JPS62144337A - Manufacture of electrode - Google Patents
Manufacture of electrodeInfo
- Publication number
- JPS62144337A JPS62144337A JP60286089A JP28608985A JPS62144337A JP S62144337 A JPS62144337 A JP S62144337A JP 60286089 A JP60286089 A JP 60286089A JP 28608985 A JP28608985 A JP 28608985A JP S62144337 A JPS62144337 A JP S62144337A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- lead
- electrodes
- film
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 238000003466 welding Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 229920006267 polyester film Polymers 0.000 abstract description 17
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000005496 eutectics Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229960002089 ferrous chloride Drugs 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000276 potassium ferrocyanide Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOGGUFAVLNCTRS-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] XOGGUFAVLNCTRS-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体基板等の実装方式における電極の製造方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to a method of manufacturing electrodes for mounting on semiconductor substrates and the like.
従来の技術
最近、実装方式としてフィルムキャリヤ実装方式等、多
数本の電極を一度に電気的・機械的に連結する方式が半
導体基板の実装の分野で盛んに利用されるようになって
きた。この実装方式の電極構造は例えば特公昭６０−５
０３３４号公報、特公昭５９−３７８５７号・公報に記
載されている構成が知られている。以下第４図（ａ）の
断面図、第４図ｆｂ）の平面図を参照して、従来の実装
方式の電極構造とその製造方法について説明する。2. Description of the Related Art Recently, mounting methods such as a film carrier mounting method, in which a large number of electrodes are electrically and mechanically connected at once, have come into widespread use in the field of semiconductor substrate mounting. The electrode structure of this mounting method is, for example,
Structures described in Japanese Patent Publication No. 0334 and Japanese Patent Publication No. 59-37857 are known. The conventional mounting type electrode structure and its manufacturing method will be described below with reference to the cross-sectional view of FIG. 4(a) and the plan view of FIG. 4f).
第４図師）において、１はポリイミドフィルム等の基板
、２はＣｕＯ板（膜厚５０μｍ）をラミネートして所定
のパターンを形成したリード電極で、その表面にＳｎ
（膜厚３μｍ）がメッキされている。３は受動、能動素
子が形成された半導体基板で、その表面にＡｕでできた
金属突起電極４が設けられており、この突起電極４と上
記りニド電極２とが溶着されている。In Fig. 4), 1 is a substrate such as a polyimide film, 2 is a lead electrode formed by laminating a CuO plate (film thickness 50 μm) and forming a predetermined pattern.
(film thickness: 3 μm) is plated. Reference numeral 3 denotes a semiconductor substrate on which passive and active elements are formed, and a metal protrusion electrode 4 made of Au is provided on the surface of the semiconductor substrate, and this protrusion electrode 4 and the above-mentioned nido electrode 2 are welded.
第４図（ｌ〕）は第４図（ａ）の矢印の方向からみた従
来例の平面図を示しており、１はポリイミドフィルム等
の基板、２はリード電極、３は半導体基板、・１は金属
突起電極を示しており、金属突起電極４はリード電極２
と溶着されている。このようにしてリード電極２を介し
て、半導体基板３へ電気信号を入出力している。FIG. 4(l) shows a plan view of the conventional example seen from the direction of the arrow in FIG. 4(a), in which 1 is a substrate such as a polyimide film, 2 is a lead electrode, 3 is a semiconductor substrate, . indicates a metal protrusion electrode, and the metal protrusion electrode 4 is the lead electrode 2.
It is welded with. In this way, electrical signals are input and output to and from the semiconductor substrate 3 via the lead electrodes 2.
発明が解決しようとする問題点
しかし、以上のような構成では、リード電極２の幅は、
Ｃｕのラミネートの厚みが５０１ｆｍと厚いために１０
０μｍ以上のピッチでしかつくれないだめに高密度実装
に問題があった。Problems to be Solved by the Invention However, in the above configuration, the width of the lead electrode 2 is
10 because the thickness of the Cu laminate is as thick as 501 fm.
Since it could only be made with a pitch of 0 μm or more, there was a problem with high-density packaging.
またリード電極２は基板１の端より１００μｍ以上離れ
ているため、ボンディングツールでリード電極２と金属
突起電極４とを溶着する際、リード電極２が破損してし
まうことがよく発生していた。Further, since the lead electrode 2 is separated from the edge of the substrate 1 by 100 μm or more, the lead electrode 2 is often damaged when welding the lead electrode 2 and the metal protrusion electrode 4 using a bonding tool.
さらにボンディングツールで溶着する際、リード電極２
に均一に応力が加わらず、リード電極と金属突起電極４
が溶着しないものも発生していた。Furthermore, when welding with a bonding tool, lead electrode 2
Stress is not applied uniformly to the lead electrode and metal protrusion electrode 4.
There were also cases where the welding did not occur.
本発明は王妃問題を解決するもので、機械的破損をリー
ド電極上に発生させることなくリード電極と金属突起電
極とを完全に溶着し、かつ高密度の実装を可能とするも
のである。The present invention solves the queen problem by completely welding lead electrodes and metal protrusion electrodes without causing mechanical damage to the lead electrodes, and enables high-density mounting.
問題点を解決するだめの手段
本発明は、上記目的を達成するもので、透明フィルム上
に所定のパターンで形成されたリード電極と、基板上に
形成された金属突起電極とを接触させ、透明フィルムの
裏面よりレーザー光を照射することによりリード電極と
金属突起電極とを溶着できるようにした電極の製造方法
を提供するものである。Means for Solving the Problems The present invention achieves the above object by bringing lead electrodes formed in a predetermined pattern on a transparent film into contact with metal protrusion electrodes formed on a substrate. The present invention provides a method for manufacturing an electrode in which a lead electrode and a metal protrusion electrode can be welded together by irradiating a laser beam from the back side of the film.
作用
本発明は透明フィルムの裏面よりレーザー光を照射する
ことによりリード電極と金属突起電極とを溶着するため
に、リード電極が機械的圧力により破損したり屈曲する
ことはなく、リード電極と金属突起電極とを完全に溶着
させることができるとともに、微細パターンの形成も可
能で高密度の実装が可能となる。Function The present invention welds the lead electrode and the metal protrusion electrode by irradiating laser light from the back side of the transparent film, so the lead electrode is not damaged or bent by mechanical pressure, and the lead electrode and the metal protrusion are bonded together. Not only can the electrodes be completely welded, but also fine patterns can be formed, allowing high-density packaging.
実施例 以下に本発明の実施例を図面を用いて詳細に説明する。Example Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の一実施例における電極の製造方法を示
す断面図ならびに平面図である。FIG. 1 is a sectional view and a plan view showing a method of manufacturing an electrode in an embodiment of the present invention.
第１図（ａ）において、ポリエステルフィルム２１０表
面に金属層２２が形成されている。この金属層２２はま
ずＮｉの金属薄膜が１〜１０μｍの厚さに形成され、さ
らにその上にＣｕの金属薄膜が１〜１０μｍの厚みでス
パッタ法や蒸着法により形成される。従って金属層２２
の厚みは２〜２０μｍとなる。またポリエステルフィル
ム２１と金属層２２との密着性は１００ Ａｌｉ’／ｃ
ｒＷ以上となり、リード電極として充分な値をもってい
る。第１図（ｂ）で金属層２２の表面に所定の開ロバタ
ーン２４をもつ感光性樹脂２３を表面にコート後、金属
層２２をエソキング除去する。エラキング液としては、
フェロシアン化カリ、塩化第一鉄の水溶液を用いる。そ
の後第１図（ｃ）で示すように金属層２２をメッキ電極
として、Ｓｎを２μｍ程度メッキしてリード電極２５を
形成する。この様にしてできた平面パターンを第１図（
ｄ）で示している。ポリエステルフィルム２１上に４〜
４０μｍピッチでリード電極２５のパターンが形成され
ている。これは金属層２２の膜厚が２〜２０μｍ厚と極
めて薄く作られているからである。次に第１図（ｅｌで
示すように、Ａｔ配線等で金属突起電極２８と電気的に
接続（図示せず）されている能動または受動素子２７を
有する基板２６を準備する。この金属電極２８は第１図
（ｄｉで説明した様に、４〜４０μｍピッチで形成され
ていて、リード電極２５のパターンと合致する様に作ら
れている。ポリエステルフィルム２１上から顕微鏡で観
察しながら、第１図（ｄｉで示しだリード電極２５と金
属突起電極２８との位置合せを行う。次にＹＡＧレーザ
ーのレーザ光３０のビーム径を数μｍにレンズ系２９で
絞って、金属突起電極２８上のリード電極２５に照射す
る。ポリエステルフィルム２１は透明であるのでレーザ
光３０は透過し、リード電極２５に照射される。その際
リード電極２５は光エネルギーが熱エネルギーとなり温
度が３５０℃まで上昇して、リード電極２５のＳｎと金
属突起電極２８のＡｕが共晶反応をおこして溶着する。In FIG. 1(a), a metal layer 22 is formed on the surface of a polyester film 210. This metal layer 22 is first formed by forming a thin metal film of Ni to a thickness of 1 to 10 μm, and then forming a thin metal film of Cu to a thickness of 1 to 10 μm thereon by sputtering or vapor deposition. Therefore, the metal layer 22
The thickness is 2 to 20 μm. Furthermore, the adhesion between the polyester film 21 and the metal layer 22 is 100 Ali'/c.
It is more than rW and has a sufficient value as a lead electrode. In FIG. 1(b), the surface of the metal layer 22 is coated with a photosensitive resin 23 having a predetermined open pattern 24, and then the metal layer 22 is removed by etching. As Ela King liquid,
An aqueous solution of potassium ferrocyanide and ferrous chloride is used. Thereafter, as shown in FIG. 1(c), lead electrodes 25 are formed by plating Sn to a thickness of about 2 μm using the metal layer 22 as a plating electrode. The plane pattern created in this way is shown in Figure 1 (
d). 4~ on the polyester film 21
A pattern of lead electrodes 25 is formed at a pitch of 40 μm. This is because the metal layer 22 has a very thin film thickness of 2 to 20 μm. Next, as shown in FIG. 1 (el), a substrate 26 having an active or passive element 27 electrically connected (not shown) to a metal protruding electrode 28 by At wiring or the like is prepared. are formed at a pitch of 4 to 40 μm, as explained in FIG. The lead electrode 25 and the metal protrusion electrode 28 are aligned as shown in the figure (di).Next, the beam diameter of the laser beam 30 of the YAG laser is focused to several μm using the lens system 29, and the lead electrode 25 and the metal protrusion electrode 28 are aligned. It irradiates the electrode 25. Since the polyester film 21 is transparent, the laser beam 30 passes through and is irradiated to the lead electrode 25. At this time, the light energy becomes thermal energy in the lead electrode 25, and the temperature rises to 350°C. Sn of the lead electrode 25 and Au of the metal protrusion electrode 28 cause a eutectic reaction and are welded together.
各々の・リード電極２５と金属突起電極２８とをレーザ
光源のステージを送シながら溶着した結果を第」図（ｆ
）が示している。３１ばＳｎとＡｕの共晶領域を示す。Figure (f) shows the results of welding each lead electrode 25 and metal protrusion electrode 28 while moving the stage of the laser light source.
) is shown. 31 shows a eutectic region of Sn and Au.
以上本実施例によれば、ポリエステルフィルム２１上に
形成されたリード金属２５が２〜２０μｍ厚みと薄く、
かつフィルムと金属との密着強度も１００１００ｋｖ以
上であるので、リード電極２５として細いパターンがエ
ツチングで形成されると同時に接着剤等を使ってポリエ
ステルフィルムに金属層を貼り合せていないので安価に
かつ強い接着性のあるものができる。さらにポリイシド
フィルムと違ってボリエステルフィルムは透明であるの
で、リード電極２５と金属突起電極２８とのパターン合
せが容易にできると同時にレーザ光線も透過してフィル
ム２１自体を溶融してしまうことなくリード電極２５と
金属突起電極２８が溶着できる。さらに能動または受光
素子２７が容量や抵抗やトランジスタであるのみならず
発光素子まだは受光素子であればポリエステルフィルム
を透過させて光を出したり、また入射してくる光を受光
してセンサーとしての使い方えできる。また従来例で述
べたボンディングツールを用いず、レーザ光によυ非接
触でリード電極２５と金属突起電極２８とを溶着できる
ので、圧力によるようなリード電極２５の破損は生じな
い。またポンディングツールでは均一に圧力が加わらな
い問題もあったが、本実施例ではリード電極２５と金属
突起電極２８がわずかの荷重で接触していれば充分に溶
着できるので、接触不良の問題は発生しない。さらに、
リード電極２５がフィルムキャリヤ実装方式にあるよう
にフィルム端子から突出して形成されておらず、ポリエ
ステルフィルム２１上に強固にリード電極２５の裏面の
全体が接着しているのでリード電極２５が曲げられると
いうような問題も発生しない。As described above, according to this embodiment, the lead metal 25 formed on the polyester film 21 is as thin as 2 to 20 μm thick,
In addition, the adhesion strength between the film and the metal is 100,100 kV or more, so a thin pattern is formed as the lead electrode 25 by etching, and at the same time, since the metal layer is not bonded to the polyester film using an adhesive or the like, it is inexpensive and strong. You can make something with adhesive properties. Furthermore, unlike polyester film, polyester film is transparent, so it is possible to easily match the patterns of lead electrode 25 and metal protrusion electrode 28, and at the same time, the laser beam does not pass through and melt the film 21 itself. The lead electrode 25 and the metal protrusion electrode 28 can be welded together. Furthermore, if the active or light-receiving element 27 is not only a capacitor, a resistor, or a transistor, but also a light-emitting element or a light-receiving element, it can be used as a sensor by transmitting light through a polyester film or by receiving incoming light. I can use it. Further, since the lead electrode 25 and the metal protrusion electrode 28 can be welded without contact with laser light without using the bonding tool described in the conventional example, the lead electrode 25 is not damaged as would be caused by pressure. In addition, there was a problem in which pressure was not applied uniformly with the pounding tool, but in this embodiment, sufficient welding can be achieved as long as the lead electrode 25 and the metal protrusion electrode 28 are in contact with a slight load, so the problem of poor contact is eliminated. Does not occur. moreover,
Unlike the film carrier mounting method, the lead electrode 25 is not formed to protrude from the film terminal, but the entire back surface of the lead electrode 25 is firmly adhered to the polyester film 21, so the lead electrode 25 can be bent. No such problems occur.
以上の説明から明らかなように本実施例によれば、透明
のポリエステルフィルム２１の表面に高密度のパターン
で形成された薄膜のリード電極２５と能動まだは受動素
子２７の形成された基板２６上の金属突起電極２８とを
レーザー光線で溶着することＫより、従来の実装方式で
は得られない前述した様な効果を得ることができる。As is clear from the above description, according to this embodiment, a thin film lead electrode 25 formed in a high-density pattern on the surface of a transparent polyester film 21 and a substrate 26 on which active or passive elements 27 are formed are formed. By welding the metal protruding electrodes 28 with a laser beam, the above-mentioned effects that cannot be obtained with conventional mounting methods can be obtained.
次に本発明の第２の実施例について説明する。Next, a second embodiment of the present invention will be described.
第２図は本発明の第２の実施例における電極構造の断面
図である。第２図において第１図（ｆ）の構成と異なる
点は、基板２６の発光まだは受光素子が形成されている
領域上のポリエステルフィルム２１をあらかじめパンチ
ングまたはエツチング除去しておいて、ポリエステルフ
ィルム２１では吸収されてしまう様な光を発光または受
光できる様にしたものである。FIG. 2 is a sectional view of an electrode structure in a second embodiment of the present invention. The difference in the structure of FIG. 2 from that of FIG. 1(f) is that the polyester film 21 on the area of the substrate 26 where the light emitting and light receiving elements are formed is removed by punching or etching in advance. It is designed to be able to emit or receive light that would otherwise be absorbed.
上記構成において、以下その動作を説明する。The operation of the above configuration will be explained below.
前述した様に受光または発光する光が微弱な場合ポリエ
ステルフィルム２１に吸収される可能性があるのであら
かじめその部分のポリエステルフィルム２１に穴３２を
あけておいたという構成になっている。As mentioned above, if the received or emitted light is weak, there is a possibility that it will be absorbed by the polyester film 21, so holes 32 are previously made in the polyester film 21 in that area.
以上本実施例によれば、第１の実施例で説明した種々の
効果があるのみならず、前述した様に微弱な光ｈνの信
号も発光、受光することができる。As described above, according to this embodiment, not only the various effects described in the first embodiment can be achieved, but also the weak light hv signal can be emitted and received as described above.
次に本発明の第３の実施例について説明する。Next, a third embodiment of the present invention will be described.
第３図は本発明の第３の実施例における電極構造の断面
図である。第３図において、第２図の構成と異なる点は
、ポリエステルフィルム２１の開口部内に光学レンズ３
３を埋め込み、第２の実施例で説明した微弱な光線より
もさらに微弱な光３４を受光または発光して所定の能力
を発揮させようとするものである。FIG. 3 is a sectional view of an electrode structure in a third embodiment of the present invention. 3, the difference from the configuration in FIG. 2 is that an optical lens 3 is provided within the opening of the polyester film 21.
3 is embedded, and a predetermined ability is exerted by receiving or emitting light 34 which is even weaker than the weak light ray explained in the second embodiment.
以上本実施例によれば、第１の実施例で説明した種々の
効果があるのみならず、前述した様に極く微弱な光の信
号も発光まだは受光することができる。As described above, according to this embodiment, not only the various effects described in the first embodiment can be achieved, but also extremely weak light signals can be received as well as emitted as described above.
なお以上の説明ではフィルムはポリエステルフィルムと
した場合について説明したが、加熱するレーザ光の波長
を透過できるもので、パターン合せが容易にできるフィ
ルムなら何を使ってもよい。In the above description, a polyester film was used as the film, but any film can be used as long as it can transmit the wavelength of the heating laser beam and can be easily patterned.
発明の効果
以上のように本発明は透明のフィルム上に所定のパター
ンで形成された薄膜のリード電極と能動または受動素子
の形成された基板上の金属突起電極とをレーザー光によ
り溶着することにより、リード電極とフィルムとの密着
強度を強くできかつ安価に供給されるのみならず、高密
度のリードパターンが形成できる。まだレーザ光で溶着
するため、リード電極に機械的圧力を加えずに溶着でき
るため、リード電極の破損や屈曲が生じない等々の利点
があり、その効果は太きいといえる。Effects of the Invention As described above, the present invention uses a laser beam to weld thin film lead electrodes formed in a predetermined pattern on a transparent film and metal protrusion electrodes on a substrate on which active or passive elements are formed. Not only can the adhesive strength between the lead electrode and the film be strengthened and can be supplied at low cost, but also a high-density lead pattern can be formed. Since welding is performed using laser light, welding can be performed without applying mechanical pressure to the lead electrodes, which has the advantage of not causing breakage or bending of the lead electrodes, and this effect can be said to be significant.
第１図（ａ）〜（ｆ）は本発明の第１の実施例における
、電極の製造方法の工程を示した断面図並びに平面図、
第２図は本発明の第２の実施例における電極構造を示す
断面図、第３図は本発明の第３の実施例における電極構
造を示す断面図、第４図（ａ）、（ｂ）は従来の電極構
造の断面図と平面図である。
２１・・透明フィルム、２２・・金属層、２５・・リー
ド電接、２６・・・基板、２７・・能動″！、たは受動
素子、２８・・・金属突起電極、３０・・レーザ光。
代理人の氏名 弁理士 中 尾 敏 男ほか１名第１図
３各
第１図
。。、 、／３０
２７だ！￥ｌｌす丘・父動渫と
第２図
３２六
′＋ ｈｖ
２７鼠勤号ε１７灯ｐ系か
第３ＩＶｌFIGS. 1(a) to (f) are cross-sectional views and plan views showing the steps of the electrode manufacturing method in the first embodiment of the present invention,
FIG. 2 is a sectional view showing an electrode structure in a second embodiment of the invention, FIG. 3 is a sectional view showing an electrode structure in a third embodiment of the invention, and FIGS. 4(a) and (b) 1 is a cross-sectional view and a plan view of a conventional electrode structure. 21...Transparent film, 22...Metal layer, 25...Lead electrical connection, 26...Substrate, 27...Active''!, or passive element, 28...Metal protrusion electrode, 30...Laser light Name of agent: Patent attorney Toshi Nakao, and one other person Figure 1 Figure 3 Each Figure 1..., , /30 27! ￥llsuoka, Father Doki and Figure 2 326' + hv 27 Rat Work number ε17 light p series or 3rd IVl
Claims (1)
極とを透明フィルムの裏面からレーザ光を照射して溶着
せしむることを特徴とする電極の製造方法。A method for manufacturing an electrode, which comprises welding a metal protruding electrode on the surface of a substrate and a lead electrode on the surface of a transparent film by irradiating laser light from the back side of the transparent film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60286089A JPS62144337A (en) | 1985-12-19 | 1985-12-19 | Manufacture of electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60286089A JPS62144337A (en) | 1985-12-19 | 1985-12-19 | Manufacture of electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62144337A true JPS62144337A (en) | 1987-06-27 |
Family
ID=17699795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60286089A Pending JPS62144337A (en) | 1985-12-19 | 1985-12-19 | Manufacture of electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62144337A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03142294A (en) * | 1989-10-30 | 1991-06-18 | Oki Electric Ind Co Ltd | Manufacture of ic card |
| JPH05109824A (en) * | 1991-10-15 | 1993-04-30 | Omron Corp | Method of mounting flip chip of electronic parts |
-
1985
- 1985-12-19 JP JP60286089A patent/JPS62144337A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03142294A (en) * | 1989-10-30 | 1991-06-18 | Oki Electric Ind Co Ltd | Manufacture of ic card |
| JPH05109824A (en) * | 1991-10-15 | 1993-04-30 | Omron Corp | Method of mounting flip chip of electronic parts |
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