JPH02118954U - - Google Patents
Info
- Publication number
- JPH02118954U JPH02118954U JP2658189U JP2658189U JPH02118954U JP H02118954 U JPH02118954 U JP H02118954U JP 2658189 U JP2658189 U JP 2658189U JP 2658189 U JP2658189 U JP 2658189U JP H02118954 U JPH02118954 U JP H02118954U
- Authority
- JP
- Japan
- Prior art keywords
- source
- semiconductor layer
- thin film
- film transistor
- drain electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
第１図はこの考案の第１実施例である薄膜トラ
ンジスタの拡大断面図、第２図は第２実施例の薄
膜トランジスタの拡大断面図、第３図は従来例を
示す薄膜トランジスタの拡大断面図である。
１……ガラス基板、２……ゲート電極、３……
ゲート絶縁膜、４……半導体層、６……ソース電
極、７……ドレイン電極、１１，１２……遮光ブ
ロツキング層。
FIG. 1 is an enlarged cross-sectional view of a thin film transistor according to a first embodiment of this invention, FIG. 2 is an enlarged cross-sectional view of a thin film transistor according to a second embodiment, and FIG. 3 is an enlarged cross-sectional view of a conventional thin film transistor. 1...Glass substrate, 2...Gate electrode, 3...
Gate insulating film, 4... semiconductor layer, 6... source electrode, 7... drain electrode, 11, 12... light shielding blocking layer.
Claims (1)
、およびソース、ドレイン電極を順に積層してな
る薄膜トランジスタにおいて、 前記ソース、ドレイン電極が互いに対向する箇
所における前記半導体層と前記ソース、ドレイン
電極との間に遮光機能を有するブロツキング層を
形成したことを特徴とする薄膜トランジスタ。[Claims for Utility Model Registration] In a thin film transistor in which a gate electrode, a gate insulating film, a semiconductor layer, and a source and drain electrode are laminated in this order on a substrate, the semiconductor layer and the semiconductor layer at a location where the source and drain electrodes face each other; A thin film transistor characterized in that a blocking layer having a light shielding function is formed between the source and drain electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989026581U JP2560602Y2 (en) | 1989-03-10 | 1989-03-10 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989026581U JP2560602Y2 (en) | 1989-03-10 | 1989-03-10 | Thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02118954U true JPH02118954U (en) | 1990-09-25 |
| JP2560602Y2 JP2560602Y2 (en) | 1998-01-26 |
Family
ID=31248339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989026581U Expired - Lifetime JP2560602Y2 (en) | 1989-03-10 | 1989-03-10 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2560602Y2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012137251A1 (en) * | 2011-04-06 | 2012-10-11 | パナソニック株式会社 | Display device thin film semiconductor device and method of manufacturing same |
| CN103503125A (en) * | 2012-01-20 | 2014-01-08 | 松下电器产业株式会社 | Thin film transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61145870A (en) * | 1984-12-19 | 1986-07-03 | Matsushita Electric Ind Co Ltd | Thin-film field effect transistor and manufacture thereof |
| JPS63157476A (en) * | 1986-12-22 | 1988-06-30 | Seiko Instr & Electronics Ltd | Thin film transistor |
| JPS63237033A (en) * | 1987-03-26 | 1988-10-03 | Seiko Instr & Electronics Ltd | Production of thin film transistor |
-
1989
- 1989-03-10 JP JP1989026581U patent/JP2560602Y2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61145870A (en) * | 1984-12-19 | 1986-07-03 | Matsushita Electric Ind Co Ltd | Thin-film field effect transistor and manufacture thereof |
| JPS63157476A (en) * | 1986-12-22 | 1988-06-30 | Seiko Instr & Electronics Ltd | Thin film transistor |
| JPS63237033A (en) * | 1987-03-26 | 1988-10-03 | Seiko Instr & Electronics Ltd | Production of thin film transistor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012137251A1 (en) * | 2011-04-06 | 2012-10-11 | パナソニック株式会社 | Display device thin film semiconductor device and method of manufacturing same |
| CN103109373A (en) * | 2011-04-06 | 2013-05-15 | 松下电器产业株式会社 | Display device thin film semiconductor device and method of manufacturing same |
| JPWO2012137251A1 (en) * | 2011-04-06 | 2014-07-28 | パナソニック株式会社 | Thin film semiconductor device for display device and manufacturing method thereof |
| JP5649720B2 (en) * | 2011-04-06 | 2015-01-07 | パナソニック株式会社 | Thin film semiconductor device and manufacturing method thereof |
| CN103503125A (en) * | 2012-01-20 | 2014-01-08 | 松下电器产业株式会社 | Thin film transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2560602Y2 (en) | 1998-01-26 |
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