JPS61136547U - - Google Patents
Info
- Publication number
- JPS61136547U JPS61136547U JP1985018027U JP1802785U JPS61136547U JP S61136547 U JPS61136547 U JP S61136547U JP 1985018027 U JP1985018027 U JP 1985018027U JP 1802785 U JP1802785 U JP 1802785U JP S61136547 U JPS61136547 U JP S61136547U
- Authority
- JP
- Japan
- Prior art keywords
- metal piece
- insulating
- metal
- integrated circuit
- hybrid integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 3
- 239000004020 conductor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Description
第1図は本発明の実施例に係わる混成集積回路
の一部を示す断面図、第2図は第1図の放熱体の
断面図、第3図及び第4図は従来の混成集積回路
の一部を夫々示す断面図である。
1……半導体チツプ、4……金属基板、5……
セラミツク基板、6……導体、9……保護樹脂、
12……放熱体、12a,12c……第1及び第
2の金属片、12b……絶縁分離層。
FIG. 1 is a cross-sectional view showing a part of a hybrid integrated circuit according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the heat sink shown in FIG. 1, and FIGS. 3 and 4 are cross-sectional views of a conventional hybrid integrated circuit. FIG. 1... Semiconductor chip, 4... Metal substrate, 5...
Ceramic substrate, 6... Conductor, 9... Protective resin,
12... Heat sink, 12a, 12c... First and second metal pieces, 12b... Insulating separation layer.
Claims (1)
ら成る積層体であり、前記絶縁分離層が前記第1
及び第2の金属片よりも薄く形成され、前記第1
の金属片が前記金属基板に固着されている放熱体
と、 前記放熱体の前記第2の金属片上に固着された
半導体チツプと、 前記金属基板上に形成された膜回路用絶縁層と
、 前記絶縁層上に形成された膜回路と を備えた混成集積回路。 (2) 前記絶縁分離層は、セラミツク層である実
用新案登録請求の範囲第(1)項記載の混成集積回
路。 (3) 前記第2の金属片は、その体積が前記第1
の金属片の体積よりも大きいものである実用新案
登録請求の範囲第(1)項記載の混成集積回路。 (4) 前記膜回路用絶縁層は、前記金属基板に固
着された絶縁基板である実用新案登録請求の範囲
第(1)項記載の混成集積回路。 (5) 前記膜回路用絶縁層は、前記金属基板上に
形成された絶縁膜である実用新案登録請求の範囲
第(1)項記載の混成集積回路。[Claims for Utility Model Registration] (1) A laminate consisting of a metal substrate, a first metal piece, an insulating separation layer, and a second metal piece, the insulating separation layer being the first metal piece.
and a second metal piece formed thinner than the first metal piece.
a heat sink having a metal piece fixed to the metal substrate; a semiconductor chip fixed on the second metal piece of the heat sink; an insulating layer for a membrane circuit formed on the metal substrate; A hybrid integrated circuit comprising a membrane circuit formed on an insulating layer. (2) The hybrid integrated circuit according to claim 1, wherein the insulating separation layer is a ceramic layer. (3) The second metal piece has a volume equal to that of the first metal piece.
The hybrid integrated circuit according to claim (1), which is larger than the volume of the metal piece. (4) The hybrid integrated circuit according to claim (1), wherein the membrane circuit insulating layer is an insulating substrate fixed to the metal substrate. (5) The hybrid integrated circuit according to claim (1), wherein the film circuit insulating layer is an insulating film formed on the metal substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985018027U JPH0333071Y2 (en) | 1985-02-12 | 1985-02-12 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985018027U JPH0333071Y2 (en) | 1985-02-12 | 1985-02-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61136547U true JPS61136547U (en) | 1986-08-25 |
JPH0333071Y2 JPH0333071Y2 (en) | 1991-07-12 |
Family
ID=30506279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985018027U Expired JPH0333071Y2 (en) | 1985-02-12 | 1985-02-12 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0333071Y2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013132644A1 (en) * | 2012-03-09 | 2013-09-12 | 三菱電機株式会社 | Semiconductor module |
-
1985
- 1985-02-12 JP JP1985018027U patent/JPH0333071Y2/ja not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013132644A1 (en) * | 2012-03-09 | 2013-09-12 | 三菱電機株式会社 | Semiconductor module |
US9443784B2 (en) | 2012-03-09 | 2016-09-13 | Mitsubishi Electric Corporation | Semiconductor module including plate-shaped insulating members having different thickness |
Also Published As
Publication number | Publication date |
---|---|
JPH0333071Y2 (en) | 1991-07-12 |
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