JPS6157701B2 - - Google Patents
Info
- Publication number
- JPS6157701B2 JPS6157701B2 JP1368279A JP1368279A JPS6157701B2 JP S6157701 B2 JPS6157701 B2 JP S6157701B2 JP 1368279 A JP1368279 A JP 1368279A JP 1368279 A JP1368279 A JP 1368279A JP S6157701 B2 JPS6157701 B2 JP S6157701B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- single crystal
- light
- crystal wafer
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Dicing (AREA)
- Control Of Position Or Direction (AREA)
Description
【発明の詳細な説明】
この発明は、単結晶ウエハーの基準カツト面に
光を入射し、その反射光を利用して単結晶ウエハ
ーの結晶方位とスクライブの方向とを合わせ、簡
単かつ正確にスクライブできるようにした単結晶
ウエハースクライブ装置に関する。Detailed Description of the Invention The present invention allows light to be incident on the reference cut surface of a single crystal wafer, and the reflected light is used to align the crystal orientation of the single crystal wafer with the direction of scribing, thereby easily and accurately scribing the wafer. This invention relates to a single-crystal wafer scribing device that enables wafer scribing.
一般に、ウエハースクライブ装置は、ウエハー
を多数のチツプ(ペレツト)に分割する装置であ
り、半導体結晶や表面弾性波フイルタ基板の材料
としての圧電性誘電体結晶等の単結晶ウエハーを
チツプに分割する場合、まず、単結晶ウエハーの
結晶方位を劈開またはX線回析等により求め、カ
ツターで切断することにより基準面を出し、この
基準面と単結晶ウエハーの表面との交線に、目測
によりスクライブカツターの切断方向に合わせ、
スクライブしている。したがつて、スクライブの
方向を精度よく求めることが困難であり、劈開性
のある単結晶ウエハーをスクライブする場合に、
劈開方向からずれてスクライブしてしまう不都合
が生じる。また、精度をよくするために、基準面
をかなり大きく切り落す必要があり、試料が無駄
になり、不経済である。 Generally, a wafer scribing device is a device that divides a wafer into a large number of chips (pellets), and is used when dividing a single crystal wafer such as a semiconductor crystal or a piezoelectric dielectric crystal used as a material for a surface acoustic wave filter substrate into chips. First, the crystal orientation of the single-crystal wafer is determined by cleavage or X-ray diffraction, etc., and a reference plane is obtained by cutting it with a cutter. A scribe cut is visually measured at the intersection of this reference plane and the surface of the single-crystal wafer. according to the cutting direction of the tar,
I'm scribing. Therefore, it is difficult to accurately determine the direction of scribing, and when scribing a single crystal wafer with cleavability,
There is an inconvenience that the scribe is deviated from the cleavage direction. Furthermore, in order to improve accuracy, it is necessary to cut off the reference surface considerably, which wastes the sample and is uneconomical.
この発明は、前記従来の問題点に留意し、簡単
かつ正確に単結晶ウエハーの結晶方位とスクライ
ブする方向とを一致させるようにしたものであ
り、つぎにこの発明を、その1実施例を示した図
面とともに詳細に説明する。 This invention takes into account the above-mentioned conventional problems and makes it possible to easily and accurately match the crystal orientation of a single crystal wafer with the scribing direction. Next, one embodiment of this invention will be described. This will be explained in detail with reference to the accompanying drawings.
図において、1は装置本体、2は装置本体1に
回転自在に装設されたウエハー保持台であり、ウ
エハーを保持する中央部上面に多数の微細孔が設
けられている。3はウエハー保持台2上に保持さ
れた単結晶ウエハーであり、例えば、Ge,Si等
の半導体単結晶ウエハーまたはLiNbO3等の表面
弾性波フイルタの基板材料としての圧電性誘電体
単結晶ウエハーである。4は単結晶ウエハー3を
劈開等により切断してなる基準カツト面、5は単
結晶ウエハー3の上方に鉛直に設けられたスクラ
イブカツター、6は基準カツト面4に光を入射す
るためのハロゲンランプまたはArレーザー光源
からなる光源、7は光源6からの光を制限して通
すスリツト、8はスリツト7からの光の入射孔9
を有しウエハー保持台2の近傍に該保持台2の回
転中心に対向して設けられたカバーであり、例え
ば散乱光を防ぐために内面を黒塗りした半円筒状
のアルミニユーム等からなる。10は入射孔9か
らの光を反射してウエハー保持台2の上面に平行
で該保持台2の回転中心に指向させ単結晶ウエハ
ー3の基準カツト面4に入射するハーフミラー、
11,12はカバー8の保持台2側の開口部近く
においてハーフミラー10からの反射光の両側に
所定の間隔で対置された2個の光検知器であり、
例えばフオトトランジスタである。13はハーフ
ミラーの保持台2との反対側に設けられ基準カツ
ト面4からの反射光を制限して通すスリツト、1
4はスリツト13のハーフミラー10との反対側
に設けられ両光検知器11,12の中間、すなわ
ちハーフミラー10からの反射光の光路の延長線
上に位置したフオトトランジスタ、光電増倍管等
の高感度光検知器、15は高感度光検知器14に
接続された表示用のメータ、16は両光検知器1
1,12からの検知信号により動作するモータの
制御回路、17はウエハー保持台2を回転させる
パルスモータ等のモータ、18はウエハー保持台
2の回転操作部であり、例えばねじ等からなる。
なお、前記スクライブカツター5によるスクライ
ブ方向は、ハーフミラー10からの反射光の入射
方向に直交する方向とされている。 In the figure, 1 is an apparatus main body, and 2 is a wafer holding stand rotatably mounted on the apparatus main body 1, and a large number of fine holes are provided in the upper surface of the central part for holding the wafer. 3 is a single crystal wafer held on the wafer holder 2; for example, a semiconductor single crystal wafer such as Ge or Si, or a piezoelectric dielectric single crystal wafer such as LiNbO 3 as a substrate material of a surface acoustic wave filter. be. 4 is a reference cut surface obtained by cutting the single crystal wafer 3 by cleaving or the like; 5 is a scribe cutter installed vertically above the single crystal wafer 3; and 6 is a halogen for making light incident on the reference cut surface 4. A light source consisting of a lamp or an Ar laser light source; 7 is a slit that restricts and passes the light from the light source 6; 8 is an incident hole 9 for the light from the slit 7;
This cover is provided near the wafer holding table 2 and facing the center of rotation of the holding table 2, and is made of, for example, semi-cylindrical aluminum whose inner surface is painted black to prevent scattered light. 10 is a half mirror that reflects the light from the incident hole 9 and directs it parallel to the upper surface of the wafer holder 2 toward the center of rotation of the holder 2 so as to be incident on the reference cut surface 4 of the single-crystal wafer 3;
Reference numerals 11 and 12 are two photodetectors placed opposite each other at a predetermined interval on both sides of the reflected light from the half mirror 10 near the opening of the cover 8 on the side of the holding table 2;
For example, a phototransistor. Reference numeral 13 denotes a slit provided on the opposite side of the half mirror from the holding base 2 to limit and pass reflected light from the reference cut surface 4;
Reference numeral 4 denotes a phototransistor, a photomultiplier tube, etc., which is provided on the opposite side of the slit 13 from the half mirror 10 and located between the two photodetectors 11 and 12, that is, on the extension of the optical path of the reflected light from the half mirror 10. High-sensitivity photodetector, 15 is a display meter connected to high-sensitivity photodetector 14, 16 is both photodetector 1
17 is a motor such as a pulse motor that rotates the wafer holding table 2; and 18 is a rotating operation section for the wafer holding table 2, which is made of, for example, a screw.
The direction of scribing by the scribe cutter 5 is perpendicular to the direction of incidence of the reflected light from the half mirror 10.
つぎに、前記実施例の動作について説明する。
まず、単結晶ウエハー3をウエハー保持台2の上
に載置し、ウエハー保持台2の下部に設けられて
いる排気装置(図示せず)を駆動することによ
り、ウエハー保持台2の多数の微細孔を通して単
結晶ウエハー3をウエハー保持台2の所定の位置
に吸引し、スクライブカツター5によりスクライ
ブできるように保持する。 Next, the operation of the embodiment will be explained.
First, a single crystal wafer 3 is placed on the wafer holder 2, and by driving an exhaust device (not shown) provided at the bottom of the wafer holder 2, a large number of fine particles on the wafer holder 2 are removed. The single crystal wafer 3 is sucked into a predetermined position on the wafer holding table 2 through the hole, and is held by the scribe cutter 5 so that it can be scribed.
そして、光源6から発した光がスリツト7およ
びカバー8の入射孔9を通つてハーフミラー10
で反射され、このハーフミラー10で反射された
光が、単結晶ウエハー3の基準カツト面4に入射
する。ここで単結晶ウエハー3は、前述のウエハ
ー保持台2に載置する際に、目測により基準カツ
ト面4がスクライブカツター5によりスクライブ
する方向に対しほぼ平行になるようセツトされて
いるが、破線で示すように、基準カツト面4がス
クライブカツター5でスクライブする方向に対し
平行でない場合、言い換えると基準カツト面4が
入射光に対し直角に位置していない場合は、ハー
フミラー10からの入射光が基準カツト面4で反
射し、この反射光が光検知器11または12に照
射されて検知される。そして、受光した光検知器
11または12から検知信号が出力されて制御回
路16が動作し、モータ17が駆動してウエハー
保持台2が回転される。このモータ17の正方向
または逆方向への回転は、両光検知器11,12
からの検知信号がなくなるまで続けられ、基準カ
ツト面4の反射光が両光検知器11,12間に導
かれる。 Then, the light emitted from the light source 6 passes through the slit 7 and the entrance hole 9 of the cover 8 to the half mirror 10.
The light reflected by the half mirror 10 is incident on the reference cut surface 4 of the single crystal wafer 3. Here, when the single crystal wafer 3 is placed on the wafer holding table 2 mentioned above, it is set by visual measurement so that the reference cut surface 4 is almost parallel to the direction in which the scribe cutter 5 scribes, but the broken line As shown in FIG. The light is reflected by the reference cut surface 4, and this reflected light is irradiated onto a photodetector 11 or 12 and detected. Then, a detection signal is output from the photodetector 11 or 12 that receives the light, and the control circuit 16 is operated, the motor 17 is driven, and the wafer holding table 2 is rotated. This rotation of the motor 17 in the forward or reverse direction is caused by the rotation of the motor 17
This continues until there is no more detection signal from the reference cut surface 4, and the reflected light from the reference cut surface 4 is guided between the two photodetectors 11 and 12.
さらに、単結晶ウエハー3の結晶方位を精度よ
くスクライブの方向に合わせるために、回転操作
部18によりウエハー保持台2を回転させ、両光
検知器11,12間を通つた反射光が、ハーフミ
ラー10を透過し、かつスリツト13を通つて高
感度光検知器14に入射するよう調整するととも
に、メータ15により高感度光検知器14への光
の入射が最大になるよう微調整する。したがつ
て、単結晶ウエハー3の基準カツト面4とスクラ
イブカツター5によるスクライブの方向とが正確
に一致する。 Further, in order to accurately align the crystal orientation of the single crystal wafer 3 with the direction of the scribe, the wafer holding table 2 is rotated by the rotation operation unit 18, and the reflected light passing between both the photodetectors 11 and 12 is reflected from the half mirror. Adjustment is made so that the light passes through 10 and enters the high-sensitivity photodetector 14 through the slit 13, and fine adjustment is made using the meter 15 so that the amount of light incident on the high-sensitivity photodetector 14 is maximized. Therefore, the reference cut plane 4 of the single crystal wafer 3 and the direction of scribing by the scribe cutter 5 exactly match.
以上のように、この発明は、単結晶ウエハーを
保持する回転自在のウエハー保持台と、前記ウエ
ハー保持台上に保持された前記単結晶ウエハーの
基準カツト面に前記ウエハー保持台の上面に平行
で該ウエハー保持台の回転中心に指向する光を入
射する光源と、前記光の入射路の両側に配置され
前記単結晶ウエハーの基準カツト面からの反射光
を受光する2個の光検知路と、前記受光した光検
知器により制御され前記ウエハー保持台を回転さ
せて前記反射光を前記両光検知器の間に導くモー
タと、前記両光検知器の中間に設けられた高感度
光検知器と、前記反射光を前記高感度光検知器の
中心部に導く前記ウエハー保持台の回転操作部と
を備えたことを特微とする単結晶ウエハースクラ
イブ装置である。 As described above, the present invention includes a rotatable wafer holder that holds a single crystal wafer, and a reference cut plane of the single crystal wafer held on the wafer holder that is parallel to the upper surface of the wafer holder. a light source that inputs light directed toward the rotation center of the wafer holding table; and two light detection paths that are arranged on both sides of the light input path and receive reflected light from the reference cut surface of the single crystal wafer; a motor controlled by the photodetector that receives the light to rotate the wafer holder and guide the reflected light between the photodetectors; and a high-sensitivity photodetector provided between the photodetectors. A single crystal wafer scribing apparatus is characterized in that the single crystal wafer scribing apparatus further comprises: a rotating operation section for the wafer holder that guides the reflected light to the center of the high-sensitivity photodetector.
したがつて、この発明によると、光源より単結
晶ウエハーの基準カツト面に入射された光の反射
光を、2個の光検知器によるウエハー保持台の回
転制御と、回転操作部によるウエハー保持台の回
転微調整とによつて、高感度光検知器の中心部に
導くことにより、前記単結晶ウエハーを正確に位
置決めすることができ、単結晶ウエハーの大きさ
に関係なく、単結晶ウエハーがウエハー保持台上
の回転中心位置より多少ずれて配置されても、常
に正確な位置決めが実現できるものであり、従来
のように、X線回析等の複雑な手段を用いること
なく、簡単かつ正確に単結晶ウエハーの結晶方位
をスクライブする方向に合わせることができる。 Therefore, according to the present invention, the reflected light of the light incident on the reference cut surface of the single crystal wafer from the light source is controlled by the two photodetectors to control the rotation of the wafer holder, and the rotation operation section to control the wafer holder. By finely adjusting the rotation of the wafer, the single crystal wafer can be accurately positioned by guiding it to the center of the highly sensitive photodetector, and regardless of the size of the single crystal wafer, the single crystal wafer Even if the position is slightly shifted from the center of rotation on the holding table, accurate positioning can always be achieved, and it can be easily and accurately positioned without using complicated means such as X-ray diffraction as in the past. The crystal orientation of a single crystal wafer can be aligned with the scribing direction.
図面は、この発明の単結晶ウエハースクライブ
装置の1実施例の構成図である。
2…ウエハー保持台、3…単結晶ウエハー、4
…基準カツト面、5…スクライブカツター、6…
光源、11,12…光検知器、14…高感度光検
知器、17…モータ、18…回転操作部。
The drawing is a configuration diagram of one embodiment of the single crystal wafer scribing apparatus of the present invention. 2... Wafer holding stand, 3... Single crystal wafer, 4
...Reference cutting surface, 5...Scribe cutter, 6...
Light source, 11, 12...photodetector, 14...high sensitivity photodetector, 17...motor, 18...rotation operation unit.
Claims (1)
ー保持台と、前記ウエハー保持台上に保持された
前記単結晶ウエハーの基準カツト面に前記ウエハ
ー保持台の上面に平行で該ウエハー保持台の回転
中心に指向する光を入射する光源と、前記光の入
射路の両側に配置され前記単結晶ウエハーの基準
カツト面からの反射光を受光する2個の光検知器
と、前記受光した光検知器により制御され前記ウ
エハー保持台を回転させて前記反射光を前記両光
検知器の間に導くモータと、前記両光検知器の中
間に設けられた高感度光検知器と、前記反射光を
前記高感度光検知器の中心部に導く前記ウエハー
保持台の回転操作部とを備えたことを特徴とする
単結晶ウエハースクライブ装置。1. A rotatable wafer holder that holds a single crystal wafer, and a reference cut plane of the single crystal wafer held on the wafer holder, parallel to the top surface of the wafer holder and at the center of rotation of the wafer holder. Controlled by a light source that inputs directed light, two photodetectors that are placed on both sides of the light incident path and that receive reflected light from the reference cut surface of the single crystal wafer, and the photodetector that receives the light. a motor that rotates the wafer holding table and guides the reflected light between the two photodetectors; a high-sensitivity photodetector provided between the two photodetectors; A single-crystal wafer scribing apparatus comprising: a rotating operation section for guiding the wafer holder to the center of a photodetector.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1368279A JPS55105347A (en) | 1979-02-07 | 1979-02-07 | Apparatus for scribing single-crystal wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1368279A JPS55105347A (en) | 1979-02-07 | 1979-02-07 | Apparatus for scribing single-crystal wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55105347A JPS55105347A (en) | 1980-08-12 |
JPS6157701B2 true JPS6157701B2 (en) | 1986-12-08 |
Family
ID=11839944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1368279A Granted JPS55105347A (en) | 1979-02-07 | 1979-02-07 | Apparatus for scribing single-crystal wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55105347A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63171003A (en) * | 1987-01-08 | 1988-07-14 | Matsushita Electric Ind Co Ltd | Reception converter for satellite broadcast |
JPH0251407U (en) * | 1988-10-03 | 1990-04-11 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60120536A (en) * | 1983-12-02 | 1985-06-28 | Rohm Co Ltd | Semiconductor cleaved surface detector |
JPH0770583B2 (en) * | 1987-03-17 | 1995-07-31 | 富士通株式会社 | Wafer alignment method |
JPH0312946A (en) * | 1989-06-10 | 1991-01-21 | Tokyo Electron Ltd | Wafer prealignment method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49115665A (en) * | 1973-03-07 | 1974-11-05 | ||
JPS54585A (en) * | 1977-06-02 | 1979-01-05 | Terumetsuku Kk | Automatic angle setting device |
-
1979
- 1979-02-07 JP JP1368279A patent/JPS55105347A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49115665A (en) * | 1973-03-07 | 1974-11-05 | ||
JPS54585A (en) * | 1977-06-02 | 1979-01-05 | Terumetsuku Kk | Automatic angle setting device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63171003A (en) * | 1987-01-08 | 1988-07-14 | Matsushita Electric Ind Co Ltd | Reception converter for satellite broadcast |
JPH0251407U (en) * | 1988-10-03 | 1990-04-11 |
Also Published As
Publication number | Publication date |
---|---|
JPS55105347A (en) | 1980-08-12 |
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