JPS6167081A - Solid display - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

Detailed Description of the Invention "Field of Application of the Invention" The present invention provides a full-color display panel, preferably a liquid crystal display panel.
The present invention relates to a semiconductor device for solidifying display parts of word processors, televisions, etc.

``Prior Art'' For full-color solid-state display panels, a system in which each picture element is controlled independently is effective for large-area displays. In a panel using such active elements, each active element includes one control element, such as an insulated gate field effect semiconductor device (IGFi) or a nonlinear element, and a corresponding liquid crystal element connected in series. A matrix configuration (hereinafter referred to as 1:1 active matrix type or 1:1 type) is known, in which one pixel is configured from 1:1 and connected to X and X wiring (hereinafter referred to as 1:1 active matrix type or 1:1 type).

``Problems to be Solved by the Invention'' However, in a display panel using this l:1 correspondence force formula, the number of elements in the panel is equal to the number of pixels; for example, in a 480 x 480 pixel full color display, The number of pixels required is 230.400. This 2
It is technically extremely difficult to fill more than 00,000 pixels with only non-defective products. Therefore, it is expected that the manufacturing yield will be low.

In particular, in a display panel using IGF as a control element, the manufacturing process requires as many as 6 to 8 photomasks. It is expected that the yield will be even lower.

"Means for Solving the Problem" In order to solve this problem, the present invention has a control element for controlling an active element that connects the other liquid crystal electrode side, which is not the connected liquid crystal electrode side, instead of one electrode. This method is divided into three electrodes, each of which corresponds to R (red), G (green), and B (blue) (hereinafter simply referred to as RGB). That is, we propose a 1:3 active matrix method (also referred to as 1:3 correspondence method 2) in which one electrode corresponds to three electrodes. In this way, even if the number of pixels in a full-color display device is, for example, 480 x 480, the actual number of pixels on the substrate side, which requires a precise mask process to create the IGF or non-linear element required for the manufacturing process, can be reduced. The number of elements can be 173.

In addition to using such a 1:3 correspondence equation, the present invention uses a nonlinear element as a semiconductor control element that treats RGB as one element. The structure of this nonlinear element has ohmic contact with each of the pair of electrodes, and the semiconductor has a composite diode that has reverse rectification characteristics.A typical example is an N-type semiconductor-1 type semiconductor. (hereinafter referred to as "intrinsic" or "substantially intrinsic") semiconductor - NIN structure provided by stacking N-type semiconductors, that is, Nl junction and IN
Semiconductors with NIN junctions electrically connected in opposite directions and integrated as a semiconductor, as well as its variations NN-N, MP-N, PIP, PP-P, P
It is a composite diode having an NP, NIPIN or PINIP junction structure.

Such a composite diode has diode characteristics opposite to each other, and its build-in (rise) voltage (
The threshold value (N) can be determined by the concentration of the N-type semiconductor and the summer semiconductor in the junction, or the concentration of P or N-type impurities added to the summer semiconductor. Therefore, by controlling the manufacturing process, the desired value can be obtained. The device may have a threshold voltage.

The present invention can be completed by simply aligning one mask in which the outer periphery of such a composite diode and the electrodes/leads in the X direction (or electrodes/leads in the Y direction) forming the matrix 7 have approximately the same shape. Therefore, only two masks are required to form the composite diode connected to one electrode (first electrode) of the liquid crystal display provided on one substrate and the X wiring connected to it. can. Representative examples of this structure are shown in FIGS. 2 and 3.

For this reason, it is easy to control the AC bias of a solid-state display element, such as a liquid crystal, by controlling the levels of the other RGB electrode (fourth electrode) leads of the liquid crystal (gradation control is also possible). It has the following characteristics.

"Operation" The present invention divides the other electrode of the liquid crystal into three parts, and passes red (referred to as R), green (referred to as G), and blue (referred to as B) filters to each electrode to adjust the level. A voltage can be applied independently to each other. Therefore, R,G,
It has the feature of being able to perform gradation for B.

In addition, to create this pattern, the number of masks required for the process on the substrate on which the nonlinear element is provided is two (
In other words, one mask on the other substrate side may be used (three masks in total).

The present invention will be explained below according to examples.

"Example 1" FIG. 1 shows an equivalent circuit for a solid state display device of the present invention.

In the drawing, the active element, i.e., the pixel (1) is connected to the liquid crystal (
6) is connected to one electrode (1) (first electrode). The element (3) is connected to the address line (11) of the X wiring by a third electrode (3). On the other hand, the fourth part of the liquid crystal (6)
The electrode (4) is divided into three parts, each with Y configuration (
21) Notator [(13), (14), (15)
There are two connected sites. Furthermore, filters (20) are provided as R(7), G(8), and B(9) corresponding to these three divided electrodes. This X wiring is connected to the same insulating substrate, typically a glass substrate (Fig. 3 (B), (C), (D
) in (25)), and the other fourth electrode ((13) in FIG. 4(B),
(14), (15)') are other opposed translucent insulating substrates, typically glass substrates (Fig. 4(B), (D
) is provided on the (26) ) side.

Such pixels are arranged in a matrix, and in the drawing, 2
2 x 3 (R, G, B). This is the same technical idea for a scaled-up display device, for example (480 x 480 pixels, 480 x 160 x 3 (R, G, B)).

In order to further embody the present invention, FIG. 2 shows an example of the structure and characteristics of the nonlinear element shown in FIG. 1.

This FIG. 2 will be abbreviated below.

FIG. 2(A) shows a longitudinal cross-sectional view of an actual device structure.

That is, in FIG. 2 (^), a second electrode (2) consisting of a transparent conductive film (16) on a glass substrate (25) and a light-shielding chrome mask (17), N(22)I(23)N (24
) NIN junction type composite diode (
5), consisting of a light-shielding chrome mask (1B) and a third electrode (3) made of an aluminum conductor (19),
In the case of this NUN structure, its equivalent symbol is shown in FIG. 2(B), and is the most typical one.

Furthermore, a small amount of N-type impurity is added to this one layer.
, NN-N as P- with a small amount of P-type impurity added,
It is effective to control the threshold as NP-N. Also, by adding some C, N, 0 to this I, P- or N-, 5ixC+-x (0<X<1), 5iJ4-
It is effective to vary the diode threshold voltage as x(0<X<4)+5i01-x(0<X<2).

Alternatively, a composite diode (2') may be formed in which the N-type semiconductors (12) and (14) are P-type semiconductors and PIP, PP-P, or PN-P junctions are used.

As for the composite diode characteristics in FIG. 2, as shown in FIG. 2(C), it was possible to obtain V-1 characteristics that are approximately symmetrical with respect to the origin of (12) and (12').

"Example 2" This example is shown in Fig. 3, its plan view (A) and longitudinal sectional view (
B), (C), and (D) are shown.

This drawing shows an embodiment of the present invention in which pixel (1) at address (1.1) in the circuit of FIG. 1 is patterned.

Further, FIGS. 3(B) and 3(C) show longitudinal sectional views taken along B-8' and AA' in FIG. 3(A), respectively. In addition,
FIG. 3(D) shows a longitudinal sectional view taken along line c-c' in (8).

In the drawings, non-alkali glass (25) was used as the light-transmitting insulating substrate. On this upper surface, a conductive film of ITO or tin oxide is applied to a thickness of 0.1 to 0.5 μm by sputtering or electron beam evaporation, and a light-shielding chromium film is further applied to this upper surface to a thickness of 500 to 2,500 μm. Laminated layers were formed. Thereafter, this conductive film is patterned using a first mask (2) to form an electrode.

That is, the first electrode (1) for the liquid crystal, the lower electrode (2) (second electrode) for the composite diode (5) extending from this, that is, the transparent conductive film (16) and the shielding electrode ( A second electrode (2) consisting of 17) was formed by removing unnecessary portions using the first mask (3).

Thereafter, a nonlinear semiconductor element such as a composite diode made of a non-single-crystal semiconductor doped with hydrogen or a balogen element having an NIN structure was formed on the entire surface thereof by a known plasma vapor phase reaction method or energetic phase method. That is, the N-type semiconductor (22) is diluted with silane by 3 to 5 times with hydrogen, and 13
．． 20 by performing high frequency glow discharge of 56MHz.
A non-single crystal semiconductor having a microcrystalline structure is formed on a surface of a substrate maintained at 0 to 250°C. Its electrical conductivity is lo-1~102(Ωcm)-' and 300~10
The thickness was 0.00 people. Furthermore, silane alone or hydrogen and silicon fluoride (SiF4゜1ISiF1.HzSih or 5ih) are introduced into the plasma reactor to cause a plasma reaction, and a non-single crystal to which hydrogen or halogen elements are added is formed. A semiconductor (23) was formed by stacking it on an N-type semiconductor to a thickness of 0.3 to 1 μm. Furthermore, the same N-type semiconductor (24) was again made into a microcrystalline structure with a crystalline structure of 300 to 1000
They were laminated to a human thickness to form an NIN bond. In this ■-type semiconductor, boron or phosphorus is added to BJb/5iHn, Pth
/5i14" 10-h~10ze, P
- or N- conductivity type.

In this way, NP-N and NN-N can be obtained.

After that, apply a light-shielding chrome (500 to 1500
person') (18), and aluminum (0,1~
2μ) (19) was laminated by electron beam evaporation or sputtering. Furthermore, after this, lead in the X direction (11
) and a region to be provided as a composite diode (5), the other portions were removed by photoetching using a second photomask (2).

That is, as shown in FIG. 3, aluminum (9) and (11) were plasma etched using CCl4 using a resist. Furthermore, chromium (18), semiconductor (3),
is removed by etching, and the outer periphery of the third electrode (the third
(D) (40)) and the outer periphery of the semiconductor below it (Fig. 3 (D) (41)) are approximately the same shape, and the chromium (17) on the lower side is also Unnecessary parts were removed to give the same shape as the outer periphery of the third electrode. Thus, with the second mask ■ that performs one superimposition process,
The lead (11) in the X direction, the third electrode (3), and the semiconductor for a composite diode (5) which is a nonlinear element located below the lead (11) could be made to have approximately the same shape. Furthermore, the composite diode (5) and its lower electrode (2) could be formed to have the same shape. In addition, this composite diode has chromium (17) and (1B) for light shielding on both its top and bottom surfaces.
It was possible to cover the diode without using any extra steps, and it was possible to make it have composite diode characteristics.

Furthermore, color filters were formed in stripes of R (7), G (8), and B (9) by dyeing on the inside of the other opposing translucent substrate. Furthermore, a pansivation film (31) was formed of polyimide, and in addition, a transparent conductive film of ITO or SnO□ was formed by sputtering. Further, this conductive film was patterned by another patterning process (2) to form wiring in the Y direction, as shown in FIGS. 3(B) and 3(C).

As another method for forming the electrode on the side where the filter is formed, electrodeposition may be used. In such a case, ITO or 5nOz is formed on the glass substrate by sputtering. After this, patterning is carried out and the electrode leads (13), (
14) , (15) are formed. Furthermore, corresponding to each, R (7) is placed on the electrode (13) and G (8) is placed on the electrode (14).
), B (9) is formed on the electrode (15) by electrodeposition. Thereafter, polyimide such as PIQ was coated to form a protective film, and the PIQ was subjected to an orientation treatment. Such an electrodeposition method may also be used.

From the above, it is only necessary to use three types of masks to form one active pixel, and in particular, in this case, there is an advantage that only two overlapping masks (one time) are required.

As a subsequent step, a display panel was manufactured by bonding a single crystal IC to a substrate with peripheral circuits (28) and (29) shown in FIG. 1 in a hybrid configuration.

Furthermore, another substrate (26) provided with electrodes was placed on the opposing color filter and separated by a width of about 6 to 10 microns, and after the gap was evacuated, a known liquid crystal (10) such as a TN liquid crystal was sealed.

In this way, by dividing the counter electrode (fourth electrode) side into three parts and applying a 1:3 correspondence force type, it became possible to increase the density of the active elements to 173 compared to the conventional method.

"Effects" As shown above, each of R, G, and B has one effect.
Rather than driving with corresponding active elements, R, G, and B are grouped together and compared with one other corresponding liquid crystal electrode. Therefore, the number of elements is reduced to 1/3 of that of the conventional full-color one-way system, and as a result, the structure is extremely effective in improving manufacturing yield.

Furthermore, when using the nonlinear element of the present invention, since the composite diode and the electrode lead (wiring in the X direction) are integrated, patterning can be performed with an extremely small number of masks (3 masks) (overlapping once). , and the manufacturing yield can be improved.

It is an alternating current drive system, and in particular, the threshold value of the nonlinear element can be controlled by the process conditions during stacking of semiconductor layers using a gas phase reaction method, making it easy to control gradation.

After the composite diode of the present invention is formed, intense light annealing is performed using a pulsed YAG laser or the like having a wavelength of 1.06 μ including the diode portion, so that the composite diode may be made into a polycrystalline semiconductor doped with hydrogen or a halogen element.

In the present invention, the fourth electrode of the liquid crystal has three electrodes corresponding to RGB.
It was divided. However, this division can be used for other purposes by dividing into a plurality of divisions, for example, 2 to 6 divisions.

[Brief explanation of drawings]

FIG. 1 shows a circuit diagram of a liquid crystal display panel of the present invention. FIG. 2 is a longitudinal section (A) of the composite diode of the present invention. Its symbol (B) and characteristics (C) are shown. FIG. 3 shows the structure of one pixel of the display panel of the present invention.

Claims (1)

[Claims] 1. In a solid-state display device having an active matrix configuration in which a liquid crystal is provided between two opposing substrates,
One electrode of each element is provided with a control element connected to wiring in the X or Y direction, and the other electrode is divided into a plurality of parts, each connected to a lead in the Y or X direction. A solid-state display device characterized in that: 2. A solid-state display device according to claim 1, characterized in that the other electrode is divided into three parts and provided corresponding to red, green, and blue filters, respectively. 3. In claim 1, a conductive film provided on an insulating substrate serves as one first electrode of a display element and a second electrode for a nonlinear element constituting a control element extending from the electrode. a lead extending in the X direction at a distance above the first electrode and crossing the second electrode; and a lead on the element whose periphery has approximately the same shape as the element. 3
What is claimed is: 1. A solid-state display device comprising: an electrode and the lead.