JPS5731151A - Automatic continuous treating device for semiconductor substrate - Google Patents
Automatic continuous treating device for semiconductor substrateInfo
- Publication number
- JPS5731151A JPS5731151A JP10642780A JP10642780A JPS5731151A JP S5731151 A JPS5731151 A JP S5731151A JP 10642780 A JP10642780 A JP 10642780A JP 10642780 A JP10642780 A JP 10642780A JP S5731151 A JPS5731151 A JP S5731151A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- vapor bath
- semiconductor substrate
- juxtaposing
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To contrive mass production of substrates through continuous treatment at a fixed speed, by consecutively connecting a vapor bath for a surface reforming agent and a resist coating unit to a scribing device for a semiconductor substrate. CONSTITUTION:A vapor bath 10 containing organic chlorasilane or hexamethyldisilazan 13 is provided by juxtaposing with a scribing device for cleaning. The doors 15, 15' of the container move up and down in synchronization with sequential sending of semiconductor substrates, and the substrates pass through slits 14, 14'. A conveyor belt 16 is made of stainless steel wire and intermittently driven. High temperatures are not requested owing to the vapor bath, and the substrates cleaned in a short period are coated with resists by juxtaposed resist coating device. Each of the devices has the same sending speed, therefore any buffer for absorbing speed difference is absolutely unnecessary, and the vapor bath can perform treatment in an extremely short period and at a normal temperature or low temperature at about 50 deg.C. Therefore, a series of treatment facilitates can be obtained by juxtaposing other devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10642780A JPS5731151A (en) | 1980-08-04 | 1980-08-04 | Automatic continuous treating device for semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10642780A JPS5731151A (en) | 1980-08-04 | 1980-08-04 | Automatic continuous treating device for semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5731151A true JPS5731151A (en) | 1982-02-19 |
Family
ID=14433353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10642780A Pending JPS5731151A (en) | 1980-08-04 | 1980-08-04 | Automatic continuous treating device for semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5731151A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59175122A (en) * | 1983-03-23 | 1984-10-03 | Nec Corp | Before-coating processing device for semiconductor wafer |
JPS6425535A (en) * | 1987-07-22 | 1989-01-27 | Matsushita Electronics Corp | Treatment of substrate for forming resist film |
JPH03119740U (en) * | 1990-03-19 | 1991-12-10 | ||
KR101388504B1 (en) * | 2007-07-27 | 2014-04-23 | 주식회사 케이씨텍 | Cleaning apparatus for substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5130890A (en) * | 1974-09-10 | 1976-03-16 | Japan Synthetic Rubber Co Ltd | Ketsushosei 1 22 horiputajen no seizoho |
JPS5413777A (en) * | 1977-07-01 | 1979-02-01 | Nec Corp | Photo resist coater of semiconductor wafers |
JPS5487477A (en) * | 1977-12-23 | 1979-07-11 | Kokusai Electric Co Ltd | Device for etching and stripping semiconductor wafer |
-
1980
- 1980-08-04 JP JP10642780A patent/JPS5731151A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5130890A (en) * | 1974-09-10 | 1976-03-16 | Japan Synthetic Rubber Co Ltd | Ketsushosei 1 22 horiputajen no seizoho |
JPS5413777A (en) * | 1977-07-01 | 1979-02-01 | Nec Corp | Photo resist coater of semiconductor wafers |
JPS5487477A (en) * | 1977-12-23 | 1979-07-11 | Kokusai Electric Co Ltd | Device for etching and stripping semiconductor wafer |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59175122A (en) * | 1983-03-23 | 1984-10-03 | Nec Corp | Before-coating processing device for semiconductor wafer |
JPS6355860B2 (en) * | 1983-03-23 | 1988-11-04 | Nippon Electric Co | |
JPS6425535A (en) * | 1987-07-22 | 1989-01-27 | Matsushita Electronics Corp | Treatment of substrate for forming resist film |
JPH03119740U (en) * | 1990-03-19 | 1991-12-10 | ||
KR101388504B1 (en) * | 2007-07-27 | 2014-04-23 | 주식회사 케이씨텍 | Cleaning apparatus for substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0095275A3 (en) | Photo-assisted cvd | |
EP0651431A3 (en) | Method of crystallizing a silicone layer and semiconductor devices obtained by using the method | |
ZA792362B (en) | Process and diagnostic device for the determination of ammonia and of substrates which react with the formation of ammonia | |
DE3267217D1 (en) | Process and apparatus for coating a substrate with a highly absorbent material, in particular a hygienic article | |
BR7806939A (en) | PROCESS FOR THE DEPOSITION OF TRANSPARENT STANIC OXIDE FILMS ON A HEATED SUBSTRATE, ARTICLE AND APPARATUS FOR CHEMICAL VAPOR DEPOSITION | |
GB2035380B (en) | Process for the chemical deposition of gold by autocatalytic reduction | |
JPS5731151A (en) | Automatic continuous treating device for semiconductor substrate | |
FR2386359A1 (en) | CONTINUOUS IMMERSION DEPOSIT PROCESS, DEVICE AND PRODUCTS OBTAINED | |
ES8602162A1 (en) | Process and apparatus for applying and simultaneously fixing a chemical to a textile substrate. | |
ES478460A1 (en) | Apparatus for coating frozen portions with a granulated product | |
JPS5272399A (en) | Method and apparatus for growth of single crystals of al2o3 from gas p hase | |
GB2260342B (en) | Process for the selective deposition of thin diamond film by chemical vapour deposition | |
JPS54125981A (en) | Semiconductor washing device | |
JPS5421862A (en) | Production of liquid crystal elements | |
ES496168A0 (en) | A METHOD AND ITS CORRESPONDING DEVICE FOR THE TREATMENT OF AN ARTICLE WITH A PARTICULATED MATERIAL FOR EXAMPLE, TO TEMPER TEMPERALLY TEMPERING GLASS SHEETS. | |
FR2285454A1 (en) | PROCESS FOR TRANSFORMATION OF A MICROBIOLOGICAL SUBSTRATE AND DEVICE FOR CARRYING OUT THIS PROCESS | |
GB1518757A (en) | Process an apparatus for cultivating plants | |
ZA792663B (en) | Process for coating vitreous article,and such coated articles | |
JPS56116016A (en) | Manufacture of liquid crystal panel | |
FR2618775B3 (en) | PROCESS AND DEVICE FOR TREATING THE OUTSIDE SURFACE OF CONTAINERS, PARTICULARLY FOR DEPOLISHING GLASS CONTAINERS | |
JPS5381487A (en) | Method and apparatus for liquid phase epitaxial growth | |
Schnabel | Some pedochemical processes in areas of ash deposition as affected by spontaneous colonization of higher plants. | |
JPS5717496A (en) | Liquid phase growing method for single crystal of compound semiconductor | |
JPS53105173A (en) | Adhering method for silicon substrate | |
JPS5411037A (en) | Chemical treating method for metal surface |