JPS5780734A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5780734A JPS5780734A JP15672280A JP15672280A JPS5780734A JP S5780734 A JPS5780734 A JP S5780734A JP 15672280 A JP15672280 A JP 15672280A JP 15672280 A JP15672280 A JP 15672280A JP S5780734 A JPS5780734 A JP S5780734A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- sio2
- substrate
- semiconductor device
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 229920005591 polysilicon Polymers 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 230000007547 defect Effects 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To obtain a semiconductor device having preferable characteristics by selectively oxidizing P-adding polysilicon on an Si substrate, thereby forming an element isolating layer for remarkably short time. CONSTITUTION:An SiO2 2 and a polysilicon 3 are superposed on a P type Si substrate 1, an Si3N4 mask 4 is provided, and P 5 is added. Further, B ions are injected to form P<+> type channel stopper 6. Then, a thick interelement isolating SiO2 7 is formed by short oxidiation. Subsequently the mask 4 is removed, the polysilicon 3' is opened vertically by reactive sputter ion etching, and polysilicon 3'' remains at the overhang of the thick film 7. The SiO2 2 is removed, a gate oxidized film 8 is formed, and an MOSFET is completed by the ordinary method. According to this structure, the selective oxidation time can be remarkably shortened, the thermal influence to the Si substrate and the stress can be suppresed, thereby largely reducing the defects. Accordingly, defects in the depletion layer between the channel stopper and N<+> type layer can be reduced, thereby obtaining a semiconductor device of the prescribed characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15672280A JPS5780734A (en) | 1980-11-07 | 1980-11-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15672280A JPS5780734A (en) | 1980-11-07 | 1980-11-07 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5780734A true JPS5780734A (en) | 1982-05-20 |
Family
ID=15633899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15672280A Pending JPS5780734A (en) | 1980-11-07 | 1980-11-07 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5780734A (en) |
-
1980
- 1980-11-07 JP JP15672280A patent/JPS5780734A/en active Pending
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