JPS62195804A - Transparent insulating film and dipping solution for formingtransparent film - Google Patents
Transparent insulating film and dipping solution for formingtransparent filmInfo
- Publication number
- JPS62195804A JPS62195804A JP61036260A JP3626086A JPS62195804A JP S62195804 A JPS62195804 A JP S62195804A JP 61036260 A JP61036260 A JP 61036260A JP 3626086 A JP3626086 A JP 3626086A JP S62195804 A JPS62195804 A JP S62195804A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- transparent insulating
- organic
- film
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007598 dipping method Methods 0.000 title description 4
- 238000007654 immersion Methods 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 10
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 7
- 150000003377 silicon compounds Chemical class 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 229920002678 cellulose Polymers 0.000 claims description 2
- 239000001913 cellulose Substances 0.000 claims 1
- 239000010695 polyglycol Substances 0.000 claims 1
- 229920000151 polyglycol Polymers 0.000 claims 1
- 239000011521 glass Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 6
- 238000010828 elution Methods 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- -1 silane isocyanate compound Chemical class 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 235000019439 ethyl acetate Nutrition 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 2
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 1
- SYMYWDHCQHTNJC-UHFFFAOYSA-J 3-oxobutanoate;zirconium(4+) Chemical compound [Zr+4].CC(=O)CC([O-])=O.CC(=O)CC([O-])=O.CC(=O)CC([O-])=O.CC(=O)CC([O-])=O SYMYWDHCQHTNJC-UHFFFAOYSA-J 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- AGNCIFQFCBBMBR-UHFFFAOYSA-N acetic acid silane Chemical compound [SiH4].C(C)(=O)O.C(C)(=O)O.C(C)(=O)O AGNCIFQFCBBMBR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- BSDOQSMQCZQLDV-UHFFFAOYSA-N butan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] BSDOQSMQCZQLDV-UHFFFAOYSA-N 0.000 description 1
- 235000010980 cellulose Nutrition 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Inorganic Insulating Materials (AREA)
- Liquid Crystal (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
「技術分野」
本発明は、例えば液晶表示素子、エレクトロクロミック
素子、エレクトロルミネッセンス素子などに用いられる
透明絶縁膜および透明絶縁膜形成用浸漬液に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a transparent insulating film and an immersion liquid for forming a transparent insulating film used for, for example, liquid crystal display elements, electrochromic devices, electroluminescent devices, etc.
「従来技術およびその問題点」
例えば液晶表示素子、エレクトロクロミック素子、エレ
クトロルミネッセンス素子などにおいては、図に示すよ
うに、ガラス基板ｌと透明電極２との間に透明絶縁膜３
が形成されることがある。"Prior art and its problems" For example, in liquid crystal display elements, electrochromic elements, electroluminescent elements, etc., as shown in the figure, a transparent insulating film 3 is used between a glass substrate l and a transparent electrode 2.
may be formed.
この透明絶縁膜３は、駆動用透明電極２が外部光の反射
により見えるのを防ぐと共に、ソーダカラスなどの基板
１から拡散溶出するＮａをトラップする役割りをなして
いる。This transparent insulating film 3 prevents the driving transparent electrode 2 from being seen due to reflection of external light, and also serves to trap Na diffused and eluted from the substrate 1 such as soda glass.
従来、この種の透明絶縁膜として、有機金属を溶かした
溶液にガラス基板を浸漬して溶液を塗布させ、５００°
Ｃ程度で焼成する、いわゆる浸漬法により形成したもの
が知られており、例えば機能分離型のＴｉＱ□／Ｓ ｉ
０２の２層からなる透明絶縁膜が知られている。この透
明絶縁膜は、ＳｉＱ、、膜でＮａの拡散溶出を防ぎ、高
屈折率のＴｉＱ２膜で透明電極を見えにくくするように
している。Conventionally, this type of transparent insulating film was produced by immersing a glass substrate in a solution containing an organic metal and coating the solution at 500°.
Products formed by the so-called immersion method, which is fired at about C, are known. For example, functionally separated TiQ□/Si
A transparent insulating film consisting of two layers of 02 is known. This transparent insulating film uses a SiQ film to prevent diffusion and elution of Na, and a high refractive index TiQ2 film to make the transparent electrode difficult to see.
しかしながら、この透明絶縁膜では、溶液にガラス基板
を浸漬して塗布し、焼成する工程を２回繰返さなければ
ならないので、生産性が悪く、コスト高となる欠点があ
った。However, with this transparent insulating film, the process of immersing the glass substrate in a solution, coating it, and baking it must be repeated twice, resulting in poor productivity and high costs.
一方、スパッタリング、真空蒸着、ＣＶＤ法などにより
形成した窒化珪素、炭化珪素、あるいはヒ素、アンチモ
ンなどをドープしたＳｉＯ２化合物からなる透明絶縁膜
も知られている。On the other hand, transparent insulating films made of silicon nitride, silicon carbide, or SiO2 compounds doped with arsenic, antimony, etc., formed by sputtering, vacuum deposition, CVD, etc., are also known.
しかしながら、この透明絶縁膜では、製造設備が大がか
りとなり、量産に適していないという欠点があった。However, this transparent insulating film requires large-scale manufacturing equipment and is not suitable for mass production.
「発明の目的」
本発明の目的は、上記従来技術の問題点に鑑み、浸漬法
によって形成可能な単層膜で、透明電極の見えを抑え、
ガラス基板からのＮａの拡散溶出を防Ｉにできるように
した透明絶縁膜および透明絶縁膜形成用浸漬液を提供す
ることにある。"Objective of the Invention" In view of the problems of the prior art described above, the object of the present invention is to suppress the visibility of transparent electrodes using a single layer film that can be formed by a dipping method.
An object of the present invention is to provide a transparent insulating film and an immersion liquid for forming a transparent insulating film that can prevent diffusion and elution of Na from a glass substrate.
「発明の構成」
本発明の透明絶縁膜は、有機リンまたは五酸化リン、有
機ジルコニウムおよび有機シリコン化合物の混合物を焼
成して得られるＰ＋Ｑ５−ＺｒＯ□−９ｉＱ２系酸化物
を含有することを特徴とする。"Structure of the Invention" The transparent insulating film of the present invention is characterized in that it contains a P+Q5-ZrO□-9iQ2-based oxide obtained by firing a mixture of organic phosphorus or phosphorus pentoxide, organic zirconium, and organic silicon compounds. do.
また、本発明の透明絶縁膜形成用浸漬液は、焼成により
Ｐ２Ｏ５−ＺｒＯ２−９ｉ０２系酸化物を形成する有
機リンまたは五酸化リン、有機ジルコニウムおよび有機
シリコン化合物の混合物を有機溶媒に溶解してなること
を特徴とする。The immersion liquid for forming a transparent insulating film of the present invention is obtained by dissolving in an organic solvent a mixture of organic phosphorus or phosphorus pentoxide, organic zirconium, and organic silicon compound that forms a P2O5-ZrO2-9i02-based oxide upon firing. It is characterized by
このように、本発明では、高屈折率のＺｒＱ、、−５ｉ
Ｑ、、系酸化物にＰ２Ｏ５を添加したことにより、透明
電極の見えを抑えると共に、Ｎａの拡散溶出を防止する
ことができる。すなわち、Ｐ２Ｏ５はｐ伺近に負の電荷
を局在化させる。したがって、正イオンとなるＮａは、
Ｐ２Ｏ５付近で捕獲され、絶縁膜中での熱拡散がしにく
くなる。実際、Ｐ２Ｏ５を添加しないＺｒＯｚ−５１０
２絶縁膜に比べると、本発明のＰ２Ｏｓ −ＺｒＯ２−
５ｉ０２系の絶縁膜は、Ｎａ溶出量が１／２以下となる
。In this way, in the present invention, high refractive index ZrQ, -5i
By adding P2O5 to the Q.-based oxide, it is possible to suppress the visibility of the transparent electrode and prevent the diffusion and elution of Na. That is, P2O5 localizes negative charges near p. Therefore, Na, which becomes a positive ion, is
It is captured near P2O5, making it difficult for heat to diffuse in the insulating film. In fact, ZrOz-510 without adding P2O5
2 insulating film, the P2Os -ZrO2-
In the 5i02-based insulating film, the amount of Na elution is 1/2 or less.
透明絶縁膜を浸漬法により形成可能ならしめるには、有
機リンまたは五酸化リン、有機ジルコニウムおよび有機
シリコン化合物を低沸点溶媒に溶解させた浸漬液を用い
る必要があり、かつ、ソーダガラスなどの基板に成膜す
るためには、５００℃付近の焼成温度でＰ２Ｏ５−Ｚｒ
Ｏ２−ＳｉＯ２系酸化物となることが必要とされる。In order to be able to form a transparent insulating film by the immersion method, it is necessary to use an immersion liquid in which organic phosphorus or phosphorus pentoxide, organic zirconium, and organic silicon compounds are dissolved in a low boiling point solvent, and a substrate such as soda glass must be used. In order to form a film of P2O5-Zr at a firing temperature of around 500°C,
It is required that the oxide becomes an O2-SiO2-based oxide.
この条件を満足させるため、有機リンとしては、トリエ
チルリン酸、トリブチルリン酸等を用いることができる
。ただし、有機リンの代りに五酸化リンを直接用いても
よい。また、有機ジルコニウムとしては、ジルコニウム
アルコレート、ジルコニウムアセチルアセトネート、ジ
ルコニウムアセト酢酸エステル等を用いることができる
。さらに、有機シリコン化合物としては、アルコキシシ
ランおよびその縮合体、酢酸シラン、シランイソシアネ
ート化合物等を用いることができる。In order to satisfy this condition, triethyl phosphoric acid, tributyl phosphoric acid, etc. can be used as the organic phosphorus. However, phosphorus pentoxide may be used directly instead of organic phosphorus. Further, as the organic zirconium, zirconium alcoholate, zirconium acetylacetonate, zirconium acetoacetate, etc. can be used. Further, as the organic silicon compound, alkoxysilane and its condensate, acetic acid silane, silane isocyanate compound, etc. can be used.
また、有機溶媒としては、低沸点で溶解能の高いものが
用いられ、例えば低級アルコール、酢酸エステル、 Ｍ
ＥＫ 、アセトン、ベンゼン、 ＴＨＦ、エーテル類等
が好ましい。この有機溶媒中には、さらに必要に応じて
粘性剤を添加してもよく、かかる粘性剤としては、例え
ばニトロセルロース、エチルセルロース等の各種セルロ
ース、ポリエチレングリコール等のグリコールのポリマ
ーなどが好ましく使用される。In addition, as the organic solvent, those with a low boiling point and high dissolving power are used, such as lower alcohols, acetic esters, M
EK, acetone, benzene, THF, ethers, etc. are preferred. A viscosity agent may be further added to this organic solvent if necessary, and preferred examples of such viscosity agents include various celluloses such as nitrocellulose and ethylcellulose, and glycol polymers such as polyethylene glycol. .
本発明の透明絶縁膜において、各成分の含有割合は、特
に限定されないが、５Ｉ０２ ； ３０〜５０重量％、
ＺｒＯ２； ３０〜５０重量％、 Ｐ２Ｏ５； １０〜
２０重量％とすることが好ましい。ＳｉＯ２が３０重量
％未満では厚い膜が得られなくなり、５０重量％を超え
ると電極のパターンが見えやすくなる。また、 ＺｒＱ
２が３０重量％未満では屈折率が低くなるので電極のパ
ターンが見えやすくなり、５０重量％を超えるとクラッ
クが入りやすくなる。さらに、Ｐ２Ｏ５が１０重量％未
満ではＮａの熱拡散防止効果が充分に得られず、２０重
量％を超えると成膜性が悪くなるという問題を生ずる。In the transparent insulating film of the present invention, the content ratio of each component is not particularly limited, but 5I02; 30 to 50% by weight;
ZrO2; 30~50% by weight, P2O5; 10~
The content is preferably 20% by weight. If SiO2 is less than 30% by weight, a thick film cannot be obtained, and if it exceeds 50% by weight, the electrode pattern becomes more visible. Also, ZrQ
If 2 is less than 30% by weight, the refractive index will be low, making it easier to see the electrode pattern, and if it exceeds 50% by weight, cracks will easily occur. Further, if the P2O5 content is less than 10% by weight, the effect of preventing thermal diffusion of Na cannot be sufficiently obtained, and if it exceeds 20% by weight, there arises a problem that film forming properties are deteriorated.
透明絶縁膜を上記のような組成とするため、透明絶縁膜
形成用浸漬液の作製に際し、その中に含まれる有機リン
または五酸化リン、有機ジルコニウムおよび有機シリコ
ン化合物が焼成されたときに−Ｆ記の組成となるように
、それらの配合割合を調整することが好ましい。なお、
本発明の透明絶縁膜は、 Ｐ２（］Ｓ 、 ＺｒＯｚ、
５１０２以外の他の成分を１０重燵％以ドの範囲で含有
していてもよい。In order to make the transparent insulating film have the above composition, when the immersion liquid for forming the transparent insulating film is prepared, when the organic phosphorus or phosphorus pentoxide, organic zirconium, and organic silicon compound contained therein are fired, -F It is preferable to adjust their blending ratio so that the following composition is achieved. In addition,
The transparent insulating film of the present invention includes P2(]S, ZrOz,
Components other than 5102 may be contained in an amount of 10% or more.
「発明の実施例」
実施例１
ｈ機すンとしてトリエチルリン酸
（（Ｃ２Ｉｔｓ Ｏ）３ ＰＯ） ２．８重量％、有機
ジルコニウムとしてジルコニウムテトラブトキシド
１３、５重Ｌ４％、有機シリコンとしてエチルシリケー
トの縮合体（Ｓ ｉｎｏｎ−１ （ＯＣ２ ｔｌｓ ）
２ ｒｌ＋２） １４．３重量％を用い、有機溶媒とし
てメチルエチルケトン８９重量％、粘性剤として二］・
ロセルローズ０．４重量％を用い、これらを混合し溶解
させて透明絶縁膜形成用浸漬液を作製した。"Embodiments of the Invention" Example 1 2.8% by weight of triethyl phosphoric acid ((C2ItsO)3PO) as a component, 13% by weight of zirconium tetrabutoxide as an organic zirconium, 4% of 5-fold L, and ethyl silicate as an organic silicon. Condensate (S inon-1 (OC2 tls)
2 rl+2) 14.3% by weight, 89% by weight of methyl ethyl ketone as the organic solvent, and 2] as the viscosity agent.
Using 0.4% by weight of rosellose, these were mixed and dissolved to prepare an immersion liquid for forming a transparent insulating film.
そして、この透明絶縁膜形成用浸漬液にソーダガラスか
らなる基板を浸漬して液を塗布させ、５００°Ｃで３０
分間焼成して透明絶縁膜を形成した。Then, a substrate made of soda glass was immersed in this dipping solution for forming a transparent insulating film, and the solution was coated at 500°C for 30 minutes.
A transparent insulating film was formed by baking for a minute.
こうして得られた透明絶縁膜は、Ｐ２（１５； １０重
軟％、ＺｒＱ，、 ； ４０重品％、ＳｉＱ，、 ；
４０重量％からなるものであった。The transparent insulating film thus obtained was P2(15; 10% heavy weight, ZrQ,; 40% heavy weight, SiQ,;
It consisted of 40% by weight.
また、比較として、２ｒＱ２； ５０重に％、Ｓ１０２
； ５０重部％からなるＺｒＯ２− ＳｉＯ，系の透
明絶縁膜と、ＳｉＱ，のみからなる透明絶縁膜とを形成
した。Also, for comparison, 2rQ2; 50%, S102
; A ZrO2-SiO based transparent insulating film consisting of 50 parts by weight and a transparent insulating film consisting only of SiQ were formed.
ソーダガラス基板上にＬ記の透明絶縁膜をそれぞれ形成
した後、それらの上に、ｙらにＩＴＯ膜からなる透明電
極を厚さ７００〜８００人で形成し、パターンエツチン
グした。そして、各透明絶縁膜の特性を評価した結果を
次表に示す。この表において、電極見えの評価は、外部
光の反射による電極見えの状態を目視で判定した。また
、Ｎａの熱拡散溶出量（Ｘ）は、ソーダガラス基板から
絶縁膜を通して温水中に溶出するＮａを７址し、ＳｉＱ
，、膜でのＮａ溶出量を１００とする相対値で評価した
。After each of the transparent insulating films listed in L was formed on a soda glass substrate, a transparent electrode made of an ITO film was formed thereon to a thickness of 700 to 800 yen, and pattern etched. The results of evaluating the characteristics of each transparent insulating film are shown in the following table. In this table, the electrode visibility was evaluated by visually determining the state of electrode visibility due to reflection of external light. In addition, the thermal diffusion elution amount (X) of Na is calculated as follows:
,,Evaluation was made using a relative value with the amount of Na eluted from the membrane as 100.
（以下、余白）
この表より、本発明によるＰ ２Ｑ ５ −Ｚ ｒ ０
２ −Ｓ ｌ ０ ７系の透明絶縁膜は、電極見えの
状態、成膜性が良好であり、Ｎａ溶出量はＳｉ［］２か
らなる透明絶縁膜の１、５倍となったが実用−１−支障
のない範囲であることがわかる。これに対して、ｚｒｏ
２− Ｓ１０２系の透明絶縁膜は、Ｎａ溶出量が極めて
多く、また、Ｓｉ０２からなる透明絶縁膜は、電極の見
えを防ｉ卜する効果が乏しいという問題点がある。(Hereinafter, blank space) From this table, P 2Q 5 -Z r 0 according to the present invention
2-S l 0 7-based transparent insulating film has good electrode visibility and film formability, and the amount of Na eluted is 1.5 times that of the transparent insulating film made of Si[]2, but it is not suitable for practical use. 1- It can be seen that there is no problem. On the other hand, zro
2- The S102-based transparent insulating film has a problem in that the amount of Na eluted is extremely large, and the transparent insulating film made of Si02 has a poor effect of preventing the electrode from being seen.
実施例２
五酸化リン（Ｐ２Ｏ５ ） １．７重品％、有機ジルコ
ニウムとしてジルコニラムチ）・ラエチルアセＩ・アセ
テート（Ｚｒ（ＦＡＡ）４） １７．５重囲％、有機シ
リコンとしてエチルシリケートの縮合体
（ＳｉｎＯｎ−１ （ＯＣ２１１５）２ｎ＋２ ） １
０．８虫酸％を用い、有機溶媒として酢酸エチル３５重
星％、エタノール３５市量％を用い、これらを混合し溶
解させて透明絶縁膜形成用浸漬液を作製した。Example 2 Phosphorus pentoxide (P2O5) 1.7% by weight, organic zirconium such as zirconyl lamti), laethylace I, acetate (Zr(FAA)4) 17.5% by weight, organic silicon by ethyl silicate condensate (SinOn) -1 (OC2115)2n+2 ) 1
An immersion liquid for forming a transparent insulating film was prepared by mixing and dissolving 0.8% insectic acid, 35% ethyl acetate, and 35% ethanol by weight as organic solvents.
そして、この透明絶縁膜形成用浸漬液にソーダガラスか
らなる基板を浸漬して液を塗４ｊさせ、５００℃で３０
分間焼成して透明絶縁膜を形成した。Then, a substrate made of soda glass was immersed in this immersion liquid for forming a transparent insulating film, the liquid was applied 4j, and the liquid was heated at 500°C for 30 minutes.
A transparent insulating film was formed by baking for a minute.
こうして得られた透明絶縁膜は、Ｐ２Ｏ５； １８重量
％、ＺｒＱ２ ； ３７重量％、ＳｉＱ、、 ； ４５
重量％からなるものであった。この透明絶縁膜は屈折率
１．６０、膜厚１Ｂ００人であり、電極具えおよびＮａ
熱拡散防止効果は、実施例１と同程度に良好であった。The transparent insulating film thus obtained contained P2O5: 18% by weight, ZrQ2: 37% by weight, SiQ, 45% by weight.
% by weight. This transparent insulating film has a refractive index of 1.60, a film thickness of 1B00, and is equipped with electrodes and Na
The thermal diffusion prevention effect was as good as in Example 1.
「発明の効果」
以上説明したように、本発明によれば、操作、設備が簡
単な浸漬法による単一の層で、透明電極の見えを抑える
ことができると共に、Ｎａの熱拡散による溶出を実用上
充分な程度に防止することができる。"Effects of the Invention" As explained above, according to the present invention, the visibility of the transparent electrode can be suppressed with a single layer formed by the dipping method, which is easy to operate and use, and the elution of Na due to thermal diffusion can be suppressed. This can be prevented to a practically sufficient degree.
図はガラス基板上に透明絶縁膜を形成した例を示す断面
図である。
図中、ｌはガラス基板、２は透明電極、３は透明絶縁膜
である。The figure is a cross-sectional view showing an example in which a transparent insulating film is formed on a glass substrate. In the figure, l is a glass substrate, 2 is a transparent electrode, and 3 is a transparent insulating film.
Claims (3)
よび有機シリコン化合物の混合物を焼成して得られる
Ｐ＿２Ｏ＿５−ＺｒＯ＿２−ＳｉＯ＿２系酸化物を含有
することを特徴とする透明絶縁膜。(1) Obtained by firing a mixture of organic phosphorus or phosphorus pentoxide, organic zirconium, and organic silicon compounds
A transparent insulating film characterized by containing a P_2O_5-ZrO_2-SiO_2-based oxide.
＿２系酸化物を形成する有機リンまたは五酸化リン、有
機ジルコニウムおよび有機シリコン化合物の混合物を有
機溶媒に溶解してなることを特徴とする透明絶縁膜形成
用浸漬液。(2) By firing P_2O_5-ZrO_2-SiO
An immersion liquid for forming a transparent insulating film, characterized in that it is made by dissolving a mixture of organic phosphorus or phosphorus pentoxide, organic zirconium, and organic silicon compounds forming a _2-based oxide in an organic solvent.
には、セルロース、ポリグリコールから選ばれた少なく
とも一種の粘性剤が添加されている透明絶縁膜形成用浸
漬液。(3) The immersion liquid for forming a transparent insulating film according to claim 2, wherein at least one viscosity agent selected from cellulose and polyglycol is added to the organic solvent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61036260A JPS62195804A (en) | 1986-02-20 | 1986-02-20 | Transparent insulating film and dipping solution for formingtransparent film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61036260A JPS62195804A (en) | 1986-02-20 | 1986-02-20 | Transparent insulating film and dipping solution for formingtransparent film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62195804A true JPS62195804A (en) | 1987-08-28 |
Family
ID=12464796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61036260A Pending JPS62195804A (en) | 1986-02-20 | 1986-02-20 | Transparent insulating film and dipping solution for formingtransparent film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62195804A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH037973U (en) * | 1989-06-08 | 1991-01-25 | ||
| WO2012176840A1 (en) * | 2011-06-23 | 2012-12-27 | 富士フイルム株式会社 | Transparent insulating laminate and printed circuit board using same |
-
1986
- 1986-02-20 JP JP61036260A patent/JPS62195804A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH037973U (en) * | 1989-06-08 | 1991-01-25 | ||
| WO2012176840A1 (en) * | 2011-06-23 | 2012-12-27 | 富士フイルム株式会社 | Transparent insulating laminate and printed circuit board using same |
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