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JPS5746387A - Bipolar semiconductor memory device - Google Patents

Bipolar semiconductor memory device

Info

Publication number
JPS5746387A
JPS5746387A JP12206280A JP12206280A JPS5746387A JP S5746387 A JPS5746387 A JP S5746387A JP 12206280 A JP12206280 A JP 12206280A JP 12206280 A JP12206280 A JP 12206280A JP S5746387 A JPS5746387 A JP S5746387A
Authority
JP
Japan
Prior art keywords
turned
memory device
voltage
level shifting
shifting circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12206280A
Other languages
Japanese (ja)
Other versions
JPS6043591B2 (en
Inventor
Yukio Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55122062A priority Critical patent/JPS6043591B2/en
Publication of JPS5746387A publication Critical patent/JPS5746387A/en
Publication of JPS6043591B2 publication Critical patent/JPS6043591B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To realize a high-speed working of a memory device, by providing the thyristor characteristic to a level shifting circuit to be inserted to prevent the device from an erroneous writing during the steady reading action. CONSTITUTION:When the voltage is applied between an input point (a) and an output point (b), an npn type transister (TR) 300 is turned on to flow the base current of a pnp type TR304. Thus the TR304 is turned on. The collector current of the TR304 supplies the base current of the TR300. In other words, both TRs 300 and 302 perfectly turned on, and the voltage between the points (a) and (b) drops. In such way, a level shifting circuit 30a has a noise margin in the steady operation mode and the thyristor characteristic that reduces the impedance in the writing mode is obtained.
JP55122062A 1980-09-02 1980-09-02 Bipolar semiconductor memory device Expired JPS6043591B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55122062A JPS6043591B2 (en) 1980-09-02 1980-09-02 Bipolar semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55122062A JPS6043591B2 (en) 1980-09-02 1980-09-02 Bipolar semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5746387A true JPS5746387A (en) 1982-03-16
JPS6043591B2 JPS6043591B2 (en) 1985-09-28

Family

ID=14826673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55122062A Expired JPS6043591B2 (en) 1980-09-02 1980-09-02 Bipolar semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6043591B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016398U (en) * 1983-07-14 1985-02-04 日本電気株式会社 programmable read-only memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016398U (en) * 1983-07-14 1985-02-04 日本電気株式会社 programmable read-only memory

Also Published As

Publication number Publication date
JPS6043591B2 (en) 1985-09-28

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