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JPS5741370A - Continuous sputtering device - Google Patents

Continuous sputtering device

Info

Publication number
JPS5741370A
JPS5741370A JP11707080A JP11707080A JPS5741370A JP S5741370 A JPS5741370 A JP S5741370A JP 11707080 A JP11707080 A JP 11707080A JP 11707080 A JP11707080 A JP 11707080A JP S5741370 A JPS5741370 A JP S5741370A
Authority
JP
Japan
Prior art keywords
chamber
take
chambers
substrates
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11707080A
Other languages
Japanese (ja)
Other versions
JPS609103B2 (en
Inventor
Hideki Tateishi
Tsuneaki Kamei
Katsuo Abe
Hide Kobayashi
Susumu Aiuchi
Masashi Nakatsuka
Nobuyuki Takahashi
Ryuji Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Hitachi Ltd
Original Assignee
Hitachi Ltd
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Anelva Corp filed Critical Hitachi Ltd
Priority to JP11707080A priority Critical patent/JPS609103B2/en
Priority to US06/296,314 priority patent/US4405435A/en
Publication of JPS5741370A publication Critical patent/JPS5741370A/en
Publication of JPS609103B2 publication Critical patent/JPS609103B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To reduce the size of a titled device, and form thin films of stable film quality on substrates with good productivity by providing a take-in chamber, the 1st containing chamber, a sputtering chamber, the 2nd containing chamber and a take-out chamber, and suitably disposing respective treating means. CONSTITUTION:A take-in chamber 52, the 1st containing chamber 53, a sputter etching chamber 54, a sputtering chamber 55, a cooling chamber 56, the 2nd containing chamber 57, and a take-out chamber 58 are arranged in a U shape, and outside containing parts 50, 59 are provided on the outer side of the chambers 52, 58. Gate valves 64, 71, 77, 86, 101, 106, 113, 120 which open only while substrates 3 pass are provided to the side wall on the inlet side of the chamber 52, between the respective chambers and the side wall on the outlet side of the chamber 58. Next, conveyor belts for conveying substrates and exhaust ports 69, 76, 84, 100, 105, 112, 119 connecting to vacuum pumps are provided in the respective chambers. Further, cassette elevators 67, 74, 110, 117 are provided to the chambers 52, 53, 57, 58, and a sputter etching electrode 83 is provided in the chamber 54 and sputtering electrodes 90, 96 are provided in the chamber 55.
JP11707080A 1980-08-27 1980-08-27 Continuous sputtering equipment Expired JPS609103B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11707080A JPS609103B2 (en) 1980-08-27 1980-08-27 Continuous sputtering equipment
US06/296,314 US4405435A (en) 1980-08-27 1981-08-26 Apparatus for performing continuous treatment in vacuum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11707080A JPS609103B2 (en) 1980-08-27 1980-08-27 Continuous sputtering equipment

Publications (2)

Publication Number Publication Date
JPS5741370A true JPS5741370A (en) 1982-03-08
JPS609103B2 JPS609103B2 (en) 1985-03-07

Family

ID=14702666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11707080A Expired JPS609103B2 (en) 1980-08-27 1980-08-27 Continuous sputtering equipment

Country Status (1)

Country Link
JP (1) JPS609103B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60191451A (en) * 1984-03-12 1985-09-28 Daicel Chem Ind Ltd Manufacture of photomagnetic recording medium
JPS61113141A (en) * 1984-11-06 1986-05-31 Toshiba Ii M I Kk Manufacturing system of information recording media
JPS61148646A (en) * 1984-11-30 1986-07-07 Toshiba Ii M I Kk Square circulation type base machine
JPS6253849A (en) * 1985-09-03 1987-03-09 Tdk Corp Manufacture of electrode of thermal head
JPS6280265A (en) * 1985-10-04 1987-04-13 Toshiba Corp Vacuum treatment device
JPS63153288A (en) * 1986-12-17 1988-06-25 Hosiden Electronics Co Ltd Vacuum processing device
JPH0677134A (en) * 1992-08-26 1994-03-18 Nec Kansai Ltd Vacuum heating method
KR100667886B1 (en) 2005-07-01 2007-01-11 주식회사 에스에프에이 Inline sputtering system
JP2010037593A (en) * 2008-08-05 2010-02-18 Toppan Printing Co Ltd Sputtering apparatus and maintenance method therefor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60191451A (en) * 1984-03-12 1985-09-28 Daicel Chem Ind Ltd Manufacture of photomagnetic recording medium
JPS61113141A (en) * 1984-11-06 1986-05-31 Toshiba Ii M I Kk Manufacturing system of information recording media
JPS61148646A (en) * 1984-11-30 1986-07-07 Toshiba Ii M I Kk Square circulation type base machine
JPS6253849A (en) * 1985-09-03 1987-03-09 Tdk Corp Manufacture of electrode of thermal head
JPS6280265A (en) * 1985-10-04 1987-04-13 Toshiba Corp Vacuum treatment device
JPS63153288A (en) * 1986-12-17 1988-06-25 Hosiden Electronics Co Ltd Vacuum processing device
JPH0677134A (en) * 1992-08-26 1994-03-18 Nec Kansai Ltd Vacuum heating method
KR100667886B1 (en) 2005-07-01 2007-01-11 주식회사 에스에프에이 Inline sputtering system
JP2010037593A (en) * 2008-08-05 2010-02-18 Toppan Printing Co Ltd Sputtering apparatus and maintenance method therefor

Also Published As

Publication number Publication date
JPS609103B2 (en) 1985-03-07

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