JPS5857908B2 - 薄膜構造体の形成方法 - Google Patents
薄膜構造体の形成方法Info
- Publication number
- JPS5857908B2 JPS5857908B2 JP14790576A JP14790576A JPS5857908B2 JP S5857908 B2 JPS5857908 B2 JP S5857908B2 JP 14790576 A JP14790576 A JP 14790576A JP 14790576 A JP14790576 A JP 14790576A JP S5857908 B2 JPS5857908 B2 JP S5857908B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- lift
- mask
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 50
- 239000010409 thin film Substances 0.000 title description 7
- 239000000463 material Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 49
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000002184 metal Substances 0.000 description 30
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 229910000889 permalloy Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 230000000873 masking effect Effects 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- PQUCIEFHOVEZAU-UHFFFAOYSA-N Diammonium sulfite Chemical compound [NH4+].[NH4+].[O-]S([O-])=O PQUCIEFHOVEZAU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/143—Masks therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Magnetic Heads (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64585275A | 1975-12-31 | 1975-12-31 | |
| US000000645852 | 1975-12-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5285033A JPS5285033A (en) | 1977-07-15 |
| JPS5857908B2 true JPS5857908B2 (ja) | 1983-12-22 |
Family
ID=24590741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14790576A Expired JPS5857908B2 (ja) | 1975-12-31 | 1976-12-10 | 薄膜構造体の形成方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5857908B2 (de) |
| DE (1) | DE2645081C2 (de) |
| FR (1) | FR2337358A1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58102146A (ja) * | 1981-12-14 | 1983-06-17 | Fuji Photo Film Co Ltd | 銀／ハロゲン化銀電極の製造方法 |
| DE3715431A1 (de) * | 1987-05-08 | 1988-11-17 | Siemens Ag | Verfahren zur herstellung eines strukturierten metallkontaktes auf einer halbleiterscheibe |
| JPH0666290B2 (ja) * | 1987-12-29 | 1994-08-24 | 日本電気株式会社 | 半導体装置の製造方法 |
| US7749883B2 (en) | 2007-09-20 | 2010-07-06 | Fry's Metals, Inc. | Electroformed stencils for solar cell front side metallization |
-
1976
- 1976-10-06 DE DE19762645081 patent/DE2645081C2/de not_active Expired
- 1976-11-29 FR FR7636405A patent/FR2337358A1/fr active Granted
- 1976-12-10 JP JP14790576A patent/JPS5857908B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2645081C2 (de) | 1985-10-03 |
| JPS5285033A (en) | 1977-07-15 |
| DE2645081A1 (de) | 1977-07-14 |
| FR2337358A1 (fr) | 1977-07-29 |
| FR2337358B1 (de) | 1982-01-08 |
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