[go: up one dir, main page]

JPS57207384A - Phototransistor - Google Patents

Phototransistor

Info

Publication number
JPS57207384A
JPS57207384A JP56092859A JP9285981A JPS57207384A JP S57207384 A JPS57207384 A JP S57207384A JP 56092859 A JP56092859 A JP 56092859A JP 9285981 A JP9285981 A JP 9285981A JP S57207384 A JPS57207384 A JP S57207384A
Authority
JP
Japan
Prior art keywords
region
pad
type
emitter
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56092859A
Other languages
Japanese (ja)
Other versions
JPS6244824B2 (en
Inventor
Yoshihiko Mizushima
Yoshihito Amamiya
Shigeaki Yamashita
Osamu Asano
Yoshikazu Yama
Motoaki Takaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56092859A priority Critical patent/JPS57207384A/en
Publication of JPS57207384A publication Critical patent/JPS57207384A/en
Publication of JPS6244824B2 publication Critical patent/JPS6244824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain the phototransistor capable of responding at high speed by concavely hollowing out one end of a base region flatly and forming an emitter electrode pad to the concave section when an emitter region is shaped into the base region and the pad connected to the emitter region is molded. CONSTITUTION:The phototransistor with planer type PIN structure is formed in such a manner that an n<-> type layer 2 is grown onto an n<+> type semiconductor substrate 1 as a collector in epitaxial shape, the p type base region 3 is diffused and formed into the layer 2 and the n<+> type emitter region 4 is further shaped into the region 3. The whole surface is coated with a transparent protective film 9, windows are bored while being made correspond to the regions 3, 4, and an electrode pad 10 is attached to the region 3 and Al wiring 8 to the region 4 through a contact hole 7. The wiring 8 is connected to the emitter electrode pad 6, but the pad 6 is positioned into the concave section 5 flatly shaped to the base region and shortens a distance between the region 4 and the pad 6 at that time. Accordingly, a predetermined depletion layer 12 is formed into the layer 2, and the speed of response is increased.
JP56092859A 1981-06-15 1981-06-15 Phototransistor Granted JPS57207384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56092859A JPS57207384A (en) 1981-06-15 1981-06-15 Phototransistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56092859A JPS57207384A (en) 1981-06-15 1981-06-15 Phototransistor

Publications (2)

Publication Number Publication Date
JPS57207384A true JPS57207384A (en) 1982-12-20
JPS6244824B2 JPS6244824B2 (en) 1987-09-22

Family

ID=14066150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56092859A Granted JPS57207384A (en) 1981-06-15 1981-06-15 Phototransistor

Country Status (1)

Country Link
JP (1) JPS57207384A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
US5309013A (en) * 1985-04-30 1994-05-03 Canon Kabushiki Kaisha Photoelectric conversion device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
US4791469A (en) * 1983-07-02 1988-12-13 Canon Kabushiki Kaisha Photoelectric converter
US5128735A (en) * 1983-07-02 1992-07-07 Canon Kabushiki Kaisha Photoelectric converter with phototransistor and refresh means
US5309013A (en) * 1985-04-30 1994-05-03 Canon Kabushiki Kaisha Photoelectric conversion device

Also Published As

Publication number Publication date
JPS6244824B2 (en) 1987-09-22

Similar Documents

Publication Publication Date Title
DE3580891D1 (en) SEMICONDUCTOR ARRANGEMENT WITH SEVERAL TRANSITIONS.
JPS54100273A (en) Memory circuit and variable resistance element
JPS57207384A (en) Phototransistor
JPS5636171A (en) Zener diode and manufacture thereof
JPS5382275A (en) Production of semiconductor device
JPS5591184A (en) Photodiode
JPS5571082A (en) Semiconductor luminous device
JPS57207380A (en) Zener diode
JPS5533075A (en) Mesa semiconductor device
JPS57207383A (en) Phototransistor
JPS55165685A (en) Microwave diode
JPS538574A (en) Lateral thyristor
JPS55115357A (en) Semiconductor device
JPS5658258A (en) Semiconductor integrated circuit
JPS57104241A (en) Semiconductor device
JPS5776860A (en) Semiconductor device and its manufacture
JPS57124471A (en) Transistor
JPS57211774A (en) Lateral type transistor
JPS57139971A (en) Semiconductor device with high withstand voltage
JPS57143859A (en) Semiconductor device
JPS54110792A (en) Avalanche photo diode
JPS5526669A (en) Manufacturing semiconductor device
JPS55125678A (en) Zener diode
JPS56140631A (en) Manufacture of semiconductor device
JPS6432686A (en) Manufacture of avalanche type semiconductor photodetector