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JPS6173901A - Manufacturing method of metal mirror for infrared detection device - Google Patents

Manufacturing method of metal mirror for infrared detection device

Info

Publication number
JPS6173901A
JPS6173901A JP19754284A JP19754284A JPS6173901A JP S6173901 A JPS6173901 A JP S6173901A JP 19754284 A JP19754284 A JP 19754284A JP 19754284 A JP19754284 A JP 19754284A JP S6173901 A JPS6173901 A JP S6173901A
Authority
JP
Japan
Prior art keywords
film
metal mirror
manufacturing
detection device
infrared detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19754284A
Other languages
Japanese (ja)
Inventor
Tokuji Hashimoto
橋本 篤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19754284A priority Critical patent/JPS6173901A/en
Publication of JPS6173901A publication Critical patent/JPS6173901A/en
Pending legal-status Critical Current

Links

Landscapes

  • Optical Elements Other Than Lenses (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the exfoliation of an SiO film and Al film forming a metallic mirror by forming an Ni film on an Al substrate then laminating and forming successively the Al film and protective film via a Cr film thereon. CONSTITUTION:The Ni film 12 is formed to about 50mu thickness by an electroplating method, etc. onto the Al substrate 11 and thereafter the surface is finished to a specular surface by polishing. The Cr film 13 is deposited and formed to 100-300Angstrom by a vapor deposition method onto the substrate 11. The Al film 14 is deposited and formed to about 2,000Angstrom thickness by vapor deposition thereon and further the SiO film 15 as a surface protective film is deposited and formed to about 1,000Angstrom thickness on said film to manufacture the metallic mirror. The Cr film having the high deposition strength to both metallic films of the Ni film and Al film is thus formed between the Ni film and the Al film and the Al film is formed on the Ni film in the form of sandwiching the Cr film and therefore such an accident as the exfoliation of the Al film formed on the Ni film during the use of the metallic mirror is obviated.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は赤外線撮像装置等の赤外線検知装置に用い、被
対象物より発生する赤外線を走査して赤外線検知素子に
入射させる赤外線検知装置用金属鏡の製造方法の改良に
関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is a metal for an infrared detection device, which is used in an infrared detection device such as an infrared imaging device, and scans infrared rays generated from an object and makes them enter an infrared detection element. Concerning improvements in mirror manufacturing methods.

C従来の技術〕 従来、赤外線の検知装置に用い、測定すべき被対象物よ
り発生する赤外線を走査して赤外線検知素子に入射させ
る金属鏡の製造方法としては、第2図に示すように比重
の小さいアルミニウム(八Ω)の基台1上にニッケル(
Ni)膜2を50μmの厚さで電解メッキ法、または無
電解メッキ法により被着形成する。このNi膜2を被着
した後、Ni1ffを研磨して鏡面仕上げした後、この
Ni膜上に赤外線に対する反射効率の大きいAl2H臭
3を、イオンプレーテング法、またはスパッタ法で被着
形成した後、該A11FJa上に保護膜としての一酸化
シリコン膜(Sin)15ii4をイオンプレーテング
法、またはスパッタ法を用いて被着形成して金属鏡を形
成していた。
C. Prior Art] Conventionally, as a manufacturing method for a metal mirror used in an infrared detection device, which scans the infrared rays generated by the object to be measured and makes the infrared rays enter the infrared detection element, as shown in FIG. A small aluminum (8Ω) base 1 with nickel (
Ni) film 2 is deposited to a thickness of 50 μm by electrolytic plating or electroless plating. After depositing this Ni film 2, polishing the Ni1ff to a mirror finish, and then depositing Al2H odor 3, which has a high reflection efficiency for infrared rays, on this Ni film by ion plating method or sputtering method. A metal mirror was formed by depositing a silicon monoxide film (Sin) 15ii4 as a protective film on the A11FJa using an ion plating method or a sputtering method.

赤外線検知装置に設置された金属鏡は、側車すべき被対
象物の像を水平、および垂直に走査するために6011
z程度の周波数で振動せねばならず、ガラス等の材料で
形成した走査鏡では、その振動で破損しやすく、機械的
強度が不足するため、金属で形成している。
The metal mirror installed in the infrared detection device is 6011 in order to horizontally and vertically scan the image of the object to be sidecarred.
The scanning mirror must vibrate at a frequency of about z, and a scanning mirror made of a material such as glass is easily damaged by the vibration and lacks mechanical strength, so it is made of metal.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところでこのようにして形成した金属鏡は、この金属鏡
を使用した赤外線撮像装置を、宇宙衛星搭載用に用いる
とすると、+60℃〜77°にの温度範囲で、かつ相対
湿度が95%以上の湿度の時、金属鏡を形成するNt1
9J上に形成した〜膜が剥離しないようにせねばならな
い。更にこのような金属鏡は上記した苛酷な温湿度の環
境試験を受けた後、この金属鏡の上にセロテープを貼付
して、それをはがした時、Ni膜上の〜膜が剥離しない
ようにすることが望まれており、従来の方法で形成した
金属鏡では、上記試験に合格できるような、即ちNi膜
上の〜被膜が剥離しないような高信頼度の金属鏡を得る
ことは困難であった。
By the way, if an infrared imaging device using this metal mirror is to be used on a space satellite, the metal mirror formed in this way can be used in a temperature range of +60°C to 77°C and a relative humidity of 95% or more. Nt1 forms a metal mirror when humid
It is necessary to prevent the film formed on 9J from peeling off. Furthermore, after this metal mirror has undergone the above-mentioned severe temperature and humidity environmental test, sellotape is pasted on the metal mirror to prevent the film on the Ni film from peeling off when it is removed. However, with metal mirrors formed using conventional methods, it is difficult to obtain highly reliable metal mirrors that can pass the above tests, that is, the coating on the Ni film will not peel off. Met.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点は、検知すべき被対象物の赤外光を走査する
金属鏡の製造に際し、〜基体上にNi膜を形成後、〜膜
とNi膜に対して被着強度の大きい、容易に剥離し烈い
いクロム(Cr)膜を介してAg膜と保護膜を順次積層
形成する本発明の赤外線検知装置用金属鏡の製造方法に
よって解決される。
The above problem is that when manufacturing a metal mirror that scans infrared light of an object to be detected, after forming a Ni film on a substrate, the film has a high adhesion strength to the Ni film, and is easily formed. This problem is solved by the method of manufacturing a metal mirror for an infrared detection device according to the present invention, in which an Ag film and a protective film are successively laminated via a chromium (Cr) film that is difficult to peel off.

〔作用〕[Effect]

即ち、本発明の赤外線検知装置用金属鏡の製造方法は、
触基体上にNi膜を形成後、該内膜を研暦後、この上に
Ni膜に対して被着強度の大きいCr膜を形成後、該C
rl!a!上にCr膜に対して被着強度の大きいAg膜
を形成後、その上にSiO膜を積層形成して、Ni膜上
に形成した〜膜が剥離し難くして、高信頼度の金属鏡を
得るようにするものである。
That is, the method for manufacturing a metal mirror for an infrared detection device of the present invention is as follows:
After forming a Ni film on the contact substrate, after polishing the inner film, and forming a Cr film with high adhesion strength to the Ni film on top of the inner film, the carbon
rl! a! After forming an Ag film with high adhesion strength to the Cr film on top, a SiO film was laminated on top of the Ag film, which was formed on the Ni film to make it difficult for the film to peel off, resulting in a highly reliable metal mirror. The purpose is to obtain the following.

〔実施例〕〔Example〕

以下、図面を用いて本発明の一実施例につき詳細に説明
する。
Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

第1図に示すように本発明の金属鏡の製造方法は、AU
の基体11上にNi膜12を50μm程度の厚さに電解
メッキ法、または無電解メッキ法で形成した後、この表
面を研磨して鏡面仕上げする。
As shown in FIG. 1, the method for manufacturing a metal mirror of the present invention includes
After forming a Ni film 12 to a thickness of about 50 μm on the substrate 11 by electroplating or electroless plating, the surface is polished to a mirror finish.

次いでこの基体ll上に蒸着方法により厚さ100人〜
300人のCr膜13を被着形成する。次いでこの上に
蒸着によりNJ膜膜種42000人程度0厚さに被着形
成し、更にこの上に蒸着により表面保護膜としてのSi
O膜15を1000人程度0厚さに被着形成して金属鏡
を形成する。
Next, a film with a thickness of 100 mm or more is deposited on this substrate 11 by vapor deposition.
A Cr film 13 of 300 layers is deposited. Next, a NJ film with a thickness of approximately 42,000 layers is formed on this by vapor deposition, and a Si film as a surface protection film is further formed on this by vapor deposition.
A metal mirror is formed by depositing an O film 15 to a thickness of about 1,000 layers.

このようにして形成した本発明の金属鏡によれば、Ni
膜とNJFJとの間にNi膜と89膜の両方の金属膜に
対して被着強度の大きいCr膜を形成し、このCr膜を
挟んだ形で、Ni膜上にAg膜が形成されているので、
Ni膜上に形成されたAI)膜が、金属鏡の使用中に剥
離するような事故もなくなり、高信頼度の赤外線検知装
置用の金属鏡が得られる効果がある。
According to the metal mirror of the present invention formed in this way, Ni
A Cr film with high adhesion strength to both the Ni film and the 89 metal film is formed between the film and the NJFJ, and an Ag film is formed on the Ni film with this Cr film in between. Because there are
Accidents such as the AI film formed on the Ni film peeling off during use of the metal mirror are eliminated, and a highly reliable metal mirror for infrared detection devices can be obtained.

以上述べた実施例に於いては、Ni膜上に〜股を形成す
る際、蒸着方法を用いて形成したが、蒸着方法のみなら
ず、スパッタ法等を用いて金属鏡を形成しても良い。
In the embodiments described above, a vapor deposition method was used to form the crotch on the Ni film, but the metal mirror may be formed using not only a vapor deposition method but also a sputtering method. .

〔発明の効果〕〔Effect of the invention〕

以上述べた本発明の金属鏡の製造方法によれば、赤外線
検知装置の使用中に、金属鏡を形成する5i0151や
All膜が剥離するような事故がなくなり、このような
金B鏡を用いれば高信頼度の赤外線検知装置が得られる
効果がある。
According to the method for manufacturing a metal mirror of the present invention described above, there will be no accidents such as peeling of the 5i0151 or All film forming the metal mirror during use of the infrared detection device, and if such a gold B mirror is used, This has the effect of providing a highly reliable infrared detection device.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の赤外線検知装置用金!!1を製造する
際の工程を示す断面図、 第2図は従来の赤外線検知装置用金属鏡を製造する際の
工程を示す断面図である。 図に於いて、■、11は〜基体、2,12はNi膜、3
,14はへg膜、4,15は5ioFJ、13はCr膜
を示す。
Figure 1 shows the gold for the infrared detection device of the present invention! ! FIG. 2 is a cross-sectional view showing the steps in manufacturing a conventional metal mirror for an infrared detection device. In the figure, ■, 11 is ~substrate, 2, 12 is Ni film, 3
, 14 are Heg films, 4 and 15 are 5ioFJ, and 13 are Cr films.

Claims (1)

【特許請求の範囲】[Claims] 検知すべき被対象物の赤外光を走査する金属鏡の製造に
際し、アルミニウム基体上にニッケル膜を形成後、クロ
ム膜を介してアルミニウム膜と保護膜を順次積層形成す
ることを特徴とする赤外線検知装置用金属鏡の製造方法
When manufacturing a metal mirror that scans infrared light from an object to be detected, an infrared ray method is characterized in that a nickel film is formed on an aluminum base, and then an aluminum film and a protective film are sequentially laminated via a chromium film. A method for manufacturing a metal mirror for a detection device.
JP19754284A 1984-09-19 1984-09-19 Manufacturing method of metal mirror for infrared detection device Pending JPS6173901A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19754284A JPS6173901A (en) 1984-09-19 1984-09-19 Manufacturing method of metal mirror for infrared detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19754284A JPS6173901A (en) 1984-09-19 1984-09-19 Manufacturing method of metal mirror for infrared detection device

Publications (1)

Publication Number Publication Date
JPS6173901A true JPS6173901A (en) 1986-04-16

Family

ID=16376208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19754284A Pending JPS6173901A (en) 1984-09-19 1984-09-19 Manufacturing method of metal mirror for infrared detection device

Country Status (1)

Country Link
JP (1) JPS6173901A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01202684A (en) * 1988-02-08 1989-08-15 Hitachi Medical Corp Radiation detector
JPH03269501A (en) * 1990-03-20 1991-12-02 Hamamatsu Photonics Kk Metallic reflecting mirror and production thereof
WO2002061459A1 (en) * 2001-01-30 2002-08-08 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US6753531B2 (en) 1999-04-09 2004-06-22 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US7034306B2 (en) 1998-06-18 2006-04-25 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US7465932B1 (en) 2007-06-15 2008-12-16 Hamamatsu Photonics K.K. Radiation image conversion panel, scintillator panel, and radiation image sensor
US7468514B1 (en) 2007-06-15 2008-12-23 Hamamatsu Photonics K.K. Radiation image conversion panel, scintillator panel, and radiation image sensor
US7732788B2 (en) 2007-10-23 2010-06-08 Hamamatsu Photonics K.K. Radiation image converting panel, scintillator panel and radiation image sensor
USRE42281E1 (en) 2000-09-11 2011-04-12 Hamamatsu Photonics K.K. Scintillator panel, radiation image sensor and methods of producing them
CN110036316A (en) * 2016-12-14 2019-07-19 三菱电机株式会社 The manufacturing method of infrared laser reflection component, laser oscillator, laser processing device and infrared laser reflection component

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01202684A (en) * 1988-02-08 1989-08-15 Hitachi Medical Corp Radiation detector
JPH03269501A (en) * 1990-03-20 1991-12-02 Hamamatsu Photonics Kk Metallic reflecting mirror and production thereof
US7705315B2 (en) 1998-06-18 2010-04-27 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US7034306B2 (en) 1998-06-18 2006-04-25 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US7408177B2 (en) 1998-06-18 2008-08-05 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US6753531B2 (en) 1999-04-09 2004-06-22 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US6911658B2 (en) 1999-04-09 2005-06-28 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
USRE42281E1 (en) 2000-09-11 2011-04-12 Hamamatsu Photonics K.K. Scintillator panel, radiation image sensor and methods of producing them
WO2002061459A1 (en) * 2001-01-30 2002-08-08 Hamamatsu Photonics K.K. Scintillator panel and radiation image sensor
US7465932B1 (en) 2007-06-15 2008-12-16 Hamamatsu Photonics K.K. Radiation image conversion panel, scintillator panel, and radiation image sensor
US7468514B1 (en) 2007-06-15 2008-12-23 Hamamatsu Photonics K.K. Radiation image conversion panel, scintillator panel, and radiation image sensor
US7812315B2 (en) 2007-06-15 2010-10-12 Hamamatsu Photonics K.K. Radiation image conversion panel, scintillator panel, and radiation image sensor
US7732788B2 (en) 2007-10-23 2010-06-08 Hamamatsu Photonics K.K. Radiation image converting panel, scintillator panel and radiation image sensor
CN110036316A (en) * 2016-12-14 2019-07-19 三菱电机株式会社 The manufacturing method of infrared laser reflection component, laser oscillator, laser processing device and infrared laser reflection component
CN110036316B (en) * 2016-12-14 2021-06-01 三菱电机株式会社 Laser oscillator and laser processing apparatus

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