JPS57100743A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS57100743A JPS57100743A JP55177358A JP17735880A JPS57100743A JP S57100743 A JPS57100743 A JP S57100743A JP 55177358 A JP55177358 A JP 55177358A JP 17735880 A JP17735880 A JP 17735880A JP S57100743 A JPS57100743 A JP S57100743A
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitter
- latch
- potential
- vcc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000003071 parasitic effect Effects 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To effectively prevent the latch-up in a bipolar IC by providing a resistance region between a region becoming an emitter of a parasitic transistor and a power source and always holding the emitter potential of the transistor at a voltage lower than the power potential. CONSTITUTION:In a bipolar IC shown, parasitic transistors Qn, Qp form a parasitic capacitance, causing a latch-up. Accordingly, a p type region 8 connected directly to Vcc is connected via an n<+> diffusion region 15 formed simultaneously upon diffusion of an emitter. That is, an n type resistor Rs 27 is connected in series between the region 8 becoming the emitter of the parasitic transistor Qp 23 and the Vcc, thereby always holding the potential of the region 8 lower than the potential of the Vcc. Thus, even if a latch-up occurs, causing the Qp 23 to become conductive, the voltage is dropped by the Rs 27, thereby eliminating the forward between the emitter and base of the Qp 23. Accordingly, the latch-up is not actually produced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55177358A JPS57100743A (en) | 1980-12-16 | 1980-12-16 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55177358A JPS57100743A (en) | 1980-12-16 | 1980-12-16 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57100743A true JPS57100743A (en) | 1982-06-23 |
JPS6331943B2 JPS6331943B2 (en) | 1988-06-27 |
Family
ID=16029562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55177358A Granted JPS57100743A (en) | 1980-12-16 | 1980-12-16 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57100743A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59191347A (en) * | 1983-04-14 | 1984-10-30 | Sanyo Electric Co Ltd | Semiconductor integrated circuit |
JPS59191346A (en) * | 1983-04-14 | 1984-10-30 | Sanyo Electric Co Ltd | Semiconductor integrated circuit |
JPS59191348A (en) * | 1983-04-14 | 1984-10-30 | Sanyo Electric Co Ltd | Semiconductor integrated circuit |
US5278434A (en) * | 1991-05-30 | 1994-01-11 | Mitsubishi Denki Kabushiki Kaisha | Pressure engagement structure for a full press-pack type semiconductor device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0245158A (en) * | 1988-08-06 | 1990-02-15 | Brother Ind Ltd | Welding method of dot printer head |
JPH0245160A (en) * | 1988-08-05 | 1990-02-15 | Brother Ind Ltd | How to assemble a dot printer head |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51151572U (en) * | 1975-05-27 | 1976-12-03 |
-
1980
- 1980-12-16 JP JP55177358A patent/JPS57100743A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51151572U (en) * | 1975-05-27 | 1976-12-03 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59191347A (en) * | 1983-04-14 | 1984-10-30 | Sanyo Electric Co Ltd | Semiconductor integrated circuit |
JPS59191346A (en) * | 1983-04-14 | 1984-10-30 | Sanyo Electric Co Ltd | Semiconductor integrated circuit |
JPS59191348A (en) * | 1983-04-14 | 1984-10-30 | Sanyo Electric Co Ltd | Semiconductor integrated circuit |
US5278434A (en) * | 1991-05-30 | 1994-01-11 | Mitsubishi Denki Kabushiki Kaisha | Pressure engagement structure for a full press-pack type semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6331943B2 (en) | 1988-06-27 |
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