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JPS538574A - Lateral thyristor - Google Patents

Lateral thyristor

Info

Publication number
JPS538574A
JPS538574A JP8322076A JP8322076A JPS538574A JP S538574 A JPS538574 A JP S538574A JP 8322076 A JP8322076 A JP 8322076A JP 8322076 A JP8322076 A JP 8322076A JP S538574 A JPS538574 A JP S538574A
Authority
JP
Japan
Prior art keywords
lateral thyristor
emitter
lowering
substrate
prevent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8322076A
Other languages
Japanese (ja)
Inventor
Hiroyasu Hagino
Yoshiaki Hisamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8322076A priority Critical patent/JPS538574A/en
Publication of JPS538574A publication Critical patent/JPS538574A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To prevent the lowering of the carrier shifting performance and thus to obtain a high gate sensitivity by providing a impurity region of high relative resistance near the main surface within the substrate between the emitter and base with a flow of the main current.
JP8322076A 1976-07-12 1976-07-12 Lateral thyristor Pending JPS538574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8322076A JPS538574A (en) 1976-07-12 1976-07-12 Lateral thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8322076A JPS538574A (en) 1976-07-12 1976-07-12 Lateral thyristor

Publications (1)

Publication Number Publication Date
JPS538574A true JPS538574A (en) 1978-01-26

Family

ID=13796220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8322076A Pending JPS538574A (en) 1976-07-12 1976-07-12 Lateral thyristor

Country Status (1)

Country Link
JP (1) JPS538574A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11084626B2 (en) 2015-02-27 2021-08-10 Graphie Packaging International, LLC Method of forming a container
US11472592B2 (en) 2006-03-10 2022-10-18 Graphic Packaging International, Llc Injection-molded composite construct

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11472592B2 (en) 2006-03-10 2022-10-18 Graphic Packaging International, Llc Injection-molded composite construct
US11084626B2 (en) 2015-02-27 2021-08-10 Graphie Packaging International, LLC Method of forming a container

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