JPS54127620A - Solid state pickup device - Google Patents
Solid state pickup deviceInfo
- Publication number
- JPS54127620A JPS54127620A JP3563278A JP3563278A JPS54127620A JP S54127620 A JPS54127620 A JP S54127620A JP 3563278 A JP3563278 A JP 3563278A JP 3563278 A JP3563278 A JP 3563278A JP S54127620 A JPS54127620 A JP S54127620A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- solid state
- pickup device
- incident rays
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 abstract 1
- 238000005192 partition Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Abstract
PURPOSE: To obtain a solid state pickup device applying the frame transfer system which prevents the deterioration of the short wave length sensitivity caused by absorption and reflection of the incident rays, by providing the electrode lacking part between the transfer electrodes.
CONSTITUTION: Transfer gate electrodes 19∼23 partition the picture elements of the vertical direction, and electrode lacking part 25 is provided at the position where channel stopper 5 passes through. These electrodes are formed with the poly- crystal silicon. The incident rays at the light receiving region featuring the structure shown in the diagram is composed with the light absorbed and reflected partially through the transfer electrode and the light entering part 25 with no absorption nor reflection and then put into semiconductor substrate 13. As a result, the spectral sensitivity can be improved for the short wave length region more than the conventional solid state pickup device with which all incident rays have to pass through the poly-crystal silicon electrode.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3563278A JPS54127620A (en) | 1978-03-27 | 1978-03-27 | Solid state pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3563278A JPS54127620A (en) | 1978-03-27 | 1978-03-27 | Solid state pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54127620A true JPS54127620A (en) | 1979-10-03 |
Family
ID=12447234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3563278A Pending JPS54127620A (en) | 1978-03-27 | 1978-03-27 | Solid state pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54127620A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5135296A (en) * | 1974-09-20 | 1976-03-25 | Nippon Electric Co | |
| JPS5239311A (en) * | 1975-09-25 | 1977-03-26 | Sony Corp | Solid state pickup device |
-
1978
- 1978-03-27 JP JP3563278A patent/JPS54127620A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5135296A (en) * | 1974-09-20 | 1976-03-25 | Nippon Electric Co | |
| JPS5239311A (en) * | 1975-09-25 | 1977-03-26 | Sony Corp | Solid state pickup device |
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