JPS60191451A - Manufacture of photomagnetic recording medium - Google Patents
Manufacture of photomagnetic recording mediumInfo
- Publication number
- JPS60191451A JPS60191451A JP4555384A JP4555384A JPS60191451A JP S60191451 A JPS60191451 A JP S60191451A JP 4555384 A JP4555384 A JP 4555384A JP 4555384 A JP4555384 A JP 4555384A JP S60191451 A JPS60191451 A JP S60191451A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- substrate
- amorphous alloy
- film thickness
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims abstract description 24
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 23
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 8
- SDVIPADSGIIEHD-UHFFFAOYSA-N cobalt terbium Chemical compound [Co].[Tb] SDVIPADSGIIEHD-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 12
- 238000000992 sputter etching Methods 0.000 abstract description 9
- 238000005530 etching Methods 0.000 abstract description 5
- 229910017052 cobalt Inorganic materials 0.000 abstract description 2
- 239000010941 cobalt Substances 0.000 abstract description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
- 230000005411 photomagnetism Effects 0.000 abstract 1
- 238000001552 radio frequency sputter deposition Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 8
- 230000005415 magnetization Effects 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
Landscapes
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は補償温度記録方式の光磁気記録媒体に関するも
のであり、特に、テルビウム−コバルトアモルファス合
金を磁性記録層とする光磁気記録媒体の製造方法に関す
るものである。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a magneto-optical recording medium using a compensated temperature recording method, and in particular to the production of a magneto-optical recording medium having a magnetic recording layer made of a terbium-cobalt amorphous alloy. It is about the method.
(従来技術)
消去−再記録可能ないわゆるE−IJ R,A W記録
媒体はビデオディスク、オーティオディスク、文書ファ
イル用ディスクあるいはコンピューターの内部まだは外
部メモリーと(〜で種々研究開発が進められている。(Prior art) Erasable and rewritable so-called E-IJR, AW recording media are used for video discs, audio discs, document file discs, internal and external memories of computers, and various research and development efforts are underway on these media. There is.
E−DRAW記録方式には種々のものがあるが、光磁気
記録方式を利用する場合には、記録媒体とj−で主とし
て希十修−遷移金属のアモルファス合金が用いられる。There are various types of E-DRAW recording systems, but when a magneto-optical recording system is used, an amorphous alloy of dilute transition metals is mainly used for the recording medium and j-.
このアモルファス合金には既に多数の組合せが知られて
おり、G (l −Co 、 G d−F e 、 T
b −F e 、 G d −T l) −F e
、 T b −P e −Co等が主として研究されて
いる。これらの光磁気記録媒体は記録方式によってキュ
リー温低記録のものと補償温度記録のものとがあるが、
いずれの方式にせよ、−に記アモルファス合金の磁化t
i面に垂直に配向させる必要があり、この垂直磁化可能
膜は蒸着、スパッタリング等で形成することができる。Many combinations of this amorphous alloy are already known, including G (l-Co, G d-F e, T
b −F e , G d −T l) −F e
, T b -P e -Co, etc. are mainly studied. Depending on the recording method, these magneto-optical recording media are classified into Curie temperature recording and compensated temperature recording.
In either method, the magnetization t of the amorphous alloy described in -
It is necessary to align perpendicularly to the i-plane, and this perpendicularly magnetizable film can be formed by vapor deposition, sputtering, or the like.
これら希土類−遷移金属のアモルファス合金の垂直磁化
可能膜において現在特に問題となっている点は酸化安定
性である。すなわち、これらアモルファス合金は空気中
の噛素によって酸化され、垂直磁化特性を失ってしまう
ため、長年月の保存性が要求される記録媒体と1〜で実
用化できないという問題がある。Oxidation stability is currently a particular problem in perpendicularly magnetizable films of these rare earth-transition metal amorphous alloys. That is, these amorphous alloys are oxidized by particles in the air and lose their perpendicular magnetization characteristics, so there is a problem that they cannot be put to practical use with recording media that require long-term storage stability.
本発明者は酸化を受け易いFeを含まないアモルファス
合金について研究を続けた結果、Tb−〇〇のアモルフ
ァス合金が耐酸化安定性に優れていることを発見し、本
発明を完成したものである。As a result of continuing research on amorphous alloys that do not contain Fe, which are susceptible to oxidation, the inventor discovered that an amorphous alloy of Tb-〇〇 has excellent oxidation resistance stability, and completed the present invention. .
従来、Feを含まない希十m−遷移金属の垂直磁化可能
膜としては主としてQd−Co系が研究されてきたが、
T b −Co系に関する研究は少なく、これら両者の
特性と単動には一応の顧似性はあるが、一般の合金の場
合と同様に合金系の違いによって全く予測できない単動
を示すことがある。Conventionally, Qd-Co systems have been mainly studied as perpendicularly magnetizable films of rare 10m-transition metals that do not contain Fe.
There are few studies on the T b -Co system, and although there are some similarities in the properties and single action of the two, it is possible that the two types of alloys exhibit unpredictable single action depending on the difference in alloy system, just as in the case of general alloys. be.
T b −Coアモルファス合金が垂直磁化特性を有す
るということ並びにそれが垂直磁化となる組成領域はT
bxCo+−xで表わl〜だ場合Xが約0.2前後であ
ることは既に公知である(例えば日本電子工業振興協会
編[光デイスクメモリ用月利に関する調査報告書」(昭
57年3月)、第70〜72頁参照)。T b -Co amorphous alloy has perpendicular magnetization characteristics and the composition region where it has perpendicular magnetization is T
It is already known that when l~, expressed as bxCo+-x, ), pp. 70-72).
しかし、この組成のT b −Co f単に周知の蒸着
あるいはスパッタリングによって薄膜に]7ても、長期
間にわたって安定な垂直磁化可能膜を?()ることはで
きない。本発明者はTI)−Coアモルファス合金膜に
垂直磁化に機能しない無効層が存在することを見出し、
さらに、この耐酸化機能を向−1ニさせる方法を発見1
7た。However, even if T b -Cof of this composition is simply formed into a thin film by well-known vapor deposition or sputtering, it is not possible to obtain a perpendicularly magnetizable film that is stable over a long period of time. () cannot be done. The present inventor discovered that an ineffective layer that does not function for perpendicular magnetization exists in a TI)-Co amorphous alloy film,
Furthermore, we discovered a method to improve this oxidation resistance function1.
7.
(発明の目的)
したがって、本発明の目的は耐久性に優れた垂面磁化可
能なT b −Coアモルファス合金膜の製造方法を提
供することにある。(Object of the Invention) Therefore, an object of the present invention is to provide a method for manufacturing a vertically magnetizable T b -Co amorphous alloy film that has excellent durability.
(発明の構成)
本発明は基板上に補償温度記録組成を有するテルビウム
−コバルトアモルファス合金のa性薄iをスパッタリン
グ法によって形成して光磁気記録媒体を製造する方法に
おいて、上記磁性薄膜のスバ・ツタリングを実施する前
に上記基板表面をスパッタエツチングすることを特徴と
している。(Structure of the Invention) The present invention provides a method for manufacturing a magneto-optical recording medium by forming an a-type thin film of a terbium-cobalt amorphous alloy having a compensated temperature recording composition on a substrate by a sputtering method. The method is characterized in that the surface of the substrate is subjected to sputter etching before performing the tsuttering.
上記基板としては一般にはガラス板が使用されるが、ス
バ・ツタリングが可能な材料であれば特にガラスに限定
されることは無く、アルミニウム、ステンレススチール
等の金属板あるいはポリメチルメタクリレート、ポリカ
ーボネート等のプラスチック板、あるいけポリエステル
のようなテープあるいはシートであってもよい。Generally, a glass plate is used as the above-mentioned substrate, but it is not limited to glass as long as it is made of a material that can be splattered and swayed. Metal plates such as aluminum and stainless steel, or metal plates such as polymethyl methacrylate and polycarbonate can also be used. It may be a plastic plate, or a tape or sheet such as polyester.
T I) X Co l−xの組成比は補償温度記録可
能な公知のものでよく、一般には蒸着による場合はx
= 0.2〜0.35、スバ・ツタリングによる場合は
x=0.15〜032程度である。一般に補償温度は組
成依存性が太きいが、所望の補償温度に合せて組成比を
決めることができる。T I) The composition ratio of
= 0.2 to 0.35, and in the case of Suba Tsutaring, x = about 0.15 to 032. Generally, the compensation temperature has a strong dependence on the composition, but the composition ratio can be determined according to the desired compensation temperature.
=5−
上記のTbC0アモルファス膜はスパッタリングによっ
て作るのが好ましい。このスバ・ツタリングは基板にバ
イアスをかけるバイアススパッタリングを用いるのが好
ましい。このバイアススパッタリングは本発明者達によ
るJ、J、A、、P、1.9 (19so)1807に
詳細に説明されている。=5- The above TbC0 amorphous film is preferably made by sputtering. Preferably, this sputtering uses bias sputtering that applies a bias to the substrate. This bias sputtering is described in detail in J, J, A, , P, 1.9 (19so) 1807 by the present inventors.
以ヒは既に公知の事項であり、本発明の一部を成すもの
ではないので詳細は省略する。必要な場合には上記の各
文献等を参照されたい。Since the following is already known matter and does not form part of the present invention, details will be omitted. If necessary, please refer to the above-mentioned documents.
(発明のa床)
本発明の特徴は上記薄膜をスパッタリングする前に上記
基板表面をスパッタエツチングする点にある。(A-bed of the invention) A feature of the present invention is that the surface of the substrate is sputter-etched before sputtering the thin film.
この基板表面のスパッタエツチングはスパッタリング装
置中にArガスを導入し、シャッターを閉 ゛じた状態
でArで基板をスバ・ツタリングすればよい。This sputter etching of the substrate surface can be carried out by introducing Ar gas into the sputtering apparatus, and then subjecting the substrate to sputter etching with Ar gas while the shutter is closed.
T b −Co系アモルファス合金の垂直磁化可能膜の
耐久性はこのスパッタエツチングによって犬d〕に向旧
する。すなわち、Arにより基板をスバツタ6一
エツチングすることによって基板上に吸着してし・る不
純物、例えば酸素や油分が除去され、基板表面が浄化さ
れる。The durability of the perpendicularly magnetizable film of the T b -Co-based amorphous alloy is improved by this sputter etching. That is, by etching the substrate with Ar using the spatter 6, impurities adsorbed on the substrate, such as oxygen and oil, are removed, and the surface of the substrate is purified.
に記スパッタエツチングを行う時間は10分間以1−で
あるのが好ましい。10分間以下では十分な浄化が達成
できない。また10分以上行っても結果に大差はない。It is preferable that the time for performing the sputter etching described above is 10 minutes or more. Sufficient purification cannot be achieved in less than 10 minutes. Furthermore, there is no significant difference in the results even if the test is carried out for more than 10 minutes.
このスパソタエ・ノチングを行うことによっ、てカー回
転角はそれを行わない場合の0.16から027へと約
1.7倍に増加する。By performing this spacing notching, the Kerr rotation angle increases from 0.16 in the case where it is not performed to 0.27, approximately 1.7 times.
このスバ・ツタエツチングによる効果はTb−(2)ア
モルファス合金の場合において特、に顕著であり、T
b−P eアモルファス今金ではほとんど効果がない。The effect of this suba-tsuta etching is particularly remarkable in the case of Tb-(2) amorphous alloy;
There is almost no effect with b-P e amorphous metal.
本発明者は」=記スパッタエツチングを行った基板に対
してT b −Coアモルファス合金を膜厚を変えてス
パッタリングによって形成し、光磁気効果(カー回転角
θk およびファラデー回転角θF)を測定[7た結果
、光磁気効果が得られない膜厚すなわち無効層が存在す
ること、そしてこの無効層膜厚が60Aであることがわ
かった。従ってTb−Coアモルファス合金記録層の膜
厚は少なくとも60A以上なければならない。The present inventor formed a T b -Co amorphous alloy with varying film thickness on a sputter-etched substrate by sputtering, and measured the magneto-optical effect (Kerr rotation angle θk and Faraday rotation angle θF) [ As a result, it was found that there was a film thickness in which no magneto-optical effect could be obtained, that is, an ineffective layer, and that the film thickness of this ineffective layer was 60A. Therefore, the thickness of the Tb--Co amorphous alloy recording layer must be at least 60A or more.
本発明によりスパッタエツチング17だ基板上に形成し
たT b −(:、 oアモルファス合金記録層は極め
て高い耐酸化性すなわち安定性を示す。すなわち110
°Cに昇温1〜た大気中で一上記記録層をアニールシた
場合でもスバツタエ・ノチングを行った基板側では全く
酸化劣化が見られない。一方大気に露された側では無効
層の厚さは120A程度になるが、長時間アニールして
もこれ以J二の酸化劣化は昭められなかった。The Tb-(:,o amorphous alloy recording layer formed on a sputter-etched 17 substrate according to the present invention exhibits extremely high oxidation resistance or stability, i.e., 110
Even when the above-mentioned recording layer was annealed in the atmosphere at a temperature raised to 1°C, no oxidation deterioration was observed on the side of the substrate to which the notching was performed. On the other hand, on the side exposed to the atmosphere, the thickness of the ineffective layer was about 120A, but the oxidation deterioration of J2 could not be alleviated even after long-term annealing.
以下、本発明を実施例を用いて説明する。The present invention will be explained below using examples.
実施例
第1図に示す周知の二極11.Fスパッタ装置 (UL
VAC8B R−] 104 E )+7)基板ホルタ
−にガラス基板(1)を保持させ、銅のバッキングプレ
ート上にターゲット(1007nmgのコバルトディス
ク(2)上に1. OX 10 rnrn、”のテルビ
ウムチップ(3)数枚均一に配置したもの、; T b
O,27CO,73)を置いた。Embodiment The well-known bipolar pole 11 shown in FIG. F sputtering equipment (UL
VAC8B R-] 104 E )+7) Hold the glass substrate (1) in a substrate holter and place a target (1007 nm cobalt disk (2) on a 1.OX 10 rnrn," terbium chip ( 3) Several sheets evenly arranged; T b
O, 27CO, 73) were placed.
真空槽を5×1O−7TOrrに排気した後にArガス
を導入してA、rガス圧を10mTOrrにセットし、
シャッター(5)を閉じた状態でガラス基板(1)をA
rガスでスパッタエツチングした。After evacuating the vacuum chamber to 5×1O-7 TOrr, introduce Ar gas and set the A and r gas pressures to 10 mTOrr.
With the shutter (5) closed, move the glass substrate (1) to A.
Sputter etching was performed using r gas.
コノスパッタエツチングの時間(分)と最終的に得られ
だ膜厚12μのTb−C0アモルファス合金記録層を付
けたガラス基板の力・−回転角θk(度)との関係は第
2図に示しである。スバ・ツタエツチング時間を10分
以上にするとガラス側から測定したθk が大巾に向上
することがわかる。The relationship between the time (minutes) of conosputter etching and the force/rotation angle θk (degrees) of the glass substrate with the finally obtained Tb-C0 amorphous alloy recording layer with a film thickness of 12μ is shown in Figure 2. It is. It can be seen that when the suba/vine etching time is increased to 10 minutes or more, θk measured from the glass side is greatly improved.
比較のためT b −P eアモルファス合金を同様に
して形成したものの測定結果も第2図に示しである。酸
化し易いFeに比べCoを用いた場合のスパッタエツチ
ングの効果が顕著であることがよくわかる。For comparison, the measurement results of a Tb-Pe amorphous alloy formed in the same manner are also shown in FIG. It is clearly seen that the effect of sputter etching when using Co is more significant than that of Fe, which is easily oxidized.
なお、上記スバソタエ・ノチングを行う場合にはマツチ
ング回路6,7の接点をともにEにセ・/卜すればよい
。Incidentally, when performing the above-mentioned subasotae notching, the contacts of the matching circuits 6 and 7 may both be set to E.
次にシャッターを開いて本スパッタリングを行った。上
記スバツタエ・ノチングを60分間行った9−
’p l) −Coアモルファス合金膜の膜厚を種々変
えてカー回転角01((度)とファラデー回転角OF(
度)を測定した結果は第3図に示しである。Next, the shutter was opened and main sputtering was performed. The Kerr rotation angle 01 ((degree)) and the Faraday rotation angle OF(
The results of measuring the temperature are shown in Figure 3.
この第3図においてOk(G )はガラス基板側から、
まだθk(F )はT l) −CO瞳側から各々測定
した値である。この第3図から膜厚60A以下では光磁
気効果が無い無効層となることがわかる。In this Figure 3, Ok(G) is from the glass substrate side,
Still, θk(F) is a value measured from the Tl)-CO pupil side. It can be seen from FIG. 3 that a film thickness of 60 Å or less becomes an ineffective layer with no magneto-optical effect.
また、各膜厚に対する飽和磁化(M s )と垂直方向
の保磁力(Hc )の値を第4図に示しである。Further, FIG. 4 shows the values of saturation magnetization (M s ) and perpendicular coercive force (Hc) for each film thickness.
膜厚が小さく々るにつれてMsが増加し、I−1cが減
少することから上記無効層はTbが選択的に酸化されて
CO−口c h 11111にずれて垂直磁化組成の範
囲からずれだ結果生じるものと思われる。As the film thickness decreases, Ms increases and I-1c decreases, so in the above invalid layer, Tb is selectively oxidized and shifts to CO-ch 11111, which deviates from the range of perpendicular magnetization composition. This is expected to occur.
本発明によるスパッタエツチングを行っりTb−C0ア
モルファス合金記録層の酸化安定性を調べるために、1
00℃に昇温しだ大気中で上記記録層の光磁気効果の変
化を測定したのが第5図である。In order to investigate the oxidation stability of the Tb-C0 amorphous alloy recording layer by sputter etching according to the present invention, 1
Figure 5 shows the measurement of the change in the magneto-optical effect of the recording layer in the atmosphere as the temperature rose to 00°C.
この第5図は膜厚800Aの記録層について行ったもの
で、θk(G )はガラス基板側から、また、−1〇−
θk(F)はアモルファス合金層側から測定した値であ
る。この図かられかるように、ガラス板側のθk(G
)は経時的に極めて安定であり、まだアモルファス合金
層側のθk(P)もほぼ0.12で飽和する。この時の
酸化層の膜厚(1)前記第3図から約12OAと見積る
ことができる。この値はその後はとんど変化しない。FIG. 5 was taken for a recording layer with a film thickness of 800 Å, and θk (G) is the value measured from the glass substrate side, and -10-θk (F) is the value measured from the amorphous alloy layer side. As can be seen from this figure, θk(G
) is extremely stable over time, and θk(P) on the amorphous alloy layer side is still saturated at approximately 0.12. The thickness of the oxide layer at this time (1) can be estimated to be approximately 12 OA from FIG. 3 above. This value rarely changes after that.
以上、本発明を特殊実施例について説明しだが、本発明
はこれにのみ限定されるものではない。Although the present invention has been described above with reference to special embodiments, the present invention is not limited thereto.
第1図は本発明で用いた周知のR,Fスパッタ装置の概
念図。
第2図は本発明によるスバ・ツタエツチングの効果を示
す図で、曲線A id T b −Co膜のガラス板側
から読んだ時のカー回転角(度)とスバツタエ・ノチン
グ時間(分)との関係を示し、曲線BidTb−Feに
対するものである。
第3図はTb−C0膜厚に対するカー回転角(θk(G
)ニガラス板側から読んだ値、θk(F):T I)−
Co 瞭側から読んだ値)およびファラデー回転角(θ
F)との各関係を示す図。
第4図はT b−Co膜厚に対する飽和磁化(Ms)お
よび垂直方向の保持力(t(c )の関係を示す図。
第5図は本発明により得られたTb−Co膜を110°
Cの大気中でアニールした時のアニール時間(分)とカ
ー回転角の関係を示す図で、計算により算出した酸化層
膜厚(π:単位A)も同時に示しである。
(図中符号)FIG. 1 is a conceptual diagram of a well-known R,F sputtering apparatus used in the present invention. FIG. 2 is a diagram showing the effect of the notching according to the present invention, where the curve A id T b is the relationship between the Kerr rotation angle (degrees) and the notching time (minutes) when read from the glass plate side of the Co film. The relationship is shown for the curve BidTb-Fe. Figure 3 shows the Kerr rotation angle (θk(G
) Value read from the glass plate side, θk(F): T I)-
Co value read from the clear side) and Faraday rotation angle (θ
A diagram showing each relationship with F). Fig. 4 is a diagram showing the relationship between saturation magnetization (Ms) and perpendicular coercive force (t(c)) with respect to the Tb-Co film thickness.
This is a diagram showing the relationship between the annealing time (minutes) and the Kerr rotation angle when annealing is performed in the atmosphere of C, and the calculated oxide layer thickness (π: unit A) is also shown. (Code in the diagram)
Claims (1)
バルトアモルファス合金の磁性薄膜をスパッタリング法
によって形成して光磁気記録媒体を製造する方法におい
て、上記磁性薄膜のスパッタリングを実施する前に上記
基板表面をスバツタエ・ノチングすることを特徴とする
方法。 2)J:記スパ・ノタエ・ノチングを行う時間が10分
間以上であることを特徴とする特許請求の範囲第1項に
記載の方法。 3)上記磁性膜がバイアススパ・ツタリングにより形成
されることを特徴とする特許請求の範囲第1項に記載の
方法。 4)上記磁性膜の膜厚が60A以上であることを特徴と
する特許請求の範囲第1項に記載の方法。[Claims] 1) A method for manufacturing a magneto-optical recording medium by forming a magnetic thin film of a terbium-cobalt amorphous alloy having a compensated temperature recording composition on a substrate by a sputtering method, in which sputtering of the magnetic thin film is carried out. A method characterized in that the surface of the substrate is previously notched. 2) J: The method according to claim 1, wherein the time for performing the spa notae notching is 10 minutes or more. 3) The method according to claim 1, wherein the magnetic film is formed by bias spacing. 4) The method according to claim 1, wherein the magnetic film has a thickness of 60A or more.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4555384A JPS60191451A (en) | 1984-03-12 | 1984-03-12 | Manufacture of photomagnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4555384A JPS60191451A (en) | 1984-03-12 | 1984-03-12 | Manufacture of photomagnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60191451A true JPS60191451A (en) | 1985-09-28 |
Family
ID=12722549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4555384A Pending JPS60191451A (en) | 1984-03-12 | 1984-03-12 | Manufacture of photomagnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60191451A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6194251A (en) * | 1984-10-16 | 1986-05-13 | Mitsubishi Plastics Ind Ltd | Production of recording medium |
JPS6254078A (en) * | 1985-06-12 | 1987-03-09 | レイボルド アクティエンゲゼルシャフト | Apparatus for depositing membrane to substrate by cathodic sputtering treatment |
JPH01180970A (en) * | 1988-01-13 | 1989-07-18 | Tadahiro Omi | Vacuum surface treatment device |
JPH02168452A (en) * | 1988-12-21 | 1990-06-28 | Oki Electric Ind Co Ltd | Manufacture of magneto-optical recording medium |
WO1996008008A1 (en) * | 1994-09-06 | 1996-03-14 | Migaku Takahashi | Magnetooptic thin film, magnetooptic recording medium and production method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56156764A (en) * | 1980-05-02 | 1981-12-03 | Fujitsu Ltd | Spattering device |
JPS5727451A (en) * | 1980-07-23 | 1982-02-13 | Sharp Corp | Magnetooptic storage element |
JPS5741370A (en) * | 1980-08-27 | 1982-03-08 | Hitachi Ltd | Continuous sputtering device |
-
1984
- 1984-03-12 JP JP4555384A patent/JPS60191451A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56156764A (en) * | 1980-05-02 | 1981-12-03 | Fujitsu Ltd | Spattering device |
JPS5727451A (en) * | 1980-07-23 | 1982-02-13 | Sharp Corp | Magnetooptic storage element |
JPS5741370A (en) * | 1980-08-27 | 1982-03-08 | Hitachi Ltd | Continuous sputtering device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6194251A (en) * | 1984-10-16 | 1986-05-13 | Mitsubishi Plastics Ind Ltd | Production of recording medium |
JPS6254078A (en) * | 1985-06-12 | 1987-03-09 | レイボルド アクティエンゲゼルシャフト | Apparatus for depositing membrane to substrate by cathodic sputtering treatment |
JPH01180970A (en) * | 1988-01-13 | 1989-07-18 | Tadahiro Omi | Vacuum surface treatment device |
JPH02168452A (en) * | 1988-12-21 | 1990-06-28 | Oki Electric Ind Co Ltd | Manufacture of magneto-optical recording medium |
WO1996008008A1 (en) * | 1994-09-06 | 1996-03-14 | Migaku Takahashi | Magnetooptic thin film, magnetooptic recording medium and production method thereof |
US6190763B1 (en) | 1994-09-06 | 2001-02-20 | Migaku Takahashi | Magnetooptic thin film, magnetoopic record medium |
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