[go: up one dir, main page]

JPS5558581A - Infrared rays detector - Google Patents

Infrared rays detector

Info

Publication number
JPS5558581A
JPS5558581A JP13282578A JP13282578A JPS5558581A JP S5558581 A JPS5558581 A JP S5558581A JP 13282578 A JP13282578 A JP 13282578A JP 13282578 A JP13282578 A JP 13282578A JP S5558581 A JPS5558581 A JP S5558581A
Authority
JP
Japan
Prior art keywords
charges
gate
infrared rays
charge
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13282578A
Other languages
Japanese (ja)
Other versions
JPS6043031B2 (en
Inventor
Hiroshi Takigawa
Shoji Doi
Soichi Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53132825A priority Critical patent/JPS6043031B2/en
Publication of JPS5558581A publication Critical patent/JPS5558581A/en
Publication of JPS6043031B2 publication Critical patent/JPS6043031B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/157CCD or CID infrared image sensors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To effect the improvement in integration degree of a storage portion by providing a drain area with a reset gate electrode in a ring form which is common to each charge storage area adjacent to two infrared rays detector. CONSTITUTION:A signal charge obtained through photo-electric-conversion by an infrared detector is sent to an input diode 32 difined by a channel stop 36. Then an input gate 39 is opened by applying the voltage, and the charge is stored in a potential well under a storage gate 41. Signal charges 51A and 51B, which originate mainly in background raidation after the desired charges are removed away, are input from diodes 33, 32 respectively under the storage gate 41 divided into two by the channel stop 36 and a reset gate area 37. Next, the reset gate 37 is opened by applying the voltage and the charges are removed away to a common drain layer 38. In such a way, the provision of the drain layer, to which the charges originating in background radiation can be removed away commonly, enables to effect the improvement in integration degree of the charge storage portion of the infrared rays detector and to obtain the high speed signal processing.
JP53132825A 1978-10-26 1978-10-26 infrared detection device Expired JPS6043031B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53132825A JPS6043031B2 (en) 1978-10-26 1978-10-26 infrared detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53132825A JPS6043031B2 (en) 1978-10-26 1978-10-26 infrared detection device

Publications (2)

Publication Number Publication Date
JPS5558581A true JPS5558581A (en) 1980-05-01
JPS6043031B2 JPS6043031B2 (en) 1985-09-26

Family

ID=15090423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53132825A Expired JPS6043031B2 (en) 1978-10-26 1978-10-26 infrared detection device

Country Status (1)

Country Link
JP (1) JPS6043031B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793568A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor image pickup element
JPS57190353A (en) * 1981-05-19 1982-11-22 Fujitsu Ltd Manufacture of solid-state image pick-up device
JPS5874049A (en) * 1981-10-29 1983-05-04 Fujitsu Ltd Multiplexer
JPS5896467A (en) * 1981-12-03 1983-06-08 Nec Corp Driving method of solid-state imaging device
JPS58123280A (en) * 1982-01-19 1983-07-22 Nec Corp Driving method for solid-state image pickup device
JPS59123372A (en) * 1982-12-29 1984-07-17 Fujitsu Ltd solid state imaging device
JPS60225465A (en) * 1984-04-23 1985-11-09 Nec Corp Solid-state image pickup element
US5164838A (en) * 1990-04-18 1992-11-17 Pioneer Electronic Corporation Time base error signal generating apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128235A (en) * 1985-11-28 1987-06-10 Nec Corp Transmission terminal equipment

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793568A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor image pickup element
JPS6320385B2 (en) * 1980-12-02 1988-04-27 Nippon Electric Co
JPS57190353A (en) * 1981-05-19 1982-11-22 Fujitsu Ltd Manufacture of solid-state image pick-up device
JPH0522395B2 (en) * 1981-05-19 1993-03-29 Fujitsu Ltd
JPS5874049A (en) * 1981-10-29 1983-05-04 Fujitsu Ltd Multiplexer
JPH0126550B2 (en) * 1981-10-29 1989-05-24 Fujitsu Ltd
JPS5896467A (en) * 1981-12-03 1983-06-08 Nec Corp Driving method of solid-state imaging device
JPS58123280A (en) * 1982-01-19 1983-07-22 Nec Corp Driving method for solid-state image pickup device
JPS59123372A (en) * 1982-12-29 1984-07-17 Fujitsu Ltd solid state imaging device
JPH0244187B2 (en) * 1982-12-29 1990-10-03 Fujitsu Ltd
JPS60225465A (en) * 1984-04-23 1985-11-09 Nec Corp Solid-state image pickup element
US5164838A (en) * 1990-04-18 1992-11-17 Pioneer Electronic Corporation Time base error signal generating apparatus

Also Published As

Publication number Publication date
JPS6043031B2 (en) 1985-09-26

Similar Documents

Publication Publication Date Title
IL29683A (en) Drilling apparatus and method
JPS5558581A (en) Infrared rays detector
FR1510329A (en) Process for separating asphalt into its constituents
JPS5230389A (en) Thyristor
JPS56100577A (en) Solid image pickup device
JPS5525218A (en) Solid state pickup device
FR1511392A (en) Estrane series steroid compounds and their manufacturing process
JPS645060A (en) Photoelectric converting device
GB968189A (en) Arrangement for determining radiation
JPS57109475A (en) Solid image pickup element
JPS5484982A (en) Input part of charge transfer element
FR1532548A (en) Energy conversion method and device
JPS5789249A (en) Infrared ray image sensor
JPS5732177A (en) Photoelectric conversion characteristic control system of solid state image pickup device
FR1518510A (en) Process for the production of d-ribulose and d-xylulose by fermentation
DURGAPRASAD et al. Composition of the September 2, 1966 solar particle event(Solar flare charged particle composition analysis with nuclear emulsion detectors in Nike-Apache sounding rockets)
FR1534399A (en) Method of coating photosensitive materials
OA02841A (en) New antiobotics and their preparation process.
JPS52120785A (en) Light detection semiconductor device
CA773102A (en) Process of producing d-ribose-5-phosphate and d-ribose through fermentation
JPS54127620A (en) Solid state pickup device
CA773160A (en) Pigmented polyethylene composition and process therefor
CA753230A (en) Method for the fermentative production of 5-fluorouracil ribotide
CA752759A (en) Method for improving the dyeability of shaped structures made of polyolefins
CA760146A (en) Prefabricated structural section and method of making same