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JPS60106337U - semiconductor equipment - Google Patents

semiconductor equipment

Info

Publication number
JPS60106337U
JPS60106337U JP19813483U JP19813483U JPS60106337U JP S60106337 U JPS60106337 U JP S60106337U JP 19813483 U JP19813483 U JP 19813483U JP 19813483 U JP19813483 U JP 19813483U JP S60106337 U JPS60106337 U JP S60106337U
Authority
JP
Japan
Prior art keywords
recess
electrode wiring
semiconductor equipment
semiconductor
directly connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19813483U
Other languages
Japanese (ja)
Inventor
貴光 内藤
上野 公二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19813483U priority Critical patent/JPS60106337U/en
Publication of JPS60106337U publication Critical patent/JPS60106337U/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05073Single internal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は静電パルスによる素子破壊を説明する断面図、
第2図は本考案の実施例を示す断面図、第3図は不具合
な例の説明図、第4図〜第6図は本考案の異なる適用例
を示す断面図である。 図面で、10,12.14は半導体基板、2゜は電極配
線、22はくぼみの先端である。
Figure 1 is a cross-sectional view illustrating element destruction due to electrostatic pulse.
FIG. 2 is a sectional view showing an embodiment of the present invention, FIG. 3 is an explanatory diagram of a defective example, and FIGS. 4 to 6 are sectional views showing different examples of application of the present invention. In the drawing, 10, 12, and 14 are semiconductor substrates, 2° is an electrode wiring, and 22 is the tip of a recess.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体素子が形成された半導体基板、および該基板に被
着されそして外部端子ピンに直接接続される電極配線を
備える半導体装置において、該外部端子ピンに直接接続
する電極配線が被着する半導体基板部分にはくぼみが形
成され、該くぼみの全面に該電極配線を被着形成されて
なることを特徴とする半導体装置。
In a semiconductor device comprising a semiconductor substrate on which a semiconductor element is formed, and an electrode wiring attached to the substrate and directly connected to an external terminal pin, a portion of the semiconductor substrate to which the electrode wiring directly connected to the external terminal pin is attached. 1. A semiconductor device characterized in that a recess is formed in the recess, and the electrode wiring is formed over the entire surface of the recess.
JP19813483U 1983-12-23 1983-12-23 semiconductor equipment Pending JPS60106337U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19813483U JPS60106337U (en) 1983-12-23 1983-12-23 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19813483U JPS60106337U (en) 1983-12-23 1983-12-23 semiconductor equipment

Publications (1)

Publication Number Publication Date
JPS60106337U true JPS60106337U (en) 1985-07-19

Family

ID=30756863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19813483U Pending JPS60106337U (en) 1983-12-23 1983-12-23 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS60106337U (en)

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