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JPS5521553A - Device for fabricating film - Google Patents

Device for fabricating film

Info

Publication number
JPS5521553A
JPS5521553A JP9396678A JP9396678A JPS5521553A JP S5521553 A JPS5521553 A JP S5521553A JP 9396678 A JP9396678 A JP 9396678A JP 9396678 A JP9396678 A JP 9396678A JP S5521553 A JPS5521553 A JP S5521553A
Authority
JP
Japan
Prior art keywords
film
chamber
substrate
vacuum
jig
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9396678A
Other languages
Japanese (ja)
Other versions
JPS6123270B2 (en
Inventor
Yoshihiro Hirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP9396678A priority Critical patent/JPS5521553A/en
Publication of JPS5521553A publication Critical patent/JPS5521553A/en
Publication of JPS6123270B2 publication Critical patent/JPS6123270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To provide the subject device wherein, in forming a film on a substate in a vacuum chamber, the substrate is passed through respective processes while fitting the same to a transfer hand, thereby to produce the film of a high quality in a large amount with a high productivity. CONSTITUTION:A jig 22 in which a plurality of substrates 23 are accommodated is introduced in a vacuum chamber 20, and a door 28 is closed. Then, the interior of the vacuum chamber 20 is made vacuum in an exhaust system consisting of a diffusion pump 43 and a trap 42. A high frequency power source 16 is applied to the electrode 11 of a film fabricating chamber 10, and semultaneously the interior of the film fabricating chamber 10 is exhausted in high vacuum by the operation of a rotary pump 58. Then, a sputtering gas is introduced into the chamber 10 from a gas introduction system 52 and discharged to cause a target 13 to be in a sputtering state. A predetermined number of substrates 23 are taken out of the jig 22 by a substrate transfer hand mechanism 30, and transferred into the film fabricating chamber 10 thereby to cause a film of a predetermined thickness to adhere onto the surface. A substrate 23 sputtered for a predetermined tims is again accommodated in the jig 23 while being fitted to a transfer hand 31, and is transferred in any of left and right directions 27, thereafter the subsequent substrate 23 being treated by the above described operations.
JP9396678A 1978-08-01 1978-08-01 Device for fabricating film Granted JPS5521553A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9396678A JPS5521553A (en) 1978-08-01 1978-08-01 Device for fabricating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9396678A JPS5521553A (en) 1978-08-01 1978-08-01 Device for fabricating film

Publications (2)

Publication Number Publication Date
JPS5521553A true JPS5521553A (en) 1980-02-15
JPS6123270B2 JPS6123270B2 (en) 1986-06-05

Family

ID=14097137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9396678A Granted JPS5521553A (en) 1978-08-01 1978-08-01 Device for fabricating film

Country Status (1)

Country Link
JP (1) JPS5521553A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140333A (en) * 1991-06-14 1994-05-20 Semiconductor Energy Lab Co Ltd Method of cleaning plasma processor
JPH08195348A (en) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPH08241867A (en) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd Plasma treatment device and plasma treatment method
KR100390576B1 (en) * 2001-07-31 2003-07-07 한국과학기술원 Apparatus for fabricating thin film
WO2018105427A1 (en) * 2016-12-06 2018-06-14 東京エレクトロン株式会社 Method for forming film on substrate, and film-forming system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5014997A (en) * 1973-06-13 1975-02-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5014997A (en) * 1973-06-13 1975-02-17

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140333A (en) * 1991-06-14 1994-05-20 Semiconductor Energy Lab Co Ltd Method of cleaning plasma processor
JPH0673348B2 (en) * 1991-06-14 1994-09-14 株式会社半導体エネルギー研究所 Cleaning method for plasma processing apparatus
JPH08195348A (en) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPH08241867A (en) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd Plasma treatment device and plasma treatment method
KR100390576B1 (en) * 2001-07-31 2003-07-07 한국과학기술원 Apparatus for fabricating thin film
WO2018105427A1 (en) * 2016-12-06 2018-06-14 東京エレクトロン株式会社 Method for forming film on substrate, and film-forming system

Also Published As

Publication number Publication date
JPS6123270B2 (en) 1986-06-05

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