JPS5748820A - Surface acoustic wave element - Google Patents
Surface acoustic wave elementInfo
- Publication number
- JPS5748820A JPS5748820A JP12382780A JP12382780A JPS5748820A JP S5748820 A JPS5748820 A JP S5748820A JP 12382780 A JP12382780 A JP 12382780A JP 12382780 A JP12382780 A JP 12382780A JP S5748820 A JPS5748820 A JP S5748820A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric
- film
- electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 abstract 7
- 239000010408 film Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract 4
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
PURPOSE:to increase the conversion efficiency of a surfce acoustic waves SAW, by forming an electrode of face-centered cubic structure on a piezoelectric film of wurtzite structure with C axis orientation on a substrate, and forming the piezoelectric film of wurtzite structure on it through C axis orientation. CONSTITUTION:A piezoelectric thin film 11 of wurtzite structure such as ZnO, AlN is constituted on a glass substrate 10 with sputtering, and the C axis is oriented almost toward vertical direction as the plane of the substrate 10. The metallic film is formed by vacuum depostion of centered-face cubic structure such as Al and Au on the thin film 11, and the surface acoustic wave electrode is constituted by photoetching this metallic film into a prescribed shape. The piezoelectric material of wurtzite structure such as AlN and ZnO is sputtered on the thin film 11 and the electrode 12 to form a piezoelectric thin film 13. Even on the plane of ZnO, and on the plane of Al, the C axis of the thin film 13 is made easy to be oriented toward vertical direction to the substrate 10, the difference of the slope of orientation of the thin film 13 on the thin film 11 and the electrode 12 is decreased, allowing to increase the conversion efficiency of the surface acoustic waves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12382780A JPS5748820A (en) | 1980-09-05 | 1980-09-05 | Surface acoustic wave element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12382780A JPS5748820A (en) | 1980-09-05 | 1980-09-05 | Surface acoustic wave element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5748820A true JPS5748820A (en) | 1982-03-20 |
Family
ID=14870341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12382780A Pending JPS5748820A (en) | 1980-09-05 | 1980-09-05 | Surface acoustic wave element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5748820A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0348511A (en) * | 1989-04-14 | 1991-03-01 | Murata Mfg Co Ltd | Surface acoustic wave device |
| US5061870A (en) * | 1989-07-06 | 1991-10-29 | Murata Mfg. Co., Ltd. | Surface acoustic wave device |
| KR20020007212A (en) * | 2000-07-19 | 2002-01-26 | 무라타 야스타카 | Thin film, method for manufacturing thin film, and electronic component |
| JP2005136115A (en) * | 2003-10-30 | 2005-05-26 | Tdk Corp | Electronic device and manufacturing method thereof |
| US7642693B2 (en) | 2003-05-15 | 2010-01-05 | National Institute Of Advanced Industrial Science And Technology | Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods |
-
1980
- 1980-09-05 JP JP12382780A patent/JPS5748820A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0348511A (en) * | 1989-04-14 | 1991-03-01 | Murata Mfg Co Ltd | Surface acoustic wave device |
| JP2545983B2 (en) * | 1989-04-14 | 1996-10-23 | 株式会社村田製作所 | Surface acoustic wave device |
| US5061870A (en) * | 1989-07-06 | 1991-10-29 | Murata Mfg. Co., Ltd. | Surface acoustic wave device |
| KR20020007212A (en) * | 2000-07-19 | 2002-01-26 | 무라타 야스타카 | Thin film, method for manufacturing thin film, and electronic component |
| US7642693B2 (en) | 2003-05-15 | 2010-01-05 | National Institute Of Advanced Industrial Science And Technology | Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods |
| JP2005136115A (en) * | 2003-10-30 | 2005-05-26 | Tdk Corp | Electronic device and manufacturing method thereof |
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