JPS5795896A - Manufacture of diamond parts - Google Patents
Manufacture of diamond partsInfo
- Publication number
- JPS5795896A JPS5795896A JP17285380A JP17285380A JPS5795896A JP S5795896 A JPS5795896 A JP S5795896A JP 17285380 A JP17285380 A JP 17285380A JP 17285380 A JP17285380 A JP 17285380A JP S5795896 A JPS5795896 A JP S5795896A
- Authority
- JP
- Japan
- Prior art keywords
- parts
- ions
- layers
- metal
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 4
- 239000010432 diamond Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- -1 oxygen ions Chemical class 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To manufacture firmly metallized diamond parts without carrying out high temp. treatment by forming thin film layers of a specified metal on the roughened surfaces of diamond parts and irradiating the layers with ions to form electrically conductive coats.
CONSTITUTION: A sample holder 22 holding diamond parts 23 and main electrode 21 provided with a metal 24 such as Ti, Hf, Ta, Nb or Zr or an alloy thereof are placed in a vacuum vessel. After introducing gaseous oxygen into the vessel, a negative high voltage is applied to the holder 22 in a state where a switch 25 is put on the 1 side, and oxygen ions are hit against the surfacey of the parts 23 to roughen the surfaces. The switch 25 is then changed over to the 2 side to apply a negative high voltage to the electrode 21. At the same time, Ar is substituted for the discharge gas, and the metal 24 is vapordeposited by sputtering to form metallic thin film layers on the surfaces of the parts 23. By irradiating the layers with ions, electrically conductive coats are formed on the surfaces of the parts 23.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17285380A JPS5795896A (en) | 1980-12-08 | 1980-12-08 | Manufacture of diamond parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17285380A JPS5795896A (en) | 1980-12-08 | 1980-12-08 | Manufacture of diamond parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5795896A true JPS5795896A (en) | 1982-06-14 |
| JPS6110435B2 JPS6110435B2 (en) | 1986-03-29 |
Family
ID=15949507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17285380A Granted JPS5795896A (en) | 1980-12-08 | 1980-12-08 | Manufacture of diamond parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5795896A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5713775A (en) * | 1995-05-02 | 1998-02-03 | Massachusetts Institute Of Technology | Field emitters of wide-bandgap materials and methods for their fabrication |
-
1980
- 1980-12-08 JP JP17285380A patent/JPS5795896A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5713775A (en) * | 1995-05-02 | 1998-02-03 | Massachusetts Institute Of Technology | Field emitters of wide-bandgap materials and methods for their fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6110435B2 (en) | 1986-03-29 |
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