JPS5978787A - Welding method of fine wire - Google Patents
Welding method of fine wireInfo
- Publication number
- JPS5978787A JPS5978787A JP57187554A JP18755482A JPS5978787A JP S5978787 A JPS5978787 A JP S5978787A JP 57187554 A JP57187554 A JP 57187554A JP 18755482 A JP18755482 A JP 18755482A JP S5978787 A JPS5978787 A JP S5978787A
- Authority
- JP
- Japan
- Prior art keywords
- welding
- groove
- welded
- wire
- thin wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/0046—Welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85385—Shape, e.g. interlocking features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
- Laser Beam Processing (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、例えば、電子機器部品のリード細線の溶接に
好適な細線溶接方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a thin wire welding method suitable for, for example, welding thin lead wires of electronic device parts.
最近、電子機器部の実装密度の高密度比、信頼性の向上
及び配線溶接の自動化等に対応するため接合技術は、半
田付けや抵抗溶接代等から電子ビームやレーザ光線等の
非接触熱源全使用して溶接する方法に変シっつぁる。こ
の方法は、高密度エネルギーであるため熱影響部の少な
いきわめ−Ｃ理想的な溶接部組織が得られ、′よた、非
接触であるため自動化も比較的容易でおる。しがし、欠
点としては、〃用１０に対してビームを工１（（芽Ｊ・
〕る七、アンダカットの大きな溶接部となシ強Ｅａｔ
（Ｄ低下が著しい。また、 ＪＫ手形状によっては溶断
に至ることも必見健全な溶接部？得ると占ができない。Recently, in response to the need for higher packaging densities in electronic equipment, improved reliability, and automation of wiring welding, bonding technology has changed from soldering and resistance welding to non-contact heat sources such as electron beams and laser beams. It's strange how to use and weld. Since this method uses high-density energy, an extremely ideal weld structure with a small heat-affected zone can be obtained, and since it is non-contact, it is relatively easy to automate. However, the disadvantage is that the beam is 1
[7] Large undercut welds and strong Eat
(The drop in D is significant.Also, depending on the shape of the JK hand, it may lead to melting.It is also a must-see if the weld is sound.
これに対し、ｗ・静電９７６６１４号のように外周部に
Δ１１ｊ／１ｉ５１径よシも深い溝を設けてこの部多上
にπ山線金挿入して溶融する方法がめるが、この方法は
実ｖＡ作業面では数十ミクロンオーダーのｔ４１１線分
溝に挿入することは難かしく、また、細線の取扱い及び
自動化に対しても不利であり、かつ、溶接結果も１００
％の成功確率はない。一方、特ｉ′ｒ第８５５８９９号
は、１前線ど位置決めし、かつ、溶断を防止するための
ＳＡ起を、蒸着によって形成丈る方法であるが、この場
合は祿径が大きくなると突起の高さを高くしなけれはな
らず、蒸着によってこれを形成することは時間的に不合
理であり実用的ではない。On the other hand, there is a method, as in W. Electrostatics No. 976614, in which a groove as deep as the Δ11j/1i51 diameter is provided on the outer periphery, and π-crest wire gold is inserted and melted on top of this groove, but this method is not practical. On the vA working surface, it is difficult to insert into a T411 line groove on the order of tens of microns, and it is also disadvantageous for handling and automation of thin wires, and the welding result is also 100%.
There is no % chance of success. On the other hand, Special I'r No. 855899 is a method for positioning the first front line and forming the SA in order to prevent fusing by vapor deposition. The thickness must be high, and forming this by vapor deposition is time-consuming and impractical.
本発明は上記の状況に鑑みなされたものであシ、溶接継
手部のＵ溝の形成が簡単、容易で作用工数を低減でき、
良好な溶接部が得られ、自動溶接が可能な細線溶接方法
を提供することを目的としたものである。The present invention has been made in view of the above-mentioned situation, and it is possible to form a U-groove in a welded joint easily and easily, and to reduce the number of man-hours required.
The object of the present invention is to provide a fine wire welding method that provides a good welded area and allows automatic welding.
本発明の細線溶接方法は、被溶接物に細線が挿入可能な
溝を設け、線溝に細線を挿入して該細線と上記被溶接物
とを一体に溶接する場合に、上記被溶接物の溶接しよう
とする位置に深さが上記細線径とほぼ等しく溝低が上記
細線の半径とほぼ等しい上記Ｓを形成し、線溝に上記細
線を加圧挿入し加圧状態で、溶融接合に必要なエネルギ
ーを有する電子ビームまたはレーザビームを照射し細線
と被溶接物とを溶融し溶接する方法である。The fine wire welding method of the present invention provides a groove into which a thin wire can be inserted into the workpiece, and when the fine wire is inserted into the wire groove and the fine wire and the workpiece are welded together, the workpiece is welded. Form the above S at the position to be welded, the depth of which is approximately equal to the diameter of the thin wire, and the groove height approximately equal to the radius of the thin wire, and insert the thin wire into the wire groove under pressure, which is necessary for fusion joining. This is a method of welding by irradiating an electron beam or laser beam with a certain amount of energy to melt and weld the thin wire and the object to be welded.
以下本発明の細線溶接方法を、−実施例音用いて第１図
及び第２図により説明する。第１図は被溶接部のＵ溝に
細線を挿入し押圧しながら溶接する状態の説明図、第２
図は第１図の細線溶接方法によって実際の製品を溶接し
た状態の斜視図である。図において、１は被溶接物、２
は被溶接物１上に形成されたＵ溝であシ、所定の個所に
細線３が完全に挿入できる細線３の直径と同じ深さに形
成され、溝底が細、ｗＪ３の半径と等しく形成されてい
る。即ち、Ｕ溝２の深さは細線３の直径ｄと等しく溝底
は細線３の半径比と等しく形成されている。そして、Ｕ
溝２に細４１Ｊ３ｔ−挿入位置決めし上部から加圧治具
４によシ抑圧した状態で、ビーム照射方向５から電子ビ
ームまたはレーザビームを照射し細線３を被溶接物１に
溶接部６によシ一体化溶接する。即ち、本実施例では、
細線３の直径と深さが同じで、Ｕ溝２の溝底が細ｆＩＭ
３の丸味と一致しているため、細線３を挿入後上部から
抑圧固定した状態で溶接すれば、溶接で最も嫌われる細
線３と被溶接物１とが非接触の状態で溶接することが避
けられる。このため、細線３の溶断の心配は全く無く、
かつ、細線３が完全にＵ溝２に埋ってしまうため溶接強
度を低下させるアンダカット金最小限にすることができ
る。また、Ｕ＃２への細線３の挿入も細線径とほぼ同一
の深さであるため比較的容易である。従って、自動配線
溶接も可能である。一方、Ｕ溝２の形成は、プレス加工
で溶接に十分な程度の溝を作ることが可能である。The fine wire welding method of the present invention will be explained below with reference to FIGS. 1 and 2 using examples. Figure 1 is an explanatory diagram of the state in which a thin wire is inserted into the U-groove of the part to be welded and welded while pressing.
The figure is a perspective view of an actual product welded by the fine wire welding method shown in FIG. 1. In the figure, 1 is the workpiece to be welded, 2
is a U-groove formed on the workpiece 1 to be welded, and is formed to the same depth as the diameter of the thin wire 3 so that the thin wire 3 can be completely inserted into a predetermined location, and the groove bottom is thin and formed equal to the radius of wJ3. has been done. That is, the depth of the U-groove 2 is equal to the diameter d of the thin wire 3, and the groove bottom is formed to be equal to the radius ratio of the thin wire 3. And U
With the thin wire 3 inserted into the groove 2 and positioned and pressed by the pressing jig 4 from above, an electron beam or a laser beam is irradiated from the beam irradiation direction 5 to apply the thin wire 3 to the workpiece 1 at the welding part 6. Weld them together. That is, in this example,
The diameter and depth of the thin wire 3 are the same, and the groove bottom of the U groove 2 is thin fIM.
3, so if welding is performed with the thin wire 3 pressed and fixed from above after insertion, it is possible to avoid welding in a state where the thin wire 3 and the workpiece 1 are not in contact, which is the most disliked in welding. It will be done. Therefore, there is no need to worry about the thin wire 3 melting down.
In addition, since the thin wire 3 is completely buried in the U-groove 2, undercut metal that reduces welding strength can be minimized. Furthermore, insertion of the thin wire 3 into U#2 is relatively easy since the depth is approximately the same as the diameter of the thin wire. Therefore, automatic wiring welding is also possible. On the other hand, the U-groove 2 can be formed by press working to a sufficient extent for welding.
第２図において、７はハイブリッドＩＣの回路基板で、
回路基板７上には半田フロー炉によって半田（（Ｊけさ
れているＦｅ−Ｎｉ製パッド８から０．３蛸φＮｉリー
ド線の細ｍ３’！！：用いて外部接続ターミナル１０に
溶接接続するようになっている。そ鰭の頃ｉ’ｌ ２
全形成しである。Ｕｎ２と、細線３とのクリアランスは
軽圧入程度がよく、パッド８及び外部接続ターミナル１
０のＵ溝２に細線３全挿入し互に接触する圧接状態でビ
ーム金照射し一体溶接する。そして、溶接強度は、溶断
もなく、溝底部から側面にかけて良好な溶融部が見られ
、抵抗溶接と変らない結果が得られた。In Figure 2, 7 is the circuit board of the hybrid IC,
The circuit board 7 is welded to the external connection terminal 10 using solder in a solder flow furnace. It has become. When the fins are I'l 2
It is fully formed. The clearance between Un2 and the thin wire 3 should be a light press-fit, and the pad 8 and external connection terminal 1
The thin wires 3 are fully inserted into the U-groove 2 of No. 0, and are welded together by beam gold irradiation while they are in pressure contact with each other. As for the welding strength, there was no melting, and a good fusion zone was observed from the bottom of the groove to the sides, and the results were the same as those of resistance welding.
第４図は自動配線溶接作業の状態を示し、回路基板７上
のパッド８に対しキャピラリチューブ１２によル案内さ
れる細線３は、キャピラリチューブエ２が固定された自
動制御装置によって駆動し制御される位置決め加圧治具
１３によシＵ溝２に押圧挿入されるようになっている。FIG. 4 shows the state of automatic wiring welding work, in which the thin wire 3 guided by the capillary tube 12 to the pad 8 on the circuit board 7 is driven and controlled by an automatic control device to which the capillary tube 2 is fixed. The positioning and pressing jig 13 is inserted into the U groove 2 under pressure.
そして、位置決め加圧治具１３によって加圧された状態
で、位置決め加圧治具１３の軸線位置にあけられたビー
ム通過用穴１４全通されたビームが照射され、被溶接物
のパッド８とａｂａａとが一体溶接される。Then, while being pressurized by the positioning and pressing jig 13, the beam that has completely passed through the beam passing hole 14 made at the axial position of the positioning and pressing jig 13 is irradiated, and the pad 8 of the workpiece is irradiated with the beam. abaa are integrally welded.
次に位置決め加圧治具１３を上昇させ、外部接続ターミ
ナル１０に溶接するＵ溝２位置まで移動させ、パッド８
に溶接した場合と同様の手順によシ溶接金行なう。溶接
後の細線３の切断は、機械的な切断゛または細線３に直
接ビームを照射することによって可能である。そして、
上記の動作金繰り返えすことによって溶接と配線を自動
的に行なうことができる。この自動溶接の方法において
細線３とＵ溝２を設けであるパッド８及び外部接続り−
ミナルｌＯとの位置合せは、Ｕ溝２が単純でらるため画
像認識技術全応用した数値制御を行えば十分に可能であ
る。Next, the positioning pressure jig 13 is raised and moved to the U groove 2 position where it will be welded to the external connection terminal 10, and the pad 8
Carry out the welding process in the same manner as when welding. The thin wire 3 after welding can be cut by mechanical cutting or by directly irradiating the thin wire 3 with a beam. and,
Welding and wiring can be performed automatically by repeating the above operations. In this automatic welding method, the thin wire 3 and the U-groove 2 are provided on the pad 8 and the external connection.
Since the U-groove 2 is simple, alignment with the terminal lO is sufficiently possible by numerical control using all image recognition techniques.
このように本実施例のａｉｕ線溶接方法においてはプレ
ス加工によｔ）ＵＰｉｋ形成するので作業工数全低減し
て溶接継手部を形成でき、溝底が細線と同形状でＥｌの
深さが細線と同じく形成され、？／ａ線を加圧挿入し加
圧状態でビーム金照射し細線と被溶接物とを溶融し一体
溶接するので、細線と被溶接物とが非接触の状態で溶接
させることが避けられ、細線の溶断のおそれがなく溶接
部６度を低下させるアンダーカット全最小限にし良好な
溶接がイ儲られる。更に、自動配線溶接も可能である。In this way, in the AIU wire welding method of this embodiment, since UPik is formed by press working, the welded joint can be formed with a total reduction in work man-hours, and the groove bottom has the same shape as the fine wire and the depth of El is the same as that of the fine wire. Formed as well as? /A wire is inserted under pressure and beam gold is irradiated under pressure to melt the fine wire and the workpiece and weld them together, so it is possible to avoid welding the fine wire and workpiece in a non-contact state. There is no risk of melting, and undercuts that lower the welding angle by 6 degrees are minimized, allowing for good welding. Furthermore, automatic wiring welding is also possible.
以上記述した如く本発明の細ＩＹｉｌｉｌ浴接方法にお
いてｅ、」１、溶接継手部のり？／＝７の形成が簡単容
易で作業工数全低減でき、良好な溶接部が得られ自動溶
接も容易である効果を有するものである。As described above, in the fine IYilil bath welding method of the present invention, e. /=7 is simple and easy to form, the number of work steps can be completely reduced, a good welded part can be obtained, and automatic welding is easy.
第１図は本発明の細線溶接方法を実施する被溶接部のＵ
溝に細線全挿入し押圧しながら溶接する状態の説明図、
第２図は第１図の方法による溶接後の被溶接品の斜視図
、第３図は第２図の溶接を自動溶接による実施状態の要
部断面図である。
１・・・被溶接物、２・・・Ｕ溝、３・・・細線、４・
・・カロ圧治具、５・・・ビーム照射方向、６・・・溶
接部、１３・・・位第１（２）
第 ２図
力３図Figure 1 shows the U of the part to be welded using the thin wire welding method of the present invention.
An explanatory diagram of the state in which the thin wire is fully inserted into the groove and welded while pressing,
FIG. 2 is a perspective view of the welded workpiece after welding by the method shown in FIG. 1, and FIG. 3 is a sectional view of a main part of the welding process shown in FIG. 2 performed by automatic welding. 1... Workpiece to be welded, 2... U groove, 3... Thin wire, 4...
... Calo pressure jig, 5... Beam irradiation direction, 6... Welding part, 13... Position 1 (2) 2nd drawing force 3
Claims (1)
（１１線を挿入して該細線と上記被溶接物とを一体に溶
接する方法において、上記被溶接物の溶接しようとする
位置に深さが上記細線径とほぼ等しく溝底が上記乳１線
の早径とほぼ等しい上記溝を形成し、該溝に上記細線を
加圧挿入し加圧状態で、溶融接合に必要なエネルギーを
有する電子ビームまだはレーザビームを照射し細線と被
＃接物とを溶融し溶接することｉ／特徴とする細線溶接
方法。1. Welded? A groove into which a thin wire can be inserted is provided in the snout, and one
(In a method of inserting a wire No. 11 and welding the thin wire and the object to be welded together, the bottom of the groove is approximately equal to the diameter of the thin wire at the position where the object to be welded is to be welded) The thin wire is inserted into the groove under pressure, and under pressure, an electron beam or a laser beam having the energy necessary for melting and bonding is irradiated to bond the thin wire and the object to be contacted. A thin wire welding method characterized by melting and welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57187554A JPS5978787A (en) | 1982-10-27 | 1982-10-27 | Welding method of fine wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57187554A JPS5978787A (en) | 1982-10-27 | 1982-10-27 | Welding method of fine wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5978787A true JPS5978787A (en) | 1984-05-07 |
Family
ID=16208106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57187554A Pending JPS5978787A (en) | 1982-10-27 | 1982-10-27 | Welding method of fine wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5978787A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5300755A (en) * | 1991-08-12 | 1994-04-05 | Yazaki Corporation | Structure for welding electrical connecting portions to each other using laser light beam |
| US5452841A (en) * | 1993-07-23 | 1995-09-26 | Nippondenso Co., Ltd. | Wire bonding apparatus and method |
| WO2017208941A1 (en) * | 2016-06-01 | 2017-12-07 | 三菱電機株式会社 | Semiconductor device and method for manufacturing same |
| CN111615024A (en) * | 2019-02-22 | 2020-09-01 | 阿瓦雅公司 | Clip-based speaker retention to a mounting surface |
-
1982
- 1982-10-27 JP JP57187554A patent/JPS5978787A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5300755A (en) * | 1991-08-12 | 1994-04-05 | Yazaki Corporation | Structure for welding electrical connecting portions to each other using laser light beam |
| US5452841A (en) * | 1993-07-23 | 1995-09-26 | Nippondenso Co., Ltd. | Wire bonding apparatus and method |
| WO2017208941A1 (en) * | 2016-06-01 | 2017-12-07 | 三菱電機株式会社 | Semiconductor device and method for manufacturing same |
| CN111615024A (en) * | 2019-02-22 | 2020-09-01 | 阿瓦雅公司 | Clip-based speaker retention to a mounting surface |
| US20220086546A1 (en) * | 2019-02-22 | 2022-03-17 | Avaya Inc. | Clip based speaker retention to a mounting surface |
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