JPS57159113A - Surface acoustic wave resonator - Google Patents
Surface acoustic wave resonatorInfo
- Publication number
- JPS57159113A JPS57159113A JP4400881A JP4400881A JPS57159113A JP S57159113 A JPS57159113 A JP S57159113A JP 4400881 A JP4400881 A JP 4400881A JP 4400881 A JP4400881 A JP 4400881A JP S57159113 A JPS57159113 A JP S57159113A
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- deposited film
- layer
- piezoelectric substrate
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
PURPOSE:To improve the reflecting characteristics, by forming a vapor-deposited film made of metal not oxidized than aluminum on one major plane of a piezoelectric substrate, an aluminum vapor-deposited film further on it, and further exciting electrodes and reflecting electrodes. CONSTITUTION:After forming a vapor-deposited film such as nickel or chromium hardly oxidized than high purity aluminum on one major plane of a piezoelectric substrate 11, a high purity aluminum vapor-deposited film is formed on this vapor-deposited film, and exciting electrodes 12 and reflection electrodes 13 and 14 are formed on the two-layered vapor-deposited film by means of photoetching method. Thus, the metal in contacting with the piezoelectric substrate 11 is made of a nickel or chromium layer 16 which is hardly oxidized, and since an oxide 161 of this layer 16 is very less and an oxide 181 of an aluminum layer 18 on the layer 16 is much, the shape of reflecting elements 131 and 141 including oxides 181 and 161 is a cross section of a house with an eaves Further, since a layer 17 is well processed with an etching liquid, an end in contacting with the piezoelectric substrate 11 is almost at a right angle, allowing to improve the reflecting characteristics equivalently.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4400881A JPS57159113A (en) | 1981-03-27 | 1981-03-27 | Surface acoustic wave resonator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4400881A JPS57159113A (en) | 1981-03-27 | 1981-03-27 | Surface acoustic wave resonator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57159113A true JPS57159113A (en) | 1982-10-01 |
Family
ID=12679665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4400881A Pending JPS57159113A (en) | 1981-03-27 | 1981-03-27 | Surface acoustic wave resonator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57159113A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0316409A (en) * | 1989-06-14 | 1991-01-24 | Hitachi Ltd | Surface acoustic wave device and manufacture thereof |
WO2000074235A1 (en) * | 1999-05-31 | 2000-12-07 | Tdk Corporation | Surface acoustic wave device |
-
1981
- 1981-03-27 JP JP4400881A patent/JPS57159113A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0316409A (en) * | 1989-06-14 | 1991-01-24 | Hitachi Ltd | Surface acoustic wave device and manufacture thereof |
WO2000074235A1 (en) * | 1999-05-31 | 2000-12-07 | Tdk Corporation | Surface acoustic wave device |
US6407486B1 (en) | 1999-05-31 | 2002-06-18 | Tdk Corporation | Surface acoustic wave device |
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