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JPS57159113A - Surface acoustic wave resonator - Google Patents

Surface acoustic wave resonator

Info

Publication number
JPS57159113A
JPS57159113A JP4400881A JP4400881A JPS57159113A JP S57159113 A JPS57159113 A JP S57159113A JP 4400881 A JP4400881 A JP 4400881A JP 4400881 A JP4400881 A JP 4400881A JP S57159113 A JPS57159113 A JP S57159113A
Authority
JP
Japan
Prior art keywords
vapor
deposited film
layer
piezoelectric substrate
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4400881A
Other languages
Japanese (ja)
Inventor
Shizuo Tokunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4400881A priority Critical patent/JPS57159113A/en
Publication of JPS57159113A publication Critical patent/JPS57159113A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25Constructional features of resonators using surface acoustic waves

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To improve the reflecting characteristics, by forming a vapor-deposited film made of metal not oxidized than aluminum on one major plane of a piezoelectric substrate, an aluminum vapor-deposited film further on it, and further exciting electrodes and reflecting electrodes. CONSTITUTION:After forming a vapor-deposited film such as nickel or chromium hardly oxidized than high purity aluminum on one major plane of a piezoelectric substrate 11, a high purity aluminum vapor-deposited film is formed on this vapor-deposited film, and exciting electrodes 12 and reflection electrodes 13 and 14 are formed on the two-layered vapor-deposited film by means of photoetching method. Thus, the metal in contacting with the piezoelectric substrate 11 is made of a nickel or chromium layer 16 which is hardly oxidized, and since an oxide 161 of this layer 16 is very less and an oxide 181 of an aluminum layer 18 on the layer 16 is much, the shape of reflecting elements 131 and 141 including oxides 181 and 161 is a cross section of a house with an eaves Further, since a layer 17 is well processed with an etching liquid, an end in contacting with the piezoelectric substrate 11 is almost at a right angle, allowing to improve the reflecting characteristics equivalently.
JP4400881A 1981-03-27 1981-03-27 Surface acoustic wave resonator Pending JPS57159113A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4400881A JPS57159113A (en) 1981-03-27 1981-03-27 Surface acoustic wave resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4400881A JPS57159113A (en) 1981-03-27 1981-03-27 Surface acoustic wave resonator

Publications (1)

Publication Number Publication Date
JPS57159113A true JPS57159113A (en) 1982-10-01

Family

ID=12679665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4400881A Pending JPS57159113A (en) 1981-03-27 1981-03-27 Surface acoustic wave resonator

Country Status (1)

Country Link
JP (1) JPS57159113A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0316409A (en) * 1989-06-14 1991-01-24 Hitachi Ltd Surface acoustic wave device and manufacture thereof
WO2000074235A1 (en) * 1999-05-31 2000-12-07 Tdk Corporation Surface acoustic wave device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0316409A (en) * 1989-06-14 1991-01-24 Hitachi Ltd Surface acoustic wave device and manufacture thereof
WO2000074235A1 (en) * 1999-05-31 2000-12-07 Tdk Corporation Surface acoustic wave device
US6407486B1 (en) 1999-05-31 2002-06-18 Tdk Corporation Surface acoustic wave device

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