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JPS603189A - リ−ド線の接続方法 - Google Patents

リ−ド線の接続方法

Info

Publication number
JPS603189A
JPS603189A JP58111245A JP11124583A JPS603189A JP S603189 A JPS603189 A JP S603189A JP 58111245 A JP58111245 A JP 58111245A JP 11124583 A JP11124583 A JP 11124583A JP S603189 A JPS603189 A JP S603189A
Authority
JP
Japan
Prior art keywords
layer
thin
aluminum
electrode body
hybrid integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58111245A
Other languages
English (en)
Inventor
平井　幸造
富樫　公明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58111245A priority Critical patent/JPS603189A/ja
Publication of JPS603189A publication Critical patent/JPS603189A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H01L2224/05082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48491—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/85424—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、アルミニウム細線全部品接続に合理的に利用
できるようにした混成集積回路等のリード線の接続方法
に関する。
従来例の構成とその問題点 混成集積回路においては半導体チップと基板導電路を電
気的に接続するのに一般的に金細線あるいはアルミニウ
ム細線が用いられてきているが、経済的な観点からもア
ルミニウム細線を用いる方向が強く志向されてきている
。
以下に従来の混成集積回路におけるアルミニウム細線の
接続方法について説明する。第１図は従来の混成集積回
路において用いられている接続後の状態図であり、１は
絶縁基板あるいは絶縁層、２はその絶縁層上に設けられ
た導電路である。
この導電路２は銅箔あるいは銀ペーストなと全焼成して
設けられている。この導電路２上にアルミニウム細線３
を超音波振動法によって直接接続することは銅箔表面層
の酸化その他の理由により不可能であり、そのため従来
の混成集積回路においては、導電路２上のアルミニウム
細線接続部分に第１図の４に示すごとくニッケルメッキ
層、あるいはアルミニウム金属薄層を形成し、そこにア
ルミニウム細線３を超音波振動法によ−・で接続する方
法がとられていた。
ところが、従来の方法では、ニッケルメッキ層４を設け
る場合では、メッキ層を部分的に設けることが必要であ
り、またアルミニウム金属薄層を形成する場合では、銅
箔とアルミニウム焔が貼り合された箔から銅箔部分、ア
ルミニウム金属薄層部分と別々にゴッチング形成するこ
とが必要であり、それぞれ、設備的にも、寸だ工程的と
も実に複雑な手段をとる必要があった。
発明の目的 本発明は、上記従来の問題点を解消するものであり、混
成集積回路等の回路基板上の導電路にアルミニウム細線
を超音波振動法によって接続することを合理的かつ容易
に可能にするり一ド線の接続方法を提供することを目的
とする。
発明の構成 本発明は、導電路上に一方の主面がアルミニウノ、金属
薄層で他方の主面が鉄あるいは鉄の合金からなる電極体
を半田によって形成し、その後超音波振動法によってア
ルミニウム細線を電極体に容易にかつ合理的に接続でき
るようにしたものである。
実施例の説明 第２図は本発明の一実施例における混成集積回路のアル
ミニウム細線の接続方法の接続図を示すものである。５
ｒｒ１．絶縁基板あるいは絶縁層、６はその絶縁層上に
設けられた導電路、７はその一面にアルミニウム金属薄
層８を有する鉄あるいはその合金より成る電極体、９は
一導電路６と電極体７を接続する半田層であり、この半
１１層９は、混成集積回路を構成する半導体チップ、チ
ップ抵抗等を導電路６に接続するのに用いる半田と同様
に、ペースト状半田にて基板５上に印刷し、電極体７を
含めた構成部品を装着稜加熱溶融することにより形成す
るものである。
本発明で用いた電極体７は鉄とニッケルの合金より成る
もので、半田による接続性は非常に良好なものである。
この電極伸子は例えは−面にアルミニウム金属薄層８を
重ねた鉄−ニッケルのテープ状のものを打ち抜くことに
より簡単に作ることが可能である。このように形成した
電極体７ばその表面がアルミニウム金属薄層８であり、
超音波振動によってアルミニウム線を接続するには最も
良好な特性を示すものである。第２図では電極体７の一
面に形成されたアルミニウム金属薄層８に混成集積回路
の回路接続用のアルミニウム細線１０が超音波振動法に
より接続される。
発明の効果 以上のように本発明によれば、導電路上にアルミニウム
層と鉄せたはその合金からなる電極体が形成されるため
、混成集積回路等におけるアルミニウム細線の超音波振
動法による接続を、メッキ。
エツチング等の複雑な処理を行うことなく、上記の電極
体を集積回路を構成する他の部品と同時に容易に取付形
成して可能にすることができ、接続部の接続強度も向上
する。
【図面の簡単な説明】
第１図は従来の混成集積回路におけるリード線の接続方
法を説明するための接続部断面図、第２図は本発明の一
実施例におけるリード線の接続方法状態を示す接続部断
面図である。 ５・・・・・・絶縁基板、６・・・・・・導電路、７・
・・・・・電極体、８・・・・・・アルミニウム金属薄
層、９・・・・・・半田、１゜・・・・・・アルミニウ
ム細線。 代理人の氏名　弁理士　中　尾　敏　男　ほか１名第１
図 第２図

Claims (1)

    【特許請求の範囲】
  1. 回路基板の導電路上に、一方の主面がアルミニウム層か
    らなり、他方の主面が鉄または鉄の合金からなる電磁体
    の前記他方の主面を半田によって形成し、前記電極体の
    アルミニウム層に超音波振動法によってアルミニウム細
    線からなるリード純金接続することを特徴とするリード
    線の接続方法。
JP58111245A 1983-06-20 1983-06-20 リ−ド線の接続方法 Pending JPS603189A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58111245A JPS603189A (ja) 1983-06-20 1983-06-20 リ−ド線の接続方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58111245A JPS603189A (ja) 1983-06-20 1983-06-20 リ−ド線の接続方法

Publications (1)

Publication Number Publication Date
JPS603189A true JPS603189A (ja) 1985-01-09

Family

ID=14556263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58111245A Pending JPS603189A (ja) 1983-06-20 1983-06-20 リ−ド線の接続方法

Country Status (1)

Country Link
JP (1) JPS603189A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5651494A (en) * 1995-03-17 1997-07-29 Nippondenso Co., Ltd. Method of ultrasonic welding of different metals
GB2338200B (en) * 1997-06-05 2003-04-09 Ford Motor Co Method of soldering materials supported on low-melting substrates

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396667A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Wire bonding method
JPS587338B2 (ja) * 1975-03-10 1983-02-09 旭化成株式会社 新規ポリマ−担持吸着剤

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS587338B2 (ja) * 1975-03-10 1983-02-09 旭化成株式会社 新規ポリマ−担持吸着剤
JPS5396667A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Wire bonding method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5651494A (en) * 1995-03-17 1997-07-29 Nippondenso Co., Ltd. Method of ultrasonic welding of different metals
GB2338200B (en) * 1997-06-05 2003-04-09 Ford Motor Co Method of soldering materials supported on low-melting substrates

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