JPS57174449A - Production of photoconductive member - Google Patents
Production of photoconductive memberInfo
- Publication number
- JPS57174449A JPS57174449A JP56060154A JP6015481A JPS57174449A JP S57174449 A JPS57174449 A JP S57174449A JP 56060154 A JP56060154 A JP 56060154A JP 6015481 A JP6015481 A JP 6015481A JP S57174449 A JPS57174449 A JP S57174449A
- Authority
- JP
- Japan
- Prior art keywords
- compds
- formula
- carbon atoms
- raw material
- kinds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To form an extremely good photoconductive layer easily on a substrate by mixing >=2 kinds of silicon compds. of the specific formula at specific ratios and mixing these with materials contg. carbon atoms, thereby constituting a raw material for formation of photoconductive layers. CONSTITUTION:A raw material for formation of photoconductive layers is constituted of a material consisting of carbon atoms as constituting atoms, and at least 2 kinds of the compds. expressed by the formula SimHlXk (m, k are positive integers, l is 0 or a positive integer, l+k-2m+2, X is halogen atom). The compds. of the formula are such that with respect to the compds. of the lowest order of (m), for example, SiF4, SiCl4, the compds. of (m) of higher order than this, for example, Si2F6, Si2Cl6 are mixed at >=1vol%, more preferably >=5vol%. There are, for example, methane, ethylene, acetylene, etc. as the material contg. carbon atoms, and these are mixed at about <=15vol% based on the vol. of the compds. of the formula. Such raw material is introduced in a gaseous state into a deposition chamber, the pressure wherein is kept decreased, whereby electric discharge is caused, and a photoconductive layer is formed over a wide area on a substrate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56060154A JPS57174449A (en) | 1981-04-21 | 1981-04-21 | Production of photoconductive member |
| US06/354,898 US4468443A (en) | 1981-03-12 | 1982-03-04 | Process for producing photoconductive member from gaseous silicon compounds |
| DE19823209055 DE3209055A1 (en) | 1981-03-12 | 1982-03-12 | METHOD FOR PRODUCING A PHOTO-CONDUCTIVE ELEMENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56060154A JPS57174449A (en) | 1981-04-21 | 1981-04-21 | Production of photoconductive member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57174449A true JPS57174449A (en) | 1982-10-27 |
| JPS6331553B2 JPS6331553B2 (en) | 1988-06-24 |
Family
ID=13133944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56060154A Granted JPS57174449A (en) | 1981-03-12 | 1981-04-21 | Production of photoconductive member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57174449A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068050A (en) * | 1983-08-19 | 1985-04-18 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Deposition method using new composition by selective light excitation |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7398966B2 (en) | 2020-01-10 | 2023-12-15 | 信越化学工業株式会社 | Group III nitride substrate manufacturing method and Group III nitride substrate |
-
1981
- 1981-04-21 JP JP56060154A patent/JPS57174449A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068050A (en) * | 1983-08-19 | 1985-04-18 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Deposition method using new composition by selective light excitation |
| JPH06339627A (en) * | 1983-08-19 | 1994-12-13 | Energy Conversion Devices Inc | Method for depositing semiconductor material on substrate and for producing thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6331553B2 (en) | 1988-06-24 |
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