JPS57190353A - Manufacture of solid-state image pick-up device - Google Patents
Manufacture of solid-state image pick-up deviceInfo
- Publication number
- JPS57190353A JPS57190353A JP56076192A JP7619281A JPS57190353A JP S57190353 A JPS57190353 A JP S57190353A JP 56076192 A JP56076192 A JP 56076192A JP 7619281 A JP7619281 A JP 7619281A JP S57190353 A JPS57190353 A JP S57190353A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gates
- equalized
- electrodes
- electric charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56076192A JPS57190353A (en) | 1981-05-19 | 1981-05-19 | Manufacture of solid-state image pick-up device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56076192A JPS57190353A (en) | 1981-05-19 | 1981-05-19 | Manufacture of solid-state image pick-up device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57190353A true JPS57190353A (en) | 1982-11-22 |
JPH0522395B2 JPH0522395B2 (ja) | 1993-03-29 |
Family
ID=13598266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56076192A Granted JPS57190353A (en) | 1981-05-19 | 1981-05-19 | Manufacture of solid-state image pick-up device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57190353A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2578683A1 (fr) * | 1985-03-08 | 1986-09-12 | Thomson Csf | Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede |
JPH04322760A (ja) * | 1991-04-22 | 1992-11-12 | Koito Mfg Co Ltd | 塗装用治具 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558581A (en) * | 1978-10-26 | 1980-05-01 | Fujitsu Ltd | Infrared rays detector |
JPS5646571A (en) * | 1979-09-26 | 1981-04-27 | Sony Corp | Manufacture of solid image pickup element |
-
1981
- 1981-05-19 JP JP56076192A patent/JPS57190353A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558581A (en) * | 1978-10-26 | 1980-05-01 | Fujitsu Ltd | Infrared rays detector |
JPS5646571A (en) * | 1979-09-26 | 1981-04-27 | Sony Corp | Manufacture of solid image pickup element |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2578683A1 (fr) * | 1985-03-08 | 1986-09-12 | Thomson Csf | Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede |
US4710234A (en) * | 1985-03-08 | 1987-12-01 | Thomson--CSF | Process for manufacturing an anti-blooming diode associated with a surface canal |
JPH04322760A (ja) * | 1991-04-22 | 1992-11-12 | Koito Mfg Co Ltd | 塗装用治具 |
Also Published As
Publication number | Publication date |
---|---|
JPH0522395B2 (ja) | 1993-03-29 |
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