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JPS5727092A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5727092A
JPS5727092A JP10225080A JP10225080A JPS5727092A JP S5727092 A JPS5727092 A JP S5727092A JP 10225080 A JP10225080 A JP 10225080A JP 10225080 A JP10225080 A JP 10225080A JP S5727092 A JPS5727092 A JP S5727092A
Authority
JP
Japan
Prior art keywords
layer
type
electrode
type gaas
end surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10225080A
Other languages
Japanese (ja)
Inventor
Haruki Kurihara
Naoto Mogi
Seiji Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10225080A priority Critical patent/JPS5727092A/en
Publication of JPS5727092A publication Critical patent/JPS5727092A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent deterioration due to stress applied to a crystal and to obtain long life, by forming an exciting region, to which a current is injected in stripe shape, only in the inside of a region covered by a PHS (plated heat sink) electrode. CONSTITUTION:On an N type GaAs substrate 11, is formed a double heterogeneous (DH) structure comprising N type Ga0.7Al0.3As layer 12, a P type Ga0.97Al0.03As layer 13, and a P type Ga0.7Al0.3As layer 14. A P type GaAs layer 15' which is patterned in a stripe shape is formed so as to confine the injecting current. An oxide film 16, a P side electrode 17 of a Cr-Au layer, an N side electrode 18 of Au-Ge, and the PHS electrode 19 of Au are formed. The stripe shaped P type GaAs layer 15' to which current is injected is not extended up to the end surface of the resonator. The end surface of the P type GaAs layer 15' is located within the inner side than the end surface of the PHS electrode 19.
JP10225080A 1980-07-25 1980-07-25 Semiconductor laser device Pending JPS5727092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10225080A JPS5727092A (en) 1980-07-25 1980-07-25 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10225080A JPS5727092A (en) 1980-07-25 1980-07-25 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5727092A true JPS5727092A (en) 1982-02-13

Family

ID=14322350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10225080A Pending JPS5727092A (en) 1980-07-25 1980-07-25 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5727092A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608749A (en) * 1992-09-16 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode
JP2002261379A (en) * 2001-03-02 2002-09-13 Mitsubishi Electric Corp Semiconductor device and optical semiconductor device comprising it
GB2411522A (en) * 2000-12-18 2005-08-31 Samsung Electro Mech Light emitting device having heat-dissipating element
JP2010056583A (en) * 2009-12-10 2010-03-11 Sanyo Electric Co Ltd Semiconductor laser element
JP2010124002A (en) * 2010-03-08 2010-06-03 Hitachi Ltd Semiconductor laser device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608749A (en) * 1992-09-16 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode
GB2411522A (en) * 2000-12-18 2005-08-31 Samsung Electro Mech Light emitting device having heat-dissipating element
GB2411522B (en) * 2000-12-18 2005-11-02 Samsung Electro Mech GaN based group III-V nitride semi-conductor light emitting diode
JP2002261379A (en) * 2001-03-02 2002-09-13 Mitsubishi Electric Corp Semiconductor device and optical semiconductor device comprising it
JP2010056583A (en) * 2009-12-10 2010-03-11 Sanyo Electric Co Ltd Semiconductor laser element
JP2010124002A (en) * 2010-03-08 2010-06-03 Hitachi Ltd Semiconductor laser device

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