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JPS5790975A - Composite type power transistor - Google Patents

Composite type power transistor

Info

Publication number
JPS5790975A
JPS5790975A JP55167614A JP16761480A JPS5790975A JP S5790975 A JPS5790975 A JP S5790975A JP 55167614 A JP55167614 A JP 55167614A JP 16761480 A JP16761480 A JP 16761480A JP S5790975 A JPS5790975 A JP S5790975A
Authority
JP
Japan
Prior art keywords
transistor
layer
diode
composite type
prepared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55167614A
Other languages
Japanese (ja)
Inventor
Masahiko Aoki
Motofumi Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55167614A priority Critical patent/JPS5790975A/en
Publication of JPS5790975A publication Critical patent/JPS5790975A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Control Of Amplification And Gain Control (AREA)

Abstract

PURPOSE:To manufacture the composite type transistor for an amplitude control circuit easily, and to decrease the variance of characteristics by separating a transistor and a diode formed on a chip by shaping a separating groove reaching a collector layer of the substrate. CONSTITUTION:The triple diffusion NPN transistor is prepared to the N type substrate, one part of a P base layer 3 is etched chemically and the groove reaching the collector high resistance layer 1 is shaped, and the layer 3 is separated from the second base region 4. A film such as a glass protective film 6 is formed in the groove, a substance such as Al is evaporated and each electrode 7-9 of the transistor and a diode electrode 10 are shaped, and the composite type transistor is molded. Accordingly, the transistors having uniform inverse recovery characteristics can be prepared while connecting wiring can be unnecessitated because the transistor and the diode are formed simultaneously on the same chip. The structure can also apply easily to a Darlington connection type transistor for high power.
JP55167614A 1980-11-27 1980-11-27 Composite type power transistor Pending JPS5790975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55167614A JPS5790975A (en) 1980-11-27 1980-11-27 Composite type power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55167614A JPS5790975A (en) 1980-11-27 1980-11-27 Composite type power transistor

Publications (1)

Publication Number Publication Date
JPS5790975A true JPS5790975A (en) 1982-06-05

Family

ID=15853042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55167614A Pending JPS5790975A (en) 1980-11-27 1980-11-27 Composite type power transistor

Country Status (1)

Country Link
JP (1) JPS5790975A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136354A (en) * 1989-04-13 1992-08-04 Seiko Epson Corporation Semiconductor device wafer with interlayer insulating film covering the scribe lines
US5414297A (en) * 1989-04-13 1995-05-09 Seiko Epson Corporation Semiconductor device chip with interlayer insulating film covering the scribe lines
CN106783982A (en) * 2016-12-29 2017-05-31 西安电子科技大学 A kind of integrated form high pressure carbon SiClx Darlington transistor and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136354A (en) * 1989-04-13 1992-08-04 Seiko Epson Corporation Semiconductor device wafer with interlayer insulating film covering the scribe lines
US5414297A (en) * 1989-04-13 1995-05-09 Seiko Epson Corporation Semiconductor device chip with interlayer insulating film covering the scribe lines
CN106783982A (en) * 2016-12-29 2017-05-31 西安电子科技大学 A kind of integrated form high pressure carbon SiClx Darlington transistor and preparation method thereof
CN106783982B (en) * 2016-12-29 2019-12-06 西安电子科技大学 Integrated high-pressure silicon carbide Darlington tube and manufacturing method thereof

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