JPS6028014A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS6028014A JPS6028014A JP13440083A JP13440083A JPS6028014A JP S6028014 A JPS6028014 A JP S6028014A JP 13440083 A JP13440083 A JP 13440083A JP 13440083 A JP13440083 A JP 13440083A JP S6028014 A JPS6028014 A JP S6028014A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic head
- copper
- magnetic
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 8
- 239000000696 magnetic material Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 238000002844 melting Methods 0.000 abstract description 5
- 230000001681 protective effect Effects 0.000 abstract description 5
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 4
- 230000008018 melting Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000005389 magnetism Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007736 thin film deposition technique Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- MECMQNITHCOSAF-UHFFFAOYSA-N manganese titanium Chemical compound [Ti].[Mn] MECMQNITHCOSAF-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- -1 siliconium Chemical compound 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
Landscapes
- Magnetic Heads (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
【発明の詳細な説明】
技術分野
本発明は薄膜磁気ヘッド、更に詳細にはフェライト等か
ら成る基板上に薄膜線輪回路及び磁性薄膜を積層して成
る薄膜磁気ヘッドに関する。TECHNICAL FIELD The present invention relates to a thin film magnetic head, and more particularly to a thin film magnetic head comprising a thin film coil circuit and a magnetic thin film laminated on a substrate made of ferrite or the like.
従来技術
とのような薄膜磁気ヘッドは駆動周波数が高くでき、又
薄膜で構成されていることによりバルクタイプの磁気ヘ
ッドに比べ小型化、高密度化が容易であるため近年実用
化に対する研究が盛んに行なわれている。又垂直磁気記
録用の磁気ヘッドのマルチトラック化に対しても薄膜磁
気ヘッドが有効であり、このマルチトラック化により同
時に多くの情報を記録再生をすることが可能になる。Thin-film magnetic heads, such as the conventional technology, can drive at high frequencies, and because they are composed of thin films, they can be made smaller and more dense than bulk-type magnetic heads, so research into practical use has been active in recent years. is being carried out. Thin-film magnetic heads are also effective for multi-tracking magnetic heads for perpendicular magnetic recording, and this multi-tracking makes it possible to record and reproduce a large amount of information at the same time.
通常このような薄膜磁気ヘッドはフェライト等から成る
磁性基板上に薄膜堆積法を用い線輪回路絶縁層更に上部
磁性層等を積層して構成されている。この場合薄膜磁気
ヘッドの線輪回路はアルミニウム又はアルミニウムが８
０重量％以上の合金で構成されていたので次のような欠
点がある。Usually, such a thin film magnetic head is constructed by laminating a wire circuit insulating layer, an upper magnetic layer, etc. on a magnetic substrate made of ferrite or the like using a thin film deposition method. In this case, the coil circuit of the thin film magnetic head is made of aluminum or aluminum.
Since it was composed of an alloy of 0% by weight or more, it had the following drawbacks.
即ちヘッドの製作工程上磁性体部分に生じた歪みを抜く
ために通常焼鈍が行なわれるが、この焼鈍の際に発生す
る高温にょシアルミニウム又はアルミニウム合金で構成
された線輪回路の層が上部又は下部のそれぞれの絶縁層
に相互に拡散し、配線抵抗が増大したりあるいは断線を
引き起すというような問題があった。更に通常薄膜磁気
ヘッドの薄膜製作プロセス終了後に封着が行なわれる。In other words, annealing is normally performed to remove the distortion that occurs in the magnetic material part during the manufacturing process of the head. There is a problem that the insulating layers mutually diffuse into the lower insulating layers, increasing wiring resistance or causing wire breakage. Furthermore, sealing is usually performed after the thin film manufacturing process of the thin film magnetic head is completed.
この封着工程は回路保護及び磁気記録媒体の走行支持部
材として包被材料であるセラミック板、ガラス板、結晶
化ガラス板等の板部材を例えばコーニング社の８４６３
ガラス材等で溶射層して行なわれている。この封着工程
において高温心理が行なわれることにより、封着時発生
する高温によりアルミニウム又はアルミニウム合金で構
成された線輪回路が相互に拡散し、上述したのと同じよ
うな問題を発生させていた。又配線抵抗を低減するため
アルミニウム配線層の厚みを増し、例えば４μｍ以上の
厚みにすると、焼鈍温度６００’付近で配線アルミニウ
ム部材又はアルミニウム合金部材が相変態像が発生し著
しく工程歩留りを低下させていた。In this sealing process, a plate member such as a ceramic plate, a glass plate, or a crystallized glass plate, which is an enveloping material, is used as a circuit protection member and a running support member for a magnetic recording medium.
This is done by thermally spraying a layer of glass material or the like. Due to the high temperature psychology that occurs during this sealing process, wire circuits made of aluminum or aluminum alloy diffuse into each other due to the high temperatures generated during sealing, causing problems similar to those described above. . In addition, if the thickness of the aluminum wiring layer is increased to, for example, 4 μm or more in order to reduce the wiring resistance, a phase transformation image will occur in the wiring aluminum member or aluminum alloy member at an annealing temperature of around 600', which will significantly reduce the process yield. Ta.
目 的
従って本発明は上述したような従来の欠点を除去すると
同時に線輪回路の配線抵抗を減少させることができ、良
好な記録再生を行なうことができる薄膜磁気ヘッドを提
供することを目的とする。OBJECTIVES Therefore, it is an object of the present invention to provide a thin film magnetic head that can eliminate the above-mentioned conventional drawbacks, reduce the wiring resistance of the coil circuit, and perform good recording and reproduction. .
実施例 以下図面に示す実施例に従い本発明の詳細な説明する。Example The present invention will be described in detail below according to embodiments shown in the drawings.
第１図には本発明の実施例による薄膜磁気ヘッドの概略
構成が図示されており、同図において軟磁性であるフェ
ライト等から成る下部磁性体層１上に薄膜堆積法等の薄
膜形成手段によシ記録電流を流すだめの薄膜線輪回路６
が渦巻状に積層される。その後線輪配線を絶縁し又ヘッ
ドギャップ８を形成するために石英ガラス層８が積層さ
れ、その上に上部磁極を構成するパーマロイ等からなる
上部磁性体層３が形成される。父上部磁極３の上部並び
に薄膜線輪回路６の下部には保護板溶着のために使用さ
れ、空隙を生めるための低融点ガラス層４が形成される
。更に一番上には結晶化ガラス等で構成される保護板５
が積層され薄膜磁気ヘッドが構成される。FIG. 1 shows a schematic configuration of a thin film magnetic head according to an embodiment of the present invention, in which a thin film forming method such as a thin film deposition method is applied to a lower magnetic layer 1 made of soft magnetic ferrite or the like. Thin film coil circuit 6 for passing recording current
are stacked in a spiral shape. Thereafter, a quartz glass layer 8 is laminated to insulate the coil wiring and to form a head gap 8, and an upper magnetic layer 3 made of permalloy or the like constituting the upper magnetic pole is formed thereon. A low melting point glass layer 4 is formed above the father magnetic pole 3 and below the thin film coil circuit 6 to be used for welding the protective plate and to create a gap. Furthermore, on the top is a protective plate 5 made of crystallized glass, etc.
are laminated to form a thin film magnetic head.
上記構成において下部磁性体層１及び上部磁性体ｉ２は
パーマロイ、センダスト、スーパーセンダスト及びアモ
ルファス磁性体等で構成するようにしてもよい。又線輪
回路６は銅又は銅合金で構成される。この場合好ましく
は線輪回路６を保護するためにその一面あるいは逆の面
あるいは両面にチタン、バナジウム、クロム、ジリコン
ウム、ニオブ、モリブデン、ハフニウム、タンタル、タ
ングステン等の金属のうち少なくとも１つの金属から成
る薄膜保護７が形成される。In the above structure, the lower magnetic layer 1 and the upper magnetic layer i2 may be made of permalloy, sendust, super sendust, amorphous magnetic material, or the like. Further, the wire loop circuit 6 is made of copper or a copper alloy. In this case, preferably, in order to protect the coil circuit 6, one side, the opposite side, or both sides thereof are made of at least one metal such as titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, and tungsten. A thin film protection 7 is formed.
上記構成において線輪回路６．７に記録電流を流すこと
により上部磁性体層３及び下部磁性体層１に磁束が還流
し、ギャップ８よシヘッド前方（図において右側）に磁
界が発生し、磁気ヘッドに摺動する磁気記録媒体を磁化
し、信号電流に応じ磁気記録を行なうものである。又再
生時には記録媒体よりギャップ８へ流入してきた磁束が
上部磁性体３及び下部磁性体層１を還流し磁気記録媒体
に記録された信号に応じ線輪回路６に電流を誘起し信号
が再生される。In the above configuration, when a recording current is passed through the coil circuit 6.7, magnetic flux flows back into the upper magnetic layer 3 and the lower magnetic layer 1, and a magnetic field is generated across the gap 8 and in front of the head (on the right side in the figure). A magnetic recording medium that slides on a head is magnetized and magnetic recording is performed in response to a signal current. Further, during reproduction, the magnetic flux flowing into the gap 8 from the recording medium circulates through the upper magnetic material 3 and the lower magnetic material layer 1, and induces a current in the coil circuit 6 in accordance with the signal recorded on the magnetic recording medium, and the signal is reproduced. Ru.
上記実施例において保護層７の材質として高融点金属で
あるタンタル、クロム、チタン、タングステン、モリブ
デン、ニオブ、バナジウム、シリコニウム、ハフニウム
等の金属が適当であるが、これらの金属のうち少々くと
も２つから成る合金も線輪保護層として有効である。例
えばチタン−マンガン合金薄膜をスパッターなどで０２
μｍ成膜し、その上に銅薄膜を電界メッキを用いて５μ
ｍ堆積し、更にニクロム−ニッケル合金薄膜を真空蒸着
で０．３μｍ堆積することによシ本発明の効果を実現で
きる。これらの金属又は合金は２ｏｏｆ！−から５０μ
ｍの厚さで積層できる薄膜堆積法を用いて積層できるも
のである。In the above embodiment, suitable materials for the protective layer 7 are high-melting point metals such as tantalum, chromium, titanium, tungsten, molybdenum, niobium, vanadium, siliconium, and hafnium, but at least two of these metals are suitable. Alloys consisting of these are also effective as wire protection layers. For example, a titanium-manganese alloy thin film is sputtered with 02
A copper thin film of 5 μm was deposited on top of it using electroplating.
The effects of the present invention can be achieved by depositing a nichrome-nickel alloy thin film of 0.3 μm in thickness by vacuum evaporation. These metals or alloys are 2oof! - to 50μ
It can be laminated using a thin film deposition method that can be laminated to a thickness of m.
又銅合金あるいは銅を含む線輪配線を行なう場合微細パ
ターンをフォトリソグラフィー及びイオンミーリング技
術を用いて行なうが、銅あるいは銅合金のミーリング速
さが太きいため微細パターンをアルミで行なう場合と比
べて精密に作成することが可能となり、線輪密度の向上
が可能となシ、更に第２図に図示したように抵抗値のバ
ラつきが少ガくなるという効果がある。In addition, when creating copper alloy or copper-containing wire loop wiring, fine patterns are created using photolithography and ion milling technology, but the milling speed of copper or copper alloy is faster than when creating fine patterns with aluminum. It becomes possible to manufacture the wire precisely, improve the wire ring density, and furthermore, as shown in FIG. 2, there is an effect that the variation in resistance value is reduced.
効 果
以上説明しように本発明によれば薄膜磁気ヘッドの線輪
回路に銅あるいは銅合金を用いて線輪を構成するように
しているので、配線材料の固有抵抗をアルミ合金等よシ
低下させることができるので配線抵抗を減少させること
ができ、磁気ヘッドの記録効率、再生効率を向上させる
ことができる。Effects As explained above, according to the present invention, the wire circuit of the thin film magnetic head is made of copper or a copper alloy, so that the specific resistance of the wiring material is lower than that of aluminum alloy or the like. Therefore, the wiring resistance can be reduced, and the recording efficiency and reproduction efficiency of the magnetic head can be improved.
又線輪をタンタル等の高融点金属薄膜で積層することに
よシ、絶縁層との相互拡散を防止し、メンタル等の反応
性の高い金属による犠牲腐食作用から銅あるいは銅合金
を保護しガラス溶着工程のような５００℃以上の酸化雰
囲気における転置や線輪の配線抵抗の上昇を防止するこ
とができるという効果が得られる。In addition, by laminating the wire with a thin film of a high-melting point metal such as tantalum, mutual diffusion with the insulating layer is prevented, and the copper or copper alloy is protected from sacrificial corrosion by highly reactive metals such as metal. This provides the effect of preventing displacement and increase in wire resistance in an oxidizing atmosphere of 500° C. or higher, such as in a welding process.
第１図は本発明による薄膜磁気ヘッドの断面を示す構成
図、第２図は線輪の材質を変えた場合の配線抵抗の値を
示す線図である。
１・・・下部磁性体層 ２・・・絶縁層３・・・上部磁
性体層 ４・・・ガラス層５・・・保護板 ６・・・線
輪
７・・・高融点保護層FIG. 1 is a block diagram showing a cross section of a thin film magnetic head according to the present invention, and FIG. 2 is a diagram showing the value of wiring resistance when the material of the wire ring is changed. 1... Lower magnetic layer 2... Insulating layer 3... Upper magnetic layer 4... Glass layer 5... Protective plate 6... Wire 7... High melting point protective layer
Claims (1)
る薄膜磁気ヘッドにおいて、前記薄膜線輪として銅ある
いは銅合金を用いたことを特徴とする薄膜磁気ヘッド。 ２） 前記線輪回路の少なくとも一面にチタン、バナジ
ウム、クロム、ジルコニウム、ニオブ、モリブテン、ハ
フニウム、タンタル、タングステンのうちいずれか一つ
の金属を含む薄膜を形成したことを特徴とする特許請求
の範囲第１項に記載の薄膜磁気ヘッド。 ３） 前記線輪回路の少なくとも一面にチタン、バナジ
ウム、クロム、ジルコニウム、ニオブ、モリブデン、ハ
フニウム、タンタル、タングステンのうち少なくとも２
つの金属から成る合金膜を形成するようにしたことを特
徴とする特許請求の範囲第１項又は第２項に記載の薄膜
磁気ヘッド。[Scope of Claims] 1) A thin film magnetic head comprising a thin film wire circuit and a magnetic thin film laminated on a substrate, characterized in that the thin film wire circuit is made of copper or a copper alloy. 2) A thin film containing any one of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, and tungsten is formed on at least one surface of the wire circuit. The thin film magnetic head according to item 1. 3) At least two of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, and tungsten on at least one surface of the wire circuit.
3. The thin film magnetic head according to claim 1, wherein an alloy film made of two metals is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13440083A JPS6028014A (en) | 1983-07-25 | 1983-07-25 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13440083A JPS6028014A (en) | 1983-07-25 | 1983-07-25 | Thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6028014A true JPS6028014A (en) | 1985-02-13 |
Family
ID=15127507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13440083A Pending JPS6028014A (en) | 1983-07-25 | 1983-07-25 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6028014A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6464107A (en) * | 1987-09-04 | 1989-03-10 | Fuji Photo Film Co Ltd | Production of thin film magnetic head |
-
1983
- 1983-07-25 JP JP13440083A patent/JPS6028014A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6464107A (en) * | 1987-09-04 | 1989-03-10 | Fuji Photo Film Co Ltd | Production of thin film magnetic head |
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