JPS599920A - Preparation of partial grating - Google Patents
Preparation of partial gratingInfo
- Publication number
- JPS599920A JPS599920A JP11945382A JP11945382A JPS599920A JP S599920 A JPS599920 A JP S599920A JP 11945382 A JP11945382 A JP 11945382A JP 11945382 A JP11945382 A JP 11945382A JP S599920 A JPS599920 A JP S599920A
- Authority
- JP
- Japan
- Prior art keywords
- resist film
- grating
- substrate
- negative resist
- gratings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000010894 electron beam technology Methods 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000005305 interferometry Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、簡単な工程で基板上の所望の部分にのみグレ
ーティングを作製する局所的グレーティング作製方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a local grating manufacturing method for manufacturing a grating only on a desired portion of a substrate through simple steps.
グレーティングは、光学測定器に使用されるだけでなく
、ＤＦＢ 、ＤＢＨなどの半導体レーザ、光カツプラ−
、分波器、合波器などにも使用されている。グレーティ
ングを基板全面に作製する方法は数多くの公知事例があ
るが、基板の所望の位置に局所的にグレーティングを作
製する方法としては電子ビームによる直接描画および基
板を直接マスクで覆って干渉法で露光するなどの方法が
ある。Gratings are used not only in optical measuring instruments, but also in semiconductor lasers such as DFB and DBH, and optical couplers.
It is also used in demultiplexers, multiplexers, etc. There are many known methods for fabricating gratings on the entire surface of a substrate, but methods for fabricating gratings locally at desired positions on a substrate include direct writing with an electron beam and exposure using interferometry with the substrate directly covered with a mask. There are ways to do this.
しかし、電子ビームによる直接描画では基板上の所望の
位置を検索するのが大変困難であるだめ、精密な位置合
せを必要とする局所的グレーティングを作製することは
困難である。まだ、基板を直接マスクで覆って干渉法で
露光する方法では、精密な位置合せが困難なうえに、グ
レーティングの周辺部が干渉により乱れるという欠点が
ある。However, with direct writing using an electron beam, it is very difficult to find a desired position on the substrate, and therefore it is difficult to fabricate localized gratings that require precise alignment. However, the method of directly covering the substrate with a mask and exposing it by interferometry has the disadvantage that precise alignment is difficult and the peripheral area of the grating is disturbed due to interference.
本発明は、前述のように従来では困難であった局所的グ
レーティング形成のだめの精密な位置合せ精度および寸
法精度を有し、グレーティング作製部分以外の基板には
何ら影響を与えないという局所的グレーティングを作製
する局所的グレーティング作製方法を提供することを目
的とするものである。As mentioned above, the present invention has precise positioning accuracy and dimensional accuracy for local grating formation, which has been difficult in the past, and has no effect on the substrate other than the grating fabrication area. It is an object of the present invention to provide a method for producing a localized grating.
本発明の局所的グレーティング作製方法は、基板上にネ
ガ型レジスト膜を形成する工程と、前記ネガ型レジスト
膜にマスク合せを行いグレーティング形成予定部分以外
の前記ネガ型レジスト膜を露光する工程と、前記ネガ型
レジスト膜にグレーティング形成のだめの露光を行う工
程と、前記露光工程を終えたネガ型レジスト膜を現像す
る工程と、前記現像を終えたネガ型レジスト膜をエツチ
ングマスクとして前記基板をエツチングする工程とを含
むことを特徴とするものである。The local grating production method of the present invention includes a step of forming a negative resist film on a substrate, a step of aligning a mask to the negative resist film, and exposing the negative resist film other than the portion where the grating is to be formed. A step of exposing the negative resist film to light for grating formation, a step of developing the negative resist film after the exposure step, and etching the substrate using the developed negative resist film as an etching mask. It is characterized by including a process.
又、本発明の実施態様として、以上述べた方法において
ネガ型レジスト膜にグレーティング形成のだめの露光を
行う工程に、レーザによる干渉露光法または電子ビーム
露光法を用いたことを特徴とするものである。Further, as an embodiment of the present invention, in the method described above, a laser interference exposure method or an electron beam exposure method is used in the step of exposing the negative resist film to light for grating formation. .
以下本発明の実施例について詳細に説明する。Examples of the present invention will be described in detail below.
（実施例１）
第１図（ａ）〜（ｄ）は、本発明の局所的グレーティン
グ作製方法による実施例の工程説明図であり、基板とし
てＳ １０２を用いた例について説明する。寸ず第１図
（ａ）のようにＳｉＯ２基板１上にネガ型レジスト膜２
を形成し、マスク合せを行いグレーティング形成予定部
分以外のネガ形レジスト膜３を露光し第１図（ｂ）のよ
うに硬化させる。(Example 1) FIGS. 1(a) to 1(d) are process explanatory diagrams of an example of the local grating manufacturing method of the present invention, and an example in which S102 is used as the substrate will be described. As shown in Figure 1(a), a negative resist film 2 is deposited on a SiO2 substrate 1.
is formed, masks are aligned, and the negative resist film 3 other than the portion where the grating is to be formed is exposed and hardened as shown in FIG. 1(b).
次に第１図（Ｃ）のようにレーザによる干渉露光法まだ
は電子ビーム露光法を用いネガ形レジスト膜を露光し、
さらに現像することにより未硬化部分４にのみグレーテ
ィング５が形成される。最後に第１図（ｄ）のようにネ
ガ型レジスト膜をエツチングマスクとし、エツチングを
行うことにより、ＳｉＯ２上にグレーティング６を形成
する。以上の工程により、所望の部分のみにグレーティ
ング６を形成することができる。Next, as shown in FIG. 1(C), the negative resist film is exposed using a laser interference exposure method or an electron beam exposure method.
By further developing, the grating 5 is formed only in the uncured portion 4. Finally, as shown in FIG. 1(d), etching is performed using the negative resist film as an etching mask to form a grating 6 on the SiO2. Through the above steps, the grating 6 can be formed only in desired portions.
（実施例２）
第２図（ａ）〜（ｅ）は、本発明による他の実施例の工
程説明図であり、基板として５ｉＯ２を用いた例につい
て説明する。まず第２図体）のように８１０２基板１上
にネガ型レジスト膜２を形成し、レーザによる干渉露光
法または電子ビーム露光法を用い、前記ネガ型レジスト
膜を露光することにより第２図（ｂ）のように格子状の
硬化部分７を形成する。次にマスク合せを行い、グレー
ティング形成予定部分以外のネガレジスト膜のみを露光
し、第２図（Ｃ）のように硬化部分３を形成する。(Example 2) FIGS. 2(a) to 2(e) are process explanatory diagrams of another example according to the present invention, and an example in which 5iO2 is used as the substrate will be described. First, a negative resist film 2 is formed on the 8102 substrate 1 as shown in Figure 2 (B), and the negative resist film is exposed using a laser interference exposure method or an electron beam exposure method. ) A lattice-shaped hardened portion 7 is formed. Next, masks are aligned and only the negative resist film other than the portion where the grating is to be formed is exposed to form a hardened portion 3 as shown in FIG. 2(C).
次に現像により未硬化部分８を除去することにより、第
２図（ｄ）のようにネガ型レジスト膜上にグレーティン
グ５を形成する。Next, by removing the uncured portion 8 by development, a grating 5 is formed on the negative resist film as shown in FIG. 2(d).
最後に第２図（ｅ）のようにネガ型レジスト膜をエツチ
ングマスクとし、エツチングを行うことにより、ＳｉＯ
上にグレーティング６を形成する。以上の工程により、
所望の部分のみにグレーティング６を形成することがで
きる。Finally, as shown in FIG. 2(e), by etching the negative resist film as an etching mask, the SiO
A grating 6 is formed on top. Through the above process,
The grating 6 can be formed only in desired portions.
以上説明したように、本発明の局所的グレーティング作
製方法は公知のマスク合せを含むフォトリングラフィ工
程を応用することにより、所望の部分にのみ簡単にグレ
ーティングを形成することができる。さらに本発明によ
ると、同一基板上の異なった部分に異なった周期、形状
をもつグレーティングを独立に作製することができる。As explained above, the local grating manufacturing method of the present invention can easily form a grating only in a desired portion by applying a photolithography process including well-known mask alignment. Further, according to the present invention, gratings having different periods and shapes can be independently manufactured in different parts on the same substrate.
なお、実施例では基板にＳｉＯ２を用いて説明したが、
これに限ることはない。In addition, although the example was explained using SiO2 for the substrate,
It is not limited to this.
【図面の簡単な説明】
第１図（ａ）〜（ｄ）は、本発明の実施例による局所的
グレーティング作製方法の工程説明図、第２図（ａ）〜
（ｅ）は本発明の他の実施例による局所的グレーティン
グ作製方法の工程説明図である。
１・・・・・・Ｓ ｉＯ２基板、２・・印・ネガ型レジ
スト膜、３・・・・・ネガ型レジスト硬化部分、４・・
印・ネガ型レジスト未硬化部分、５・・・・・・ネガ型
レジストによるグレーティング、６・・・・・５ｉＯ２
グレーテイング、７・・・・・ネガ型レジスト硬化部分
、８・・・・・・ネガ型しレスト未硬化部分。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
？
８
ｂ
」
ｌ
〆
ｒ−一込一−コ
］[BRIEF DESCRIPTION OF THE DRAWINGS] FIGS. 1(a)-(d) are process explanatory diagrams of a local grating manufacturing method according to an embodiment of the present invention, and FIGS. 2(a)-(d) are
(e) is a process explanatory diagram of a local grating manufacturing method according to another embodiment of the present invention. 1...SiO2 substrate, 2...mark negative resist film, 3...cured negative resist part, 4...
Mark: uncured portion of negative resist, 5...Grating by negative resist, 6...5iO2
Grating, 7...Negative resist hardened part, 8...Negative resist uncured part. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2? 8 b ” l 〆r-one piece one-ko]
Claims (3)
記ネガ型レジスト膜にマスク合せを行い、グレーティン
グ形成予定部分以外の前記ネガ型レジスト膜を露光する
工程と、前記ネガ型レジスト膜にグレーティング形成の
だめの露光を行う工程と、前記２つの露光工程を終えた
ネガ型レジスト膜を現像する工程と、前記現像を終えた
ネガ型レジスト膜をエツチングマスクとして前記基板を
エツチングする工程とを含むことを特徴とする局所的グ
レーティング作製方法(1) A step of forming a negative resist film on a substrate, a step of aligning a mask to the negative resist film, and exposing the negative resist film other than the portion where the grating is to be formed; A step of performing a final exposure to form a grating, a step of developing the negative resist film after the two exposure steps, and a step of etching the substrate using the developed negative resist film as an etching mask. A local grating fabrication method characterized by
めの露光を行う工程に、レーザによる干渉露光法を用い
たことを特徴とする特許請求の範囲第１項記載の局所的
グレーティング作製方法(2) The local grating manufacturing method according to claim 1, characterized in that a laser interference exposure method is used in the step of exposing the negative resist film to light for grating formation.
めの露光を行う工程に、電子ビーム露光法を用いたこと
を特徴とする特許請求の範囲第１項記載の局所的グレー
ティング作製方法(3) The local grating manufacturing method according to claim 1, characterized in that an electron beam exposure method is used in the step of exposing the negative resist film to light for grating formation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11945382A JPS599920A (en) | 1982-07-08 | 1982-07-08 | Preparation of partial grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11945382A JPS599920A (en) | 1982-07-08 | 1982-07-08 | Preparation of partial grating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS599920A true JPS599920A (en) | 1984-01-19 |
Family
ID=14761749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11945382A Pending JPS599920A (en) | 1982-07-08 | 1982-07-08 | Preparation of partial grating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS599920A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004019080A2 (en) * | 2002-08-26 | 2004-03-04 | University Of Delaware | Method for fabricating optical devices in photonic crystal structures |
| US8450028B2 (en) * | 2011-03-29 | 2013-05-28 | Sabic Innovative Plastics Ip B.V. | Holographic storage method |
| US9827209B2 (en) * | 2015-02-09 | 2017-11-28 | Microsoft Technology Licensing, Llc | Display system |
| US10018844B2 (en) | 2015-02-09 | 2018-07-10 | Microsoft Technology Licensing, Llc | Wearable image display system |
| US10254942B2 (en) | 2014-07-31 | 2019-04-09 | Microsoft Technology Licensing, Llc | Adaptive sizing and positioning of application windows |
| US10317677B2 (en) | 2015-02-09 | 2019-06-11 | Microsoft Technology Licensing, Llc | Display system |
| US10592080B2 (en) | 2014-07-31 | 2020-03-17 | Microsoft Technology Licensing, Llc | Assisted presentation of application windows |
| US10678412B2 (en) | 2014-07-31 | 2020-06-09 | Microsoft Technology Licensing, Llc | Dynamic joint dividers for application windows |
| US11086216B2 (en) | 2015-02-09 | 2021-08-10 | Microsoft Technology Licensing, Llc | Generating electronic components |
-
1982
- 1982-07-08 JP JP11945382A patent/JPS599920A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004019080A2 (en) * | 2002-08-26 | 2004-03-04 | University Of Delaware | Method for fabricating optical devices in photonic crystal structures |
| WO2004019080A3 (en) * | 2002-08-26 | 2004-06-17 | Univ Delaware | Method for fabricating optical devices in photonic crystal structures |
| US7384724B2 (en) | 2002-08-26 | 2008-06-10 | University Of Delaware | Method for fabricating optical devices in photonic crystal structures |
| US8450028B2 (en) * | 2011-03-29 | 2013-05-28 | Sabic Innovative Plastics Ip B.V. | Holographic storage method |
| US10254942B2 (en) | 2014-07-31 | 2019-04-09 | Microsoft Technology Licensing, Llc | Adaptive sizing and positioning of application windows |
| US10592080B2 (en) | 2014-07-31 | 2020-03-17 | Microsoft Technology Licensing, Llc | Assisted presentation of application windows |
| US10678412B2 (en) | 2014-07-31 | 2020-06-09 | Microsoft Technology Licensing, Llc | Dynamic joint dividers for application windows |
| US9827209B2 (en) * | 2015-02-09 | 2017-11-28 | Microsoft Technology Licensing, Llc | Display system |
| US10018844B2 (en) | 2015-02-09 | 2018-07-10 | Microsoft Technology Licensing, Llc | Wearable image display system |
| US10317677B2 (en) | 2015-02-09 | 2019-06-11 | Microsoft Technology Licensing, Llc | Display system |
| US11086216B2 (en) | 2015-02-09 | 2021-08-10 | Microsoft Technology Licensing, Llc | Generating electronic components |
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