JPS5726488A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPS5726488A JPS5726488A JP10079080A JP10079080A JPS5726488A JP S5726488 A JPS5726488 A JP S5726488A JP 10079080 A JP10079080 A JP 10079080A JP 10079080 A JP10079080 A JP 10079080A JP S5726488 A JPS5726488 A JP S5726488A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- type
- buried
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain stable basic mode single oscillation by forming a light absorbing region in the vicinity of the side face except the central region of an active layer in a clad layer. CONSTITUTION:A part of a layer 2, a non-doped active layer 3 and a P type clad layer 5 are sequentially laminated on an N type clad layer 2 on an N type substrate 1 to form a mesa striped region 6. A light absorption region 13 having smaller energy gap than the layer 3 is formed on the region except the central region along the longitudinal direction of the layer 3. The region 6 is so buried as to be formed of a current stopping layer 9 made of P type layer 7 and N type layer 8 and of a buried layer made of an N type contact layer 10 formed on the layer 9 with flat upper surface. Thus, the oscillation light leaking from the layer 3 to the layers 2, 4 is absorbed by the region 13, and the reflected oscillated light from the buried layer can be largely reduced in the lateral direction of the layer 3. Thus, the stable basic lateral mode single oscillation can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10079080A JPS5726488A (en) | 1980-07-23 | 1980-07-23 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10079080A JPS5726488A (en) | 1980-07-23 | 1980-07-23 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5726488A true JPS5726488A (en) | 1982-02-12 |
Family
ID=14283228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10079080A Pending JPS5726488A (en) | 1980-07-23 | 1980-07-23 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5726488A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4807235A (en) * | 1985-09-11 | 1989-02-21 | 501 Sharp Kabushiki Kaisha | Semiconductor laser device |
| EP0753915A3 (en) * | 1995-07-14 | 1997-07-16 | Mitsubishi Electric Corp | Semiconductor laser for pumping light amplifier and method for making the semiconductor laser |
| JP2003523075A (en) * | 1999-12-30 | 2003-07-29 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Stripe laser diode element |
| WO2004027951A1 (en) * | 2002-09-17 | 2004-04-01 | Bookham Technology Plc | High power semiconductor laser diode and method for making such a diode |
-
1980
- 1980-07-23 JP JP10079080A patent/JPS5726488A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4807235A (en) * | 1985-09-11 | 1989-02-21 | 501 Sharp Kabushiki Kaisha | Semiconductor laser device |
| EP0753915A3 (en) * | 1995-07-14 | 1997-07-16 | Mitsubishi Electric Corp | Semiconductor laser for pumping light amplifier and method for making the semiconductor laser |
| JP2003523075A (en) * | 1999-12-30 | 2003-07-29 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Stripe laser diode element |
| WO2004027951A1 (en) * | 2002-09-17 | 2004-04-01 | Bookham Technology Plc | High power semiconductor laser diode and method for making such a diode |
| US6862300B1 (en) | 2002-09-17 | 2005-03-01 | Bookham Technology Plc | High power semiconductor laser diode and method for making such a diode |
| US7623555B2 (en) | 2002-09-17 | 2009-11-24 | Oclaro Technology Plc | High power semiconductor laser diode |
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