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JPS5543822A - Semiconductor light emission device - Google Patents

Semiconductor light emission device

Info

Publication number
JPS5543822A
JPS5543822A JP11628778A JP11628778A JPS5543822A JP S5543822 A JPS5543822 A JP S5543822A JP 11628778 A JP11628778 A JP 11628778A JP 11628778 A JP11628778 A JP 11628778A JP S5543822 A JPS5543822 A JP S5543822A
Authority
JP
Japan
Prior art keywords
light
layer
absorbing
semiconductor
absorbing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11628778A
Other languages
Japanese (ja)
Inventor
Hajime Imai
Hiroshi Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11628778A priority Critical patent/JPS5543822A/en
Publication of JPS5543822A publication Critical patent/JPS5543822A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To conduct single laser oscillation, without allowing threshold value current density and radiation strength to increase, by forming a light-absorbing layer narrowing gain width by absorbing light from a part of the band region of the light naturally radiating onto a light radiation surface. CONSTITUTION:A light-absorbing layer 8, which narrowa a gain width by absorbing a part of naturally radiated light, is formed on at least one side of mirror surface which is to become a light-radiating surface of a semiconductor laser which is composed of s base board 1, a clad layer 2, on active layer 3, a clad layer 4, a cap layer 5 and metallic electrodes 6 and 7. While a colored glass or a semiconductor is to be used for this absorbing layer 8, if there is a fear of causing leak in the case of using a semiconductor, the absorbing layer 8 may be used in such a structure as to be sandwitched between silicon dioxide layers 9 and 10.
JP11628778A 1978-09-21 1978-09-21 Semiconductor light emission device Pending JPS5543822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11628778A JPS5543822A (en) 1978-09-21 1978-09-21 Semiconductor light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11628778A JPS5543822A (en) 1978-09-21 1978-09-21 Semiconductor light emission device

Publications (1)

Publication Number Publication Date
JPS5543822A true JPS5543822A (en) 1980-03-27

Family

ID=14683313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11628778A Pending JPS5543822A (en) 1978-09-21 1978-09-21 Semiconductor light emission device

Country Status (1)

Country Link
JP (1) JPS5543822A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5721752A (en) * 1995-12-15 1998-02-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
WO2011023551A1 (en) * 2009-08-26 2011-03-03 Nanoplus Gmbh Nanosystems And Technologies Semiconductor laser with absorber applied to a laser mirror

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5721752A (en) * 1995-12-15 1998-02-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
WO2011023551A1 (en) * 2009-08-26 2011-03-03 Nanoplus Gmbh Nanosystems And Technologies Semiconductor laser with absorber applied to a laser mirror
US8879599B2 (en) 2009-08-26 2014-11-04 Nanoplus Gmbh Nanosystems And Technologies Semiconductor laser with absorber applied to a laser mirror

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