JPS5558581A - Infrared rays detector - Google Patents
Infrared rays detectorInfo
- Publication number
- JPS5558581A JPS5558581A JP13282578A JP13282578A JPS5558581A JP S5558581 A JPS5558581 A JP S5558581A JP 13282578 A JP13282578 A JP 13282578A JP 13282578 A JP13282578 A JP 13282578A JP S5558581 A JPS5558581 A JP S5558581A
- Authority
- JP
- Japan
- Prior art keywords
- charges
- gate
- infrared rays
- charge
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/157—CCD or CID infrared image sensors
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To effect the improvement in integration degree of a storage portion by providing a drain area with a reset gate electrode in a ring form which is common to each charge storage area adjacent to two infrared rays detector. CONSTITUTION:A signal charge obtained through photo-electric-conversion by an infrared detector is sent to an input diode 32 difined by a channel stop 36. Then an input gate 39 is opened by applying the voltage, and the charge is stored in a potential well under a storage gate 41. Signal charges 51A and 51B, which originate mainly in background raidation after the desired charges are removed away, are input from diodes 33, 32 respectively under the storage gate 41 divided into two by the channel stop 36 and a reset gate area 37. Next, the reset gate 37 is opened by applying the voltage and the charges are removed away to a common drain layer 38. In such a way, the provision of the drain layer, to which the charges originating in background radiation can be removed away commonly, enables to effect the improvement in integration degree of the charge storage portion of the infrared rays detector and to obtain the high speed signal processing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53132825A JPS6043031B2 (en) | 1978-10-26 | 1978-10-26 | infrared detection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53132825A JPS6043031B2 (en) | 1978-10-26 | 1978-10-26 | infrared detection device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5558581A true JPS5558581A (en) | 1980-05-01 |
JPS6043031B2 JPS6043031B2 (en) | 1985-09-26 |
Family
ID=15090423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53132825A Expired JPS6043031B2 (en) | 1978-10-26 | 1978-10-26 | infrared detection device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6043031B2 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5793568A (en) * | 1980-12-02 | 1982-06-10 | Nec Corp | Semiconductor image pickup element |
JPS57190353A (en) * | 1981-05-19 | 1982-11-22 | Fujitsu Ltd | Manufacture of solid-state image pick-up device |
JPS5874049A (en) * | 1981-10-29 | 1983-05-04 | Fujitsu Ltd | Multiplexer |
JPS5896467A (en) * | 1981-12-03 | 1983-06-08 | Nec Corp | Driving method of solid-state imaging device |
JPS58123280A (en) * | 1982-01-19 | 1983-07-22 | Nec Corp | Driving method for solid-state image pickup device |
JPS59123372A (en) * | 1982-12-29 | 1984-07-17 | Fujitsu Ltd | solid state imaging device |
JPS60225465A (en) * | 1984-04-23 | 1985-11-09 | Nec Corp | Solid-state image pickup element |
US5164838A (en) * | 1990-04-18 | 1992-11-17 | Pioneer Electronic Corporation | Time base error signal generating apparatus |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128235A (en) * | 1985-11-28 | 1987-06-10 | Nec Corp | Transmission terminal equipment |
-
1978
- 1978-10-26 JP JP53132825A patent/JPS6043031B2/en not_active Expired
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5793568A (en) * | 1980-12-02 | 1982-06-10 | Nec Corp | Semiconductor image pickup element |
JPS6320385B2 (en) * | 1980-12-02 | 1988-04-27 | Nippon Electric Co | |
JPS57190353A (en) * | 1981-05-19 | 1982-11-22 | Fujitsu Ltd | Manufacture of solid-state image pick-up device |
JPH0522395B2 (en) * | 1981-05-19 | 1993-03-29 | Fujitsu Ltd | |
JPS5874049A (en) * | 1981-10-29 | 1983-05-04 | Fujitsu Ltd | Multiplexer |
JPH0126550B2 (en) * | 1981-10-29 | 1989-05-24 | Fujitsu Ltd | |
JPS5896467A (en) * | 1981-12-03 | 1983-06-08 | Nec Corp | Driving method of solid-state imaging device |
JPS58123280A (en) * | 1982-01-19 | 1983-07-22 | Nec Corp | Driving method for solid-state image pickup device |
JPS59123372A (en) * | 1982-12-29 | 1984-07-17 | Fujitsu Ltd | solid state imaging device |
JPH0244187B2 (en) * | 1982-12-29 | 1990-10-03 | Fujitsu Ltd | |
JPS60225465A (en) * | 1984-04-23 | 1985-11-09 | Nec Corp | Solid-state image pickup element |
US5164838A (en) * | 1990-04-18 | 1992-11-17 | Pioneer Electronic Corporation | Time base error signal generating apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS6043031B2 (en) | 1985-09-26 |
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