JPS61285428A - Liquid crystal display element - Google Patents
Liquid crystal display elementInfo
- Publication number
- JPS61285428A JPS61285428A JP12757185A JP12757185A JPS61285428A JP S61285428 A JPS61285428 A JP S61285428A JP 12757185 A JP12757185 A JP 12757185A JP 12757185 A JP12757185 A JP 12757185A JP S61285428 A JPS61285428 A JP S61285428A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- electrode
- glass substrate
- liquid crystal
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000011521 glass Substances 0.000 claims abstract description 26
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 150000002500 ions Chemical class 0.000 abstract description 8
- 239000003513 alkali Substances 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000010828 elution Methods 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 150000002902 organometallic compounds Chemical class 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 238000007654 immersion Methods 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- PVZMSIQWTGPSHJ-UHFFFAOYSA-N butan-1-ol;tantalum Chemical compound [Ta].CCCCO.CCCCO.CCCCO.CCCCO.CCCCO PVZMSIQWTGPSHJ-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UARGAUQGVANXCB-UHFFFAOYSA-N ethanol;zirconium Chemical compound [Zr].CCO.CCO.CCO.CCO UARGAUQGVANXCB-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 description 1
- 230000029305 taxis Effects 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- MYWQGROTKMBNKN-UHFFFAOYSA-N tributoxyalumane Chemical compound [Al+3].CCCC[O-].CCCC[O-].CCCC[O-] MYWQGROTKMBNKN-UHFFFAOYSA-N 0.000 description 1
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 description 1
- -1 triisoproxyaluminum Chemical compound 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、液晶表示素子に関し、特に、電極基板のガラ
ス基板と電極膜との間に形成される絶縁被膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a liquid crystal display element, and particularly to an insulating coating formed between a glass substrate and an electrode film of an electrode substrate.
一般に、液晶表示素子(L tquid Crysta
lD 1splay :以下、LCDと略記する)の
電極基板は、第1図に示すように、ガラス基板1と、こ
のガラス基板1の上面に一様に被着された絶縁被膜2と
、この絶縁被膜2の上面に表示パターンに応じた形状に
形成された電極膜3と、上面が平坦面となるように電極
膜3と絶縁被膜2とを被覆する配向膜4とで構成されて
いる。Generally, liquid crystal display elements (LCD)
As shown in FIG. 1, the electrode substrate of the LD 1spray (hereinafter abbreviated as LCD) consists of a glass substrate 1, an insulating coating 2 uniformly deposited on the upper surface of the glass substrate 1, and an insulating coating coated with the insulating coating. 2, and an alignment film 4 that covers the electrode film 3 and the insulating film 2 so that the top surface is flat.
従来のLCDにおける絶縁液11!2は、真空蒸着法ま
たは化学スプレー法を用いて、主として二酸化シリコン
(Sin、)もしくは二酸化チタン(Ti0、)で形成
されていた。The insulating liquid 11!2 in conventional LCDs is mainly formed of silicon dioxide (Sin,) or titanium dioxide (Ti0,) using a vacuum deposition method or a chemical spray method.
しかし、従来用いられていた真空蒸着法は、優れた特性
の絶縁被膜を形成することはできるが、量産性の点で問
題があった。However, although the conventionally used vacuum evaporation method can form an insulating film with excellent characteristics, it has problems in terms of mass production.
また、化学スプレー法は、形成される絶縁被膜の特性が
劣るとともに、材料の無駄が生じやすいという問題点が
あった。Further, the chemical spray method has problems in that the properties of the insulating film formed are poor and materials are likely to be wasted.
一方、印刷法を使用することも考えられるが、量産性の
点で問題がある。On the other hand, it is also possible to use a printing method, but this poses a problem in terms of mass production.
上記の各種方法に比べて、浸漬法は、数多くの電極基板
を同時に処理できるとともに材料の無駄が生ぜず、量産
に適しているという特徴がある。Compared to the various methods described above, the immersion method is characterized in that it can process a large number of electrode substrates simultaneously, does not waste materials, and is suitable for mass production.
しかし、従来の浸漬法では、Singのみで絶縁被膜を
作った場合に、その屈折率がインジウム−スズ(In−
3n)酸化物からなる電極膜の屈折率より小さくなるた
めに、LCDとしてみたときに非駆動時に電極パターン
が目立つという問題点があった。However, in the conventional immersion method, when an insulating film is made using only Sing, its refractive index is
3n) Since the refractive index is lower than that of the electrode film made of oxide, there is a problem in that when viewed as an LCD, the electrode pattern stands out when not driven.
また、絶縁被膜の屈折率を上げるために、Ti0tを2
層に重ねることも行われているが、工程が増えてコスト
高になるという問題点があった。In addition, in order to increase the refractive index of the insulating film, Ti0t was added to 2
Layering has also been done, but this has the problem of increasing the number of steps and increasing costs.
さらに、TiO□を単層だけ設けると、ガラス基板から
液晶へのナトリウムイオン(Na”)等のアルカリイオ
ンの溶出が生じ、信頼性テストにおいて表示パターンの
にじみが生じるという問題点があった。Further, if only a single layer of TiO□ is provided, alkali ions such as sodium ions (Na'') are eluted from the glass substrate to the liquid crystal, which causes a problem in that display patterns smear in reliability tests.
さらにまた、従来のLCDにおいては、LCD組立後の
工程での熱処理、例えば、端子部にビンコネクタを接続
するためにAgペーストを印刷し焼成する処理によって
絶縁被膜が劣化しLCDの信頼性を低下させるという問
題点があった。Furthermore, in conventional LCDs, the insulation coating deteriorates due to heat treatment in the process after LCD assembly, such as printing and baking Ag paste to connect the pin connector to the terminals, reducing the reliability of the LCD. There was a problem with letting it work.
本発明は、上記従来の問題点を解消するために、アルカ
リイオンの液晶への溶出を防止し、絶縁被膜の屈折率を
電極膜のそれに近づけることにより電極パターンを見え
にくくするとともに、後工程での熱処理による絶縁被膜
の劣化を防止し、よって信頼性および表示品位を向上さ
せるようにしたLCDを提供することを目的とする。In order to solve the above-mentioned conventional problems, the present invention prevents alkaline ions from leaching into the liquid crystal, makes the refractive index of the insulating film close to that of the electrode film, makes the electrode pattern less visible, and also makes it difficult to see the electrode pattern in the subsequent process. An object of the present invention is to provide an LCD that prevents deterioration of an insulating film due to heat treatment, thereby improving reliability and display quality.
本発明に係るLCDは、二酸化ケイ素と、二酸化ケイ素
以外の網目形成酸化物と、原子量の小さい元素の中間酸
化物と、原子量の大きい元素の中間酸化物とを含む膜で
なる絶縁被膜をガラス基板と電極膜との間に有する電極
基板を備える。The LCD according to the present invention has an insulating coating formed of a film containing silicon dioxide, a network-forming oxide other than silicon dioxide, an intermediate oxide of an element with a small atomic weight, and an intermediate oxide of an element with a large atomic weight, on a glass substrate. and an electrode film.
本発明によるLCDにおいては、二酸化ケイ素と、二酸
化ケイ素以外の網目形成酸化物と、原子量の小さい元素
の中間酸化物と、原子量の大きい元素の中間酸化物とを
含む絶縁被膜が、原子量の異なる元素の酸化物を複数含
むことによりその構造がよりランダムにより複雑になる
ことによって、ガラス基板から液晶へのNa”等のアル
カリイオンの溶出を有効に防止する。In the LCD according to the present invention, the insulating coating includes silicon dioxide, a network-forming oxide other than silicon dioxide, an intermediate oxide of an element with a small atomic weight, and an intermediate oxide of an element with a large atomic weight. By including a plurality of oxides, the structure becomes more random and more complex, thereby effectively preventing the elution of alkali ions such as Na'' from the glass substrate to the liquid crystal.
また、絶縁被膜の屈折率を電極膜のそれに近づけること
により非駆動時に電極パターンを見えにりくシて、LC
Dの視認性を高める。In addition, by bringing the refractive index of the insulating film closer to that of the electrode film, the electrode pattern becomes less visible when not driven, and the LC
Increase visibility of D.
さらに、LCD形成後の熱処理による絶縁被膜の劣化が
防止され、LCDの信頼性が向上する。Furthermore, deterioration of the insulating film due to heat treatment after LCD formation is prevented, and the reliability of the LCD is improved.
次に、実施例の説明に入る前に、ガラス構成元素の分類
について説明する。Next, before going into the description of Examples, the classification of glass constituent elements will be explained.
一般的にガラス構成元素の酸化物を分類すると、(11
比較的共有結合性が強い網目形成酸化物、(2)比較的
イオン結合性が強く単独では固体を形成し得ない網目修
飾酸化物、
(3)網目形成酸化物と網目修飾酸化物との中間の性質
を示す中間酸化物、
とに分けられる。Generally, oxides of glass constituent elements are classified as (11
Network-forming oxides with relatively strong covalent bonding properties, (2) Network-modifying oxides with relatively strong ionic bonding properties and unable to form a solid by themselves, (3) Intermediate between network-forming oxides and network-modifying oxides. Intermediate oxides exhibiting the properties of
ところが、浸漬法による絶縁被膜の形成についてみれば
、Na3等のアルカリイオンの拡散を抑える(ブロック
する)働きの面から中間酸化物はさらに2種類に細分さ
れることを発明者らは見い出した。すなわち、中間酸化
物は原子量が小さいA1、Tiのような元素の屈折率も
相対的に小さい酸化物と、原子量が大きいZr、Ta、
In、Pbのような元素の屈折率が相対的に大きい酸化
物とに分けられる。これらを同期律表に従って分類すれ
ば、第3図に示すガラス構成元素分類表のようになる。However, when looking at the formation of an insulating film by the dipping method, the inventors discovered that intermediate oxides can be further subdivided into two types in terms of their ability to suppress (block) the diffusion of alkali ions such as Na3. In other words, intermediate oxides include oxides with relatively small refractive indexes of elements such as A1 and Ti, which have small atomic weights, and oxides with relatively small refractive indexes, such as Zr, Ta, and Zr, which have large atomic weights.
It is divided into oxides of elements such as In and Pb whose refractive index is relatively high. If these are classified according to the synchronous table, the glass constituent element classification table shown in FIG. 3 will be obtained.
次に、本発明の一実施例について説明する。Next, one embodiment of the present invention will be described.
本発明の一実施例のLCDにおいては、S I Ot
−ZrOt−A1z03−TatOs 52o3の膜
でなる絶縁被膜を浸漬法により形成する。詳しくは、有
機溶剤に可溶なケイ素(Si)の有機金属化合物、ジル
コニウム(Z r)の有機金属化合物、アルミニウム(
AI)の有機金属化合物、タンタル(Ta)の有機金属
化合物およびホウ素(B)の有機金属化合物を育m溶剤
に溶解させて相互に反応させるとともに、望ましくは溶
液の安定化のためにキレート化剤を添加して、生成され
た反応生成物を均一に含有する溶液とし、この溶液にガ
ラス基板を浸漬後、焼成して有機溶剤を除去し、510
z ZrOz A l t O3T a z Os
B t Oxの膜でなる絶縁被膜をガラス基板上に
形成する。In the LCD of one embodiment of the present invention, S I Ot
An insulating film made of -ZrOt-A1z03-TatOs 52o3 is formed by a dipping method. Specifically, organic solvent-soluble organometallic compounds of silicon (Si), organometallic compounds of zirconium (Zr), aluminum (
The organometallic compound of AI), the organometallic compound of tantalum (Ta), and the organometallic compound of boron (B) are dissolved in a growth solvent and reacted with each other, and preferably a chelating agent is added to stabilize the solution. is added to obtain a solution uniformly containing the generated reaction product, and after immersing a glass substrate in this solution, it is fired to remove the organic solvent, and
z ZrOz A l t O3T a z Os
An insulating film made of a B t Ox film is formed on a glass substrate.
上記溶液におけるSi、Zr、Ta、BおよびAtの各
有機金属化合物の成分の割合は、酸化物の重量比で下記
の範囲となるようにすることが好ましい。It is preferable that the proportions of the organometallic compounds of Si, Zr, Ta, B, and At in the above solution be within the following range in terms of weight ratio of oxides.
Stow = 10〜30(重量%)、Zr0t ”
10〜20 (重量%)、TatOs= 20
〜70 (重量%)、BzCh = 2〜10
(重量%)、A l t Os = 1〜5 (重量
%)。Stow = 10-30 (weight%), Zr0t”
10-20 (wt%), TatOs=20
~70 (wt%), BzCh = 2~10
(% by weight), Al t Os = 1-5 (% by weight).
ただし、本発明の目的を達成するならば、上記範囲に限
られるものではない。However, it is not limited to the above range as long as the purpose of the present invention is achieved.
上記Siの有機金属化合物としては、エチルシリケート
(ケイ酸エチルの4量体)テトラメトキシシラン、テト
ラエトキシシラン、ビニルトリス(2−メトキシエトキ
シ)シラン等の有機シラン化合物がよい。As the organometallic compound of Si, organic silane compounds such as ethyl silicate (tetramer of ethyl silicate) tetramethoxysilane, tetraethoxysilane, and vinyltris(2-methoxyethoxy)silane are preferable.
また、上記Zrの有機金属化合物としては、テトラエト
キシジルコニウム、テトライソプロキシジルコニウム(
Zr(OC5Hy)4)、テトラアセチルアセトナート
ジルコニウム(Z r (acac) *)等がよい。In addition, as the organometallic compound of Zr, tetraethoxyzirconium, tetraisoproxyzirconium (
Zr(OC5Hy)4), zirconium tetraacetylacetonate (Zr(acac)*), etc. are preferable.
さらに、上記A1の有機金属化合物としては、トリエト
キシアルミニウム、トリイソプロキシアルミニウム、ト
リーn−ブトキシアルミニウム(AI(OC4Hg)s
) 、トリスアセチルアセトナートアルミニウム等が
よい。Further, as the organometallic compound of A1 above, triethoxyaluminum, triisoproxyaluminum, tri-n-butoxyaluminum (AI(OC4Hg)s
), trisacetylacetonatoaluminum, etc. are preferable.
また、上記Taの有機金属化合物としては、ペンタエト
キシタンタル、ペンタイソプロキシタンタル、ペンタブ
トキシタンタル(Ta(OC4HJS)、ペンタアセチ
ルアセトナートタンタル等がよい。Further, as the organometallic compound of Ta, pentaethoxytantalum, pentaisoproxytantalum, pentabutoxytantalum (Ta(OC4HJS), pentaacetylacetonatotantalum, etc.) are preferable.
さらに、上記Bの化合物としては、トリプトキシボロン
(B (OC4Hq)s)、ホウ酸、トリエトキシボロ
ン等がよい。Furthermore, as the above-mentioned compound B, tryptoxyboron (B (OC4Hq)s), boric acid, triethoxyboron, etc. are preferable.
これら有機金属化合物を溶解させる有機溶剤としては、
メチルエチルケトン(MEK) 、酢酸エチル、エタノ
ール、メタノール等がよい。Organic solvents for dissolving these organometallic compounds include:
Methyl ethyl ketone (MEK), ethyl acetate, ethanol, methanol, etc. are preferable.
また、溶液の安定化のために添加するキレート化剤とし
ては、アセチルアセトン、トリエタノールアミン等がよ
い。Further, as the chelating agent added to stabilize the solution, acetylacetone, triethanolamine, etc. are preferable.
これらを混合して作成された溶液を浸漬液として使用し
、これにガラス基板を浸漬した後に、400℃以上特に
500℃程度の温度で焼成すると、5iO1−ZrO2
A1z03 Taxes Btusの膜でなる絶縁
被膜が形成される。浸漬液中に含有されるSL Zr、
、A1% TaおよびBの量、浸漬液の粘度、ガラス基
板の浸漬液中からの引き上げ速度等を制御することによ
り、膜厚が5000Å以下の絶縁被膜を自由に形成する
ことができる。When a solution prepared by mixing these is used as an immersion liquid, and a glass substrate is immersed in it and then fired at a temperature of 400°C or higher, particularly around 500°C, 5iO1-ZrO2
An insulating film made of A1z03 Taxes Btus is formed. SL Zr contained in the immersion liquid,
, A1% By controlling the amounts of Ta and B, the viscosity of the immersion liquid, the rate of pulling the glass substrate out of the immersion liquid, etc., an insulating film having a thickness of 5000 Å or less can be freely formed.
このようにして形成された絶縁被膜は、透明であること
はもちろん、膜強度が大きいとともに高い絶縁性を有す
る。よって、ガラス基板からのNa”等のアルカリイオ
ンの溶出を完全に防ぎ、信頼性の高いLCDを大量に製
造することを可能とする。The insulating film thus formed is not only transparent but also has high film strength and high insulation properties. Therefore, the elution of alkali ions such as Na'' from the glass substrate is completely prevented, making it possible to mass-produce highly reliable LCDs.
l生■
攪拌器および還流冷却器を備えた3首フラスコを攪拌さ
せながら、窒素ガス(N2)の導入下で、まず、
(1) エタノール+アセチルアセトン、(21AI
(OC4Hダ)3
を順次フラスコに加える。次に、これらを還流させなが
ら煮沸してから、
(3) エチルシリケート
を加える。続いて、
(41Zr(OC1Ht)< 、
(51Z r (acac) #、
(61Ta(OC4H9)S、
(71B (OC4HJs
をそれぞれ
(8) CzHsOH溶液
に溶解した液を反応溶液中にさらに添加する。First, while stirring a three-necked flask equipped with a stirrer and a reflux condenser and introducing nitrogen gas (N2), (1) ethanol + acetylacetone, (21AI
(OC4Hda)3 is sequentially added to the flask. Next, boil these while refluxing, and then (3) add ethyl silicate. Subsequently, (41Zr(OC1Ht)< , (51Z r (acac) #, (61Ta(OC4H9)S, (71B (OC4HJs)) dissolved in (8) CzHsOH solution are further added to the reaction solution.
このようにして作成された溶液の濃度は、酸化物濃度と
して、
Stow −24,6(重量%)、
Zr0t =16.1 (重量%)、Tag’s −
54,6(重量%)、
Btus −3,56(重量%)、
Altos = 1.1 (重量%)
を有する。The concentrations of the solution created in this way are as follows: Stow -24,6 (wt%), Zr0t =16.1 (wt%), Tag's -
54,6 (wt%), Btus -3,56 (wt%), Altos = 1.1 (wt%).
この溶液を浸漬液として用い、同波にガラス基板を浸漬
してから、ガラス基板を毎分60clIの引き上げ速度
で引き上げ、400〜500℃の温度範囲で30〜60
分間焼成した。この結果、ガラス基板上に膜厚が約10
00人の絶縁被膜が形成された。Using this solution as an immersion liquid, the glass substrate was immersed in the same wave, and then the glass substrate was pulled up at a pulling rate of 60 clI per minute.
Bake for a minute. As a result, the film thickness on the glass substrate was approximately 10
00 people's insulation coating was formed.
絶縁被膜2が形成されたガラス基板1上に、さらにスパ
ッタリングにより電極膜3を形成し、バターニング後、
ポリイミド膜をコートしラビングによって配向膜4を形
成すれば、第1図に示したLCD用の電極基板が得られ
る。On the glass substrate 1 on which the insulating film 2 has been formed, an electrode film 3 is further formed by sputtering, and after buttering,
By coating a polyimide film and forming an alignment film 4 by rubbing, the electrode substrate for LCD shown in FIG. 1 can be obtained.
この後、第2図に示すように、配向膜4側を互いに対向
させた2枚の電極基板をスペーサ5を介してギャップが
10μmとなるようにシール剤で貼り合わせ、このギャ
ップに例えばネマティック液晶6を封入し、各電極基板
に偏光板7を貼り付ければ、ツイストネマティック形の
LCDが完成する。Thereafter, as shown in FIG. 2, two electrode substrates with their alignment films 4 facing each other are pasted together with a sealant with a spacer 5 in between so that the gap is 10 μm, and in this gap, for example, a nematic liquid crystal 6 is sealed and a polarizing plate 7 is attached to each electrode substrate, a twisted nematic type LCD is completed.
このようにして製作されたLCDは、SiOg−Z r
Ot A 1 ! Os −T a t Os
B t Osの膜で絶縁被膜を形成したので、Zr、T
aの含有量に応じて絶縁被膜の屈折率を 1.60〜2
.OOの範囲で調整可能であり、このため、電極膜3の
屈折率1.8〜1.9に近づけることができ、非駆動時
に電極パターンが見えにくく、LCDとしての視認性が
よい。The LCD manufactured in this way is made of SiOg-Z r
OtA1! Os −T at Os
Since the insulating film was formed with a B t Os film, Zr, T
The refractive index of the insulating film is 1.60 to 2 depending on the content of a.
.. The refractive index can be adjusted within the range of OO, and therefore the refractive index of the electrode film 3 can be approximated to 1.8 to 1.9, the electrode pattern is difficult to see when not driven, and visibility as an LCD is good.
また、LCDの形成後に端子部に導電コート剤を印刷し
て焼成するなどの高温処理を施しても、アルカリイオン
が溶出してきたかどうかの判定の基準となる駆動時の表
示パターンのくずれ、いわゆるにじみ現象が起こりにく
い。例えば、80℃、90%の耐湿加速試験下において
、にじみ現象の発生時間は、S i Oを単層の場合に
比べて、約30%以上長くなる。したがって、常温常圧
下においては、さらに長寿命のLCDとなる。In addition, even if high-temperature treatment such as printing and baking a conductive coating agent on the terminal area after forming the LCD, the display pattern during driving, which is the standard for determining whether or not alkali ions have eluted, may be distorted, so-called smearing. The phenomenon is unlikely to occur. For example, under an accelerated humidity test at 80° C. and 90%, the time for the bleeding phenomenon to occur is approximately 30% longer than in the case of a single layer of SiO. Therefore, under normal temperature and normal pressure, the LCD has a longer life.
以上説明したように、本発明によれば、二酸化ケイ素と
、二酸化ケイ素以外の網目形成酸化物と、原子量の小さ
い元素の中間酸化物と、原子量の大きい元素の中間酸化
物とを含む膜でなる絶縁被膜が、ガラス基板から液晶へ
のN a ”等のアルカリイオンの溶出を防止し、絶縁
被膜の屈折率を電極膜のそれに近づけ電極パターンを見
えにり<シてLCDの視認性を高めるとともに、LCD
形成後の熱処理による絶縁被膜の劣化を防止するという
効果が得られる。As explained above, according to the present invention, the film is formed of a film containing silicon dioxide, a network-forming oxide other than silicon dioxide, an intermediate oxide of an element with a small atomic weight, and an intermediate oxide of an element with a large atomic weight. The insulating film prevents the elution of alkali ions such as Na'' from the glass substrate to the liquid crystal, and brings the refractive index of the insulating film closer to that of the electrode film, making the electrode pattern visible and improving the visibility of the LCD. , LCD
The effect of preventing deterioration of the insulating film due to heat treatment after formation can be obtained.
第1図は、液晶表示素子における電極基板の構成を示す
断面図、
第2図は、第1図に示した電極基板を用いて構成された
液晶表示素子の断面図、
第3図は、ガラス構成元素分類表である。
図において、
1・・・・・ガラス基板、
2・・・・・絶縁被膜、
3・・・・・電極膜、
4・・・・・配向膜、
5・・・・・スペーサ、
6・・・・・液晶、
7・・・・・偏光板。
第1図
1・ カ゛ラス慕板 2:?祿被A旋3:電も一英
4:配向膜
5:又X−サ 6:液晶
7:傅尤林Figure 1 is a cross-sectional view showing the configuration of an electrode substrate in a liquid crystal display element, Figure 2 is a cross-sectional view of a liquid crystal display element constructed using the electrode substrate shown in Figure 1, and Figure 3 is a glass This is a constituent element classification table. In the figure, 1...Glass substrate, 2...Insulating film, 3...Electrode film, 4...Alignment film, 5...Spacer, 6... ...Liquid crystal, 7...Polarizing plate. Figure 1 1. Glass board 2:? Coverage A turn 3: Denmo Kazuhide
4: Alignment film 5: Also X-sa 6: Liquid crystal 7: Fu Yulin
Claims (1)
化ケイ素と、二酸化ケイ素以外の網目形成酸化物と、原
子量の小さい元素の中間酸化物と、原子量の大きい元素
の中間酸化物とを含む膜で形成した電極基板を備えたこ
とを特徴とする液晶表示素子。The insulating film interposed between the glass substrate and the electrode film contains silicon dioxide, a network-forming oxide other than silicon dioxide, an intermediate oxide of an element with a small atomic weight, and an intermediate oxide of an element with a large atomic weight. A liquid crystal display element characterized by comprising an electrode substrate formed of a film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12757185A JPS61285428A (en) | 1985-06-12 | 1985-06-12 | Liquid crystal display element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12757185A JPS61285428A (en) | 1985-06-12 | 1985-06-12 | Liquid crystal display element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61285428A true JPS61285428A (en) | 1986-12-16 |
Family
ID=14963334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12757185A Pending JPS61285428A (en) | 1985-06-12 | 1985-06-12 | Liquid crystal display element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61285428A (en) |
-
1985
- 1985-06-12 JP JP12757185A patent/JPS61285428A/en active Pending
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