JPS57197884A - Composite substrate - Google Patents
Composite substrateInfo
- Publication number
- JPS57197884A JPS57197884A JP56083151A JP8315181A JPS57197884A JP S57197884 A JPS57197884 A JP S57197884A JP 56083151 A JP56083151 A JP 56083151A JP 8315181 A JP8315181 A JP 8315181A JP S57197884 A JPS57197884 A JP S57197884A
- Authority
- JP
- Japan
- Prior art keywords
- polished
- bonded
- mechanochemically
- composite substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 239000002131 composite material Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 3
- 229910000765 intermetallic Inorganic materials 0.000 abstract 2
- 239000000696 magnetic material Substances 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 230000002463 transducing effect Effects 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 229910000859 α-Fe Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
PURPOSE:To attain a composite substrate suitable for Hall element with high electron mobility by a method wherein both surfaces of a soft magnetic material and an intermetallic compound semiconductor material are mechanochemically polished, both materials are bonded with each other and then a semiconductor film is polished. CONSTITUTION:One surface of a magnetic material such as a Mn-Zn ferrite substrate 1 is mechanochemically polished, and then an insulative layer 2 of Al2O3 is coated thereon. One surface of an intermetallic compound semiconductor material such as InSb 3 is also mechanochemically polished. The polished surface P1 of a wafer 3 is bonded on the insulative layer 2 of the substrate 1 using adhesives 4. Then, the surface of thus bonded wafer 3 is mechanochemically polished. By so doing, a semiconductor film is formed of a holohedron, thus resulting in electromagnetic transducing Hall elements with high electron mobility.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56083151A JPS57197884A (en) | 1981-05-29 | 1981-05-29 | Composite substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56083151A JPS57197884A (en) | 1981-05-29 | 1981-05-29 | Composite substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57197884A true JPS57197884A (en) | 1982-12-04 |
Family
ID=13794222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56083151A Pending JPS57197884A (en) | 1981-05-29 | 1981-05-29 | Composite substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57197884A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59111321A (en) * | 1982-12-17 | 1984-06-27 | Asahi Chem Ind Co Ltd | Compound semiconductor thin-film structure and its manufacture |
| US4584552A (en) * | 1982-03-26 | 1986-04-22 | Pioneer Electronic Corporation | Hall element with improved composite substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5544787A (en) * | 1978-09-27 | 1980-03-29 | Matsushita Electric Ind Co Ltd | Grinding method |
| JPS5583561A (en) * | 1978-12-12 | 1980-06-24 | Matsushita Electric Ind Co Ltd | Abrasion method of polycrystal material |
-
1981
- 1981-05-29 JP JP56083151A patent/JPS57197884A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5544787A (en) * | 1978-09-27 | 1980-03-29 | Matsushita Electric Ind Co Ltd | Grinding method |
| JPS5583561A (en) * | 1978-12-12 | 1980-06-24 | Matsushita Electric Ind Co Ltd | Abrasion method of polycrystal material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4584552A (en) * | 1982-03-26 | 1986-04-22 | Pioneer Electronic Corporation | Hall element with improved composite substrate |
| JPS59111321A (en) * | 1982-12-17 | 1984-06-27 | Asahi Chem Ind Co Ltd | Compound semiconductor thin-film structure and its manufacture |
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