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JPS5745929A - Grinding method for semiconductor wafer - Google Patents

Grinding method for semiconductor wafer

Info

Publication number
JPS5745929A
JPS5745929A JP12151080A JP12151080A JPS5745929A JP S5745929 A JPS5745929 A JP S5745929A JP 12151080 A JP12151080 A JP 12151080A JP 12151080 A JP12151080 A JP 12151080A JP S5745929 A JPS5745929 A JP S5745929A
Authority
JP
Japan
Prior art keywords
wafer
tape
grinding
semiconductor
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12151080A
Other languages
Japanese (ja)
Inventor
Takumi Matsukura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12151080A priority Critical patent/JPS5745929A/en
Publication of JPS5745929A publication Critical patent/JPS5745929A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To avoid the damage of a semiconductor element and to reduce the number of steps of grinding a semiconductor wafer formed with the semiconductor element on one main surface by bonding an adhesive tape on the element forming surface of the wafer, and grinding the surface faced with the tape, thereby forming the wafer in the desired thickness. CONSTITUTION:A circular adhesive tape 6 approximately equal to a wafer 3 is bonded to the semiconductor element forming surface of the semiconductor wafer 3, the surface of the tape is attracted to a chuck table 7, the back surface of ground by a grinding head 8, and the wafer 3 is formed in a desired thickness. Thereafter, unnecessary tape 6 is exfoliated. In this manner, no damage is produced on the element forming surface, the attachment and detachment of the wafer can be facilitated, thereby improving the productivity.
JP12151080A 1980-09-02 1980-09-02 Grinding method for semiconductor wafer Pending JPS5745929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12151080A JPS5745929A (en) 1980-09-02 1980-09-02 Grinding method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12151080A JPS5745929A (en) 1980-09-02 1980-09-02 Grinding method for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5745929A true JPS5745929A (en) 1982-03-16

Family

ID=14812979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12151080A Pending JPS5745929A (en) 1980-09-02 1980-09-02 Grinding method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5745929A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547764A1 (en) * 1983-06-03 1984-12-28 Ates Componenti Elettron APPARATUS FOR COVERING A PLASTIC FILM FOR PROTECTING SILICON WASHERS WITH A VIEW TO THEIR FINAL RUNNING-IN AND FOR CUTTING SAID FILM ON THE EDGE THEREOF
JPS60189938A (en) * 1984-03-12 1985-09-27 Nitto Electric Ind Co Ltd Protective method of semiconductor wafer
WO1985005734A1 (en) * 1984-05-29 1985-12-19 Mitsui Toatsu Chemicals, Incorporated Film for machining wafers
JPS6110242A (en) * 1984-05-29 1986-01-17 Mitsui Toatsu Chem Inc Film for processing silicon wafer
EP0182218A2 (en) * 1984-11-07 1986-05-28 Kabushiki Kaisha Toshiba Method for dicing semiconductor wafer
JPS61141142A (en) * 1984-12-13 1986-06-28 Toshiba Corp Method for grinding semiconductor wafer
US5665649A (en) * 1993-05-21 1997-09-09 Gardiner Communications Corporation Process for forming a semiconductor device base array and mounting semiconductor devices thereon

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547764A1 (en) * 1983-06-03 1984-12-28 Ates Componenti Elettron APPARATUS FOR COVERING A PLASTIC FILM FOR PROTECTING SILICON WASHERS WITH A VIEW TO THEIR FINAL RUNNING-IN AND FOR CUTTING SAID FILM ON THE EDGE THEREOF
JPS60189938A (en) * 1984-03-12 1985-09-27 Nitto Electric Ind Co Ltd Protective method of semiconductor wafer
WO1985005734A1 (en) * 1984-05-29 1985-12-19 Mitsui Toatsu Chemicals, Incorporated Film for machining wafers
JPS6110242A (en) * 1984-05-29 1986-01-17 Mitsui Toatsu Chem Inc Film for processing silicon wafer
EP0185767A1 (en) * 1984-05-29 1986-07-02 MITSUI TOATSU CHEMICALS, Inc. Film for machining wafers
EP0185767A4 (en) * 1984-05-29 1987-09-02 Mitsui Toatsu Chemicals SEMICONDUCTOR WAFER MACHINING FILM.
US4853286A (en) * 1984-05-29 1989-08-01 Mitsui Toatsu Chemicals, Incorporated Wafer processing film
EP0182218A2 (en) * 1984-11-07 1986-05-28 Kabushiki Kaisha Toshiba Method for dicing semiconductor wafer
JPS61141142A (en) * 1984-12-13 1986-06-28 Toshiba Corp Method for grinding semiconductor wafer
US5665649A (en) * 1993-05-21 1997-09-09 Gardiner Communications Corporation Process for forming a semiconductor device base array and mounting semiconductor devices thereon

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