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KR0137618B1 - Photoresist pattern formation method - Google Patents

Photoresist pattern formation method

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Publication number
KR0137618B1
KR0137618B1 KR1019940011682A KR19940011682A KR0137618B1 KR 0137618 B1 KR0137618 B1 KR 0137618B1 KR 1019940011682 A KR1019940011682 A KR 1019940011682A KR 19940011682 A KR19940011682 A KR 19940011682A KR 0137618 B1 KR0137618 B1 KR 0137618B1
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South Korea
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photoresist
pattern
exposed
mask
photoresist pattern
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KR1019940011682A
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Korean (ko)
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KR950033666A (en
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배상만
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김주용
현대전자주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 축소노광장치(i-Line)를 써서 256메가 디램(256M DRAM)급 반도체 소자를 만드는 포토리소그래피(Photo-Lithography) 공정을 통한 감광막 패턴 형성방법에 관한 것으로, 예정된 패턴 형성부위에 제 1감광막(2)을 도포한 다음, 제 1마스크(20)를 씌우고 노광하는 단계; 상기 노광으로 감광막이 제거된 지역(3)에 실리콘을 주입하는 단계; 전체구조 상부에 상기 제 1감광막(2)과 빛에 대한 감응 특성이 반대되는 제 2감광막을 도포한 다음, 제 2마스크(30)를 씌우고 노광하는 단계; 상기 제 2감광막(55)사이의 오픈영역을 통해 아래층의 실리콘이 주입된 제 1감광막(22)을 제거하는 단계; 및 유기 캐미컬을 제거하는 단계를 포함하여 이루어지는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a photosensitive film pattern through a photo-lithography process using a reduced exposure device (i-Line) to make a 256 mega DRAM (256 M DRAM) class semiconductor device. Applying the photoresist film 2, and then covering and exposing the first mask 20; Injecting silicon into the area (3) from which the photoresist film has been removed by the exposure; Applying a first photoresist film (2) and a second photoresist film having opposite sensitivity to light on an entire structure, and then covering and exposing a second mask (30); Removing the first photoresist layer 22 into which silicon of the lower layer is injected through the open region between the second photoresist layer 55; And removing the organic chemicals.

Description

포토레지스트 패턴 형성방법Photoresist pattern formation method

제 1A도 내지 제 1E도는 본 발명에 따른 일실시예의 공정단면도.1A to 1E are process cross-sectional views of one embodiment according to the present invention.

제 2a도 내지 제 2c도는 종래와 본 발명의 마스크를 비교한 마스크 평면도.2A to 2C are mask plan views comparing the mask of the prior art and the present invention.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

2a : 노광된 포지티브 포토레지스트2a: exposed positive photoresist

2b : 비노광된 포지티브 포토레지스트2b: unexposed positive photoresist

2c : 실리레이션된 포지티브 포토레지스트2c: siliced positive photoresist

3a : 노광된 네가티브 포토레지스트3a: exposed negative photoresist

3b : 비노광된 네가티브 포토레지스트3b: unexposed negative photoresist

20 : 제 1마스크20: first mask

30 : 제 2마스크30: second mask

본 발명은 축소노광장치를 사용하여 256메가 디램(256M DRAM)급 반도체 소자를 만드는 포토리소그래피(Photo-Lithography) 공정을 통한 포토레지스트 패턴 형성방법에 관한 것이다.The present invention relates to a method of forming a photoresist pattern through a photo-lithography process of manufacturing a 256-mega DRAM semiconductor device using a reduced exposure apparatus.

현재의 G-line 파장 축소노광장치(디자인룰 약 0.7㎛ 정도)로도 I-line파장 축소노광장치의 실용 해상도 디자인 룰 0.5㎛의 반도체 패턴 형성에 이용할 수도 있다.Even the current G-line wavelength reduction exposure apparatus (about 0.7 µm design rule) can be used to form a semiconductor pattern of 0.5 µm practical resolution design rule of the I-line wavelength reduction exposure apparatus.

리소그라피 공정에 의한 패턴형성의 한계는 레이레이식(Layleigh's Equation)의해 결정되는데, 레이레이식은로 정의되며, R은 해상도, λ는 파장(wave length), NA는 렌즈개구수(numerical aperture)를 의미하고, Ki는 공정에 관련된 상수로서 공정에 따라 변하지만, 양산단계의 수준에서는 0.8정도이다. 상기 레이레이식에서 사용되는 파장을 짧게 할수록 유리함을 알 수 있는데 현재 사용되는 광원은 G-line(λ=0.436㎛)과 I-line(λ=0.365㎛), 원자외선(λ=0.248㎛)으로 파장은 제한되어 있다. 상기 G-line, I-line, 원자외선의 렌즈 개구수 0.5에 대한 해상도 한계는 상기 레이레이식에 의하면 양산단계에 적용할 수 있는 해상도를 기준으로 계산했을 때, 각각 0.7, 0.6, 0.4㎛이다.The limit of pattern formation by lithography process is determined by Rayleigh's Equation. Where R is the resolution, λ is the wavelength, NA is the numerical aperture, and K i is a process-related constant that varies from process to process, but at the level of production to be. It can be seen that the shorter the wavelength used in the ray-ray formula is advantageous, but the light source currently used is G-line (λ = 0.436㎛), I-line (λ = 0.365㎛) and far ultraviolet (λ = 0.248㎛). Is limited. The resolution limit for the lens numerical aperture 0.5 of the G-line, I-line, and far ultraviolet rays is 0.7, 0.6, and 0.4 μm, respectively, based on the resolution applicable to the mass production stage according to the Ray-ray formula. .

따라서 이들의 파장을 가지고 0.25㎛급 디자인 룰을 갖는 256M 디램 반도체를 제조하기 위해서는 초점심도(depth of focus)불량 등 여러 가지 문제점이 발생되고 또한 공정이 복잡하여 양산에 많은 문제점이 따른다.Therefore, in order to manufacture a 256M DRAM semiconductor having a wavelength of 0.25 μm and having a design rule of 0.25 μm, various problems such as a depth of focus defect occur, and the process is complicated, which leads to many problems in mass production.

상기와 같은 문제점을 해결하기 위하여 안출된 본 발명은 기존의 노광장치로도 안정된 미세 패턴을 형성할 수 있는 포토레지스트 패턴 형성방법을 제공하는데 그 목적이 있다.The present invention devised to solve the above problems is an object of the present invention to provide a method for forming a photoresist pattern that can form a stable fine pattern even with a conventional exposure apparatus.

상기 목적을 달성하기 위한 본 발명의 포토레지스트 패턴 형성 방법은, 기판 상에 제 1포토레지스트를 도포한 다음, 노광된 영역과 비노광된 영역을 갖도록 상기 제 1포토레지스트를 선택적으로 노광하는 단계; 상기 노광된 제 1포토레지스트에 실리콘을 주입하여 실리레이션하는 단계; 상기 제 1포토레지스트의 실리레이션 영역 일부가 노출되도록 오픈부를 갖는 제 2포토레지스트 패턴을 상기 제 1포토레지스트 상에 형성하는 단계; 상기 오픈부에 의해 노출된 제 1포토레지스트의 일부 실리케이션 영역을 상기 제 2포토레지스트 패턴을 식각 마스크하여 식각하는 단계; 및 잔류하는 상기 제 1포토레지스트의 실리레이션 영역이 남도록 상기 제 2포토레지스트 패턴 및 상기 비노광된 제 1포토레지스트를 제거하는 단계를 포함하여 이루어진다.A method of forming a photoresist pattern of the present invention for achieving the above object comprises the steps of: applying a first photoresist on a substrate and then selectively exposing the first photoresist to have an exposed area and an unexposed area; Injecting silicon into the exposed first photoresist; Forming a second photoresist pattern on the first photoresist, the second photoresist pattern having an open portion to expose a portion of the silicide region of the first photoresist; Etching a portion of the first photoresist exposed by the open part by etching the second photoresist pattern; And removing the second photoresist pattern and the unexposed first photoresist such that the silicide region of the first photoresist remains.

이하, 첨부된 도면을 참조하여 본 발명을 상술한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

본 발명은 종래의 고밀도 마스크를 스페이스폭을 크게한 두개의 마스크로 분리제작한 다음, 이 분리된 2개의 마스크를 사용하여 실리레이션(Silylation)공정과, 네거티브 감광수지(Negative Photo Resist)더블 코팅(Coating)공정과 함께 미세패턴을 형성하는 방법이다.The present invention separates and manufactures a conventional high density mask into two masks having a large space width, and then uses the separated two masks for a Silation process and a negative photoresist double coating ( It is a method of forming a fine pattern together with a coating process.

즉, 제 2a도에 도시된 바와 같이 크롬패턴(11)간의 스페이스가 매우 좁은 종래의 마스크(10)를, 제 2b도 및 제 2c도와 같이 제 1 및 제 2마스크(20, 30)로 분리 제작하여 크롬패턴(21, 31)간의 스페이스가 넓게 제작한 다음, 실리레이션공정과, 2층의 포토레지스트 공정을 실시하여 미세 패턴을 형성하는 것이다.That is, as shown in FIG. 2A, the conventional mask 10 having a very narrow space between the chrome patterns 11 is separated into the first and second masks 20 and 30 as shown in FIGS. 2B and 2C. Then, the space between the chromium patterns 21 and 31 is made wide, and then a fine pattern is formed by performing a silicide process and a two-layer photoresist process.

본 발명의 더블 마스크(Double Mask), 실리레이션 공정, 포토레지스트 더블 코팅으로 이루어진 3단계 공정을 도면 제 1A도 내지 제 1E도를 통하여 상술한다.A three-step process consisting of a double mask, a silicide process, and a photoresist double coating of the present invention will be described in detail with reference to FIGS. 1A to 1E.

먼저, 제 1A도는 기판(1)에 포지티브 포토레지스트(2)를 도포한 다음, 제 1마스크(20)를 이용한 노광공정을 통해, 상기 포지티브 포토레지스트(2)를 선택적으로 노광시킨 상태의 단면도로, 제 1마스크(20)는 노광 빛을 차단하는 크롬패턴(21)이 빛의 회절 현상을 줄일 수 있도록 크롬 패턴 서로간에 넓은 스페이스(종래보다 상대적으로)를 갖고 있으며, 도면에서 2a는 노광된 지역의 포지티브 포토레지스트, 2b는 비노광 지역의 포지티브 포토레지스트를 각각 나타낸다.First, FIG. 1A is a cross-sectional view of a state in which a positive photoresist 2 is applied to a substrate 1 and then the positive photoresist 2 is selectively exposed through an exposure process using a first mask 20. In addition, the first mask 20 has a large space (relative to the conventional) between the chromium patterns so that the chromium pattern 21 for blocking the exposure light can reduce the diffraction phenomenon of the light. The positive photoresist of 2b denotes the positive photoresist of the non-exposed areas, respectively.

이어서, 제 1B도에서와 같이 상기 노광된 포토레지스트(2a)에 실리콘을 주입하는 실리레이션(도면의 2b)공정을 실시하는데, 노광된 포토레지스트(2a)의 표면뿐만 아니라 상기 기판(1)과 맞닿는 계면까지 실리레이션(2b)시킨다.Subsequently, as shown in FIG. 1B, a siliconization process is performed to inject silicon into the exposed photoresist 2a (2b in the drawing), and not only the surface of the exposed photoresist 2a but also the substrate 1 Silicate 2b is carried out to the interface which abuts.

이어서, 제 1C도는 전체 구조 상부에 네거티브 포토레지스트(3)를 도포한 다음, 제 2마스크(30)를 이용한 노광공정을 실시한 상태의 단면도로서, 마찬가지로 제 2마스크(30)는 노광 빛을 차단하는 크롬패턴(31)이 빛의 회절 현상을 줄일 수 있도록 크롬패턴 서로간에 넓은 스페이스를 갖고 있으며, 도면에서 3a는 노광된 지역의 네가티브 포토레지스트, 3b는 비노광 지역의 네가티브 포토레지스트를 각각 나타낸다.　1C is a cross-sectional view of a state in which the negative photoresist 3 is applied over the entire structure and then subjected to an exposure process using the second mask 30. Similarly, the second mask 30 blocks the exposure light. The chromium pattern 31 has a wide space between the chromium patterns so as to reduce the diffraction phenomenon of light. In the drawing, 3a represents a negative photoresist in an exposed area, and 3b represents a negative photoresist in an unexposed area, respectively.

다음으로, 제 1D도는 상기 네가 포토레지스트를 현상하여 비노광 지역의 네가티브 포토레지스트(3b)를 제거한 다음, 이에 의해 오픈된 영역을 통해 아래측의 실리레이션 포지티브 포토레지스트(2c)를 예컨대 O2+F의 건식식각(Dry etch)가스를 사용하여 식각한 상태의 단면도이다. 건식식각시 노광된 지역의 포지티브 포토레지스트(3a)가 마스크 작용을 한다.Next, the 1D turning the you by developing the photoresist to remove the negative photoresist (3b) in the non-exposed area, and then, whereby the silica illustration positive photoresist (2c) of the lower side through the open area by for example O 2 + A cross-sectional view of the etching state using dry etch gas of F. FIG. The positive photoresist 3a in the area exposed during dry etching acts as a mask.

끝으로, 제 1E도는 O2가스에 의해 노광된 지역이 포지티브 포토레지스트(3a)와 비노광된 포지티브 포토레지스트(2b)를 제거한 상태의 단면도로서, Si이 주입되어 실리레이션된 포지티브 포토레지스트(2c)는 그대로 남고 유기(Organic)캐미컬인 수지들(즉, 3a, 2c)만 제거된다.Finally, FIG. 1E is a cross-sectional view of the region exposed by the O 2 gas removing the positive photoresist 3a and the unexposed positive photoresist 2b, and the Si-injected positive photoresist 2c. ) Remains intact and only the organic chemical resins (ie 3a, 2c) are removed.

상기와 같이 이루어지는 본 발명은 두개의 마스크로 분리된 마스크를 사용하여 축소노광장치의 광원파장 길이(λ)의 제한을 극복하고 분해능 이하의 패턴을 분해함으로써 265메가 디램 패턴을 i-Line 축소 노광장치로 제조할 수 있다.The present invention made as described above overcomes the limitation of the light source wavelength length (λ) of the reduced exposure apparatus by using a mask separated into two masks and decomposes a pattern below the resolution to reduce the 265 mega DRAM pattern to i-Line reduced exposure apparatus. It can be prepared as.

Claims (3)

반도체 소자 제조를 위한 포토레지스트 패턴 형성방법에 있어서, 기판 상에 제 1포토레지스트를 도포한 다음, 노광된 영역과 비노광된 영역을 갖도록 상기 제 1포토레지스트를 선택적으로 노광하는 단계; 상기 노광된 제 1포토레지스트에 실리콘을 주입하여 실리레이션하는 단계; 상기 제 1포토레지스트의 실리레이션 영역 일부가 노출되도록 오픈부를 갖는 제 2포토레지스트 패턴을 상기 제 1포토레지스트 상에 형성하는 단계; 상기 오픈부에 의해 노출된 제 1포토레지스트의 일부 실리레이션 영역을 상기 제 2포토레지스트 패턴을 식각 마스크하여 식각하는 단계; 및 잔류하는 상기 제 1포토레지스트의 실리레이션 영역이 남도록 상기 제 2포토레지스트패턴 및 상기 비노광된 제 1포토레지스트를 제거하는 단계를 포함하여 이루어지는 포토레지스트 패턴 형성방법.A method of forming a photoresist pattern for manufacturing a semiconductor device, comprising: applying a first photoresist on a substrate and then selectively exposing the first photoresist to have an exposed area and an unexposed area; Injecting silicon into the exposed first photoresist; Forming a second photoresist pattern on the first photoresist, the second photoresist pattern having an open portion to expose a portion of the silicide region of the first photoresist; Etching a portion of the silicide region of the first photoresist exposed by the opening by etching the second photoresist pattern; And removing the second photoresist pattern and the unexposed first photoresist such that the remaining silicide region of the first photoresist remains. 제 1항에 있어서, 상기 노출된 제 1포토레지스트의 일부 실리레이션 영역을 식각하는 단계는, O2및 F를 포함하는 가스 분위기에서 건식식각으로 이루어지는 포토레지스트 패턴 형성방법.The method of claim 1, wherein the etching of the part of the silicide region of the exposed first photoresist is performed by dry etching in a gas atmosphere including O 2 and F. 3 . 제 2항에 있어서, 상기 제 2포토레지스트 패턴 및 상기 비노광된 제 1포토레지스트를 제거하는 단계는, O2가스 분위기에서 건식식각으로 이루어지는 포토레지스트 패턴 형성방법.The method of claim 2, wherein the removing of the second photoresist pattern and the unexposed first photoresist is performed by dry etching in an O 2 gas atmosphere.
KR1019940011682A 1994-05-27 1994-05-27 Photoresist pattern formation method Expired - Fee Related KR0137618B1 (en)

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