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JPS5763884A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device

Info

Publication number
JPS5763884A
JPS5763884A JP14015980A JP14015980A JPS5763884A JP S5763884 A JPS5763884 A JP S5763884A JP 14015980 A JP14015980 A JP 14015980A JP 14015980 A JP14015980 A JP 14015980A JP S5763884 A JPS5763884 A JP S5763884A
Authority
JP
Japan
Prior art keywords
layer
type
type inp
laminated
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14015980A
Other languages
Japanese (ja)
Other versions
JPS6237900B2 (en
Inventor
Toshio Murotani
Hirobumi Namisaki
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14015980A priority Critical patent/JPS5763884A/en
Publication of JPS5763884A publication Critical patent/JPS5763884A/en
Publication of JPS6237900B2 publication Critical patent/JPS6237900B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To stabilize lateral mode oscillation by making low threshold value operation possible, by employing a 3-layer structure having in the middle a reverse conductive type layer as a current-narrowing layer, and then by providing an active layer in an opening section of this narrowing layer. CONSTITUTION:A P type InP 8, an N type InP 11 and a P type InP 12 are laminated in turn on an N type InP substrate 1, and after a groove 13 is provided on the center, N type InP layers 9 and 10, an N type InGaAsP active layer 3 (2 is also an N type InGaAsP layer) and a P type InGaAsP layer 4 are laminated in turn, and an electrode 6 is provided through an insulation film 5, and then, an electrode 7 on the other side is also formed. It is possible, by doing so, to prevent current leakage, to enable basic lateral mode oscillation to take place at a low threshold value and a high efficiency, and also to improve the temperature characteristics.
JP14015980A 1980-10-06 1980-10-06 Semiconductor light-emitting device Granted JPS5763884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14015980A JPS5763884A (en) 1980-10-06 1980-10-06 Semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14015980A JPS5763884A (en) 1980-10-06 1980-10-06 Semiconductor light-emitting device

Publications (2)

Publication Number Publication Date
JPS5763884A true JPS5763884A (en) 1982-04-17
JPS6237900B2 JPS6237900B2 (en) 1987-08-14

Family

ID=15262235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14015980A Granted JPS5763884A (en) 1980-10-06 1980-10-06 Semiconductor light-emitting device

Country Status (1)

Country Link
JP (1) JPS5763884A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Also Published As

Publication number Publication date
JPS6237900B2 (en) 1987-08-14

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