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JPS5974748U - thin film transistor element - Google Patents

thin film transistor element

Info

Publication number
JPS5974748U
JPS5974748U JP17043982U JP17043982U JPS5974748U JP S5974748 U JPS5974748 U JP S5974748U JP 17043982 U JP17043982 U JP 17043982U JP 17043982 U JP17043982 U JP 17043982U JP S5974748 U JPS5974748 U JP S5974748U
Authority
JP
Japan
Prior art keywords
film transistor
thin film
transistor element
electrode
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17043982U
Other languages
Japanese (ja)
Inventor
敏郎 児玉
悟 川井
安宏 那須
高城 信義
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP17043982U priority Critical patent/JPS5974748U/en
Publication of JPS5974748U publication Critical patent/JPS5974748U/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の液晶ディスプレイパネルの駆動素子を説
明するための図、第2図は従来の薄膜トランジスタを説
明するための図、第3図は本考案によル薄膜トランジス
タ素子を説明するための図である。 図面において、10はガラス基板、11はゲート電極、
12は絶縁膜、13はソース電極、14はドレイン電極
、15′は第1の半導体層、15は第2の半導体層をそ
れぞれ示す。
FIG. 1 is a diagram for explaining a conventional driving element of a liquid crystal display panel, FIG. 2 is a diagram for explaining a conventional thin film transistor, and FIG. 3 is a diagram for explaining a thin film transistor element according to the present invention. It is. In the drawing, 10 is a glass substrate, 11 is a gate electrode,
12 is an insulating film, 13 is a source electrode, 14 is a drain electrode, 15' is a first semiconductor layer, and 15 is a second semiconductor layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ゲート電極が形成されたガラス基板の上に絶縁膜及び薄
い半導体層を介してソース電極及びドレイン電極が形成
され、さらにその上に半導体層が形成された薄膜トラン
ジスタにおいて、ゲート電極は蛇行形状をなし、ソース
電極及びドレイン電極はゲート電極をマスクとするセル
フアライメント方式を用いて形成されたものであること
を特徴とする薄膜トランジスタ素子。
In a thin film transistor in which a source electrode and a drain electrode are formed on a glass substrate on which a gate electrode is formed via an insulating film and a thin semiconductor layer, and a semiconductor layer is further formed on the glass substrate, the gate electrode has a meandering shape, A thin film transistor element characterized in that the source electrode and the drain electrode are formed using a self-alignment method using the gate electrode as a mask.
JP17043982U 1982-11-12 1982-11-12 thin film transistor element Pending JPS5974748U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17043982U JPS5974748U (en) 1982-11-12 1982-11-12 thin film transistor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17043982U JPS5974748U (en) 1982-11-12 1982-11-12 thin film transistor element

Publications (1)

Publication Number Publication Date
JPS5974748U true JPS5974748U (en) 1984-05-21

Family

ID=30372081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17043982U Pending JPS5974748U (en) 1982-11-12 1982-11-12 thin film transistor element

Country Status (1)

Country Link
JP (1) JPS5974748U (en)

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