は、(
I X) B a (C01/3N bzzi)
03+ X B a (Z n+z、lN bzzi
> 03 (但し、0〈x<0.75)で表される誘
電体組成物を大気中で焼成し、得られた磁器組成物を1
250〜1400℃の不活性ガス雰囲気中で熱処理する
マイクロ波用誘電体材料の製造方法である。[Means for solving the problems] The present invention, which can achieve the above objects, has the following features:
I X) B a (C01/3N bzzi)
03+ X B a (Z n+z, lN bzzi
> 03 (however, 0<x<0.75) is fired in the atmosphere, and the resulting porcelain composition is
This is a method for producing a dielectric material for microwave use, which is heat-treated in an inert gas atmosphere at 250 to 1400°C.
Ba (Co ZnNb)03系の誘電体セラミック
スは大気中で焼成される。窒素ガス雰囲気中で焼成する
とQ値が低くなり使用できないからである0本発明者は
、Ba (CoZnNb)0、系の誘電体磁器組成物に
ついて種々焼成条件等を変えて試作実験を繰り返した結
果、大気中で一旦焼成した後、不活性ガス雰囲気中にお
いて焼成温度よりもやや低い温度で熱処理〈アニール)
することによって、誘電率はほどんど低下させずにQ
(iだけを大幅に向上させることができることを知得し
、本発明を完成させるに至ったものである。Ba(CoZnNb)03-based dielectric ceramics are fired in the atmosphere. This is because firing in a nitrogen gas atmosphere lowers the Q value and makes it unusable.The present inventor has repeatedly conducted trial production experiments with various firing conditions for Ba(CoZnNb) based dielectric ceramic compositions. , After firing in the air, heat treatment (annealing) in an inert gas atmosphere at a temperature slightly lower than the firing temperature.
By doing this, the dielectric constant can be reduced without decreasing Q
(I learned that only i can be significantly improved, and completed the present invention.)
本発明において、焼成は従来同様、大気中で1400℃
程度の高温で行うが、焼成時間は従来技術よりもはるか
に短くてよい、10時間以下、通常2〜3時間程度であ
る。熱処理は焼成温度よりもやや低い1250〜140
0℃で不活性ガス雰囲気中で行う、不活性ガスとしては
例えば窒素ガスを用いることができ、その1度は90%
程度以上とする。In the present invention, firing is carried out at 1400°C in the air as in the past.
However, the firing time may be much shorter than in the prior art, less than 10 hours, usually about 2 to 3 hours. Heat treatment is 1250-140, which is slightly lower than the firing temperature.
The process is carried out at 0°C in an inert gas atmosphere. As the inert gas, for example, nitrogen gas can be used;
level or higher.
熱処理温度を1250〜1400℃としたのは、125
0℃未満だと熱処理の効果がほとんど生じず逆にI40
0℃を超えるとかえってQ値が低下してしまうからであ
る。また不活性ガス中で熱処理するのは、大気中で熱処
理してもその効果がほとんど現れないからである。The heat treatment temperature was set at 1250 to 1400°C.
If it is below 0℃, the effect of heat treatment will hardly occur, and on the contrary, I40
This is because if the temperature exceeds 0°C, the Q value will actually decrease. Further, the reason why the heat treatment is performed in an inert gas is that even if the heat treatment is performed in the air, the effect will hardly be exhibited.
熱処理時間は2〜6時間程度でよい、2時間以上行えば
熱処理効果が現れるし、6時間以上行ってもQ値はほと
んど変化しないからである。The heat treatment time may be about 2 to 6 hours; if the heat treatment is performed for 2 hours or more, the heat treatment effect will appear, and even if the heat treatment is performed for 6 hours or more, the Q value will hardly change.
〔作用]
大気中で高温で焼成したBa (CoZnNb)0、系
の誘電体セラミックスを不活性ガス雰囲気中で適当な温
度で熱処理すると、誘電率Gはほとんど低下せずにQ値
だけを大幅に向上させることができる。[Function] When Ba (CoZnNb)0, system dielectric ceramics fired at high temperature in the air are heat treated at an appropriate temperature in an inert gas atmosphere, the dielectric constant G hardly decreases and only the Q value significantly increases. can be improved.
とくに従来技術では比較的長持間(通常20時間程度)
にわたって焼成トップ温度(1400℃程度)を保持し
なければ高いQ +aが得られなかったものが、本発明
により短時間(2〜3時間)で焼成したものについても
高いQ値を発現させうる。これにより焼成時間は大幅に
短縮される。Especially with conventional technology, it lasts for a relatively long time (usually about 20 hours)
Although a high Q+a could not be obtained unless the firing top temperature (approximately 1400° C.) was maintained for a long period of time, according to the present invention, a high Q value can be achieved even when fired in a short time (2 to 3 hours). This significantly reduces firing time.
[実施例〕
(i x)Ba (Co+zaNbtzs)Os +
x B a (Z n+/xN bz/3) Ox
で表される所定の組成となるように秤量した原料粉体を
ボールミルで20時時間式混合し、1100℃で6時間
仮焼きした。得られた仮焼粉体を再度ボールミルにより
40時時間式微粉砕し、乾燥した後、PVA (ポリビ
ニルアルコール)を含む結合剤を加えて造粒した。この
ペレットを3L/cm”の圧力で成形した後、大気中に
おいて1350〜1450℃で焼成した。[Example] (ix)Ba (Co+zaNbtzs)Os +
x B a (Z n+/xN bz/3) Ox
The raw material powders weighed so as to have a predetermined composition expressed by were mixed in a ball mill for 20 hours and calcined at 1100° C. for 6 hours. The obtained calcined powder was again pulverized for 40 hours using a ball mill, dried, and then granulated with the addition of a binder containing PVA (polyvinyl alcohol). The pellets were molded at a pressure of 3 L/cm'' and then fired at 1350 to 1450°C in the atmosphere.
次にこの焼成品を炉内に窒素ガスを流しながら(窒素ガ
ス濃度90%以上)1200〜1450℃で3時間熱処
理した。また比較のため大気中でも熱処理した試料を作
成した。そして熱処理前の試料と熱処理後の試料につい
て、誘電体共振器法により6.5CIIzにおいて誘電
率εおよび誘電体のQ値(1/Lan δ)を測定し
た。Next, this fired product was heat-treated at 1200 to 1450° C. for 3 hours while flowing nitrogen gas into the furnace (nitrogen gas concentration of 90% or more). For comparison, we also prepared samples that were heat-treated in the air. Then, the dielectric constant ε and the Q value (1/Lan δ) of the dielectric were measured at 6.5 CIIz using the dielectric resonator method for the sample before heat treatment and the sample after heat treatment.
試作測定した試料の一部の組成並びにそのマイクロ波誘
電特性を次表に示す。The composition and microwave dielectric properties of some of the prototype samples measured are shown in the table below.
表
この表において*印を付した試料が本発明の範囲外のも
のである。この測定結果から熱処理前と熱処理後を比べ
た時、誘電率εはいずれの場合でも若干低下する傾向が
みられるものの実質的にはほとんど変化しないことが判
る。それに対してQ値は大きく変化しうる0本発明範囲
に含まれるような適正な熱処理条件を満たせば、焼成時
間が短くて熱処理前のQ値が低くても2〜5倍程度向上
させうる。しかし熱処理温度が低すぎても、逆に高ずぎ
てもQ値は上がらない。Table In this table, samples marked with * are outside the scope of the present invention. From this measurement result, when comparing before and after heat treatment, it can be seen that although the dielectric constant ε tends to decrease slightly in both cases, it does not substantially change. On the other hand, the Q value can vary greatly.If proper heat treatment conditions within the range of the present invention are satisfied, the firing time is short and even if the Q value before the heat treatment is low, it can be improved by about 2 to 5 times. However, the Q value does not increase even if the heat treatment temperature is too low or too high.
大気中での熱処理では、例え適正な温度で行っても熱処
理効果はほとんど生じない、更に高温で長時間焼成した
Q値の高いものにおいても熱処理効果が現れることが判
る。It can be seen that heat treatment in the atmosphere produces almost no heat treatment effect even if it is performed at an appropriate temperature, and that heat treatment effects appear even in products with a high Q value that are fired at high temperatures for a long time.
[発明の効果]
本発明は上記のようにBa (CoZnNb)0、系
の誘電体セラミックスを大気中で高温で一旦焼成し、そ
の後、不活性ガス雰囲気中で焼成温度よりもやや低い温
度で熱処理する方法としたから、誘電率8がほとんど低
下することなくQ値だけを大幅に向上させることができ
る優れた効果を有するものである。。[Effects of the Invention] As described above, the present invention involves firing Ba(CoZnNb)0-based dielectric ceramics in the air at a high temperature, and then heat-treating them in an inert gas atmosphere at a temperature slightly lower than the firing temperature. This method has an excellent effect in that only the Q value can be significantly improved with almost no decrease in the dielectric constant 8. .
特に従来技術では比較的長持間(通常20時間程度)に
わたって焼成トップ温度(1400℃程度)を保持しな
ければ高いQ値が得られなかったものが、本発明により
短時間(2〜3時間)で焼成したものについても高いQ
値を発現させうろことが可能となり、これにより焼成時
間が大幅に短縮され、生産性の向上と省エネルギー化を
実現できる効果がある。In particular, with the conventional technology, a high Q value could not be obtained unless the firing top temperature (about 1400°C) was maintained for a relatively long period of time (usually about 20 hours), but with the present invention, it is possible to obtain a high Q value in a short time (2 to 3 hours). There is also a high Q for those fired in
This allows the firing time to be significantly reduced, which has the effect of improving productivity and saving energy.
Claims (1)
3)O_3+xBa(Zn_1_/_2Nb_2_/_
3)O_3(但し0<x<0.75)で表される誘電体
組成物を大気中で焼成し、得られた磁器組成物を125
0〜1400℃の不活性ガス雰囲気中で熱処理すること
を特徴とするマイクロ波用誘電体材料の製造方法。1, (1-x)Ba(Co_1_/_3Nb_2_/_
3) O_3+xBa(Zn_1_/_2Nb_2_/_
3) A dielectric composition represented by O_3 (0<x<0.75) is fired in the atmosphere, and the resulting porcelain composition is heated to 125
A method for producing a dielectric material for microwave use, which comprises heat-treating in an inert gas atmosphere at 0 to 1400°C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61096129A JPS62252008A (en) | 1986-04-25 | 1986-04-25 | Manufacturing method of dielectric material for microwave |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61096129A JPS62252008A (en) | 1986-04-25 | 1986-04-25 | Manufacturing method of dielectric material for microwave |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62252008A true JPS62252008A (en) | 1987-11-02 |
JPH0546642B2 JPH0546642B2 (en) | 1993-07-14 |
Family
ID=14156774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61096129A Granted JPS62252008A (en) | 1986-04-25 | 1986-04-25 | Manufacturing method of dielectric material for microwave |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62252008A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5073528A (en) * | 1989-05-30 | 1991-12-17 | Sumitomo Metal Mining Co., Ltd. | Dielectric ceramic and process for producing the same |
WO2009069707A1 (en) * | 2007-11-29 | 2009-06-04 | Kyocera Corporation | Dielectric ceramics, process for production thereof, and resonator |
-
1986
- 1986-04-25 JP JP61096129A patent/JPS62252008A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5073528A (en) * | 1989-05-30 | 1991-12-17 | Sumitomo Metal Mining Co., Ltd. | Dielectric ceramic and process for producing the same |
WO2009069707A1 (en) * | 2007-11-29 | 2009-06-04 | Kyocera Corporation | Dielectric ceramics, process for production thereof, and resonator |
KR101122046B1 (en) * | 2007-11-29 | 2012-06-13 | 쿄세라 코포레이션 | Dielectric ceramics, process for production thereof, and resonator |
Also Published As
Publication number | Publication date |
---|---|
JPH0546642B2 (en) | 1993-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |