JP2664139B2 - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JP2664139B2 JP2664139B2 JP61195383A JP19538386A JP2664139B2 JP 2664139 B2 JP2664139 B2 JP 2664139B2 JP 61195383 A JP61195383 A JP 61195383A JP 19538386 A JP19538386 A JP 19538386A JP 2664139 B2 JP2664139 B2 JP 2664139B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- layer
- film
- magnetic head
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は高密度磁気記録に適した薄膜磁気ヘツドに係
り、特に上部および下部磁極の少くとも一方を、高飽和
磁束密度を有するCo系非晶質合金としこの上層又は下層
に金属あるいは合金層を設けたことを特徴とする薄膜磁
気ヘツド。
〔従来の技術〕
従来、薄膜磁気ヘツドの磁極を構成する磁性体として
は飽和磁束密度〜1TのNiFe合金が使われてきたが、記録
密度向上のため飽和磁束密度を高める要求が強くなつて
いる。
たとえば薄膜磁気ヘツドの磁極を構成する磁性体とし
て飽和磁束密度〜1.4TのCo系非晶質合金膜を使用したも
のが、第７回日本応用磁気学会学術講演概要集、8PA5に
示されている。しかし、上部磁性膜と下部磁性膜間を電
気的および磁気的に絶縁する絶縁層としてホトレジス
ト、レジストなどの有機樹脂を用い、またギヤツプ層に
SiO2,Al2O3など無機材料を用いる薄膜磁気ヘツドにCo系
非晶質合金膜を応用した場合に生じるとくに工業的規模
での加工プロセス上の問題点については配慮されていな
かつた。
〔発明が解決しようとする問題点〕
上記従来技術は、薄膜磁気ヘツドの加工プロセス上の
問題点についての配慮がされておらず、高温プロセスに
おけるCo系非晶質合金属と有機樹脂間の反応、Co系非晶
質合金膜上に形成されるSiO2,Al2O3等の膜に剥離が生じ
る等の問題があつた。
本発明の目的は、上述した問題点を解決し、記録再生
効率にすぐれた薄膜磁気ヘツドを歩留りよく製造するこ
とにある。
〔問題点を解決するための手段〕
上記問題点を解決し、記録再生効率の高い薄膜磁気ヘ
ツド製造を可能とするには、上部磁性層および下部磁性
層をCo系非晶質合金膜としこの上層又は下層又は両層を
金属あるいは合金膜とし、Co系非晶質合金膜とホトレジ
ストや有機樹脂あるいはSiO2,Al2O3とが直接接触しない
ようにすることにより達成される。
〔作用〕
本発明は、薄膜磁気ヘツドの上部磁極および下部磁極
をそれぞれ高飽和磁束密度材料であるCo系非晶質合金と
しその上層または下層または両層を金属あるいは合金と
することにより、加工プロセス中に発生する諸問題を解
決したものである。ここで、上部磁極および下部磁極に
設けられた金属あるいは合金膜は、Co系非晶質合金が直
接絶縁層であるポリイミド系樹脂層、あるいはギヤツプ
層を形成するSiO2,Al2O3等と接することをさけるための
ものであり、高温プロセスにおけるポリイミド系樹脂層
とCo系非晶質合金との反応、Co系非晶質合金上にスパツ
タされたSiO2,Al2O3等の剥離を防止する働きがある。よ
つて、高飽和磁束密度材料であるCo系非晶質合金膜を磁
極の主成分とする薄膜磁気ヘツドを歩留りよく製造する
ことができるようになる。
〔実施例〕
以下、本発明の実施例を第１図により説明する。第１
図は薄膜磁気ヘツドの断面を示す模式的な図である。な
お本発明と直接関係しない従来公知の部分たとえば保護
層や磁気コア後部を２層として厚くする等の構造等につ
いては省略して示してある。上下磁性層1,2はCo−Ta−Z
r系非晶質合金膜をスパツタ法により作製したもので、
膜厚は１μｍ前後である。上部磁性層の下地金属層７お
よび下部磁性層の上層の金属層８はCr膜であり、やはり
スパツタ法により作製され、膜厚は20Åから1000Åまで
の範囲を変化させたものである。ギヤツプ層３はSiO2、
絶縁層４はレジスト、基板５はZrO2,コイル６は銅であ
る。
第２図，第３図は保磁力6000e、厚み0.16μｍのCo−
γFe2O3スパツタデイスクを用いて記録再生評価を行な
い、本発明の効果を示したものである。第２図はヘツド
の浮上量0.2μｍとした時2KFCIでの再生出力と上部磁性
層、下部磁性層に設けられたCr膜厚との関係を示したも
のである。
ここで、第２図の縦軸は再生出力相対値を示し、電圧
値（mV）を相対的に表現している。第４図は後部コンタ
クト部の構造を示し、金属（結晶質）層として、Ni−Fe
の軟磁性合金を用いた場合は、後部コンタクト部のギャ
ップ長は０となる。
この実施例では、上下両磁性層の後部コンタクトは金
属層7,8を通して行なわれるため、上下両磁性層に設け
られたCr膜厚の和が後部コンタクト部におけるギヤツプ
長となる。
第２図より、このCr層厚が100Å以下であれば再生出
力の低下は起こらず、500ÅでもCr層を設けない場合の8
0％の再生出力が得られることがわかる。一方、CoTaZr
非晶質合金とレジスト間に設けるCr層の厚みは20Å以上
であれば、高温プロセス時に起こるCoTaZr非晶質合金、
レジスト間の反応を抑えることができ、
以上のことから、上部磁性層の下にある金属層７の厚
みは20Å〜100Å程度が望ましい。
また下部磁性層と基板との間に金属層を設けたり、上
部磁性層の上に金属層を設け、この上に形成される保護
層との密着性を向上させることもできる。Crの他にNb,T
i,Ta,V,Rh,Pt,Pd,W,Mo等を用いることもできるが、Crは
400℃程度の高温プロセスでも、レジストと反応した
り、CoTaZr合金と反応して磁気特性を劣化させることが
ないのでとくに望ましい。他の金属を用いる場合はプロ
セス経験温度を下げる必要があつた。NiFe合金は現在薄
膜ヘツドの磁極材に用いられており、これを金属層7,8
として用いることもできる。この場合上下両磁性層間の
後部コンタクト部はNiFe合金によつて、磁気的に完全に
コンタクトされるので磁気特性上望ましいがプロセスの
経験温度は若干低めにする必要がある。
第３図は高密度信号を25KFCI,低密度信号を5KFCIとし
た時のオーバーライトS/Nとヘツド浮上量との関係を示
したものである。直線11は本発明により作成した薄膜磁
気ヘツドで、Cr薄膜は0.05μｍである。直線12はパーマ
ロイを磁極材に用いた従来の薄膜磁気ヘツドである。こ
のように、今回試作した薄膜磁気ヘツドは浮上量増大に
ともなうオーバーライトS/Nの低下が少なく、浮上量0.3
μｍでもオーバーライトS/N26dB以上であり、明らかに
飽和磁束密度の大きなCo系非晶質合金を磁極材に用いた
効果があらわれている。
Co系非晶質合金としては、CoTaZr合金の他にCoNbZr合
金、CoWZr合金を用いることができる。これらの合金は
いずれも磁歪零近傍の組成で飽和磁束密度が1.0T以上あ
り、従来磁極材料として用いられてきたNi−Fe合金の飽
和磁束密度1.0Tよりも高いので、高い記録再生効率が得
られる。他のCo系非晶質合金、たとえばCoMoZr合金など
は飽和磁束密度が高くなく、オーバーライト特性が劣化
する点では実用上望ましくない。
以上の実施例では、上部磁極および下部磁極をCo系非
晶質合金層と金属層よりなる多層構造として試作した薄
膜磁気ヘツドの効果を示した。
一方、上部磁極および下部磁極に金属層を設けずCoTa
Zr非晶質膜単層として薄膜磁気ヘツドを試作した結果、
透磁率を改善するための400℃の高温プロセス中レジス
トとCoTaZr非晶質膜間に反応が起こり反応生成物がCoTa
Zr非晶質膜上に付着した、この反応のため透磁率は向上
せず約500程度の値であるため記録再生出力は本発明の1
/3以下であつた。またCoTaZr膜上に形成されるSiO2膜が
剥離する、という問題が発生したため、ヘツドの作製歩
留りが極端に低下した。
レジストとの反応が生じないように、プロセス温度を
低下させると、透磁率が向上せず、記録再生出力は低
い。したがつて、本発明によらなければ高性能のヘツド
を歩留り良く作製できない。
〔発明の効果〕
本発明によれば、高飽和磁束密度を有し、かつ透磁率
の高いCo系非晶質合金を、薄膜磁気ヘツドの上部磁極お
よび下部磁極を構成する磁極材料として使用しても加工
プロセス上の問題が発生しないため、特に記録能力にす
ぐれた薄膜磁気ヘツドを歩留りよく製造することが可能
となる。Description: BACKGROUND OF THE INVENTION The present invention relates to a thin film magnetic head suitable for high-density magnetic recording, and more particularly, to a Co-based non-magnetic head having a high saturation magnetic flux density and at least one of upper and lower magnetic poles. A thin-film magnetic head comprising a crystalline alloy and a metal or alloy layer provided on an upper or lower layer thereof. [Prior art] Conventionally, a NiFe alloy having a saturation magnetic flux density of 1 T has been used as a magnetic material constituting a magnetic pole of a thin-film magnetic head, but a demand for increasing a saturation magnetic flux density to improve recording density is increasing. . For example, the use of a Co-based amorphous alloy film with a saturation flux density of ~ 1.4 T as the magnetic material constituting the magnetic pole of the thin-film magnetic head is shown in the 7th Annual Meeting of the Japan Society of Applied Magnetics, 8PA5. . However, an organic resin such as a photoresist or a resist is used as an insulating layer for electrically and magnetically insulating the upper magnetic film and the lower magnetic film.
No consideration has been given to problems in the processing process on an industrial scale, especially when the Co-based amorphous alloy film is applied to a thin film magnetic head using an inorganic material such as SiO 2 and Al 2 O 3 . [Problems to be Solved by the Invention] The above prior art does not consider the problems in the processing process of the thin-film magnetic head, and the reaction between the Co-based amorphous mixed metal and the organic resin in the high-temperature process. In addition, there has been a problem that a film such as SiO 2 or Al 2 O 3 formed on the Co-based amorphous alloy film is peeled off. SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and to produce a thin-film magnetic head having excellent recording and reproducing efficiency with a high yield. [Means for Solving the Problems] In order to solve the above problems and enable the production of a thin film magnetic head with high recording and reproducing efficiency, the upper magnetic layer and the lower magnetic layer are made of a Co-based amorphous alloy film. This can be achieved by forming the upper or lower layer or both layers as a metal or alloy film so that the Co-based amorphous alloy film does not come into direct contact with the photoresist, the organic resin, or SiO 2 or Al 2 O 3 . [Operation] The present invention provides a processing process in which the upper magnetic pole and the lower magnetic pole of a thin-film magnetic head are each made of a Co-based amorphous alloy, which is a material having a high saturation magnetic flux density, and the upper or lower layer or both layers are made of metal or alloy. It is a solution to the various problems that occur. Here, the metal or alloy film provided on the upper magnetic pole and the lower magnetic pole is made of a polyimide-based resin layer in which a Co-based amorphous alloy is directly an insulating layer, or SiO 2 , Al 2 O 3 or the like which forms a gap layer. It is intended to avoid contact between the polyimide-based resin layer and the Co-based amorphous alloy during the high-temperature process, and to remove SiO 2 and Al 2 O 3 spattered on the Co-based amorphous alloy. It works to prevent it. Accordingly, a thin-film magnetic head having a Co-based amorphous alloy film, which is a high saturation magnetic flux density material, as a main component of the magnetic pole can be manufactured with high yield. Embodiment An embodiment of the present invention will be described below with reference to FIG. First
The figure is a schematic view showing a cross section of a thin-film magnetic head. It should be noted that a conventionally known portion that is not directly related to the present invention, for example, a structure in which the protective layer and the rear portion of the magnetic core are formed as two layers and the like are omitted. The upper and lower magnetic layers 1 and 2 are made of Co-Ta-Z
An r-based amorphous alloy film produced by the sputter method,
The thickness is around 1 μm. The base metal layer 7 of the upper magnetic layer and the metal layer 8 of the upper layer of the lower magnetic layer are Cr films, which are also produced by the sputter method, and whose film thickness is changed from 20 ° to 1000 °. The gap layer 3 is made of SiO 2 ,
The insulating layer 4 is made of resist, the substrate 5 is made of ZrO 2 , and the coil 6 is made of copper. FIGS. 2 and 3 show Co-Co-Si with a coercive force of 6000 e and a thickness of 0.16 μm.
Recording and reproduction evaluation was performed using a γFe 2 O 3 sputter disk to show the effects of the present invention. FIG. 2 shows the relationship between the reproduction output at 2 KFCI and the Cr film thickness provided on the upper magnetic layer and the lower magnetic layer when the flying height of the head is 0.2 μm. Here, the vertical axis in FIG. 2 indicates the reproduction output relative value, and relatively expresses the voltage value (mV). FIG. 4 shows the structure of the rear contact portion, in which Ni—Fe is used as a metal (crystalline) layer.
When the soft magnetic alloy is used, the gap length of the rear contact portion becomes zero. In this embodiment, since the rear contacts of the upper and lower magnetic layers are made through the metal layers 7 and 8, the sum of the Cr film thicknesses provided on the upper and lower magnetic layers becomes the gap length in the rear contact portion. From FIG. 2, it can be seen that when the Cr layer thickness is 100 mm or less, the reproduction output does not decrease, and when the Cr layer is not provided even at 500 mm.
It can be seen that a reproduction output of 0% can be obtained. Meanwhile, CoTaZr
If the thickness of the Cr layer provided between the amorphous alloy and the resist is 20 mm or more, a CoTaZr amorphous alloy occurring during a high-temperature process,
Reaction between resists can be suppressed. From the above, the thickness of the metal layer 7 below the upper magnetic layer is desirably about 20 to 100 mm. In addition, a metal layer may be provided between the lower magnetic layer and the substrate, or a metal layer may be provided on the upper magnetic layer to improve adhesion with a protective layer formed thereon. Nb, T besides Cr
i, Ta, V, Rh, Pt, Pd, W, Mo, etc. can also be used.
Even a high temperature process of about 400 ° C. is particularly desirable because it does not react with a resist or react with a CoTaZr alloy to deteriorate magnetic properties. When using other metals, it was necessary to lower the process experience temperature. NiFe alloys are currently used as magnetic pole materials for thin-film heads,
Can also be used. In this case, the rear contact portions of the upper and lower magnetic layers are completely contacted magnetically by the NiFe alloy, so that it is desirable in terms of magnetic characteristics, but the experience temperature of the process needs to be slightly lower. FIG. 3 shows the relationship between the overwrite S / N and the head flying height when the high density signal is 25 KFCI and the low density signal is 5 KFCI. The straight line 11 is a thin film magnetic head prepared according to the present invention, and the thickness of the Cr thin film is 0.05 μm. A straight line 12 is a conventional thin film magnetic head using permalloy as a pole material. Thus, in the thin-film magnetic head prototyped this time, the decrease in overwrite S / N due to the increase in flying height was small, and the flying height was 0.3
Even at μm, the overwrite S / N is 26 dB or more, which clearly shows the effect of using a Co-based amorphous alloy having a large saturation magnetic flux density as the pole material. As the Co-based amorphous alloy, a CoNbZr alloy or a CoWZr alloy can be used in addition to the CoTaZr alloy. Each of these alloys has a composition near zero magnetostriction and has a saturation magnetic flux density of 1.0 T or more, and is higher than the saturation magnetic flux density of the Ni-Fe alloy conventionally used as a magnetic pole material. Can be Other Co-based amorphous alloys, for example, CoMoZr alloys, are not practically desirable in that they do not have a high saturation magnetic flux density and deteriorate overwrite characteristics. In the above embodiment, the effect of the thin-film magnetic head in which the upper magnetic pole and the lower magnetic pole were prototyped as a multilayer structure including a Co-based amorphous alloy layer and a metal layer was shown. On the other hand, the CoTa
As a result of trial production of a thin film magnetic head as a single layer of Zr amorphous film,
During the 400 ° C high temperature process to improve the magnetic permeability, a reaction occurs between the resist and the CoTaZr amorphous film, and the reaction product is CoTa.
The magnetic permeability attached to the Zr amorphous film was not improved due to this reaction, and was about 500.
/ 3 or less. In addition, the problem that the SiO 2 film formed on the CoTaZr film was peeled off occurred, and the production yield of the head was extremely reduced. If the process temperature is lowered so that the reaction with the resist does not occur, the magnetic permeability does not improve and the recording / reproducing output is low. Therefore, a high-performance head cannot be manufactured with good yield without the present invention. [Effects of the Invention] According to the present invention, a Co-based amorphous alloy having a high saturation magnetic flux density and a high magnetic permeability is used as a magnetic pole material constituting the upper magnetic pole and the lower magnetic pole of the thin-film magnetic head. Since no problem occurs in the processing process, it is possible to manufacture a thin-film magnetic head having particularly excellent recording capability with a high yield.
【図面の簡単な説明】
第１図は本発明の実施例である薄膜磁気ヘツド主要部の
断面図、第２図および第３図は本発明の効果を説明する
ための図、第４図は本発明の実施例である薄膜磁気ヘッ
ド主要部の後部コンタクト部を示す構造図である。
１……上部磁性層、２……下部磁性層、３……磁気ギヤ
ツプ、４……絶縁層、５……基板、６……銅コイル、７
……金属層、８……金属層。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view of a main part of a thin-film magnetic head according to an embodiment of the present invention, FIGS. 2 and 3 are diagrams for explaining the effect of the present invention, and FIG. FIG. 3 is a structural diagram showing a rear contact portion of a main part of the thin film magnetic head according to the embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Upper magnetic layer, 2 ... Lower magnetic layer, 3 ... Magnetic gap, 4 ... Insulating layer, 5 ... Substrate, 6 ... Copper coil, 7
...... metal layer, 8 ... metal layer.
フロントページの続き (72)発明者 椎木 一夫 国分寺市東恋ヶ窪１丁目280番地 株式 会社日立製作所中央研究所内 (72)発明者 大友 茂一 国分寺市東恋ヶ窪１丁目280番地 株式 会社日立製作所中央研究所内 (72)発明者 熊坂 登行 国分寺市東恋ヶ窪１丁目280番地 株式 会社日立製作所中央研究所内 (56)参考文献 特開 昭59−231723（ＪＰ，Ａ) 特開 昭61−34707（ＪＰ，Ａ)Continuation of front page (72) Inventor Kazuo Shiiki 1-280 Higashi Koigabo, Kokubunji-shi Central Research Laboratory, Hitachi, Ltd. (72) Inventor Shigeichi Otomo 1-280 Higashi Koigabo, Kokubunji-shi Central Research Laboratory, Hitachi, Ltd. (72) Inventor Noboru Kumasaka 1-280 Higashi Koigabo, Kokubunji-shi Central Research Laboratory, Hitachi, Ltd. (56) References JP-A-59-231723 (JP, A) JP-A-61-34707 (JP, A)
Claims (1)
極と上部磁極とよりなる磁気コア、両磁極を構成する上
下磁性層を電気的、磁気的に分離するギャップ層または
絶縁層、該絶縁層内にあって信号の入出力を行なうコイ
ル、および該基板上にあって該コイルと外部からの配線
とを電気的に接続する２本の引き出し線を有して構成し
た薄膜磁気ヘッドにおいて、該上部磁性層および下部磁
性層の少なくとも一方が、Co系非晶質合金膜からなり、
該上部磁性層の下層又は両層および／または該下部磁性
層の上層又は両層がCr,Nb,Ti,Ta,V,Rh,Pt,Pd,WまたはMo
から成る金属層であり、該金属層の厚みが合計で20Å以
上500Å以下であり、該上下磁性層に設けられた金属層
の膜厚の和が後部コンタクト部におけるギャップ長とな
ることを特徴とする薄膜磁気ヘッド。 ２．特許請求の範囲第１項記載の薄膜磁気ヘッドにおい
て、上部磁極および／または下部磁極を構成するCo系非
晶質合金膜は、Co−Ta−Zr,Co−Nb−Zr,Co−Ｗ−Zrを生
成分とする合金のいずれかであることを特徴とする薄膜
磁気ヘッド。(57) [Claims] A magnetic layer formed on a substrate to form a lower magnetic pole, a magnetic core comprising the lower magnetic pole and the upper magnetic pole, a gap layer or an insulating layer for electrically and magnetically separating the upper and lower magnetic layers constituting both magnetic poles, A thin-film magnetic head comprising a coil in the layer for inputting / outputting a signal and two lead lines on the substrate for electrically connecting the coil to external wiring; At least one of the upper magnetic layer and the lower magnetic layer is made of a Co-based amorphous alloy film,
The lower layer or both layers of the upper magnetic layer and / or the upper layer or both layers of the lower magnetic layer are Cr, Nb, Ti, Ta, V, Rh, Pt, Pd, W or Mo.
Wherein the total thickness of the metal layers is 20 to 500 mm, and the sum of the thicknesses of the metal layers provided in the upper and lower magnetic layers is the gap length in the rear contact portion. Thin film magnetic head. 2. 2. The thin film magnetic head according to claim 1, wherein the Co-based amorphous alloy film forming the upper magnetic pole and / or the lower magnetic pole comprises Co-Ta-Zr, Co-Nb-Zr, Co-W-Zr. Characterized in that the thin film magnetic head is made of any of the following alloys:
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61195383A JP2664139B2 (en) | 1986-08-22 | 1986-08-22 | Thin film magnetic head |
| US07/085,719 US4943879A (en) | 1986-08-22 | 1987-08-17 | Thin film magnetic head including magnetic layers having high saturation magnetic flux density and metal film for avoiding deterioration during manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61195383A JP2664139B2 (en) | 1986-08-22 | 1986-08-22 | Thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6353707A JPS6353707A (en) | 1988-03-08 |
| JP2664139B2 true JP2664139B2 (en) | 1997-10-15 |
Family
ID=16340251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61195383A Expired - Fee Related JP2664139B2 (en) | 1986-08-22 | 1986-08-22 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2664139B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59231723A (en) * | 1983-06-13 | 1984-12-26 | Matsushita Electric Ind Co Ltd | Thin film magnetic head |
| JPH0766495B2 (en) * | 1984-07-27 | 1995-07-19 | 株式会社日立製作所 | Magnetic head |
-
1986
- 1986-08-22 JP JP61195383A patent/JP2664139B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6353707A (en) | 1988-03-08 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |