JPH08139168A - Holding jig for exposure - Google Patents
Holding jig for exposureInfo
- Publication number
- JPH08139168A JPH08139168A JP27682794A JP27682794A JPH08139168A JP H08139168 A JPH08139168 A JP H08139168A JP 27682794 A JP27682794 A JP 27682794A JP 27682794 A JP27682794 A JP 27682794A JP H08139168 A JPH08139168 A JP H08139168A
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- layer
- jig
- thin film
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、液晶表示装置のガラス
基板などの板状をなす透明被処理物を露光時に保持する
露光用保持治具に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure holding jig for holding a plate-shaped transparent processing object such as a glass substrate of a liquid crystal display device during exposure.
【０００２】[0002]
【従来の技術】ガラス基板等に波長３６５ｎｍのｉ線等
の光源を用い、電極、配線等のパターンを焼き付ける露
光工程では、従来からシリコンウエーハと同様の保持治
具を用いている。このような保持治具としては、ＳiＣ
焼結体、ＨＩＰ（Hｏｔ Iｓｏｓｔａｔｉｃ Pｒｅｓ
ｓｉｎｇあるいはPｒｏｃｅｓｓｉｎｇ，熱間静水圧圧
縮法）処理したアルミナ焼結体、ＨＩＰ処理したＴiＣ
焼結体のような比較的光の反射が少ない黒色系セラミッ
ク材料を用いたり、光を乱反射させるために表面を粗く
加工したものを用いている。2. Description of the Related Art Conventionally, a holding jig similar to that of a silicon wafer has been used in an exposure process in which a light source such as an i-line having a wavelength of 365 nm is used on a glass substrate or the like and a pattern such as an electrode or wiring is printed. As such a holding jig, SiC
Sintered body, HIP (Hot Isostatic Pres
Sing or Processing, hot isostatic pressing) treated alumina sintered body, HIP treated TiC
A black ceramic material, such as a sintered body, which reflects relatively little light is used, or a material whose surface is roughened to diffusely reflect light is used.
【０００３】[0003]
【発明が解決しようとする課題】上記した従来の保持治
具では、透明ガラス基板が光を透過させてしまうため、
透過した光が保持治具の表面で反射し、反射した光の一
部が、透明基板上のパターン以外の部分まで到達し、そ
の透明ガラス基板上のパターン以外の部分を露光してし
まうという不具合がある。In the above-mentioned conventional holding jig, since the transparent glass substrate transmits light,
The transmitted light is reflected on the surface of the holding jig, and part of the reflected light reaches parts other than the pattern on the transparent substrate and exposes parts other than the pattern on the transparent glass substrate. There is.
【０００４】前記不具合を解決するべく、保持治具の表
面を粗くして表面の反射を抑えると、反射率は低くなっ
ても保持治具の表面が汚れやすくなり、また保持治具の
据付け精度がラフになる。一方、黒色系セラミック材料
に汚れ防止及び治具の据付け精度向上のため、ラップ加
工等を施すと、表面が鏡面状態となり、光を反射してし
まう。If the surface of the holding jig is roughened to suppress the reflection on the surface in order to solve the above-mentioned problems, the surface of the holding jig is easily soiled even if the reflectance is low, and the installation accuracy of the holding jig is low. Becomes rough. On the other hand, if the black ceramic material is subjected to lapping or the like for the purpose of preventing dirt and improving the accuracy of jig installation, the surface becomes a mirror surface and reflects light.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決すべく本
発明は、透明被処理物を保持する治具の本体としてセラ
ミック焼結体を用い、また被処理物を載置する治具本体
の表面に、表面反射率を低くするためのセラミック薄膜
層を形成した。In order to solve the above problems, the present invention uses a ceramic sintered body as a main body of a jig for holding a transparent object to be processed, and a jig main body for mounting the object to be processed. A ceramic thin film layer for lowering the surface reflectance was formed on the surface.
【０００６】ここで、前記セラミック薄膜層を表面層と
内部層とから構成し、表面層をＡl2Ｏ3、ＳiＯ2等の透
明セラミック膜とし、内部層をＳiＣ、ＴiＣ、ＴiＡlＯ
Ｎのいずれかとし、更に、前記セラミック焼結体をＡl2
Ｏ3、ＳiＣ、Ｓi3Ｎ4、ＳiＡlＯＮのいずれかにするの
が好ましい。Here, the ceramic thin film layer is composed of a surface layer and an internal layer, the surface layer is a transparent ceramic film of Al 2 O 3 , SiO 2, etc., and the internal layer is SiC, TiC, TiAlO.
N, and further, the ceramic sintered body is Al 2
It is preferably any one of O 3 , SiC, Si 3 N 4 and SiAlON.
【０００７】[0007]
【作用】透明被処理物を載置する露光用保持治具本体の
表面に、セラミック薄膜層を形成し、このセラミック薄
膜層の表面層を例えば緻密な透明セラミックス膜で形成
し、また、内部層を光を吸収又は乱反射する層とするこ
とにより、表面の汚れの付着及び治具表面の光の反射を
低く抑えられる。A ceramic thin film layer is formed on the surface of the exposure holding jig main body on which a transparent object to be processed is placed, and the surface layer of this ceramic thin film layer is formed of, for example, a dense transparent ceramic film, and the inner layer is formed. By using a layer that absorbs or diffusely reflects light, it is possible to suppress the adhesion of dirt on the surface and the reflection of light on the jig surface to be low.
【０００８】[0008]
【実施例】以下に本発明の実施例を添付図面に基づいて
説明する。ここで、図１は本発明の実施例に係る真空チ
ャックの断面図、図２は同真空チャックの平面図、図３
は同真空チャックの製造工程を示す断面図、図４乃至図
７は反射率の測定結果を示すグラフである。Embodiments of the present invention will be described below with reference to the accompanying drawings. Here, FIG. 1 is a sectional view of a vacuum chuck according to an embodiment of the present invention, FIG. 2 is a plan view of the vacuum chuck, and FIG.
Is a cross-sectional view showing a manufacturing process of the vacuum chuck, and FIGS. 4 to 7 are graphs showing reflectance measurement results.
【０００９】本発明の実施例に係る真空チャック１は、
図１及び図２に示すように、略円盤状をなし、中央部に
は真空ポンプ等につながる孔２を穿設している。また、
ガラス等の透明被処理物Ｗを載置する表面には前記孔２
につながる溝３が形成されている。この溝３は、格子状
あるいは同心円状のものに限らず、不規則な形状の凹部
であってもよい。The vacuum chuck 1 according to the embodiment of the present invention is
As shown in FIGS. 1 and 2, it has a substantially disc shape, and a hole 2 connected to a vacuum pump or the like is formed in the central portion. Also,
The hole 2 is formed on the surface on which the transparent processing object W such as glass is placed.
Is formed with a groove 3 connected to. The groove 3 is not limited to the lattice shape or the concentric circle shape, and may be an irregularly shaped recess.
【００１０】真空チャック１は、チャック本体４と前記
被処理物Ｗを載置する表面４ａに形成されたセラミック
薄膜層５とからなる。チャック本体４の構成材料として
は、Ａl2Ｏ3、ＳiＣ、Ｓi3Ｎ4、ＳiＡlＯＮ等がある。
セラミック薄膜層５の構成材料としては、Ａl2Ｏ3、Ｓi
Ｏ2、ＳiＣ、ＴiＣ、ＴiＡlＯＮ等がある。セラミック
薄膜層５の構造は、単層から多層膜構造としてもよい。
ただし、前記被処理物を載置する最表面側は透明なＡl2
Ｏ3、ＳiＯ2等のセラミック薄膜が望ましく、更に、そ
の下層には、反射率の低い、吸収するといったＳiＣ、
ＴiＣ、ＴiＡlＯＮ等のセラミックで構成するか、光を
乱反射するように上面を粗面にしておくことが望まし
い。尚、少なくとも被処理物Ｗと接触する部分のセラミ
ック薄膜は緻密な膜とする。The vacuum chuck 1 comprises a chuck body 4 and a ceramic thin film layer 5 formed on a surface 4a on which the object W to be processed is placed. As the constituent material of the chuck body 4, there are Al 2 O 3 , SiC, Si 3 N 4 , SiAlON and the like.
As the constituent material of the ceramic thin film layer 5, Al 2 O 3 and Si are used.
O 2, SiC, TiC, there is TiAlON like. The structure of the ceramic thin film layer 5 may be a single layer to a multilayer film structure.
However, the outermost surface side on which the object to be treated is placed is made of transparent Al 2
A ceramic thin film such as O 3 or SiO 2 is desirable, and the lower layer of the thin film is SiC that has low reflectance or absorbs,
It is desirable to use a ceramic such as TiC or TiAlON, or to make the upper surface rough so as to diffusely reflect light. At least the portion of the ceramic thin film that is in contact with the object W to be processed is a dense film.
【００１１】以上の如き構成の真空チャックの製造方法
を図３に基づいて説明する。図３のステップ（Ａ）に示
すように、先ず、セラミック原料を有機バインダー等と
ともに混練して成形体とし、この成形体を焼成してチャ
ック本体４を得る。焼成されたチャック本体４の上面４
ａを研削する。ステップ（Ｂ）に示すように、このチャ
ック本体４の研削した表面４ａを、所定の部分に窓６ａ
を形成したマスク６で覆い、露出されたチャック本体４
の表面４ａにサンドブラストあるいはショットピーニン
グ等を施す。ステップ（Ｃ）に示すように、前記サンド
ブラストあるいはショットピーニング等を施したところ
は、窓６ａに相当する部分に溝３を形成する。この溝３
は、前記した如く格子状あるいは同心円状のものに限ら
ず、不規則な形状の凹部でもよい。この後、ステップ
（Ｄ）に示すように、チャック本体４の表面４ａと溝３
の表面３ａとにその形状に沿って、セラミック薄膜層５
を形成する。セラミック薄膜層５は、内側に内部層５ａ
を、外側に表面層５ｂを形成しており、２つの層からな
る。セラミック薄膜層５を形成する方法としては、スパ
ッタリング、イオンプレーティング、熱ＣＶＤあるいは
プラズマＣＶＤ等による。セラミック薄膜層５を形成し
た後、ラップ加工によってセラミック薄膜層５の表面を
平滑化する。その後は、常法にしたがって、チャック本
体４の中央部に、溝３と真空ポンプ等へつながる孔２を
穿設して、真空チャック１を完成する。A method of manufacturing the vacuum chuck having the above structure will be described with reference to FIG. As shown in step (A) of FIG. 3, first, a ceramic raw material is kneaded with an organic binder or the like to form a molded body, and the molded body is fired to obtain the chuck body 4. The upper surface 4 of the fired chuck body 4
Grind a. As shown in step (B), the ground surface 4a of the chuck body 4 is provided with a window 6a at a predetermined portion.
Exposed chuck body 4 covered with mask 6 having
Sand blasting or shot peening or the like is applied to the surface 4a of the. As shown in step (C), the groove 3 is formed in a portion corresponding to the window 6a where the sandblasting or the shot peening is performed. This groove 3
Is not limited to the lattice-like or concentric circles as described above, but may be irregularly-shaped recesses. Thereafter, as shown in step (D), the surface 4a of the chuck body 4 and the groove 3 are
The surface 3a of the ceramic thin film layer 5
To form. The ceramic thin film layer 5 has an inner layer 5a on the inner side.
And the surface layer 5b is formed on the outside, and is composed of two layers. As a method for forming the ceramic thin film layer 5, sputtering, ion plating, thermal CVD, plasma CVD, or the like is used. After forming the ceramic thin film layer 5, the surface of the ceramic thin film layer 5 is smoothed by lapping. After that, the groove 3 and the hole 2 connected to the vacuum pump or the like are bored in the central portion of the chuck body 4 according to a conventional method to complete the vacuum chuck 1.
【００１２】材料の組合せで最も良い結果となったの
は、チャック本体４をＡl2Ｏ3とし、セラミック薄膜層
５の内部層５ａをＳiＣとし、表面層５ｂをＡl2Ｏ3とし
た場合であった。The best combination of materials was obtained when the chuck body 4 was Al 2 O 3 , the inner layer 5a of the ceramic thin film layer 5 was SiC, and the surface layer 5b was Al 2 O 3. there were.
【００１３】次に図４及び図５の反射率の測定結果につ
いて説明する。回折格子としてホログラフィック凹面格
子、受光素子としてフォトマル（ＰＭＴ）を用い、波長
領域２００〜９００ｎｍ、測定スポットサイズ１０μｍ
で、コンピューター処理装置を有する反射率測定装置に
より、反射率を測定した。測定面はラップ加工により鏡
面状態とした。Next, the results of measuring the reflectance shown in FIGS. 4 and 5 will be described. A holographic concave grating is used as a diffraction grating, and a photomultiplier (PMT) is used as a light receiving element. The wavelength region is 200 to 900 nm and the measurement spot size is 10 μm.
Then, the reflectance was measured by a reflectance measuring device having a computer processing device. The measurement surface was mirror-finished by lapping.
【００１４】図４はチャック本体４をＡl2Ｏ3焼結体、
セラミック薄膜層５ａをＳiＣとし、セラミック薄膜層
５ｂをＡl2Ｏ3とした実施例の反射率の測定結果を示す
グラフであり、また図５乃至図７は比較例であり、この
うち図５は単結晶シリコンを、図６はＳiＣ焼結体を、
図７はＳi3Ｎ4焼結体を用いた場合の反射率の測定結果
を示すグラフである。尚、露光光源としては波長３６５
ｎｍのｉ線を使用した。FIG. 4 shows a chuck body 4 made of an Al 2 O 3 sintered body,
9 is a graph showing the measurement results of reflectance of an example in which the ceramic thin film layer 5a is SiC and the ceramic thin film layer 5b is Al 2 O 3, and FIGS. 5 to 7 are comparative examples, of which FIG. Single crystal silicon, Fig. 6 shows SiC sintered body,
FIG. 7 is a graph showing the measurement results of reflectance when using a Si 3 N 4 sintered body. The exposure light source has a wavelength of 365
nm i-line was used.
【００１５】図４乃至図７を比較すれば明らかなよう
に、実施例の反射率は、比較例の単結晶シリコン、Ｓi
Ｃ焼結体、Ｓi3Ｎ4焼結体に比べて反射率が１／２に低
減している。As is clear from comparison of FIGS. 4 to 7, the reflectance of the example is the same as that of the single crystal silicon of the comparative example.
The reflectance is reduced to 1/2 as compared with the C sintered body and the Si 3 N 4 sintered body.
【００１６】[0016]
【発明の効果】以上の説明で明らかなように、本発明に
よれば、露光用保持治具の表面反射率が低くなるので、
反射した光の一部が透明被処理物上のパターン以外の部
分まで露光してしまう不具合が低減する。また、表面反
射率を低く抑えながら、表面を鏡面状態とする等の表面
加工が可能なため、保持治具表面の汚れを防止すること
ができる。そして、本発明の露光用保持治具は、セラミ
ック製であるため精密加工が可能で、熱に強く、熱変形
等をすることがない。As is apparent from the above description, according to the present invention, the surface reflectance of the exposure holding jig is low.
The problem that a part of the reflected light exposes a portion other than the pattern on the transparent processing object is reduced. Further, since the surface processing such as making the surface a mirror surface can be performed while suppressing the surface reflectance low, it is possible to prevent the holding jig surface from being soiled. Since the exposure jig of the present invention is made of ceramic, it can be precisely processed, is resistant to heat, and does not undergo thermal deformation.
【図１】本発明の実施例に係る真空チャックの断面図FIG. 1 is a sectional view of a vacuum chuck according to an embodiment of the present invention.
【図２】同真空チャックの平面図FIG. 2 is a plan view of the vacuum chuck.
【図３】同真空チャックの製造工程を示す断面図FIG. 3 is a sectional view showing a manufacturing process of the vacuum chuck.
【図４】本発明の実施例の反射率の測定結果を示すグラ
フFIG. 4 is a graph showing the measurement results of reflectance in Examples of the present invention.
【図５】比較例の反射率の測定結果を示すグラフFIG. 5 is a graph showing the measurement results of reflectance of a comparative example.
【図６】比較例の反射率の測定結果を示すグラフFIG. 6 is a graph showing the measurement results of reflectance of a comparative example.
【図７】比較例の反射率の測定結果を示すグラフFIG. 7 is a graph showing the measurement results of reflectance of a comparative example.
１…真空チャック（露光用保持治具）、４…チャック本
体（治具本体）、４ａ…チャック本体の表面、５…セラ
ミック薄膜層、５ａ…内部層、５ｂ…表面層、Ｗ…透明
被処理物。DESCRIPTION OF SYMBOLS 1 ... Vacuum chuck (exposure holding jig), 4 ... Chuck main body (jig main body), 4a ... Surface of chuck main body, 5 ... Ceramic thin film layer, 5a ... Inner layer, 5b ... Surface layer, W ... Transparent treated Stuff.
フロントページの続き (72)発明者 田中 貴広 福岡県北九州市小倉北区中島２丁目１番１ 号 東陶機器株式会社内 (72)発明者 今井 修 京都市南区久世殿城町575番地 日本ア イ・ティ・エフ株式会社内 (72)発明者 岡崎 泰三 京都市南区久世殿城町575番地 日本ア イ・ティ・エフ株式会社内Front page continued (72) Inventor Takahiro Tanaka 2-1-1 Nakajima, Kokurakita-ku, Kitakyushu City, Fukuoka Prefecture Totoki Equipment Co., Ltd.・ T-F Co., Ltd. (72) Inventor Taizo Okazaki 575, Kuze Tonojo-cho, Minami-ku, Kyoto City Japan IT-F Co., Ltd.
Claims (5)
保持する治具において、前記治具の本体はセラミック焼
結体から構成され、また前記被処理物を載置する治具の
本体表面には表面反射率を低くするためのセラミック薄
膜層が形成されていることを特徴とする露光用保持治
具。1. A jig for holding a plate-shaped transparent object to be processed when it is exposed, wherein a main body of the jig is made of a ceramic sintered body, and a jig for mounting the object to be processed is provided. A holding jig for exposure, characterized in that a ceramic thin film layer for lowering the surface reflectance is formed on the surface of the main body.
て、前記セラミック薄膜層は内部層と表面層からなり、
表面層は透明であることを特徴とする露光用保持治具。2. The exposure jig according to claim 1, wherein the ceramic thin film layer includes an inner layer and a surface layer.
A holding jig for exposure, wherein the surface layer is transparent.
て、前記セラミック薄膜層の内部層はＳiＣ、ＴiＣ、Ｔ
iＡlＯＮのいずれかであり、また表面層はＡl2Ｏ3また
はＳiＯ2であることを特徴とする露光用保持治具。3. The exposure jig according to claim 2, wherein the inner layer of the ceramic thin film layer is SiC, TiC, T.
A holding jig for exposure, which is one of iAlON and whose surface layer is Al 2 O 3 or SiO 2 .
て、前記セラミック焼結体はＡl2Ｏ3、ＳiＣ、Ｓi
3Ｎ4、ＳiＡlＯＮのいずれかであることを特徴とする露
光用保持治具。4. The exposure jig according to claim 1, wherein the ceramic sintered body is made of Al 2 O 3 , SiC, Si.
A holding jig for exposure, which is either 3 N 4 or SiAlON.
て、前記セラミック薄膜層の内部層上面は、粗面である
ことを特徴とする露光用保持治具。5. The exposure jig according to claim 2, wherein the upper surface of the inner layer of the ceramic thin film layer is a rough surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27682794A JPH08139168A (en) | 1994-11-10 | 1994-11-10 | Holding jig for exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27682794A JPH08139168A (en) | 1994-11-10 | 1994-11-10 | Holding jig for exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08139168A true JPH08139168A (en) | 1996-05-31 |
Family
ID=17574961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27682794A Pending JPH08139168A (en) | 1994-11-10 | 1994-11-10 | Holding jig for exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08139168A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005332910A (en) * | 2004-05-19 | 2005-12-02 | Hitachi High-Tech Electronics Engineering Co Ltd | Substrate chuck and display panel substrate manufacturing method |
| JP2006064992A (en) * | 2004-08-26 | 2006-03-09 | Kyocera Corp | Liquid crystal substrate holder and manufacturing method thereof |
| US7091146B2 (en) | 2002-09-12 | 2006-08-15 | Sodick Co., Ltd. | Enhanced ceramic material for precision alignment mechanism |
| WO2010095719A1 (en) * | 2009-02-23 | 2010-08-26 | 株式会社ソディック | Colored ceramic vacuum chuck and manufacturing method thereof |
| WO2014084060A1 (en) * | 2012-11-28 | 2014-06-05 | 京セラ株式会社 | Placement member and method for manufacturing same |
| JP2015101496A (en) * | 2013-11-22 | 2015-06-04 | 京セラ株式会社 | Holding member |
| JP2017083855A (en) * | 2012-08-28 | 2017-05-18 | 株式会社ニコン | Substrate supporting device and pattern forming device |
-
1994
- 1994-11-10 JP JP27682794A patent/JPH08139168A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7091146B2 (en) | 2002-09-12 | 2006-08-15 | Sodick Co., Ltd. | Enhanced ceramic material for precision alignment mechanism |
| JP2005332910A (en) * | 2004-05-19 | 2005-12-02 | Hitachi High-Tech Electronics Engineering Co Ltd | Substrate chuck and display panel substrate manufacturing method |
| JP2006064992A (en) * | 2004-08-26 | 2006-03-09 | Kyocera Corp | Liquid crystal substrate holder and manufacturing method thereof |
| JP4502746B2 (en) * | 2004-08-26 | 2010-07-14 | 京セラ株式会社 | Liquid crystal substrate holder and manufacturing method thereof |
| WO2010095719A1 (en) * | 2009-02-23 | 2010-08-26 | 株式会社ソディック | Colored ceramic vacuum chuck and manufacturing method thereof |
| JP4761334B2 (en) * | 2009-02-23 | 2011-08-31 | 株式会社ソディック | Colored ceramic vacuum chuck and manufacturing method thereof |
| CN102308379A (en) * | 2009-02-23 | 2012-01-04 | 株式会社沙迪克 | Colored ceramic vacuum chuck and manufacturing method thereof |
| US8899564B2 (en) | 2009-02-23 | 2014-12-02 | Sodick Co., Ltd. | Colored ceramic vacuum chuck and manufacturing method thereof |
| JP2017083855A (en) * | 2012-08-28 | 2017-05-18 | 株式会社ニコン | Substrate supporting device and pattern forming device |
| WO2014084060A1 (en) * | 2012-11-28 | 2014-06-05 | 京セラ株式会社 | Placement member and method for manufacturing same |
| US10937684B2 (en) | 2012-11-28 | 2021-03-02 | Kyocera Corporation | Placement member and method of manufacturing the same |
| JP2015101496A (en) * | 2013-11-22 | 2015-06-04 | 京セラ株式会社 | Holding member |
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