[go: up one dir, main page]

JPS6032125Y2 - Single crystal manufacturing equipment - Google Patents

Single crystal manufacturing equipment

Info

Publication number
JPS6032125Y2
JPS6032125Y2 JP260081U JP260081U JPS6032125Y2 JP S6032125 Y2 JPS6032125 Y2 JP S6032125Y2 JP 260081 U JP260081 U JP 260081U JP 260081 U JP260081 U JP 260081U JP S6032125 Y2 JPS6032125 Y2 JP S6032125Y2
Authority
JP
Japan
Prior art keywords
single crystal
sphere
crystal manufacturing
manufacturing equipment
quartz tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP260081U
Other languages
Japanese (ja)
Other versions
JPS57116776U (en
Inventor
洋二 竹内
Original Assignee
横河電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 横河電機株式会社 filed Critical 横河電機株式会社
Priority to JP260081U priority Critical patent/JPS6032125Y2/en
Publication of JPS57116776U publication Critical patent/JPS57116776U/ja
Application granted granted Critical
Publication of JPS6032125Y2 publication Critical patent/JPS6032125Y2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【考案の詳細な説明】 本考案は、単結晶製造装置に関し、更に詳しくは、エレ
クトロニクス材料として注目されているオルソフェライ
ト等の良質な単結晶を製造する集中加熱形の単結晶製造
装置に関する。
[Detailed Description of the Invention] The present invention relates to a single crystal manufacturing apparatus, and more particularly to a concentrated heating single crystal manufacturing apparatus for manufacturing high quality single crystals such as orthoferrite, which is attracting attention as an electronics material.

第1図は、単結晶製造装置の従来例の原理説明図であり
、図中、1はハロゲンランプ、2は内壁面が金めつきさ
れた楕円体状の回転楕円面鏡、3は試料の多結晶素材棒
、4は種子結晶、5は溶融帯域、6は石英管である。
FIG. 1 is an explanatory diagram of the principle of a conventional single-crystal manufacturing apparatus. In the figure, 1 is a halogen lamp, 2 is an ellipsoidal spheroidal mirror whose inner wall surface is gold-plated, and 3 is a sample. A polycrystalline material rod, 4 is a seed crystal, 5 is a melting zone, and 6 is a quartz tube.

同図において、回転楕円面鏡2の一方の焦点に設置され
たハロゲンランプ1は熱源として作用し、その放射熱は
回転楕円面鏡2で集光して回転楕円面鏡2の他方の焦点
に相当する石英管6の所定箇所を集中的に加熱する。
In the figure, a halogen lamp 1 installed at one focal point of a spheroidal mirror 2 acts as a heat source, and its radiant heat is focused by the spheroidal mirror 2 and directed to the other focal point of the spheroidal mirror 2. A corresponding predetermined location of the quartz tube 6 is intensively heated.

一方、石英管6の中には上から吊り下げられた多結晶素
材棒3と下に支えられた種子結晶4が入れられるととも
に、石英管6内の雰囲気は可変であり普通必要なガスが
流されている。
On the other hand, inside the quartz tube 6, a polycrystalline material rod 3 suspended from above and a seed crystal 4 supported at the bottom are placed, and the atmosphere inside the quartz tube 6 is variable, so that normally the necessary gas flows. has been done.

而して、ハロゲンランプ1に電力が供給されると、多結
晶素材棒3と種子結晶4の間に溶融帯域5ができる。
When power is supplied to the halogen lamp 1, a molten zone 5 is formed between the polycrystalline rod 3 and the seed crystal 4.

この状態で、多結晶素材棒3と種子結晶4が互いに逆方
向に回転させられるとともに全体的に上から下へゆっく
りと下降させられてゆくと、単結晶が成長する。
In this state, when the polycrystalline material rod 3 and the seed crystal 4 are rotated in opposite directions and slowly lowered as a whole from top to bottom, a single crystal grows.

然し乍ら、上記従来例においては、石英管6内の雰囲気
に対する制限事項がなくてあらゆる気体が使えるほか熱
源としてのハロゲンランプ1の安定性も高い等の利点を
有する反面、回転楕円面鏡2の製作が極めて難しい上、
該回転楕円面鏡2の高温雰囲気中にノzoゲンランプ1
が設置されている構成であるためハロゲンランプ1の寿
命が短くなる等の欠点があった。
However, in the conventional example described above, there are no restrictions on the atmosphere inside the quartz tube 6, so any gas can be used, and the halogen lamp 1 as a heat source is highly stable. is extremely difficult, and
A nozogen lamp 1 is placed in the high temperature atmosphere of the spheroidal mirror 2.
Since the halogen lamp 1 is provided with a lamp, there are disadvantages such as a shortened life span of the halogen lamp 1.

本考案は、かかる欠点に鑑みてなされたものであり、そ
の目的は、上記欠点が全て取り除かれた製作容易な集中
加熱形の単結晶製造装置を提供するにある。
The present invention has been made in view of these drawbacks, and its purpose is to provide an easy-to-manufacture centralized heating type single crystal manufacturing apparatus that eliminates all of the above drawbacks.

本考案の特徴は、良質な単結晶を製造する集中加熱形の
単結晶製造装置において、外側に高周波コイルが周設さ
れた筒状の石英保護管に内設され、且つ外殻表面に金若
しくは白金がメッキされるとともに内壁面は全反射面を
形成している球体に対して、回転可能であり且つ内部に
試料が収納される石英管を貫通するようにして設けたこ
とにある。
The feature of the present invention is that a single crystal manufacturing apparatus of a concentrated heating type that manufactures high-quality single crystals is installed inside a cylindrical quartz protective tube with a high-frequency coil surrounding it on the outside, and that the outer shell surface is coated with gold or gold. The sphere is plated with platinum and has an inner wall surface forming a total reflection surface, which is rotatable and is provided so as to pass through a quartz tube in which a sample is housed.

以下、本考案について図を用いて詳細に説明する。Hereinafter, the present invention will be explained in detail using figures.

第2図は、本考案実施例の原理説明図であり、図中、1
1は高周波コイル、12は筒状の石英保護管、13は試
料の多結晶素材棒、14は種子結晶、15は溶融帯域、
16は石英管、17は石英等の材料でなり内壁面が全反
射面を形成している球体、18は金若しくは白金等であ
り球体17の外殻表面に所定の厚さく例えば約100μ
)でメッキ(若しくは蒸着)された被膜である。
FIG. 2 is an explanatory diagram of the principle of the embodiment of the present invention, and in the figure, 1
1 is a high frequency coil, 12 is a cylindrical quartz protection tube, 13 is a polycrystalline material rod of a sample, 14 is a seed crystal, 15 is a melting zone,
16 is a quartz tube; 17 is a sphere made of a material such as quartz and whose inner wall surface forms a total reflection surface; 18 is gold, platinum, etc.;
) is a coating plated (or vapor-deposited).

上記構成からなる本考案の実施例において、高周波コイ
ル11に高周波電流が流されると、被膜18の表面に表
皮効果による電流が流れて球体17が発熱し、該熱は球
体17の内壁面で全反射しながら石英管16の所定部分
を集中的に加熱する。
In the embodiment of the present invention having the above configuration, when a high frequency current is passed through the high frequency coil 11, a current flows through the surface of the coating 18 due to the skin effect, causing the sphere 17 to generate heat, and the heat is completely absorbed by the inner wall surface of the sphere 17. A predetermined portion of the quartz tube 16 is heated intensively while being reflected.

一方、石英管16の中には上から吊り下げられた多結晶
素材棒13と下に支えられた種子結晶14が入れられて
おり、石英管16の所定部分の加熱に伴ない多結晶素材
棒13と種子結晶14の間に溶融帯域15ができる。
On the other hand, inside the quartz tube 16, a polycrystalline material rod 13 suspended from above and a seed crystal 14 supported below are placed. A melting zone 15 is formed between the seed crystal 13 and the seed crystal 14 .

この状態で、多結晶素材棒13と種子結晶14が互いに
逆方向に回転させられるとともに全体的に上から下へゆ
っくりと下降させられてゆき、単結晶が成長する。
In this state, the polycrystalline material rod 13 and the seed crystal 14 are rotated in opposite directions and slowly lowered as a whole from top to bottom, thereby growing a single crystal.

以上詳しく説明したような本考案の実施例によれば、外
部の高周波コイルに流れる高周波電流による表面効果を
利用して球体を発熱させるとともに、該熱を球体の内壁
面で全反射させる構成であるために、試料が収納された
石英管を熱損失少なく効率のよい加熱ができるという利
点を有している。
According to the embodiment of the present invention as described in detail above, the sphere is made to generate heat by utilizing the surface effect caused by the high frequency current flowing through the external high frequency coil, and the heat is totally reflected on the inner wall surface of the sphere. Therefore, it has the advantage that the quartz tube containing the sample can be heated efficiently with little heat loss.

また、本考案の実施例によれば、前記従来例のような回
転楕円面鏡やハロゲンランプが不要であるために、これ
に伴なう前記従来例の欠点も解消され、単結晶製造装置
をより簡単且つ容易に製作できるという利点も有してい
る。
Furthermore, according to the embodiment of the present invention, there is no need for a spheroidal mirror or a halogen lamp as in the conventional example, so the accompanying drawbacks of the conventional example are also eliminated, and single crystal manufacturing equipment can be improved. It also has the advantage of being simpler and easier to manufacture.

尚、本考案の他の実施例として、第2図の球体17を熱
伝導率の小さいセラミック等からなる耐熱性材料で作る
とともに、球体17の内壁面にも金若しくは白金をメッ
キする等して鏡面仕上げし、他は上記本考案実施例と同
一にしたものがある。
In addition, as another embodiment of the present invention, the sphere 17 shown in FIG. 2 is made of a heat-resistant material such as ceramic with low thermal conductivity, and the inner wall surface of the sphere 17 is also plated with gold or platinum. There is one that has a mirror finish and is otherwise the same as the embodiment of the present invention described above.

この場合、球体17からの熱損失が上記本考案実施例の
場合に比して更に少なく経済的利益が出る等、若干の新
たな更なる利点も有する。
In this case, there are some new and additional advantages, such as the fact that the heat loss from the sphere 17 is even smaller than in the embodiment of the present invention, resulting in economical benefits.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、単結晶製造装置の従来例の原理説明図、第2
図は、本考案実施例の原理説明図である。 1・・・・・・ハロゲンランプ、2・・・・・・回転楕
円面鏡、3.13・・・・・・多結晶素材棒、4,14
・・・・・・種子結晶、5,15・・・・・・溶融帯域
、6,16・・・・・・石英管、11・・・・・・高周
波コイル、12・・・・・・石英保護管、17・・・・
・・球体、18・・・・・・被膜。
Figure 1 is an explanatory diagram of the principle of a conventional example of single crystal manufacturing equipment;
The figure is an explanatory diagram of the principle of the embodiment of the present invention. 1...Halogen lamp, 2...Spheroidal mirror, 3.13...Polycrystalline material rod, 4,14
... Seed crystal, 5, 15 ... Melting zone, 6, 16 ... Quartz tube, 11 ... High frequency coil, 12 ... Quartz protection tube, 17...
... Sphere, 18... Coating.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] エレクトロニクス材料としての良質な単結晶を製造する
集中加熱形の単結晶製造装置において、外殻表面に金若
しくは白金がメッキされるとともに内壁面は全反射面を
形成している球体と、該球体を貫通するように設けられ
るとともに回転可能であり且つ内部に試料が入れられた
石英管と、前記球体を内設するとともに外側に高周波コ
イルが周設された筒状の石英保護管とを具備することを
特徴とする単結晶製造装置。
In a concentrated heating type single crystal production equipment that produces high-quality single crystals as electronics materials, there are two types of equipment: a sphere whose outer shell surface is plated with gold or platinum, and whose inner wall surface forms a total reflection surface; A quartz tube that is provided so as to pass through it, is rotatable, and has a sample placed inside it, and a cylindrical quartz protection tube that has the sphere inside it and a high-frequency coil surrounding it on the outside. Single crystal manufacturing equipment featuring:
JP260081U 1981-01-12 1981-01-12 Single crystal manufacturing equipment Expired JPS6032125Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP260081U JPS6032125Y2 (en) 1981-01-12 1981-01-12 Single crystal manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP260081U JPS6032125Y2 (en) 1981-01-12 1981-01-12 Single crystal manufacturing equipment

Publications (2)

Publication Number Publication Date
JPS57116776U JPS57116776U (en) 1982-07-20
JPS6032125Y2 true JPS6032125Y2 (en) 1985-09-25

Family

ID=29801035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP260081U Expired JPS6032125Y2 (en) 1981-01-12 1981-01-12 Single crystal manufacturing equipment

Country Status (1)

Country Link
JP (1) JPS6032125Y2 (en)

Also Published As

Publication number Publication date
JPS57116776U (en) 1982-07-20

Similar Documents

Publication Publication Date Title
JPH0416702B2 (en)
JPH06220619A (en) Mbe source using heater to achieve temperature gradient
GB853729A (en) Improvements in or relating to methods for producing ultra-pure silicon
TWI812506B (en) Heater Elements and Single Crystal Furnaces
JPS6032125Y2 (en) Single crystal manufacturing equipment
JP3662962B2 (en) Single crystal manufacturing method and apparatus
US4522680A (en) Method for producing crystals
KR100297575B1 (en) Single crystal production method and drawing device
JP2550344B2 (en) Infrared heating single crystal manufacturing equipment
JPS5843938B2 (en) rubidium genshihatsushinki
JP2864466B2 (en) Diamond production equipment
WO2023245932A1 (en) Crucible and single crystal furnace
JPS6032126Y2 (en) Single crystal manufacturing equipment
JPS6339555B2 (en)
JPH0735383Y2 (en) Thin film vapor deposition equipment
JPS6086090A (en) floating zone melter
JPH0735382Y2 (en) Thin film vapor deposition equipment
JPH027435Y2 (en)
JPS58293Y2 (en) Semiconductor heat treatment furnace core tube
JPS58660Y2 (en) Optical fiber material manufacturing equipment
JPS59100269A (en) Element for vacuum deposition
JP2558659B2 (en) Infrared heating single crystal manufacturing equipment
JPH05195189A (en) Induction plasma thermal spraying method
JPH0388790A (en) Infrared-heated single crystal producing device
JPS5815473B2 (en) floating zone melter