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JPS57197838A - Semiconductor flip chip element - Google Patents

Semiconductor flip chip element

Info

Publication number
JPS57197838A
JPS57197838A JP56080885A JP8088581A JPS57197838A JP S57197838 A JPS57197838 A JP S57197838A JP 56080885 A JP56080885 A JP 56080885A JP 8088581 A JP8088581 A JP 8088581A JP S57197838 A JPS57197838 A JP S57197838A
Authority
JP
Japan
Prior art keywords
melting point
point metal
bump electrode
solder
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56080885A
Other languages
Japanese (ja)
Inventor
Yasuo Ono
Norio Totsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56080885A priority Critical patent/JPS57197838A/en
Publication of JPS57197838A publication Critical patent/JPS57197838A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent the outflow of solder at the thermo compression bonding of a bump electrode, by filling the concave part formed on the surface of high melting point metal with a semiconductor flip chip element bump electrode with low melting point metal serving as solder. CONSTITUTION:After a surface protecting film 4 is adhered on an Al wiring 3 connected to an Si substrate 1 by an Si oxide film 2 window 2a on the Si substrate 1, a window 4a is provided on this surface protecting film 4 to form a bump electrode on this window part. The bump electrode forms a base metallic layer 5 constituted of three layers of Ti-Cu-Ni or Cr-Cu-Ni, etc. with a high melting point metal 9 of Au, etc. by electroplating with a photoresist as a mask thereon. Thereat, an electrodeposition condition is controlled to raise the fringe thereof 9a in abnormal growth next for the electrodeposition of low melting point metal 10 of Sn, etc. serving as solder within the fringe 9a.
JP56080885A 1981-05-29 1981-05-29 Semiconductor flip chip element Pending JPS57197838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56080885A JPS57197838A (en) 1981-05-29 1981-05-29 Semiconductor flip chip element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56080885A JPS57197838A (en) 1981-05-29 1981-05-29 Semiconductor flip chip element

Publications (1)

Publication Number Publication Date
JPS57197838A true JPS57197838A (en) 1982-12-04

Family

ID=13730792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56080885A Pending JPS57197838A (en) 1981-05-29 1981-05-29 Semiconductor flip chip element

Country Status (1)

Country Link
JP (1) JPS57197838A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4950623A (en) * 1988-08-02 1990-08-21 Microelectronics Center Of North Carolina Method of building solder bumps
US5108950A (en) * 1987-11-18 1992-04-28 Casio Computer Co., Ltd. Method for forming a bump electrode for a semiconductor device
US5289631A (en) * 1992-03-04 1994-03-01 Mcnc Method for testing, burn-in, and/or programming of integrated circuit chips
US5767010A (en) * 1995-03-20 1998-06-16 Mcnc Solder bump fabrication methods and structure including a titanium barrier layer
US5793116A (en) * 1996-05-29 1998-08-11 Mcnc Microelectronic packaging using arched solder columns
US5892179A (en) * 1995-04-05 1999-04-06 Mcnc Solder bumps and structures for integrated redistribution routing conductors
US5990472A (en) * 1997-09-29 1999-11-23 Mcnc Microelectronic radiation detectors for detecting and emitting radiation signals
US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
US6960828B2 (en) 2002-06-25 2005-11-01 Unitive International Limited Electronic structures including conductive shunt layers
US7049216B2 (en) 2003-10-14 2006-05-23 Unitive International Limited Methods of providing solder structures for out plane connections
US7081404B2 (en) 2003-02-18 2006-07-25 Unitive Electronics Inc. Methods of selectively bumping integrated circuit substrates and related structures
US7156284B2 (en) 2000-12-15 2007-01-02 Unitive International Limited Low temperature methods of bonding components and related structures
US7213740B2 (en) 2000-11-10 2007-05-08 Unitive International Limited Optical structures including liquid bumps and related methods
US7358174B2 (en) 2004-04-13 2008-04-15 Amkor Technology, Inc. Methods of forming solder bumps on exposed metal pads
US7495326B2 (en) 2002-10-22 2009-02-24 Unitive International Limited Stacked electronic structures including offset substrates
US7531898B2 (en) 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US7547623B2 (en) 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
US8674494B2 (en) 2011-08-31 2014-03-18 Samsung Electronics Co., Ltd. Semiconductor package having supporting plate and method of forming the same

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108950A (en) * 1987-11-18 1992-04-28 Casio Computer Co., Ltd. Method for forming a bump electrode for a semiconductor device
US4950623A (en) * 1988-08-02 1990-08-21 Microelectronics Center Of North Carolina Method of building solder bumps
US5289631A (en) * 1992-03-04 1994-03-01 Mcnc Method for testing, burn-in, and/or programming of integrated circuit chips
US5374893A (en) * 1992-03-04 1994-12-20 Mcnc Apparatus for testing, burn-in, and/or programming of integrated circuit chips, and for placing solder bumps thereon
US5381946A (en) * 1992-03-04 1995-01-17 Mcnc Method of forming differing volume solder bumps
US5767010A (en) * 1995-03-20 1998-06-16 Mcnc Solder bump fabrication methods and structure including a titanium barrier layer
US6222279B1 (en) 1995-03-20 2001-04-24 Mcnc Solder bump fabrication methods and structures including a titanium barrier layer
US6392163B1 (en) 1995-04-04 2002-05-21 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps
US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
US6389691B1 (en) 1995-04-05 2002-05-21 Unitive International Limited Methods for forming integrated redistribution routing conductors and solder bumps
US5892179A (en) * 1995-04-05 1999-04-06 Mcnc Solder bumps and structures for integrated redistribution routing conductors
US6329608B1 (en) 1995-04-05 2001-12-11 Unitive International Limited Key-shaped solder bumps and under bump metallurgy
US5793116A (en) * 1996-05-29 1998-08-11 Mcnc Microelectronic packaging using arched solder columns
US5990472A (en) * 1997-09-29 1999-11-23 Mcnc Microelectronic radiation detectors for detecting and emitting radiation signals
US7213740B2 (en) 2000-11-10 2007-05-08 Unitive International Limited Optical structures including liquid bumps and related methods
US7156284B2 (en) 2000-12-15 2007-01-02 Unitive International Limited Low temperature methods of bonding components and related structures
US7531898B2 (en) 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US7297631B2 (en) 2002-06-25 2007-11-20 Unitive International Limited Methods of forming electronic structures including conductive shunt layers and related structures
US6960828B2 (en) 2002-06-25 2005-11-01 Unitive International Limited Electronic structures including conductive shunt layers
US7547623B2 (en) 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
US7495326B2 (en) 2002-10-22 2009-02-24 Unitive International Limited Stacked electronic structures including offset substrates
US7081404B2 (en) 2003-02-18 2006-07-25 Unitive Electronics Inc. Methods of selectively bumping integrated circuit substrates and related structures
US7579694B2 (en) 2003-02-18 2009-08-25 Unitive International Limited Electronic devices including offset conductive bumps
US7049216B2 (en) 2003-10-14 2006-05-23 Unitive International Limited Methods of providing solder structures for out plane connections
US7358174B2 (en) 2004-04-13 2008-04-15 Amkor Technology, Inc. Methods of forming solder bumps on exposed metal pads
US8674494B2 (en) 2011-08-31 2014-03-18 Samsung Electronics Co., Ltd. Semiconductor package having supporting plate and method of forming the same
US9412720B2 (en) 2011-08-31 2016-08-09 Samsung Electronics Co., Ltd. Semiconductor package having supporting plate and method of forming the same

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