JPS5739573A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5739573A JPS5739573A JP55114498A JP11449880A JPS5739573A JP S5739573 A JPS5739573 A JP S5739573A JP 55114498 A JP55114498 A JP 55114498A JP 11449880 A JP11449880 A JP 11449880A JP S5739573 A JPS5739573 A JP S5739573A
- Authority
- JP
- Japan
- Prior art keywords
- region
- base
- type
- collector
- rho
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To overcome the upper limit of frequency due to the base resistace in a semiconductor device such as, a bipolar transistor by providing a relation of rho>1/2piepsilonf0 between the resistivity rho of the base region and the main operating frequency f0. CONSTITUTION:An N<+> type buried collector 12, an n<+> type collector pickup region 17, an n<-> base and collector high resistance region 13, a p<+> type base pickup region 14, a p type base region 15 and an n<+> type emitter region 16 are respectively formed on a p type substrate 11. The base region 15 is so formed that the resistivity rho of the base region is higher than 1/2piepsilonf0 with respect to the predetermined operating frequency f0.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55114498A JPS5739573A (en) | 1980-08-20 | 1980-08-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55114498A JPS5739573A (en) | 1980-08-20 | 1980-08-20 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5739573A true JPS5739573A (en) | 1982-03-04 |
JPH0131312B2 JPH0131312B2 (en) | 1989-06-26 |
Family
ID=14639253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55114498A Granted JPS5739573A (en) | 1980-08-20 | 1980-08-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5739573A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53102661A (en) * | 1977-02-18 | 1978-09-07 | Handotai Kenkyu Shinkokai | Semiconductor ic |
JPS53112072A (en) * | 1977-03-11 | 1978-09-30 | Handotai Kenkyu Shinkokai | Semiconductor ic |
-
1980
- 1980-08-20 JP JP55114498A patent/JPS5739573A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53102661A (en) * | 1977-02-18 | 1978-09-07 | Handotai Kenkyu Shinkokai | Semiconductor ic |
JPS53112072A (en) * | 1977-03-11 | 1978-09-30 | Handotai Kenkyu Shinkokai | Semiconductor ic |
Also Published As
Publication number | Publication date |
---|---|
JPH0131312B2 (en) | 1989-06-26 |
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