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JPS57101424A - Semiconductor circuit - Google Patents

Semiconductor circuit

Info

Publication number
JPS57101424A
JPS57101424A JP55178427A JP17842780A JPS57101424A JP S57101424 A JPS57101424 A JP S57101424A JP 55178427 A JP55178427 A JP 55178427A JP 17842780 A JP17842780 A JP 17842780A JP S57101424 A JPS57101424 A JP S57101424A
Authority
JP
Japan
Prior art keywords
signal
trt1
trt0
base
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55178427A
Other languages
Japanese (ja)
Inventor
Masanori Nakai
Masaki Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55178427A priority Critical patent/JPS57101424A/en
Publication of JPS57101424A publication Critical patent/JPS57101424A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors

Landscapes

  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To operate effectively even at a small input level, by providng a current amplifying transistor at the front stage of a switching transistor (TR). CONSTITUTION:A signal inputted from a signal input terminal 11 is applied to a base of a TRT0 via a protection resistor R0. The conduction of the TRT0 is controlled in response to this signal and a power supply Vcc is applied to the base of TRT1 via a resistor R1. This signal is shunted with a resistor R2 provided between the base and emitter of the said TRT1, the collector circuit of the TRT1 is connected to the circuit 12 of the next stage and the emitter is grounded. With this constitution, a signal applied to the signal input terminal 11 is current-amplified at the TRT0 and the conduction of the TRT1 is controlled with the amplified signal. Thus, the switching of the TRT1 can be made even with a small input signal.
JP55178427A 1980-12-17 1980-12-17 Semiconductor circuit Pending JPS57101424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55178427A JPS57101424A (en) 1980-12-17 1980-12-17 Semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55178427A JPS57101424A (en) 1980-12-17 1980-12-17 Semiconductor circuit

Publications (1)

Publication Number Publication Date
JPS57101424A true JPS57101424A (en) 1982-06-24

Family

ID=16048310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55178427A Pending JPS57101424A (en) 1980-12-17 1980-12-17 Semiconductor circuit

Country Status (1)

Country Link
JP (1) JPS57101424A (en)

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