JPS5710963A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5710963A JPS5710963A JP8524580A JP8524580A JPS5710963A JP S5710963 A JPS5710963 A JP S5710963A JP 8524580 A JP8524580 A JP 8524580A JP 8524580 A JP8524580 A JP 8524580A JP S5710963 A JPS5710963 A JP S5710963A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- collector
- base
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a complementary type transistor, by forming a PNP transistor from a P type semiconductor substrate as a collector, an N type burried layer as a base, and the P type region disposed in the epitaxial layer above the N type burried layer. CONSTITUTION:The collector of a PNP transistor is formed from a P type semiconductor substrate 1 and a collector contact region 7; the base thereof from N type buried layers 2 and 4 in the semiconductor substrate and an N type base contact region 9; and the emitter thereof from a P type region 6 disposed in an epitaxial layer and above the N type buried layer 4. On the other hand, the collector of an NPN transistor is formed from an N type buried region 3, the epitaxial layer 5 and a collector contact region 10; the base thereof from a P type region 11 formed by introducing a P type impurity into the epitaxial layer; and the emitter thereof from an N type region 12 formed by introducing an N type impurity into the P type region 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8524580A JPS5710963A (en) | 1980-06-25 | 1980-06-25 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8524580A JPS5710963A (en) | 1980-06-25 | 1980-06-25 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5710963A true JPS5710963A (en) | 1982-01-20 |
Family
ID=13853172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8524580A Pending JPS5710963A (en) | 1980-06-25 | 1980-06-25 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710963A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990013916A1 (en) * | 1989-05-10 | 1990-11-15 | Oki Electric Industry Co., Ltd. | Method of fabricating semiconductor devices |
| US6114746A (en) * | 1995-07-27 | 2000-09-05 | Consorzio Per La Ricerca Sullla Microelettronica Nel Mezzogiorno | Vertical PNP transistor and relative fabrication method |
-
1980
- 1980-06-25 JP JP8524580A patent/JPS5710963A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990013916A1 (en) * | 1989-05-10 | 1990-11-15 | Oki Electric Industry Co., Ltd. | Method of fabricating semiconductor devices |
| US5219768A (en) * | 1989-05-10 | 1993-06-15 | Oki Electric Industry Co., Ltd. | Method for fabricating a semiconductor device |
| EP0428738B1 (en) * | 1989-05-10 | 1995-08-30 | Oki Electric Industry Company, Limited | Method of making complementary semiconductor integrated circuit devices |
| US6114746A (en) * | 1995-07-27 | 2000-09-05 | Consorzio Per La Ricerca Sullla Microelettronica Nel Mezzogiorno | Vertical PNP transistor and relative fabrication method |
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