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JPS5727079A - Manufacture of josephson element of oxide superconductor - Google Patents

Manufacture of josephson element of oxide superconductor

Info

Publication number
JPS5727079A
JPS5727079A JP10208180A JP10208180A JPS5727079A JP S5727079 A JPS5727079 A JP S5727079A JP 10208180 A JP10208180 A JP 10208180A JP 10208180 A JP10208180 A JP 10208180A JP S5727079 A JPS5727079 A JP S5727079A
Authority
JP
Japan
Prior art keywords
layer
superconductive
oxygen
barrier layer
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10208180A
Other languages
Japanese (ja)
Other versions
JPS5846198B2 (en
Inventor
Minoru Suzuki
Toshiaki Murakami
Takahiro Inamura
Takashi Inukai
Yoichi Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55102081A priority Critical patent/JPS5846198B2/en
Publication of JPS5727079A publication Critical patent/JPS5727079A/en
Publication of JPS5846198B2 publication Critical patent/JPS5846198B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To make it possible to manufacture the object wherein a barrier layer comprises a very thin film, by changing the sputtering conditions. CONSTITUTION:The Josephson element is manufactured by using the first process by which a first superconductive layer is formed on a substrate, a second process by which the barrier layer is formed on said superconductive layer, and a third process by which a second superconductive layer is formed on said barrier layer. In the first and third processes, is used a target comprising an oxide superconductive material BaPb1-xBixO3 (0.05<x<0.3). Sputtering is performed in mixed atmosphere of argon and oxygen wherein the rate of oxygen is 30-60% under the atmospheric pressure of 4-10X10<-2> Torr. Then heat treatment is performed and the first superconductive layer is formed. In the second process, a target comprising the oxide superconductive material is used, the sputtering is performed in the mixed atmosphere of argon and oxygen wherein the rate of oxygen is 10% or less under atmospheric pressure of 1-10X10<-2> Torr, and the barrier layer is formed. The second superconductive layer is formed by the same method as the formation of the first conductive layer.
JP55102081A 1980-07-25 1980-07-25 Method for manufacturing oxide superconductor Josephson device Expired JPS5846198B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55102081A JPS5846198B2 (en) 1980-07-25 1980-07-25 Method for manufacturing oxide superconductor Josephson device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55102081A JPS5846198B2 (en) 1980-07-25 1980-07-25 Method for manufacturing oxide superconductor Josephson device

Publications (2)

Publication Number Publication Date
JPS5727079A true JPS5727079A (en) 1982-02-13
JPS5846198B2 JPS5846198B2 (en) 1983-10-14

Family

ID=14317819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55102081A Expired JPS5846198B2 (en) 1980-07-25 1980-07-25 Method for manufacturing oxide superconductor Josephson device

Country Status (1)

Country Link
JP (1) JPS5846198B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427282A (en) * 1987-01-30 1989-01-30 Hitachi Ltd Superconducting device
JPS6446990A (en) * 1987-08-17 1989-02-21 Matsushita Electric Ind Co Ltd Josephson element and manufacture thereof
JPH01205578A (en) * 1988-02-12 1989-08-17 Mitsubishi Electric Corp Superconductive field effect transistor
JPH0284732A (en) * 1988-02-04 1990-03-26 Fujitsu Ltd Method for manufacturing superconductor elements
JPH02234480A (en) * 1989-03-07 1990-09-17 Nec Corp Oxide superconductor tunnel junction device
JPH02260674A (en) * 1989-03-31 1990-10-23 Sumitomo Electric Ind Ltd Tunnel type josephson element and manufacture thereof
US5106822A (en) * 1988-08-29 1992-04-21 Fujitsu Limited Transistor with superconducting collector, base, and emitter separated by non-superconducting barrier layers
US5828079A (en) * 1992-06-29 1998-10-27 Matsushita Electric Industrial Co., Ltd. Field-effect type superconducting device including bi-base oxide compound containing copper

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427282A (en) * 1987-01-30 1989-01-30 Hitachi Ltd Superconducting device
JPS6446990A (en) * 1987-08-17 1989-02-21 Matsushita Electric Ind Co Ltd Josephson element and manufacture thereof
JPH0284732A (en) * 1988-02-04 1990-03-26 Fujitsu Ltd Method for manufacturing superconductor elements
JPH01205578A (en) * 1988-02-12 1989-08-17 Mitsubishi Electric Corp Superconductive field effect transistor
US5106822A (en) * 1988-08-29 1992-04-21 Fujitsu Limited Transistor with superconducting collector, base, and emitter separated by non-superconducting barrier layers
JPH02234480A (en) * 1989-03-07 1990-09-17 Nec Corp Oxide superconductor tunnel junction device
JPH02260674A (en) * 1989-03-31 1990-10-23 Sumitomo Electric Ind Ltd Tunnel type josephson element and manufacture thereof
US5828079A (en) * 1992-06-29 1998-10-27 Matsushita Electric Industrial Co., Ltd. Field-effect type superconducting device including bi-base oxide compound containing copper

Also Published As

Publication number Publication date
JPS5846198B2 (en) 1983-10-14

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